Search

Your search keyword '"Jean-Philippe, Attané"' showing total 91 results
Start Over Author "Jean-Philippe, Attané"
91 results on '"Jean-Philippe, Attané"'

1. Non-volatile electric control of spin-orbit torques in an oxide two-dimensional electron gas

Author

Cécile Grezes, Aurélie Kandazoglou, Maxen Cosset-Cheneau, Luis M. Vicente Arche, Paul Noël, Paolo Sgarro, Stephane Auffret, Kevin Garello, Manuel Bibes, Laurent Vila, and Jean-Philippe Attané

Subjects
Science
Abstract

Abstract Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that two-dimensional electron gases (2DEGs) appearing at oxide interfaces provide a highly efficient spin-to-charge current interconversion. The ability to manipulate 2DEGs using gate voltages could offer a degree of freedom lacking in the classical ferromagnetic/spin Hall effect bilayers for spin-orbitronics, in which the sign and amplitude of SOTs at a given current are fixed by the stack structure. Here, we report the non-volatile electric-field control of SOTs in an oxide-based Rashba-Edelstein 2DEG. We demonstrate that the 2DEG is controlled using a back-gate electric-field, providing two remanent and switchable states, with a large resistance contrast of 1064%. The SOTs can then be controlled electrically in a non-volatile way, both in amplitude and in sign. This achievement in a 2DEG-CoFeB/MgO heterostructures with large perpendicular magnetization further validates the compatibility of oxide 2DEGs for magnetic tunnel junction integration, paving the way to the advent of electrically reconfigurable SOT MRAMS circuits, SOT oscillators, skyrmion and domain-wall-based devices, and magnonic circuits.

Published
2023
Full Text
View/download PDF

2. Magnetic properties of perpendicularly magnetized [Au/Co/Pd]n thin films and nanostructures with Dzyaloshinskii-Moriya interaction

Author

Chloé Bouard, Patrick Warin, Alain Marty, Laurent Vila, Van Tuong Pham, and Jean-Philippe Attané

Subjects
Physics, QC1-999
Abstract

Magnetic force microscopy imaging enable to extract the main magnetic parameters (saturation magnetization, anisotropy, domain size, exchange constant). The magnetoresistance and the extraordinary Hall effect of the material have been characterized using nanostructures patterned on the multilayer. Both the magnetization reversal mode and the magnetotransport properties are found to depend strongly on the nanowire width. The relatively low coercive field, the high anisotropy, and the possibility to control domain wall motion in sub-100 nm wires make this system an interesting alternative to Pt-based multilayers for spin-transfer torques experiments.

Published
2018
Full Text
View/download PDF

3. Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluride

Author

Edoardo Albisetti, Manuel Bibes, Riccardo Bertacco, Federico Fagiani, Luca Nessi, Silvia Picozzi, Stefano Cecchi, Marcio Costa, Matteo Cantoni, Jagoda Sławińska, Alessandro Novati, Christian Rinaldi, Sara Varotto, Daniela Petti, R. Calarco, Marco Buongiorno Nardelli, Paul Noël, Jean Philippe Attané, Laurent Vila, Simone Petrò, Theory of Condensed Matter, Varotto, S, Nessi, L, Cecchi, S, Slawinska, J, Noel, P, Petro, S, Fagiani, F, Novati, A, Cantoni, M, Petti, D, Albisetti, E, Costa, M, Calarco, R, Buongiorno Nardelli, M, Bibes, M, Picozzi, S, Attane, J, Vila, L, Bertacco, R, and Rinaldi, C

Subjects
Materials science, 02 engineering and technology, 01 natural sciences, Condensed Matter::Materials Science, chemistry.chemical_compound, Spintronic, molecular beam epitaxy, Electric field, 0103 physical sciences, Electrical and Electronic Engineering, 010306 general physics, Polarization (electrochemistry), germanium telluride, Instrumentation, Germanium telluride, ferroelectric Rashba semiconductor, Spintronics, business.industry, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Ferroelectricity, Electronic, Optical and Magnetic Materials, Semiconductor, Ferromagnetism, chemistry, Spin Hall effect, Optoelectronics, 0210 nano-technology, business
Abstract

The development of spintronic devices has been limited by the poor compatibility between semiconductors and ferromagnetic sources of spin. The broken inversion symmetry of some semiconductors may allow for spin–charge interconversion, but its control by electric fields is volatile. This has led to interest in ferroelectric Rashba semiconductors, which combine semiconductivity, large spin–orbit coupling and non-volatility. Here we report room-temperature, non-volatile ferroelectric control of spin-to-charge conversion in epitaxial germanium telluride films. We show that ferroelectric switching by electrical gating is possible in germanium telluride, despite its high carrier density. We also show that spin-to-charge conversion has a similar magnitude to what is observed with platinum, but the charge current sign is controlled by the orientation of ferroelectric polarization. Comparison between theoretical and experimental data suggests that the inverse spin Hall effect plays a major role in switchable conversion. The ferroelectric polarization of epitaxial thin films of germanium telluride can be switched by electrical gating and used to control spin-to-charge conversion.

Published
2021
Full Text
View/download PDF

9. Ferrimagnetic–ferromagnetic phase transition in Mn 4 N films favored by non-magnetic In doping

Author

Takashi Suemasu, Komori Taro, Sambit Ghosh, Laurent Vila, Tomohiro Yasuda, Kenta Amemiya, Jean-Philippe Attané, Syuta Honda, Haruka Mitarai, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)

Subjects
Phase transition, Materials science, Acoustics and Ultrasonics, Non magnetic, Condensed matter physics, Ferromagnetism, Ferrimagnetism, Doping, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials
Abstract

The ferrimagnet Mn4N forms a family of compounds useful in spintronics. In a compound comprising non-magnetic and magnetic elements, one basically expects the compound to become ferromagnetic when the proportion of the magnetic element increases. Conversely, one does not expect ferromagnetism when the proportion of the non-magnetic element increases. Surprisingly, Mn4N becomes ferromagnetic at room temperature when the Mn content is decreased by the addition of In atoms, a non-magnetic element. X-ray magnetic circular dichroism measurement reveals that the magnetic moment of Mn atoms at face-centered sites, Mn(II), reverses between x= 0.15 and 0.27 and aligns parallel to that of Mn atoms at corner sites, Mn(I), at x = 0.27 and 0.41. The sign of the anomalous Hall resistivity also changes between x = 0.15 and 0.27 in accordance with the reversal of the magnetic moment of the Mn(II) atoms. These results can be interpreted using first-principles calculations, showing that the magnetic moment of Mn(II) sites which are the nearest neighbors to the In atom align to that of Mn(I) sites.

Published
2021
Full Text
View/download PDF

10. Spin–Charge Interconversion in KTaO 3 2D Electron Gases

Author

Suvam Bhattacharya, Raphaël Salazar, Julien E. Rault, Jean-Philippe Attané, Guilhem Saiz, Manuel Bibes, Dmitri E. Nikonov, Ian A. Young, Patrick Le Fèvre, Anke Sander, Sara Varotto, François Bertran, Lin Chia-Ching, Paul Noël, Diogo C. Vaz, Felix Trier, Maxen Cosset-Cheneau, Luis M. Vicente-Arche, Nicolas Bergeal, Srijani Mallik, Laurent Vila, Julien Bréhin, Agnès Barthélémy, Hai Li, Gerbold Menard, Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES [France]-Centre National de la Recherche Scientifique (CNRS), SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), ANR-16-CE24-0017,TOP-RISE,Isolant topologique et etats d'interfaces Rashba pour l'électronique de spin(2016), ANR-19-CE47-0006,QUANTOP,Structures quantiques d'oxydes pour les dispositifs topologiques(2019), and ANR-18-CE24-0015,CORNFLAKE,Contrôle ferroélectrique du couplage spin-orbite dans les dichalcogenides de métaux de transition(2018)

Subjects
Materials science, Magnetoresistance, Condensed matter physics, Photoemission spectroscopy, Mechanical Engineering, 02 engineering and technology, Electron, Electronic structure, Spin–orbit interaction, 021001 nanoscience & nanotechnology, 01 natural sciences, Magnetic field, T-symmetry, Mechanics of Materials, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Materials Science, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology, Perovskite (structure)
Abstract

International audience; Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO$_3$ (STO), albeit in separate studies focusing on one or the other. The demonstration of these effects remains mostly elusive in other oxide interface systems despite their blossoming in the last decade. Here, we report the observation of both the DEE and IEE in a new interfacial two-dimensional electron gas (2DEG) based on the perovskite oxide KTaO$_3$. We generate 2DEGs by the simple deposition of Al metal onto KTaO$_3$ single crystals, characterize them by angle-resolved photoemission spectroscopy and magnetotransport, and demonstrate the DEE through unidirectional magnetoresistance and the IEE by spin-pumping experiments. We compare the spin-charge interconversion efficiency with that of STO-based interfaces, relate it to the 2DEG electronic structure, and give perspectives for the implementation of KTaO$_3$ 2DEGs into spin-orbitronic devices.

