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12 results on '"Jason M. Osheroff"'

1. Compendium of NASA Goddard Space Flight Center’s Recent Radiation Effects Test Results

Author

Martha V. O'bryan, Seth S. Roffe, Edward P. Wilcox, Michael J. Campola, Jason M. Osheroff, Megan C. Casey, Matthew B. Joplin, Thomas A. Carstens, Jonathan D. Barth, Landen D. Ryder, Kaitlyn L. Ryder, Adia M. Wood, Jean-Marie Lauenstein, and Peter J. Majewicz

Subjects
Life Sciences (General)
Abstract

We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to heavy ion and proton induced single-event effects (SEE), proton-induced displacement damage dose (DDD), and total ionizing dose (TID).

Published
2024

2. Compendium of NASA Goddard Space Flight Center’s Recent Radiation Effects Test Results

Author

Martha V. Obryan, Seth S. Roffe, Edward P. Wilcox, Michael J. Campola, Jason M. Osheroff, Megan C. Casey, Matthew B. Joplin, Thomas A. Carstens, Jonathan D. Barth, Landen D. Ryder, Jean-Marie Lauenstein, Adia M. Wood, and Peter J Majewicz

Abstract

We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to heavy ion and proton induced single-event effects (SEE), proton-induced displacement damage dose (DDD), and total ionizing dose (TID).

Published
2024

3. Single Event Effect Testing of the SSDI SFF6661 N-Channel Power MOSFET

Author

Landen D. Ryder, Jason M. Osheroff, Megan C. Casey, and Matthew B. Joplin

Subjects
Electronics and Electrical Engineering
Abstract

This irradiation campaign was performed to evaluate the destructive single event effect (SEE) susceptibility of a n-channel power MOSFET from SSDI for space-based instrumentation. Testing was performed at Michigan State University’s (MSU) Facility for Rate Isotope Beams (FRIB) using an LET of 50.5 MeV·cm2/mg

Published
2023

4. NASA Goddard Space Flight Center’s Current Radiation Effects Test Results

Author

Martha V. O'Bryan, Edward P. Wilcox, Thomas A. Carstens, Kaitlyn L. Ryder, Jonathan D. Barth, Jason M. Osheroff, Landen D. Ryder, Megan C. Casey, Matthew B. Joplin, Jean-Marie Lauenstein, Kenneth A. LaBel, Michael J. Campola, Edward J. Wyrwas, Aubin P. Antonsanti, Melanie D. Berg, Donna J. Cochran, Peter J. Majewicz, and Jonathan A. Pellish

Subjects
Space Processing, Space Radiation
Abstract

We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to heavy ion and proton induced single event effects (SEE), proton-induced displacement damage dose (DDD), and total ionizing dose (TID).

Published
2023

7. Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes

Author

Arijit Sengupta, Dennis R. Ball, Arthur F. Witulski, En Xia Zhang, Ronald D. Schrimpf, Kenneth F. Galloway, Robert A. Reed, Michael L. Alles, Michael W. McCurdy, Andrew L. Sternberg, Robert A. Johnson, Mick E. Howell, Jason M. Osheroff, and John M. Hutson

Subjects
Nuclear and High Energy Physics, Nuclear Energy and Engineering, Electrical and Electronic Engineering
Published
2023
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8. LET and Range Characteristics of Proton Recoil Ions in Gallium Nitride (GaN)

Author

Jason M Osheroff, Jean-Marie Lauenstein, and Raymond L Ladbury

Subjects
Electronics And Electrical Engineering, Physics Of Elementary Particles And Fields
Abstract

A better understanding of the linear energy transfer and the range of proton recoil ions in gallium nitride is necessary to properly evaluate GaN device radiation tolerance. By analyzing the linear energy transfer (LET) and range of recoil heavy ions in GaN we can begin to reproduce the body of knowledge that exists for Si-based devices for this upcoming technology. Although the previous data on older technology has impressive depth and breadth we must be diligent and cautious in the application of these institutional intuitions when applied to emerging technologies such as GaN. As ever increasing materials science advances emerge, a sound methodology for evaluating new technologies must be established in order to apply what we know towards the effort of ensuring radiation tolerance.

