1. Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal–Silicon–Metal Vertical Structures
- Author
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Jian Yin Qin, Xiufeng Han, Jean-Georges Mussot, Xavier Devaux, Henri Jaffrès, Piotr Łaczkowski, Sébastien Petit-Watelot, Zhi Liu, Stéphane Mangin, Yuan Lu, Huong Dang, Bu Wen Cheng, Abdelmadjid Anane, Juan-Carlos Rojas-Sánchez, J.-M. George, Jean-Christophe Le Breton, Abdelhak Djeffal, S. Suire, Carolina Cerqueira, Philippe Schieffer, Mathieu Stoffel, Michel Hehn, Sylvie Migot, Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES [France]-Centre National de la Recherche Scientifique (CNRS), Laboratoire des Solides Irradiés (LSI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), University of Chinese Academy of Sciences [Beijing] (UCAS), Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), This work is supported by the joint French National Research Agency (ANR)-National Natural Science Foundation of China (NNSFC) ENSEMBLE project (grant nos. ANR-14-CE26-0028-01 and NNSFC 61411136001), Chinese-French International Key Program, National Natural Science Foundation of China (NSFC grant no. 51620105004) and by the French PIA project 'Lorraine Université d’Excellence' (grant no. ANR-15-IDEX-04-LUE). C.C. acknowledges the support from CNPq, National Council for Scientific and Technological Development-Brazil. A.D. acknowledges PhD funding from Region Lorraine., IMPACT N4S, ANR-15-IDEX-0004,LUE,Isite LUE(2015), THALES-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-École polytechnique (X), Université de Lorraine (UL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes 1 (UR1), and Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Materials science ,Silicon ,Population ,chemistry.chemical_element ,FOS: Physical sciences ,wafer bonding ,Bioengineering ,02 engineering and technology ,Condensed Matter::Materials Science ,Mesoscale and Nanoscale Physics (cond-mat.mes-hall) ,[CHIM]Chemical Sciences ,General Materials Science ,inverse spin Hall effect ,Spin (physics) ,education ,[PHYS]Physics [physics] ,Spin pumping ,education.field_of_study ,Condensed Matter - Materials Science ,spin current ,Condensed matter physics ,Condensed Matter - Mesoscale and Nanoscale Physics ,Mechanical Engineering ,Materials Science (cond-mat.mtrl-sci) ,General Chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,localized electronic states ,Ferromagnetic resonance ,Ferromagnetism ,chemistry ,Spin Hall effect ,Spin diffusion ,Condensed Matter::Strongly Correlated Electrons ,0210 nano-technology - Abstract
International audience; Due to the difficulty of growing high-quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was limited to lateral geometry devices. In this work, by using an ultrahigh-vacuum wafer-bonding technique, we have successfully fabricated metal–semiconductor–metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in the perpendicular current flow geometry over a distance larger than 2 μm in n-type Si at room temperature. In those experiments, a pure propagating spin current is generated via ferromagnetic resonance spin pumping and converted into a measurable voltage by using the inverse spin Hall effect occurring in the top Pt layer. A systematic study varying both Si and MgO thicknesses reveals the important role played by the localized states at the MgO–Si interface for the spin-current generation. Proximity effects involving indirect exchange interactions between the ferromagnet and the MgO–Si interface states appears to be a prerequisite to establishing the necessary out-of-equilibrium spin population in Si under the spin-pumping action.
- Published
- 2019
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