Published
2021
Full Text
View/download PDF

11. Mapping spin–charge conversion to the band structure in a topological oxide two-dimensional electron gas

Author

Diogo C. Vaz, Manali Vivek, Luis M. Vicente-Arche, Marc Gabay, Laurent Vila, Sergio Valencia, Paul Noël, Siobhan McKeown-Walker, Agnès Barthélémy, Felix Trier, Manuel Bibes, Felix Baumberger, Jean-Philippe Attané, Börge Göbel, Anke Sander, Hanako Okuno, Pierre Bruneel, Albert Fert, Nicolas Bergeal, Ingrid Mertig, Gyanendra Singh, Annika Johansson, Flavio Y. Bruno, Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), Centre National de la Recherche Scientifique (CNRS)-THALES, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Martin-Luther-Universität Halle Wittenberg (MLU), Univ Geneva, DQMP, 24 Quai Ernest, CH-1211 Geneva 4, Switzerland, Helmholtz-Zentrum Berlin für Materialen & Energie, Laboratoire de Physique des Solides (LPS), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), Laboratoire de Physique et d'Etude des Matériaux (UMR 8213) (LPEM), Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris (ESPCI Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), THALES [France]-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), ANR-17-CE24-0026,OISO,SPINORBITRONIQUE A BASE D'OXYDES.(2017), ANR-16-CE24-0017,TOP-RISE,Isolant topologique et etats d'interfaces Rashba pour l'électronique de spin(2016), Unité Mixte de Physique CNRS-Thales (UMPhy CNRS-Thales), Thales Research & Techology-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Laboratoire de Physique et d'Etude des Matériaux (LPEM), ESPCI ParisTech-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA), Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
Materials science, Spintronics, Mechanical Engineering, ddc:500.2, 02 engineering and technology, General Chemistry, Electron, Electronic structure, 010402 general chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Topology, 01 natural sciences, 0104 chemical sciences, Mechanics of Materials, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Materials Science, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology, Electronic band structure, Fermi gas, Spin (physics), Topology (chemistry), Rashba effect
Abstract

While spintronics has traditionally relied on ferromagnetic metals as spin generators and detectors, spin–orbitronics exploits the efficient spin–charge interconversion enabled by spin–orbit coupling in non-magnetic systems. Although the Rashba picture of split parabolic bands is often used to interpret such experiments, it fails to explain the largest conversion effects and their relationship with the electronic structure. Here, we demonstrate a very large spin-to-charge conversion effect in an interface-engineered, high-carrier-density SrTiO3 two-dimensional electron gas and map its gate dependence on the band structure. We show that the conversion process is amplified by enhanced Rashba-like splitting due to orbital mixing and in the vicinity of avoided band crossings with topologically non-trivial order. Our results indicate that oxide two-dimensional electron gases are strong candidates for spin-based information readout in new memory and transistor designs. Our results also emphasize the promise of topology as a new ingredient to expand the scope of complex oxides for spintronics. A very large spin-to-charge conversion arising from a combination of the Rashba effect and topologically non-trivial states is realized at the interface of strontium titanate and aluminium, with implications for the role of topology in memory and transistor designs.

Published
2019
Full Text
View/download PDF

12. Anisotropic magnetoresistance in Mn4−xNixN and the change in the crystalline field

Author

Taro Komori, Haruka Mitarai, Tomohiro Yasuda, Sambit Ghosh, Laurent Vila, Jean-Philippe Attané, Syuta Honda, Takashi Suemasu, Graduate School of Pure and Applied Sciences, University of Tsukuba, Université de Tsukuba = University of Tsukuba, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)

Subjects
General Physics and Astronomy, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]
Abstract

We focus on rare-earth-free anti-perovskite Mn4− xNi xN epitaxial films, which can be used for ultrafast current-induced domain wall motion (CIDWM) in magnetic strips. The magneto-transport properties of these materials are very important for a deep understanding of CIDWM. In this study, we investigated the magneto-transport properties of Mn4− xNi xN epitaxial films grown on SrTiO3(001) and MgO(001) substrates through anisotropic magnetoresistance (AMR) measurements at temperatures between 2 and 300 K. In samples with a small Ni composition such as x = 0.05−0.1, the AMR ratio of Mn4− xNi xN drastically decreased with increasing temperature. We also analyzed the twofold and fourfold symmetries in the AMR curves. Fourfold symmetry is caused by tetragonal crystal fields and is unique to anti-perovskite 3 d-metal nitrides such as Mn4N and Fe4N. Only slight fourfold symmetry was observed in Mn4− xNi xN. We also performed first-principles calculations with the Vienna ab initio simulation package (VASP) to obtain the projected density of states (PDOS) of d orbitals in Mn4− xNi xN, which is responsible for the magnetism of these materials. We conclude that these results are due to the Ni atoms, which function as magnetic impurities and lead to a noticeable change in PDOS, as proved by VASP calculation.

Published
2022
Full Text
View/download PDF

13. Room-temperature ferroelectric control of spin-to-charge conversion in GeTe

Author

Silvia Picozzi, Jean-Philippe Attané, Stefano Cecchi, Raffaella Calarco, Christian Rinaldi, Sara Varotto, Marcio Costa, Riccardo Bertacco, Matteo Cantoni, Federico Fagiani, Manuel Bibes, Jagoda Sławińska, Paul Noël, Laurent Vila, Luca Nessi, and Marco Buongiorno Nardelli

Subjects
Materials science, Spintronics, business.industry, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Epitaxy, Ferroelectricity, Condensed Matter::Materials Science, Semiconductor, Ferromagnetism, Spin Hall effect, Optoelectronics, Condensed Matter::Strongly Correlated Electrons, business, Polarization (electrochemistry), Spin-½
Abstract

Since the 1980s, the generation and detection of spin currents has relied on ferromagnets. Their switching today relies on spin-orbit torque from heavy metals. Nevertheless, spin injection in semiconductors has rather low efficiency. Ferroelectric Rashba semiconductors (FERSC) [1,2] may constitute a new paradigm for semiconductor spintronics, thanks to the combination of semiconductivity, large spin-orbit interaction, and the non-volatility provided by ferroelectricity. Here we report the room-temperature ferroelectric switching of spin-to-charge conversion in epitaxial GeTe films. We first show that ferroelectricity in GeTe can be reversed by electrical gating despite its high carrier density. Then, we reveal a spin-to-charge conversion as effective as in Pt, but whose sign switches with the ferroelectric polarization. These results open a route towards devices combining spin-logic and memory integrated into a silicon-compatible material.

Published
2021
Full Text
View/download PDF

14. Spin Hall effect and spin absorption in ferromagnetic materials

Author

Ariel Brenac, Cecile Grezes, Alain Marty, Jean-François Jacquot, Van Tuong Pham, Xavier Waintal, Patrick Warin, Laurent Vila, Jean-Philippe Attané, Sara Varotto, Yu Fu, Daria Gusakova, Maxen Cosset-Cheneau, Vincent Baltz, Paul Noël, Henri Jaffrès, Serge Gambarelli, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES-Centre National de la Recherche Scientifique (CNRS), Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich] (ETH Zürich), SYstèmes Moléculaires et nanoMatériaux pour l’Energie et la Santé (SYMMES), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and THALES [France]-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Condensed matter physics, Spin valve, Conductance, 02 engineering and technology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 01 natural sciences, Condensed Matter::Materials Science, Paramagnetism, Magnetization, Ferromagnetism, 0103 physical sciences, Spin Hall effect, Condensed Matter::Strongly Correlated Electrons, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology, Absorption (electromagnetic radiation), ComputingMilieux_MISCELLANEOUS, Spin-½
Abstract

The link between magnetization and Spin Hall Effect (SHE) has remained mostly unclear for now. In a first part of this contribution, we study oh the presence of the magnetization affect the SHE, by performing in the weak ferromagnet NiCu Spin Pumping-FMR measurements across the ferromagnetic / paramagnetic critical temperature. We show that the high spin Hall effects which can be obtained in 3d ferromagnets seems to be independent of the magnetic phase. In a second part, we show that the spin absorption process in a ferromagnetic material depends on the spin orientation relative to the magnetization. Using a ferromagnet to absorb the pure spin current created within a lateral spin valve, we evidence and quantify a sizable orientation dependence of the spin absorption in Co, CoFe, and NiFe. These experiments allow us to determine the spin-mixing conductance, an elusive but fundamental parameter of the spin-dependent transport.

Published
2021
Full Text
View/download PDF

15. Spin-Charge Interconversion in KTaO

Author

Luis M, Vicente-Arche, Julien, Bréhin, Sara, Varotto, Maxen, Cosset-Cheneau, Srijani, Mallik, Raphaël, Salazar, Paul, Noël, Diogo C, Vaz, Felix, Trier, Suvam, Bhattacharya, Anke, Sander, Patrick, Le Fèvre, François, Bertran, Guilhem, Saiz, Gerbold, Ménard, Nicolas, Bergeal, Agnès, Barthélémy, Hai, Li, Chia-Ching, Lin, Dmitri E, Nikonov, Ian A, Young, Julien E, Rault, Laurent, Vila, Jean-Philippe, Attané, and Manuel, Bibes

Abstract

Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO

Published
2021

16. Current-Driven Domain Wall Dynamics in Ferrimagnetic Nickel-Doped Mn4N Films: Very Large Domain Wall Velocities and Reversal of Motion Direction across the Magnetic Compensation Point

Author

Toshiki Gushi, Sambit Ghosh, Takashi Suemasu, Ali Hallal, Hanako Okuno, Jose Peña Garcia, Jan Vogel, Stefania Pizzini, Jean-Philippe Attané, Taro Komori, Haruka Mitarai, Mairbek Chshiev, Taku Hirose, Laurent Vila, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Graduate School of Pure and Applied Sciences, University of Tsukuba, Université de Tsukuba = University of Tsukuba, Micro et NanoMagnétisme (NEEL - MNM), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Institut Universitaire de France (IUF), Ministère de l'Education nationale, de l’Enseignement supérieur et de la Recherche (M.E.N.E.S.R.), ANR-10-LABX-0051,LANEF,Laboratory of Alliances on Nanosciences - Energy for the Future(2010), European Project: 754303, and Micro et NanoMagnétisme (MNM)

Subjects
Angular momentum, FOS: Physical sciences, Bioengineering, 02 engineering and technology, Magnetization, Condensed Matter::Materials Science, Ferrimagnetism, Torque, General Materials Science, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS, Physics, Condensed Matter - Materials Science, Spintronics, Spin polarization, Condensed matter physics, Mechanical Engineering, Spin-transfer torque, Materials Science (cond-mat.mtrl-sci), General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Condensed Matter - Other Condensed Matter, Domain wall (magnetism), 0210 nano-technology, Other Condensed Matter (cond-mat.other)
Abstract

Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT driven DW motion in ferrimagnetic manganese nickel nitride (Mn4-xNixN) films, in which a fine adjustment of the Ni content allows setting the magnetic compensation at room temperature. The reduced magnetization, combined with the large spin polarization of conduction electrons, strongly enhances the STT so that domain wall velocities approaching 3000 m/s can be obtained for Ni compositions close to the compensation point. In addition, a reversal of the domain wall motion direction is observed when the magnetic compensation composition is crossed. This striking feature, related to the change of direction of the spin polarization with respect to that of the net magnetization, is clarified by ab initio band structure calculations., Comment: 24 pages, 4 figures