Published
2021

9. NASA Goddard Space Flight Center’s Compendium of Radiation Effects Test Results

Author

Alyson D Topper, Jean-Marie Lauenstein, Edward P Wilcox, Melanie D Berg, Michael J Campola, Megan C Casey, Edward J Wyrwas, Martha V O'Bryan, Thomas A Carstens, Caroline M Fedele, James D Forney, Hak S Kim, Jason M Osheroff, Anthony M Phan, Max F Chaiken, Donna J Cochran, Jonathan A Pellish, and Peter J Majewicz

Subjects
Electronics And Electrical Engineering
Abstract

Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FETs, flash memory, FPGAs, optoelectronics, digital, analog, and bipolar devices.

Published
2020

10. NASA Goddard Space Flight Center’s Compendium of Radiation Effects Test Results

Author

Alyson D. Topper, Jean-Marie Lauenstein, Edward P. Wilcox, Melanie D. Berg, Michael J. Campola, Megan C. Casey, Edward J. Wyrwas, Martha V. O’Bryan, Thomas A. Carstens, Caroline M. Fedele, James D. Forney, Hak S. Kim, Jason M. Osheroff, Anthony M. Phan, Max F. Chaiken, Donna J. Cochran, Jonathan A. Pellish, and Peter J. Majewicz

Subjects
Electronics And Electrical Engineering
Abstract

Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FETs, flash memory, FPGAs, optoelectronics, digital, analog, and bipolar devices.

Published
2020

11. LET and Range Characteristics of Proton Recoil Ions in Gallium Nitride (GaN)

Author

Jason M. Osheroff, Jean-Marie Lauenstein, and Ray Ladbury

Subjects
Nuclear and High Energy Physics, Range (particle radiation), Materials science, 010308 nuclear & particles physics, Wide-bandgap semiconductor, Linear energy transfer, Gallium nitride, 01 natural sciences, Engineering physics, Ion, chemistry.chemical_compound, Recoil, Nuclear Energy and Engineering, chemistry, Radiation tolerance, 0103 physical sciences, Electrical and Electronic Engineering, Proton recoil
Abstract

A better understanding of the linear energy transfer (LET) and the range of proton recoil ions in gallium nitride (GaN) is necessary to properly evaluate GaN device radiation tolerance. By analyzing the LET and range of recoil heavy ions in GaN, we can begin to reproduce the body of knowledge that exists for Si-based devices for this upcoming technology. Although the previous data on older technology has impressive depth and breadth, we must be diligent and cautious in the application of these institutional intuitions when applied to emerging technologies such as GaN. As ever increasing materials science advances emerge, a sound methodology for evaluating new technologies must be established in order to apply what we know toward the effort of ensuring radiation tolerance.

Published
2021
Full Text
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12. NASA Goddard Space Flight Center’s Compendium of Radiation Effects Test Results

Author

Alyson D. Topper, Melanie D. Berg, Jonathan A. Pellish, Jean-Marie Lauenstein, James Forney, Edward P. Wilcox, Jason M. Osheroff, Peter J. Majewicz, Anthony M. Phan, Hak Kim, Edward J. Wyrwas, Caroline M. Fedele, Megan C. Casey, Max F. Chaiken, Thomas A. Carstens, Martha V. O'Bryan, Michael J. Campola, and Donna J. Cochran

Subjects
Hardware_MEMORYSTRUCTURES, business.industry, Computer science, Absorbed dose, Electronics, Aerospace engineering, Radiation, business, Field-programmable gate array, Flash memory, Compendium
Abstract

Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FETs, flash memory, FPGAs, optoelectronics, digital, analog, and bipolar devices.

Published
2020
Full Text
View/download PDF

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