Published
2021
Full Text
View/download PDF

17. Current-Driven Domain Wall Dynamics in Ferrimagnetic Nickel-Doped Mn

Author

Sambit, Ghosh, Taro, Komori, Ali, Hallal, Jose, Peña Garcia, Toshiki, Gushi, Taku, Hirose, Haruka, Mitarai, Hanako, Okuno, Jan, Vogel, Mairbek, Chshiev, Jean-Philippe, Attané, Laurent, Vila, Takashi, Suemasu, and Stefania, Pizzini

Abstract

Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT-driven DW motion in ferrimagnetic manganese nickel nitride (Mn

Published
2021

18. Oxide spin-orbitronics: spin-charge interconversion and topological spin textures

Author

Jean-Philippe Attané, Laurent Vila, Manuel Bibes, Paul Noël, Felix Trier, Joo-Von Kim, Technical University of Denmark [Lyngby] (DTU), SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES-Centre National de la Recherche Scientifique (CNRS), ANR-10-LABX-0051,LANEF,Laboratory of Alliances on Nanosciences - Energy for the Future(2010), ANR-17-CE24-0026,OISO,SPINORBITRONIQUE A BASE D'OXYDES.(2017), Danmarks Tekniske Universitet = Technical University of Denmark (DTU), and THALES [France]-Centre National de la Recherche Scientifique (CNRS)

Subjects
Field (physics), Oxide, ferroelectricity, spintronics, spin Hall effect, Skyrmions, FOS: Physical sciences, 02 engineering and technology, Topology, 01 natural sciences, Biomaterials, Condensed Matter::Materials Science, chemistry.chemical_compound, 0103 physical sciences, Materials Chemistry, ddc:530, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, Topology (chemistry), Spin-½, Physics, Condensed Matter - Materials Science, Spintronics, Skyrmion, Materials Science (cond-mat.mtrl-sci), Charge (physics), 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Spin Hall effect, 0210 nano-technology, Energy (miscellaneous)
Abstract

Quantum oxide materials possess a vast range of properties stemming from the interplay between the lattice, charge, spin and orbital degrees of freedom, in which electron correlations often play an important role. Historically, the spin-orbit coupling was rarely a dominant energy scale in oxides. It however recently came to the forefront, unleashing various exotic phenomena connected with real and reciprocal-space topology that may be harnessed in spintronics. In this article, we review the recent advances in the new field of oxide spin-orbitronics with a special focus on spin-charge interconversion from the direct and inverse spin Hall and Edelstein effects, and on the generation and observation of topological spin textures such as skyrmions. We highlight the control of spin-orbit-driven effects by ferroelectricity and give perspectives for the field., Comment: Submitted to Nature Reviews Materials

Published
2021
Full Text
View/download PDF

19. Present Status of Rare-earth Free Ferrimagnet Mn 4 N and Future Prospects of Mn 4 N-based Compensated Ferrimagnets

Author

Laurent Vila, Jean-Philippe Attané, Takashi Suemasu, Université de Tsukuba = University of Tsukuba, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)

Subjects
Materials science, Spintronics, Spin polarization, Condensed matter physics, Magnetic circular dichroism, General Physics and Astronomy, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Magnetization, Magnetic anisotropy, Condensed Matter::Materials Science, Domain wall (magnetism), Ferrimagnetism, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 010306 general physics, 0210 nano-technology, Spontaneous magnetization
Abstract

International audience; The rare-earth-free ferrimagnet Mn4N has attractive features for spintronics applications, because it possesses a perpendicular magnetization, due to a relatively large magnetic anisotropy constant of ∼105 J m−3 and a small spontaneous magnetization of ∼100 kA m−1, and a large spin polarization (P = 0.8). More crucially, it is possible to reach the magnetic compensation at room temperature, by tuning its constituent elements in compounds such as Mn4−xNixN and Mn4−xCoxN. This is particularly interesting for spin-torque-based spintronics applications, because at the vicinity of the magnetization and/or angular momentum compensation points, the switching currents can be reduced significantly, thereby leading to lower switching energies and higher switching speed. In this review article, we emphasize the importance of epitaxial growth of Mn4N films by comparing the results obtained on two different substrates, MgO(001) and SrTiO3(001). We then present the achievement of ultrafast current-induced domain wall motion (CIDWM) in Mn4N microstrips, and study the magnetic compensations in Mn4−xNixN and Mn4−xCoxN at room temperature, proved by x-ray magnetic circular dichroism measurements. Finally, we offer future prospects for such Mn4N-based compensated

Published
2021
Full Text
View/download PDF

20. Metal/SrTiO3 two-dimensional electron gases for spin-to-charge conversion

Author

Diogo C. Vaz, Jean-Philippe Attané, Gosavi Tanay, Srijani Mallik, Luis M. Vicente-Arche, Ian A. Young, Agnès Barthélémy, Paul Noël, Felix Trier, Manuel Bibes, Anke Sander, Dmitri E. Nikonov, Maxen Cosset-Cheneau, Laurent Vila, Lin Chia-Ching, Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), Centre National de la Recherche Scientifique (CNRS)-THALES, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Intel Corporation [Hillsboro], Intel Corporation [USA], ANR-10-LABX-0051,LANEF,Laboratory of Alliances on Nanosciences - Energy for the Future(2010), ANR-16-CE24-0017,TOP-RISE,Isolant topologique et etats d'interfaces Rashba pour l'électronique de spin(2016), and THALES [France]-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Condensed Matter - Mesoscale and Nanoscale Physics, Physics and Astronomy (miscellaneous), Condensed matter physics, FOS: Physical sciences, Inverse, 02 engineering and technology, Electron, Sputter deposition, 021001 nanoscience & nanotechnology, Coupling (probability), Epitaxy, 01 natural sciences, 7. Clean energy, Ferromagnetic resonance, Condensed Matter::Materials Science, X-ray photoelectron spectroscopy, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, General Materials Science, Condensed Matter::Strongly Correlated Electrons, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology, Spin (physics)
Abstract

${\mathrm{SrTiO}}_{3}$-based two-dimensional electron gases (2DEGs) can be formed through the deposition of epitaxial oxides like ${\mathrm{LaAlO}}_{3}$ or of reactive metals such as Al. Such 2DEGs possess a finite Rashba spin-orbit coupling that has recently been harnessed to interconvert charge and spin currents through the direct and inverse Edelstein and spin Hall effects. Here we compare the formation and properties of 2DEGs generated in ${\mathrm{SrTiO}}_{3}$ by the growth of Al, Ta, and Y ultrathin films by magnetron sputtering. By combining in situ and ex situ x-ray photoelectron spectroscopy (XPS) we gain insight into the reduction of the ${\mathrm{SrTiO}}_{3}$ and the appearance of ${\mathrm{Ti}}^{3+}$ states associated with 2DEG formation, its reoxidation by exposure to the air, and the transformation of the metal into its binary oxides. We extract the carrier densities through magnetotransport and compare them with the XPS data. Finally, working with samples covered by an extra layer of NiFe, we perform spin-pumping ferromagnetic resonance experiments and investigate spin-charge conversion as a function of gate voltage. We identify trends in the data across the different sample systems and discuss them as a function of the carrier density and the transparency of the metal oxide tunnel barrier.

Published
2021
Full Text
View/download PDF

21. Magnetic compensation at two different composition ratios in rare-earth-free Mn4−xCoxN ferrimagnetic films

Author

Sambit Ghosh, Taku Hirose, Laurent Vila, Haruka Mitarai, Takashi Suemasu, Kaoru Toko, Taro Komori, Kenta Amemiya, Syuta Honda, Jean Philippe Attané, and Keita Ito

Subjects
Materials science, Physics and Astronomy (miscellaneous), Spintronics, Absorption spectroscopy, Magnetic circular dichroism, Order (ring theory), 02 engineering and technology, Composition (combinatorics), 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, Condensed Matter::Materials Science, Antiperovskite, Crystallography, Ferrimagnetism, 0103 physical sciences, General Materials Science, 010306 general physics, 0210 nano-technology
Abstract

Ferrimagnets in the vicinity of the magnetic compensation point are of particular interest for spin-torque-based spintronics applications, because they require lower switching currents and thus smaller switching energies. Room-temperature compensation is rather uncommon, but can be obtained by tuning the chemical concentrations of compounds such as ${\mathrm{Co}}_{0.79}{\mathrm{Tb}}_{0.21}$ or ${\mathrm{Co}}_{0.56}{\mathrm{Gd}}_{0.44}$, in order to find the single concentration at which one sublattice compensates the other. Here we study the ferrimagnetic ${\mathrm{Mn}}_{4\text{\ensuremath{-}}x}{\mathrm{Co}}_{x}\mathrm{N}$ films, showing that they presumably possess at room temperature not only one but two different Co concentrations at which the magnetic compensation occurs. Using x-ray absorption spectroscopy and x-ray magnetic circular dichroism measurements, we show that this startling behavior can be explained by the existence of two nonequivalent sites for the Co, when it is inserted in the antiperovskite structure of epitaxial ${\mathrm{Mn}}_{4\text{\ensuremath{-}}x}{\mathrm{Co}}_{x}\mathrm{N}$ films.

Published
2020
Full Text
View/download PDF

22. Ultrafast spin-charge interconversion in Rashba states probed by time-domain THz spectroscopy

Author

Manuel Bibes, Albert Fert, Florian Godel, Kirill D. Belashchenko, Diogo C. Vaz, Juliette Mangeney, Sukhdeep Dhillon, Luis Moreno, Juan-Carlos Rojas-Sánchez, Jérôme Tignon, Jean-Philippe Attané, Daniel Dolfi, Jean-Marie George, T. H. Dang, P. Bortolotti, Hanond Nong, Giovanni Baez Flores, Sophie Collin, Henri Jaffrès, J. Hawecker, Romain Lebrun, Laurent Vila, Abdelmadjid Anane, Paul Noël, Enzo Faycal Rongione, and Pierre Seneor

Subjects
Materials science, Condensed matter physics, Terahertz radiation, Topological insulator, Spin Hall effect, Physics::Optics, Condensed Matter::Strongly Correlated Electrons, Emission spectrum, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Spin (physics), Fermi gas, Ultrashort pulse, Surface states
Abstract

Terahertz (THz) emission spectroscopy in spin systems has become a very powerful method to generate THz radiation and to investigate the properties of Rashba or Topological Insulator surface states. The THz emission can be generated in heavy metallic or in more general Rashba systems. In 3d/5d transient metal bilayers THz emission in via the Inverse Spin Hall effect. Beyond heavy metal structures, Rashba states are strong candidates for THz-spintronics owing to their high spin to charge conversion properties. Here we present 2D electron gas with strong Rashba spin-orbit coupling and demonstrate THz emission via the Inverse Edelstein Effect.

Published
2020
Full Text
View/download PDF

23. Ferroelectric control of the spin to charge interconversion in oxide two-dimensional gas

Author

Diogo C. Vaz, Laurent Vila, Agnès Barthélémy, Paul Noël, Manuel Bibes, Annika Johansson, Albert Fert, Maxen Cosset-Cheneau, Ingrid Mertig, Jean-Philippe Attané, and Börge Göbel

Subjects
Physics, Condensed Matter::Materials Science, symbols.namesake, Spintronics, Ferromagnetism, Condensed matter physics, Fermi level, Spin Hall effect, symbols, Charge (physics), Spin (physics), Fermi gas, Ferroelectricity
Abstract

While classical spintronics relies on the use of ferromagnetic materials to generate and detect spin currents, spin-orbitronics exploits the spin-orbit coupling (SOC) in non-magnetic systems to reach this goal. An efficient spin current detection and generation has been achieved in heavy metals such as Pt, W or Ta thanks spin to charge interconversion due to the Spin Hall Effect. However, an even larger interconversion was made possible by the use of the Direct and Inverse Edelstein Effect (EE and IEE) in systems with broken inversion symmetry at interfaces, inducing Rashba SOC. We observed the IEE in an in interfaces-engineered high-carrier-density SrTiO3 two-dimensional electron gas (2DEG) by mean of SP-FMR. This interconversion can be modulated by the application of a gate voltage, reaching very high values thanks to the enhanced Rashba splitting due to orbital mixing, and the vicinity of the 2DEG Fermi level with an of avoided band crossing with topologically non-trivial order [1]. By combining this high interconversion efficiency with induced ferroelectric properties in SrTiO3, we show that it is possible to control the sign of the spin to charge interconversion in a non-volatile fashion by manipulating the spin orbit properties of the 2DEG through an electric control of the polarization direction [2]. This electrically controlled non-volatile interconversion sign switching opens the way to ultra-low power spintronics, in which non-volatility would be provided by ferroelectricity rather than by ferromagnetism.

Published
2020
Full Text
View/download PDF

24. Non-volatile electric control of spin–charge conversion in a SrTiO3 Rashba system

Author

Paul Noël, Laurent Vila, Luis M. Vicente Arche, Agnès Barthélémy, Felix Trier, Stéphane Fusil, Manuel Bibes, Diogo C. Vaz, Jean-Philippe Attané, Vincent Garcia, Julien Bréhin, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES [France]-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-THALES

Subjects
Physics, State variable, Multidisciplinary, Condensed matter physics, Spintronics, Charge (physics), 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, Ferroelectricity, chemistry.chemical_compound, Condensed Matter::Materials Science, Ferromagnetism, chemistry, 0103 physical sciences, Strontium titanate, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Multiferroics, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology, Spin-½
Abstract

After 50 years of development, the technology of today’s electronics is approaching its physical limits, with feature sizes smaller than 10 nanometres. It is also becoming clear that the ever-increasing power consumption of information and communication systems1 needs to be contained. These two factors require the introduction of non-traditional materials and state variables. As recently highlighted2, the remanence associated with collective switching in ferroic systems is an appealing way to reduce power consumption. A promising approach is spintronics, which relies on ferromagnets to provide non-volatility and to generate and detect spin currents3. However, magnetization reversal by spin transfer torques4 is a power-consuming process. This is driving research on multiferroics to achieve low-power electric-field control of magnetization5, but practical materials are scarce and magnetoelectric switching remains difficult to control. Here we demonstrate an alternative strategy to achieve low-power spin detection, in a non-magnetic system. We harness the electric-field-induced ferroelectric-like state of strontium titanate (SrTiO3)6–9 to manipulate the spin–orbit properties10 of a two-dimensional electron gas11, and efficiently convert spin currents into positive or negative charge currents, depending on the polarization direction. This non-volatile effect opens the way to the electric-field control of spin currents and to ultralow-power spintronics, in which non-volatility would be provided by ferroelectricity rather than by ferromagnetism. The polarization direction of a ferroelectric-like state can be used to control the conversion of spin currents into charge currents at the surface of strontium titanate, a non-magnetic oxide.

Published
2020
Full Text
View/download PDF

25. Independence of the inverse spin Hall effect with the magnetic phase in thin NiCu films

Author

Jean-François Jacquot, Serge Gambarelli, Cécile Grèzes, Yu Fu, Vincent Baltz, Laurent Vila, Jean-Philippe Attané, Maxen Cosset-Cheneau, Paul Noël, Patrick Warin, Christian Rinaldi, Ariel Brenac, Sara Varotto, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Politecnico di Milano [Milan] (POLIMI), SYstèmes Moléculaires et nanoMatériaux pour l’Energie et la Santé (SYMMES), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), ANR-17-CE24-0026,OISO,SPINORBITRONIQUE A BASE D'OXYDES.(2017), and ANR-16-CE24-0017,TOP-RISE,Isolant topologique et etats d'interfaces Rashba pour l'électronique de spin(2016)

Subjects
Physics, Condensed Matter - Materials Science, Condensed matter physics, Magnetic order, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, General Physics and Astronomy, Inverse, chemistry.chemical_element, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 01 natural sciences, Condensed Matter::Materials Science, Ferromagnetism, chemistry, 0103 physical sciences, Spin Hall effect, Magnetic phase, Condensed Matter::Strongly Correlated Electrons, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, Platinum, Independence (probability theory), Spin-½
Abstract

Large spin Hall angles have been observed in 3d ferromagnets, but their origin, and especially their link with the ferromagnetic order, remain unclear. Here, we investigate the inverse spin Hall effect of Ni60Cu40 and Ni50Cu50 across their Curie temperature using spin pumping experiments. We evidence that the inverse spin Hall effect in these samples is comparable to that of platinum, and that it is insensitive to the magnetic order. These results points towards a Heisenberg localized model of the transition, and suggest that the large spin Hall effects in 3d ferromagnets can be independent of the magnetic phase., 3 figures

Published
2020
Full Text
View/download PDF

26. Switchable two-dimensional electron gas based on ferroelectric Ca:SrTiO3

Author

Felix Trier, Anke Sander, Alain Sacuto, Yann Gallais, Laurent Vila, Pierre Hemme, Maxen Cosset-Cheneau, Stéphane Fusil, Manuel Bibes, Vincent Garcia, Brahim Dkhil, Maximilien Cazayous, Paul Noël, Agnès Barthélémy, Julien Bréhin, Luis M. Vicente-Arche, Jean-Philippe Attané, Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux et Phénomènes Quantiques (MPQ (UMR_7162)), Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP), SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Laboratoire Structures, Propriétés et Modélisation des solides (SPMS), Institut de Chimie du CNRS (INC)-CentraleSupélec-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), THALES [France]-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Université Paris Cité (UPCité), and ANR-17-CE24-0026,OISO,SPINORBITRONIQUE A BASE D'OXYDES.(2017)

Subjects
Phase transition, Condensed Matter - Materials Science, Materials science, Physics and Astronomy (miscellaneous), Spintronics, Condensed matter physics, business.industry, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, 02 engineering and technology, Electron, 021001 nanoscience & nanotechnology, 01 natural sciences, Ferroelectricity, Condensed Matter::Materials Science, Semiconductor, Electric field, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Materials Science, 010306 general physics, 0210 nano-technology, business, Single crystal, Sheet resistance
Abstract

International audience; Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spin-orbit coupling. Although the amplitude of this electric field can be modulated by an external gate voltage, which in turn tunes the 2DEG carrier density, sheet resistance and other related properties, this modulation is volatile. Here, we report the design of a "ferroelectric" 2DEG whose transport properties can be electrostatically switched in a nonvolatile way. We generate a 2DEG by depositing a thin Al layer onto a SrTiO 3 single crystal in which 1% of Sr is substituted by Ca to make it ferroelectric. Signatures of the ferroelectric phase transition at 25 K are visible in the Raman response and in the temperature dependences of the carrier density and sheet resistance that shows a hysteretic dependence on electric field as a consequence of ferroelectricity. We suggest that this behavior may be extended to other oxide 2DEGs, leading to novel types of ferromagnet-free spintronic architectures.

Published
2020
Full Text
View/download PDF

27. Electric-Field Control of Spin Current Generation and Detection in Ferromagnet-Free SrTiO

Author

Felix, Trier, Diogo C, Vaz, Pierre, Bruneel, Paul, Noël, Albert, Fert, Laurent, Vila, Jean-Philippe, Attané, Agnès, Barthélémy, Marc, Gabay, Henri, Jaffrès, and Manuel, Bibes

Abstract

Spintronics entails the generation, transport, manipulation and detection of spin currents, usually in hybrid architectures comprising interfaces whose impact on performance is detrimental. In addition, how spins are generated and detected is generally material specific and determined by the electronic structure. Here, we demonstrate spin current generation, transport and electrical detection, all within a single non-magnetic material system: a SrTiO

Published
2019

28. Large Current Driven Domain Wall Mobility and Gate Tuning of Coercivity in Ferrimagnetic Mn

Author

Toshiki, Gushi, Matic, Jovičević Klug, Jose, Peña Garcia, Sambit, Ghosh, Jean-Philippe, Attané, Hanako, Okuno, Olivier, Fruchart, Jan, Vogel, Takashi, Suemasu, Stefania, Pizzini, and Laurent, Vila

Abstract

Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals and rare-earths. Here, we show that Mn

Published
2019

29. Mapping giant spin-charge conversion to the band structure in a topological oxide two-dimensional electron gas (Conference Presentation)

Author

Laurent Vila, Nicolas Bergeal, Hanako Okuno, Pierre Bruneel, Jean-Philippe Attané, Flavio Y. Bruno, Börge Göbel, Annika Johansson, Albert Fert, Paul Noël, Siobhan McKeown-Walker, Felix Trier, Agnès Barthélémy, Manuel Bibes, Ingrid Mertig, Gyanendra Singh, Felix Baumberger, Diogo C. Vaz, Manali Vivek, Marc Gabay, and Anke Sander

Subjects
chemistry.chemical_compound, Materials science, chemistry, Condensed matter physics, Oxide, Charge (physics), Electronic band structure, Spin-½
Published
2019
Full Text
View/download PDF

30. Non-volatile electric control of spin-charge conversion in a SrTiO

Author

Paul, Noël, Felix, Trier, Luis M, Vicente Arche, Julien, Bréhin, Diogo C, Vaz, Vincent, Garcia, Stéphane, Fusil, Agnès, Barthélémy, Laurent, Vila, Manuel, Bibes, and Jean-Philippe, Attané

Abstract

After 50 years of development, the technology of today's electronics is approaching its physical limits, with feature sizes smaller than 10 nanometres. It is also becoming clear that the ever-increasing power consumption of information and communication systems

Published
2019

31. Magnetic and magneto-transport properties of Mn4N thin films by Ni substitution and their possibility of magnetic compensation

Author

Stefania Pizzini, Jean-Philippe Attané, Kaoru Toko, Shinji Isogami, Jan Vogel, Takashi Suemasu, Laurent Vila, Taro Komori, Toshiki Gushi, Akihito Anzai, Graduate School of Pure and Applied Sciences, University of Tsukuba, Université de Tsukuba = University of Tsukuba, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institute of applied physics, Graduate School of Pure and Applied Sciences, Tsukuba, Micro et NanoMagnétisme (MNM ), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), National Institute for Materials Science (NIMS), Micro et NanoMagnétisme (NEEL - MNM), ANR-17-CE24-0026,OISO,SPINORBITRONIQUE A BASE D'OXYDES.(2017), and ANR-16-CE24-0017,TOP-RISE,Isolant topologique et etats d'interfaces Rashba pour l'électronique de spin(2016)

Subjects
010302 applied physics, [PHYS]Physics [physics], Materials science, Condensed matter physics, Magnetoresistance, Spintronics, Spin-transfer torque, General Physics and Astronomy, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Magnetization, Hall effect, Electrical resistivity and conductivity, 0103 physical sciences, Thin film, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology, Spontaneous magnetization, ComputingMilieux_MISCELLANEOUS
Abstract

Ferrimagnets are of interest in spintronics owing to the enhancement of spin transfer and spin–orbit torque in the vicinity of the magnetic compensation point. Here, we study the possibility of achieving compensation at room temperature in Mn4−xNixN films grown on SrTiO3(001) substrates by molecular beam epitaxy. The magnetic and magneto-transport properties of 30-nm-thick epitaxial Mn4−xNixN films (x = 0, 0.1, 0.25, and 0.5) were investigated. Ni introduction in Mn4N causes the spontaneous magnetization (MS) to decrease by 45% at x = 0.1 and by 75% at x = 0.25. All samples exhibited the perpendicular magnetic anisotropy required for spintronic applications as well as displaying a sharp magnetization reversal. Remarkably, the sign of the anomalous Hall resistivity changed in the samples between x = 0.1 and 0.25. Further, the magnetization increased for x = 0 and 0.1 and decreased for x = 0.25 when the temperature was decreased. Based on these results, we propose that there is a magnetic compensation composition between x = 0.1 and 0.25, where the magnetization of Mn4−xNixN becomes zero at room temperature. The small MS and perpendicular magnetic anisotropy of the Mn4−xNixN thin films, thus, make them suitable candidates for use in spin transfer torque-based devices.

Published
2019
Full Text
View/download PDF

32. Large Current Driven Domain Wall Mobility and Gate Tuning of Coercivity in Ferrimagnetic Mn4N Thin Films

Author

Takashi Suemasu, Stefania Pizzini, Jean-Philippe Attané, Laurent Vila, Olivier Fruchart, Sambit Ghosh, Jose Peña Garcia, Toshiki Gushi, Matic Jovičević Klug, Hanako Okuno, Jan Vogel, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Micro et NanoMagnétisme (MNM ), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ANR-17-CE24-0026,OISO,SPINORBITRONIQUE A BASE D'OXYDES.(2017), ANR-16-CE24-0017,TOP-RISE,Isolant topologique et etats d'interfaces Rashba pour l'électronique de spin(2016), ANR-10-LABX-0051,LANEF,Laboratory of Alliances on Nanosciences - Energy for the Future(2010), European Project: 754303, Micro et NanoMagnétisme (NEEL - MNM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Université de Tsukuba = University of Tsukuba

Subjects
Materials science, Kerr microscopy, Bioengineering, 02 engineering and technology, nitrides thin films, 7. Clean energy, Magnetization, Condensed Matter::Materials Science, Ferrimagnetism, General Materials Science, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Micromagnetics, spintronics, Condensed matter physics, Spintronics, Spin polarization, Mechanical Engineering, Spin-transfer torque, spin transfer torque, General Chemistry, Coercivity, 021001 nanoscience & nanotechnology, Condensed Matter Physics, micromagnetism, Domain wall (magnetism), magnetic domain walls, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology
Abstract

13 pages, 4 figures, and supplementary information; International audience; Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals and rare-earths. Here, we show that Mn4N, a rare-earth free ferrimagnet made of abundant elements, is an exciting candidate for the development of sustainable spintronics devices. Mn4N thin films grown epitaxially on SrTiO3 substrates possess remarkable properties, such as a perpendicular magnetisation, a very high extraordinary Hall angle (2%) and smooth domain walls, at the millimeter scale. Moreover, domain walls can be moved at record speeds by spin polarised currents, in absence of spin-orbit torques. This can be explained by the large efficiency of the adiabatic spin transfer torque, due to the conjunction of a reduced magnetisation and a large spin polarisation. Finally, we show that the application of gate voltages through the SrTiO3 substrates allows modulating the Mn4N coercive field with a large efficiency.

Published
2019
Full Text
View/download PDF

33. Magnetic properties of perpendicularly magnetized [Au/Co/Pd] n thin films and nanostructures with Dzyaloshinskii-Moriya interaction

Author

Jean-Philippe Attané, Chloé Bouard, Van Tuong Pham, Patrick Warin, Laurent Vila, Alain Marty, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), This work was partly supported by the French Agence Nationale de la Recherche (ANR) through Projects SPINHALL (2010-2013) and SOSPIN (2013-2016), and ANR-10-BLAN-1011,SPINHALL,Nouveaux concepts pour l'Effet Hall de Spin et son exploitation en spintronique(2010)

Subjects
Materials science, Magnetoresistance, Condensed matter physics, Nanowire, General Physics and Astronomy, 02 engineering and technology, Coercivity, 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 01 natural sciences, lcsh:QC1-999, Condensed Matter::Materials Science, Domain wall (magnetism), Hall effect, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Magnetic force microscope, Thin film, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology, Anisotropy, lcsh:Physics
Abstract

International audience; Magnetic force microscopy imaging enable to extract the main magnetic parameters (saturation magnetization, anisotropy, domain size, exchange constant). The magnetoresistance and the extraordinary Hall effect of the material have been characterized using nanostructures patterned on the multilayer. Both the magnetization reversal mode and the magnetotransport properties are found to depend strongly on the nanowire width. The relatively low coercive field, the high anisotropy, and the possibility to control domain wall motion in sub-100 nm wires make this system an interesting alternative to Pt-based multilayers for spin-transfer torques experiments. © 2018 Author(s).

Published
2018
Full Text
View/download PDF

34. Calculation method of spin accumulations and spin signals in nanostructures using spin resistors

Author

Williams Savero Torres, Matthieu Jamet, Laurent Vila, Jean-Philippe Attané, Alain Marty, P. Laczkowski, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and ANR-13-BS10-0005,SOspin,Courants de spin et couple de transfert de spin produits par des effets spin-orbites(2013)

Subjects
Spin pumping, Materials science, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed matter physics, Spin polarization, Solid-state physics, Spintronics, FOS: Physical sciences, Spin engineering, Heterojunction, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 01 natural sciences, Electronic, Optical and Magnetic Materials, Condensed Matter::Materials Science, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, Spinplasmonics, Condensed Matter::Strongly Correlated Electrons, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology, Spin-½
Abstract

The understanding and calculation of spin transport are essential elements for the development of spintronics devices. Here, we propose a simple method to calculate analytically the spin accumulations, spin currents and magnetoresistances in complex systems. This can be used both for CPP experiments in multilayers and for multiterminal nanostructures made of semiconductors, oxides, metals and carbon allotropes., Comment: 12 pages and 7 figures

Published
2018
Full Text
View/download PDF

35. Millimeter-sized magnetic domains in perpendicularly magnetized ferrimagnetic Mn4N thin films grown on SrTiO3

Author

Fumiya Takata, Takashi Suemasu, Akihito Anzai, Olivier Fruchart, Stefania Pizzini, Jean-Philippe Attané, Laurent Vila, Toshiki Gushi, Alain Marty, Jan Vogel, Kaoru Toko, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institute of applied physics, Graduate School of Pure and Applied Sciences, Tsukuba, Micro et NanoMagnétisme (NEEL - MNM), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Micro et NanoMagnétisme (MNM )

Subjects
Condensed Matter - Materials Science, Materials science, Physics and Astronomy (miscellaneous), Magnetic domain, Spintronics, Condensed matter physics, General Engineering, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, General Physics and Astronomy, Context (language use), 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Domain wall (magnetism), Ferrimagnetism, Remanence, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Thin film, 010306 general physics, 0210 nano-technology, Anisotropy
Abstract

The use of epitaxial layers for domain wall-based spintronic applications is often hampered by the presence of pinning sites. Here, we show that when depositing Mn4N (10 nm) epitaxial films, the replacement of MgO(001) by SrTiO3(001) substrates allows minimizing the misfit, and to obtain an improved crystalline quality, a sharper switching, a full remanence, a high anisotropy and remarkable millimeter-sized magnetic domains, with straight and smooth domain walls. In a context of rising interest for current-induced domain wall motion in rare-earth ferrimagnets, we show that Mn4N/SrTiO3, which is rare-earth free, constitutes a very promising ferrimagnetic system for current-induced domain wall motion.

Published
2018
Full Text
View/download PDF

36. Giant magnetoresistance in lateral metallic nanostructures for spintronic applications

Author

G. Zahnd, C. Vergnaud, Van Tuong Pham, Alain Marty, C. Beigné, Jean-Philippe Attané, Laurent Vila, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-13-BS10-0005,SOspin,Courants de spin et couple de transfert de spin produits par des effets spin-orbites(2013), and ANR-10-LABX-0051,LANEF,Laboratory of Alliances on Nanosciences - Energy for the Future(2010)

Subjects
Multidisciplinary, Materials science, Condensed matter physics, Spintronics, lcsh:R, lcsh:Medicine, Giant magnetoresistance, 02 engineering and technology, Degrees of freedom (mechanics), Coercivity, 021001 nanoscience & nanotechnology, 01 natural sciences, Signal, Article, Magnetization, 0103 physical sciences, lcsh:Q, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], lcsh:Science, 010306 general physics, 0210 nano-technology, Anisotropy, ComputingMilieux_MISCELLANEOUS, Spin-½
Abstract

In this letter, we discuss the shift observed in spintronics from the current-perpendicular-to-plane geometry towards lateral geometries, illustrating the new opportunities offered by this configuration. Using CoFe-based all-metallic LSVs, we show that giant magnetoresistance variations of more than 10% can be obtained, competitive with the current-perpendicular-to-plane giant magnetoresistance. We then focus on the interest of being able to tailor freely the geometries. On the one hand, by tailoring the non-magnetic parts, we show that it is possible to enhance the spin signal of giant magnetoresistance structures. On the other hand, we show that tailoring the geometry of lateral structures allows creating a multilevel memory with high spin signals, by controlling the coercivity and shape anisotropy of the magnetic parts. Furthermore, we study a new device in which the magnetization direction of a nanodisk can be detected. We thus show that the ability to control the magnetic properties can be used to take advantage of all the spin degrees of freedom, which are usually occulted in current-perpendicular-to-plane devices. This flexibility of lateral structures relatively to current-perpendicular-to-plane structures is thus found to offer a new playground for the development of spintronic applications.

Published
2017
Full Text
View/download PDF

37. Large enhancement of the spin Hall effect in Au by side-jump scattering on Ta impurities

Author

Vincent Maurel, Cyrile Deranlot, Patrick Warin, C. Bouard, Henri Jaffrès, P. Laczkowski, Hongxin Yang, Yu Fu, Van Tuong Pham, Albert Fert, Mairbek Chshiev, Alain Marty, Juan-Carlos Rojas-Sánchez, Jean-Philippe Attané, Paul Noël, Stéphane Collin, J.-M. George, Laurent Vila, and G. Zahnd

Subjects
Physics, Spintronics, Condensed matter physics, Scattering, Alloy, 02 engineering and technology, engineering.material, 021001 nanoscience & nanotechnology, 01 natural sciences, Omega, Electrical resistivity and conductivity, Impurity, 0103 physical sciences, engineering, Spin Hall effect, 010306 general physics, 0210 nano-technology, Spin-½
Abstract

We present measurements of the spin Hall effect (SHE) in AuW and AuTa alloys for a large range of W or Ta concentrations by combining experiments on lateral spin valves and ferromagnetic-resonance/spin-pumping techniques. The main result is the identification of a large enhancement of the spin Hall angle (SHA) by the side-jump mechanism on Ta impurities, with a SHA as high as $+0.5$ (i.e., $50%$) for about 10% of Ta. In contrast, the SHA in AuW does not exceed $+0.15$ and can be explained by intrinsic SHE of the alloy without significant extrinsic contribution from skew or side-jump scattering by W impurities. The AuTa alloys, as they combine a very large SHA with a moderate resistivity (smaller than $85\phantom{\rule{0.28em}{0ex}}\ensuremath{\mu}\mathrm{\ensuremath{\Omega}}\phantom{\rule{0.16em}{0ex}}\text{cm}$), are promising for spintronic devices exploiting the SHE.

Published
2017
Full Text
View/download PDF

38. Magnetic reversal in rare-earth free Mn4 − xNixN epitaxial films below and above Ni composition needed for magnetic compensation around room temperature

Author

Kaoru Toko, Τakayasu Hanashima, Kenta Amemiya, Laurent Vila, Taku Hirose, Takashi Suemasu, Jean-Philippe Attané, Toshiki Gushi, Taro Komori, Graduate School of Pure and Applied Sciences, University of Tsukuba, Université de Tsukuba = University of Tsukuba, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Institute of applied physics, and Graduate School of Pure and Applied Sciences, Tsukuba

Subjects
010302 applied physics, X-ray absorption spectroscopy, Materials science, Absorption spectroscopy, Magnetic moment, Spintronics, Magnetic circular dichroism, General Physics and Astronomy, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, Geomagnetic reversal, Crystallography, 0103 physical sciences, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Absorption (chemistry), 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract

Ferrimagnets close to the magnetic compensation are excellent candidates to spin-torque-based spintronic applications, as their small magnetizations allow lowering switching currents. Here, we studied the magnetic compensation of Mn4 − xNixN epitaxial films by performing x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) measurements at the L2,3 absorption edges of Mn and Ni atoms and compared them with those of Ni3FeN films. The XAS spectrum of the Ni3FeN films exhibits shoulders at approximately 2 eV above the Ni L2,3 main peaks, originating from orbitals hybridization between Ni 3d at face-centered (II) sites and N 2p at body-centered sites. However, such shoulders are not observed at the Ni L2,3 edges of the Mn4 − xNixN films (x = 0.1 and 0.25). These results indicate that the orbitals of Ni atoms do not hybridize with those of N atoms. Hence, Ni atoms preferentially occupy corner (I) sites, where hybridization is weak because of the relatively long distance between Ni at I sites and N atoms. The XMCD signals of Mn and Ni atoms reverse sign between x = 0.1 and 0.25. This shows that the directions of the magnetic moments carried by Mn and Ni atoms are reversed, indicating that the magnetic compensation occurs in the range 0.1

Published
2020
Full Text
View/download PDF

39. Non-local electrical spin injection and detection in germanium at room temperature

Author

Céline Vergnaud, Alain Marty, Michele Celebrano, Carlo Zucchetti, Jean-Philippe Attané, Julie Widiez, Henri Jaffrès, Matthieu Jamet, Alberto Ferrari, F. Rortais, Federico Bottegoni, Giovanni Isella, Franco Ciccacci, Jean-Marie George, Marco Finazzi, Lavinia Ghirardini, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Politecnico di Milano [Milan] (POLIMI), Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES-Centre National de la Recherche Scientifique (CNRS), ANR-13-BS10-0002,SiGeSPIN,Spintronique dans le silicium et le germanium(2013), and THALES [France]-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Physics and Astronomy (miscellaneous), Silicon, chemistry.chemical_element, FOS: Physical sciences, Germanium, 02 engineering and technology, 01 natural sciences, Electric charge, Signal, Condensed Matter::Materials Science, 0103 physical sciences, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, Spin (physics), Condensed Matter - Materials Science, business.industry, Materials Science (cond-mat.mtrl-sci), 021001 nanoscience & nanotechnology, 3. Good health, Tunnel magnetoresistance, Semiconductor, chemistry, Optoelectronics, Charge carrier, 0210 nano-technology, business
Abstract

Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain". The next generation electronics may operate on the spin of carriers instead of their charge and germanium appears as the best hosting material to develop such a platform for its compatibility with mainstream silicon technology and the long electron spin lifetime at room temperature. Moreover, the energy proximity between the direct and indirect bandgaps allows for optical spin injection and detection within the telecommunication window. In this letter, we demonstrate injection of pure spin currents (\textit{i.e.} with no associated transport of electric charges) in germanium, combined with non-local spin detection blocks at room temperature. Spin injection is performed either electrically through a magnetic tunnel junction (MTJ) or optically, exploiting the ability of lithographed nanostructures to manipulate the distribution of circularly-polarized light in the semiconductor. Pure spin current detection is achieved using either a MTJ or the inverse spin-Hall effect (ISHE) across a platinum stripe. These results broaden the palette of tools available for the realization of opto-spintronic devices., Comment: 14 pages and 5 figures

Published
2017
Full Text
View/download PDF

40. Geometrical control of pure spin current induced domain wall depinning

Author

A Pfeiffer, Mathias Kläui, Luis Lopez-Diaz, Jean-Philippe Attané, W. Savero-Torres, Nils Richter, Laurent Vila, Robert M. Reeve, Michele Voto, Inst. F. Biogeochemie Meereschemie, Martin-Luther-King Platz 6, D-20146 Hamburg 13, affiliation inconnue, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Fachbereich Physik [Konstanz], and University of Konstanz

Subjects
Pure spin current, Field (physics), Magnetic domain, Geometrical constrictions in nanostructures, Spin valve, 02 engineering and technology, 01 natural sciences, Magnetization, 0103 physical sciences, Computational physics, General Materials Science, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, ComputingMilieux_MISCELLANEOUS, Spin-½, Physics, Condensed matter physics, Magnetism, Spin-transfer torque, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Domain wall motion, Domain wall (magnetism), Spin Hall effect, 0210 nano-technology
Abstract

[EN] We investigate the pure spin-current assisted depinning of magnetic domain walls in half ring based Py/Al lateral spin valve structures. Our optimized geometry incorporating a patterned notch in the detector electrode, directly below the Al spin conduit, provides a tailored pinning potential for a transverse domain wall and allows for a precise control over the magnetization configuration and as a result the domain wall pinning. Due to the patterned notch, we are able to study the depinning field as a function of the applied external field for certain applied current densities and observe a clear asymmetry for the two opposite field directions. Micromagnetic simulations show that this can be explained by the asymmetry of the pinning potential. By direct comparison of the calculated efficiencies for different external field and spin current directions, we are able to disentangle the different contributions from the spin transfer torque, Joule heating and the Oersted field. The observed high efficiency of the pure spin current induced spin transfer torque allows for a complete depinning of the domain wall at zero external field for a charge current density of 6 1011 A m−2, which is attributed to the optimal control of the position of the domain wall., Comisión Europea (P7-PEOPLE-2013-ITN 608031, FP7-ICT-2009-5) Gobierno de España (MAT2014-52477-C5-4-P) Junta de Castilla y Leon (SA090U16) German Ministry for Education and Science (BMBF) German Research Foundation (DFG) via the DFG collaborative research centre SFB/TRR 173 SPIN+X Graduate School Material Science in Mainz (DFG/GSC 266) European Research Council - MultiRev (665672) Research Center of Innovative and Emerging Materials at Johannes Gutenberg University (CINEMA) German Academic Exchange Service (DAAD) via the SpinNet Program 56268455 French RENATECH network

Published
2016
Full Text
View/download PDF

41. Evidence for spin-to-charge conversion by Rashba coupling in metallic states at the Fe/Ge(111) interface

Author

F. Rortais, Serge Gambarelli, Stefan Blügel, Jean-Philippe Attané, Stéphanie Pouget, Hanako Okuno, Matthieu Jamet, Paul Noël, P. Laczkowski, C. Vergnaud, Laurent Vila, Juan-Carlos Rojas-Sánchez, M.-T. Dau, Ashis Kumar Nandy, Alain Marty, C. Beigné, Henri Jaffrès, J.-M. George, Simón Oyarzún, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Service Général des Rayons X (SGX ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Reconnaissance Ionique et Chimie de Coordination (RICC), SYstèmes Moléculaires et nanoMatériaux pour l’Energie et la Santé (SYMMES), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES [France]-Centre National de la Recherche Scientifique (CNRS), Forschungszentrum Jülich GmbH | Centre de recherche de Juliers, Helmholtz-Gemeinschaft = Helmholtz Association, ANR-13-BS10-0002,SiGeSPIN,Spintronique dans le silicium et le germanium(2013), ANR-13-BS10-0005,SOspin,Courants de spin et couple de transfert de spin produits par des effets spin-orbites(2013), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut de Chimie du CNRS (INC)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-THALES

Subjects
Materials science, Science, General Physics and Astronomy, chemistry.chemical_element, Germanium, 02 engineering and technology, Electronic structure, 01 natural sciences, Article, General Biochemistry, Genetics and Molecular Biology, Computer Science::Emerging Technologies, 0103 physical sciences, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, Spin (physics), ComputingMilieux_MISCELLANEOUS, Coupling, Spin pumping, Multidisciplinary, Condensed matter physics, Spintronics, General Chemistry, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 3. Good health, chemistry, Spin Hall effect, Condensed Matter::Strongly Correlated Electrons, 0210 nano-technology, Rashba effect
Abstract

The spin–orbit coupling relating the electron spin and momentum allows for spin generation, detection and manipulation. It thus fulfils the three basic functions of the spin field-effect transistor. However, the spin Hall effect in bulk germanium is too weak to produce spin currents, whereas large Rashba effect at Ge(111) surfaces covered with heavy metals could generate spin-polarized currents. The Rashba spin splitting can actually be as large as hundreds of meV. Here we show a giant spin-to-charge conversion in metallic states at the Fe/Ge(111) interface due to the Rashba coupling. We generate very large charge currents by direct spin pumping into the interface states from 20 K to room temperature. The presence of these metallic states at the Fe/Ge(111) interface is demonstrated by first-principles electronic structure calculations. By this, we demonstrate how to take advantage of the spin–orbit coupling for the development of the spin field-effect transistor., Engineering the interaction between spin and charge is important for the creation of spintronics devices. Here, the authors show that the Rashba effect at a single crystalline Fe/Ge(111) interface produces enhanced spin-charge conversion, which could help develop a spin field-effect-transistor.

Published
2016
Full Text
View/download PDF

42. Ferromagnetic/Nonmagnetic Nanostructures for the Electrical Measurement of the Spin Hall Effect

Author

Van Tuong Pham, G. Zahnd, W. Savero-Torres, Matthieu Jamet, Laurent Vila, Jean-Philippe Attané, Alain Marty, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-13-BS10-0005,SOspin,Courants de spin et couple de transfert de spin produits par des effets spin-orbites(2013), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Bioengineering, 02 engineering and technology, Quantum Hall effect, 01 natural sciences, Quantum spin Hall effect, 0103 physical sciences, General Materials Science, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, ComputingMilieux_MISCELLANEOUS, [PHYS]Physics [physics], Spin pumping, Spin polarization, Spintronics, Condensed matter physics, Mechanical Engineering, Spin engineering, General Chemistry, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Spinplasmonics, Spin Hall effect, Condensed Matter::Strongly Correlated Electrons, 0210 nano-technology
Abstract

Spin-orbitronics is based on the ability of spin-orbit interactions to achieve the conversion between charge currents and pure spin currents. As the precise evaluation of the conversion efficiency becomes a crucial issue, the need for straightforward ways to observe this conversion has emerged as one of the main challenges in spintronics. Here, we propose a simple device, akin to the ferromagnetic/nonmagnetic bilayers used in most spin-orbit torques experiments, and consisting of a spin Hall effect wire connected to two transverse ferromagnetic electrodes. We show that this system allows probing electrically the direct and inverse conversion in a spin Hall effect system and measuring both the spin Hall angle and the spin diffusion length. By applying this method to several spin Hall effect materials (Pt, Pd, Au, Ta, W), we show that it represents a promising tool for the metrology of spin-orbit materials.

Published
2016
Full Text
View/download PDF

43. Electrical detection of magnetic domain walls by inverse and direct spin Hall effect

Author

W. Savero Torres, Paul Noël, Matthieu Jamet, Alain Marty, Jean-Philippe Attané, G. Zahnd, Van Tuong Pham, Laurent Vila, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and ANR-13-BS10-0005,SOspin,Courants de spin et couple de transfert de spin produits par des effets spin-orbites(2013)

Subjects
Physics, Physics and Astronomy (miscellaneous), Spin polarization, Magnetic domain, Condensed matter physics, Nanowire, 02 engineering and technology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 01 natural sciences, Condensed Matter::Materials Science, Transverse plane, Domain wall (magnetism), Ferromagnetism, 0103 physical sciences, Spin Hall effect, Condensed Matter::Strongly Correlated Electrons, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS, Spin-½
Abstract

Domain wall (DW) detection is a prerequisite to perform current-induced DW motion. In this letter, we demonstrate a detection method, based on the ability for a ferromagnetic nanowire, in which a DW is pinned, to inject or detect a pure spin current. The device consists of such a ferromagnetic nanowire in contact with an orthogonal spin Hall effect (SHE) nanowire. When a current flows along the ferromagnetic nanowire, and provided a DW is pinned, the pure spin current is transformed into a transverse voltage by inverse spin Hall effect (ISHE). In the reciprocal configuration, the pure spin current created by the direct SHE, generates a transverse voltage along the ferromagnetic wire. Finite element method (FEM) simulations allow estimating the Pt spin Hall angle (SHA) (7.5 ± 0.5%). This technique provides an electrical way to study the DW motion, a device akin to the ferromagnetic/spin Hall effect bilayers typically used for spin-orbit torques experiments.

Published
2016
Full Text
View/download PDF

44. Spin pumping and spin-orbit effects in Ge (Conference Presentation)

Author

Jean Philippe Attané, Stefan Blügel, C. Vergnaud, Stéphanie Pouget, Ashis Kumar Nandy, Matthieu Jamet, Serge Gambarelli, Henri Jaffrès, Laurent Vila, Jean Marie George, F. Rortais, Alain Marty, C. Beigné, Juan-Carlos Rojas-Sánchez, Simón Oyarzún, Hanako Okuno, and P. Laczkowski

Subjects
010302 applied physics, Physics, Spin pumping, Condensed matter physics, Spintronics, Spin polarization, 02 engineering and technology, Magnetic semiconductor, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 01 natural sciences, Quantum spin Hall effect, Spin wave, 0103 physical sciences, Spin Hall effect, Spinplasmonics, Condensed Matter::Strongly Correlated Electrons, 0210 nano-technology
Abstract

The field of spintronics is based on the manipulation of the spin degree of freedom. It uses the carrier spin angular momentum as a basic functional unit in addition to the charge. The first requirement of a semiconductor-based spintronic technology is the efficient generation of spin-polarized carriers into the device heterostructure made of Si or Ge (the materials of mainstream microelectronics) at room temperature. In this presentation, we focus on the generation of a sizeable spin population into Ge by spin pumping. Spin pumping corresponds to the generation of a pure spin current in the Ge film by exciting the ferromagnetic resonance of an adjacent ferromagnetic electrode with microwaves. The pure spin current is then detected using spin-orbit based effects. Our aim is to understand the basic mechanisms of spin pumping into Ge as well as the spin-to-charge conversion by inverse spin Hall effect (ISHE, bulk effect) [1-4] and Rashba-Edelstein effect (interface effect) [5]. The influence of interface states is clearly demonstrated. Moreover, using the spin-split Rashba sub-surface states of the Ge(111) surface, we succeeded in demonstrating a giant conversion of a spin current generated by spin pumping into a charge current by the Rashba-Edelstein effect [6,7]. Our experimental findings are supported by ab-initio calculations. 1. Rojas-Sanchez, J.-C. et al. Spin pumping and inverse spin Hall effect in germanium. Phys. Rev. B 88, (2013). 2. Kato, Y. K., Myers, R. C., Gossard, A. C. and Awschalom, D. D. Observation of the spin Hall effect in semiconductors. Science 306, 1910–1913 (2004). 3. Valenzuela, S. O. and Tinkham, M. Direct electronic measurement of the spin Hall effect. Nature 442, 176–179 (2006). 4. Saitoh, E., Ueda, M., Miyajima, H. and Tatara, G. Conversion of spin current into charge current at room temperature: Inverse spin-Hall effect. Appl Phys Lett 88, 2509 (2006). 5. Bychkov, Y. A. and Rashba, E. I. Oscillatory effects and the magnetic susceptibility of carriers in inversion layers. Journal of Physics C: Solid State Physics 17, 6039–6045 (1984). 6. Edelstein, V. M. Spin polarization of conduction electrons induced by electric current in two-dimensional asymmetric electron systems. Solid State Communications 73, 233–235 (1990). 7. Rojas-Sanchez, J.-C. et al. Spin-to-charge conversion using Rashba coupling at the interface between non-magnetic materials. Nat Comms 4, (2013).

Published
2016
Full Text
View/download PDF

45. Using domain walls to perform non-local measurements with high spin signal amplitudes

Author

G. Zahnd, M. Jamet, Jean-Philippe Attané, Laurent Vila, Van Tuong Pham, V. D. Nguyen, P. Laczkowski, L. Notin, Alain Marty, C. Beigné, W. Savero Torres, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and ANR-13-BS10-0005,SOspin,Courants de spin et couple de transfert de spin produits par des effets spin-orbites(2013)

Subjects
Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, Spin polarization, Magnetic domain, 02 engineering and technology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 01 natural sciences, Signal, Ferromagnetic resonance, Magnetization, Amplitude, Ferromagnetism, 0103 physical sciences, Condensed Matter::Strongly Correlated Electrons, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS, Spin-½
Abstract

Standard non-local measurements require lateral spin-valves with two different ferromagnetic electrodes, to create and to detect the spin accumulation. Here we show that non-local measurements can also be performed in a cross-shaped nanostructure, made of a single ferromagnetic wire connected to an orthogonal non-magnetic wire. A magnetic domain wall located underneath the ferromagnetic/non-magnetic interface is used to control the magnetizations of the injection and detection zones. As these zones can be very close, our results display spin signals possessing amplitudes larger than those obtained in conventional non-local measurements. We also show that this method can be used as a domain wall detection technique.

Published
2016
Full Text
View/download PDF

46. Non-adiabatic spin-torques in narrow magnetic domain walls

Author

Joo-Von Kim, Andrei P. Mihai, Ioan Tudosa, Eric E. Fullerton, Yves Samson, Claude Chappert, Felipe Garcia-Sanchez, Alain Marty, Laurent Vila, Liliana D. Buda-Prejbeanu, Dafiné Ravelosona, C. Burrowes, and Jean-Philippe Attané

Subjects
Physics, Magnetization, Magnetization dynamics, Ferromagnetism, Magnetic domain, Condensed matter physics, Spins, Spintronics, Exchange interaction, General Physics and Astronomy, Anisotropy
Abstract

There is considerable debate over the size and direction of the non-adiabatic component of the spin-torque generated when a current flows across a domain wall in a ferromagnet. Measurements of this property in a wall just 1–10 nm wide suggest its value is small, arising from purely magnetic dissipation mechanisms. Torques appear between charge carrier spins and local moments in regions of ferromagnetic media where spatial magnetization gradients occur, such as a domain wall, owing to an exchange interaction. This phenomenon has been predicted by different theories1,2,3,4,5,6,7 and confirmed in a number of experiments on metallic and semiconductor ferromagnets8,9,10,11,12,13,14,15,16,17,18,19. Understanding the magnitude and orientation of such spin-torques is an important problem for spin-dependent transport and current-driven magnetization dynamics, as domain-wall motion underlies a number of emerging spintronic technologies20,21. One outstanding issue concerns the non-adiabatic spin-torque component β, which has an important role in wall dynamics, but no clear consensus has yet emerged over its origin or magnitude. Here, we report an experimental measurement of β in perpendicularly magnetized films with narrow domain walls (1–10 nm). By studying thermally activated wall depinning, we deduce β from the variation of the Arrhenius transition rate with applied currents. Surprisingly, we find β to be small and relatively insensitive to the wall width, which stands in contrast to predictions from transport theories2,5,6,7. In addition, we find β to be close to the Gilbert damping constant α, which, in light of similar results on planar anisotropy systems15, suggests a universal origin for the non-adiabatic torque.

Published
2009
Full Text
View/download PDF

47. Magnetic domain wall pinning and coercivity in FePt/MgO and FePt/Pt thin films

Author

Jean-Philippe Attané, Laurent Vila, Thomas Jourdan, Frédéric Lançon, Alain Marty, and C. Beigné

Subjects
Magnetization, Hysteresis, Domain wall (magnetism), Thin layers, Materials science, Condensed matter physics, Magnetic domain, Magnetic force microscope, Coercivity, Condensed Matter Physics, Magnetic hysteresis, Electronic, Optical and Magnetic Materials
Abstract

FePt thin layers have been epitaxied either on Pt(0 0 1) or on MgO(0 0 1) substrates, and magnetically characterized using extraordinary Hall effect magnetometry and magnetic force microscopy. The coercivity originates in both cases from the pinning of domain walls on structural defects. Whereas the coercivity increases with the FePt layer thickness in FePt/Pt samples, it decreases in FePt/MgO samples. This discrepancy is explained on the basis of structural observations, and of atomistic simulations of magnetic domain wall pinning.

Published
2009
Full Text
View/download PDF

48. Comparison of the use of NiFe and CoFe as electrodes for metallic lateral spin valves

Author

C. Vergnaud, P. Laczkowski, G. Zahnd, C. Beigné, Laurent Vila, Matthieu Jamet, Jean-Philippe Attané, T. V. Pham, W. Savero Torres, Alain Marty, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-13-BS10-0005,SOspin,Courants de spin et couple de transfert de spin produits par des effets spin-orbites(2013), and ANR-10-BLAN-1011,SPINHALL,Nouveaux concepts pour l'Effet Hall de Spin et son exploitation en spintronique(2010)

Subjects
Materials science, FOS: Physical sciences, Bioengineering, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Metal, Condensed Matter::Materials Science, 0103 physical sciences, General Materials Science, Electrical and Electronic Engineering, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, ComputingMilieux_MISCELLANEOUS, Condensed Matter - Materials Science, Condensed matter physics, Mechanical Engineering, Materials Science (cond-mat.mtrl-sci), General Chemistry, 021001 nanoscience & nanotechnology, Polarization (waves), Finite element method, 3. Good health, Amplitude, Ferromagnetism, Mechanics of Materials, visual_art, Electrode, visual_art.visual_art_medium, Condensed Matter::Strongly Correlated Electrons, 0210 nano-technology, Spin injection, Order of magnitude
Abstract

Spin injection and detection in Co60Fe40-based all-metallic lateral spin-valves have been studied at both room and low temperatures. The obtained spin signals amplitudes have been compared to that of identical Ni80Fe20-based devices. The replacement of Ni80Fe20 by CoFe allows increasing the spin signal amplitude by up to one order of magnitude, thus reaching 50 m{\Omega} at room temperature. The spin signal dependence with the distance between the ferromagnetic electrodes has been analyzed using both a 1D spin transport model and finite elements method simulations. The enhancement of the spin signal amplitude when using CoFe electrodes can be explained by a higher effective polarization., Comment: 8 pages and 4 figures

Published
2016
Full Text
View/download PDF

49. Spin–Charge Conversion Phenomena in Germanium

Author

Jean-Philippe Attané, Serge Gambarelli, F. Rortais, Matthieu Jamet, Henri Jaffrès, Hanako Okuno, Julie Widiez, Stéphanie Pouget, C. Vergnaud, P. Laczkowski, Simón Oyarzún, Clarisse Ducruet, Juan-Carlos Rojas-Sánchez, Federico Bottegoni, Alain Marty, C. Beigné, J.-M. George, Laurent Vila, Institut Lumière Matière [Villeurbanne] (ILM), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire des Solides Irradiés (LSI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-École polytechnique (X), Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), Centre National de la Recherche Scientifique (CNRS)-THALES, Service Général des Rayons X (SGX ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Conception d’Architectures Moléculaires et Processus Electroniques (CAMPE), SYstèmes Moléculaires et nanoMatériaux pour l’Energie et la Santé (SYMMES), Institut de Chimie du CNRS (INC)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), THALES [France]-Centre National de la Recherche Scientifique (CNRS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
Spin pumping, Materials science, Spin polarization, Condensed matter physics, business.industry, Doping, General Physics and Astronomy, chemistry.chemical_element, Germanium, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Semiconductor, Quantum spin Hall effect, chemistry, 0103 physical sciences, Spin Hall effect, Condensed Matter::Strongly Correlated Electrons, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology, Spin (physics), business, ComputingMilieux_MISCELLANEOUS
Abstract

The spin–orbit coupling relating the electron spin and momentum allows for spin generation, detection and manipulation. It thus fulfils the three basic functions of the spin field-effect-transistor made of semiconductors. In this paper, we review our recent results on spin–charge conversion in bulk germanium and at the Ge(111) surface. We used the spin pumping technique to generate pure spin currents to be injected into bulk germanium and at the Fe/Ge(111) interface. The mechanism for spin–charge conversion in bulk germanium is the spin Hall effect and we could experimentally determine the spin Hall angle θSHE, i.e., the spin–charge conversion efficiency, in heavily doped n-type and p-type germanium. We found very small values at room temperature: θSHE ≈ (1–2) × 10−3 in n-Ge and θSHE ≈ (6–7) × 10−4 in p-Ge. Moreover, we pointed out the essential role of spin dependent scattering on ionized impurities in the spin Hall effect mechanism. We concluded that the spin Hall effect in bulk germanium is too weak to...

Published
2016
Full Text
View/download PDF

50. Electrical spin injection in silicon and the role of defects

Author

F. Rortais, C. Vergnaud, Jean-Philippe Attané, Matthieu Jamet, Henri Jaffrès, Alain Marty, C. Beigné, Julie Widiez, Clarisse Ducruet, J.-M. George, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), CROCUS Technology, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES-Centre National de la Recherche Scientifique (CNRS), ANR-13-BS10-0002,SiGeSPIN,Spintronique dans le silicium et le germanium(2013), and THALES [France]-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Hanle effect, Materials science, Silicon, Condensed matter physics, Magnetoresistance, chemistry.chemical_element, Germanium, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Signal, chemistry, Ferromagnetism, 0103 physical sciences, Condensed Matter::Strongly Correlated Electrons, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology, Quantum tunnelling, Spin-½
Abstract

International audience; Three-terminal devices, where the same ferromagnetic electrode is used for electrical spin injection and detection, is a very easy and powerful tool to probe the spin properties in nonmagnetic materials. For instance, it has been intensively used to study spin injection and detection in silicon. However the interpretation of the magnetoresistance signals observed experimentally is still under debate. In particular, a controversy has been raised about the experimental spin signal which is orders of magnitude larger than the predicted value. Recently, Song et al. [Phys. Rev. Lett. 113, 047205 (2014)] proposed that the magnetoresistance signal measured using the Hanle effect in a three-terminal geometry is due to defects or impurities in the tunnel barrier separating the ferromagnetic electrode from the silicon channel. It has also been supported by the experimental work of Txoperena et al. [Phys. Rev. Lett. 113, 146601 (2014)]. In this study, we perform electrical spin injection/detection measurements using three-terminal devices in different silicon films and study the role of defects. For this purpose, we use the tunneling inelastic spectroscopy to measure the Hanle effect and control the presence of defects in the tunnel barrier. Contrary to previous reports, we demonstrate that defects have no significant contribution to the spin signal. From a comparison with capacitance-voltage measurements in n-doped germanium in which interface states contribute to the spin signal, we also conclude on the presence of interface states in silicon.

Published
2016
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results