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2. Cassini observations of Saturn's southern polar cusp

Author

Arridge, C. S., Jasinski, J. M., Achilleos, N., Bogdanova, Y. V., Bunce, E. J., Cowley, S. W. H., Fazakerley, A. N., Khurana, K. K., Lamy, L., Leisner, J. S., Roussos, E., Russell, C. T., Zarka, P., Coates, A. J., Dougherty, M. K., Jones, G. H., Krimigis, S. M., and Krupp, N.

Subjects
Astrophysics - Earth and Planetary Astrophysics, Physics - Space Physics
Abstract

The magnetospheric cusps are important sites of the coupling of a magnetosphere with the solar wind. The combination of both ground- and space-based observations at Earth have enabled considerable progress to be made in understanding the terrestrial cusp and its role in the coupling of the magnetosphere to the solar wind via the polar magnetosphere. Voyager 2 fully explored Neptune's cusp in 1989 but highly inclined orbits of the Cassini spacecraft at Saturn present the most recent opportunity to repeatedly studying the polar magnetosphere of a rapidly rotating planet. In this paper we discuss observations made by Cassini during two passes through Saturn's southern polar magnetosphere. Our main findings are that i) Cassini directly encounters the southern polar cusp with evidence for the entry of magnetosheath plasma into the cusp via magnetopause reconnection, ii) magnetopause reconnection and entry of plasma into the cusp can occur over a range of solar wind conditions, and iii) double cusp morphologies are consistent with the position of the cusp oscillating in phase with Saturn's global magnetospheric periodicities., Comment: Journal accepted version before copy-editing: 55 pages, 12 figures. Accepted for publication in J. Geophys. Res. Space Physics

Published
2016
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5. Comparative Na and K Mercury and Moon Exospheres

Author

Leblanc, F., Schmidt, C., Mangano, V., Mura, A., Cremonese, G., Raines, J. M., Jasinski, J. M., Sarantos, M., Milillo, A., Killen, R. M., Massetti, S., Cassidy, T., Vervack, Jr., R. J., Kameda, S., Capria, M. T., Horanyi, M., Janches, D., Berezhnoy, A., Christou, A., Hirai, T., Lierle, P., and Morgenthaler, J.

Published
2022
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6. Cassini observations of Saturn's magnetospheric cusp

Author

Jasinski, J. M.

Subjects
523.46
Abstract

The magnetospheric cusp is a funnel-shaped region where shocked solar wind plasma is able to enter the high latitude magnetosphere via the process of magnetic reconnection. The first in-situ analysis of the cusp region at Saturn is presented using data from the Cassini spacecraft, primarily from particle instruments and magnetic field observations. The analysis is presented in three sections. Firstly, two high-latitude spacecraft crossings are confirmed to be cusp observations by: (i) comparing the observed plasma with that of the magnetosheath and the adjacent magnetosphere, (ii) investigating the direction of the observed ions and (iii) analysing the composition of the plasma. The ion observations are shown to be a result of `bursty' reconnection occurring at the dayside magnetopause. The field-aligned distances to the reconnection site are calculated from the observed energy-pitch angle dispersions. Secondly, all the observations of the cusp are presented for the high latitude spacecraft orbits between 2007 and 2013. A comparison of the observations is made as well as classification into groups due to varying characteristics. The locations of the reconnection site are calculated and compared to the literature. The events are also compared to solar wind propagation models to investigate any correlations. Finally, the magnetic field observations of the cusps are analysed, focusing on the diamagnetic depressions. This characteristic is not observed in all of the cusps, and the possible explanations for this are discussed. The data are subtracted from a magnetic field model, and the calculated magnetic pressure deficits are compared to the particle pressures. A high plasma pressure layer in the magnetosphere adjacent to the cusp is discovered to also depress the magnetic field. A summary of the consequences of this work is discussed specifically regarding the ongoing debate of the role of reconnection at Saturn and its influence on magnetospheric dynamics.

Published
2015

12. Relation between structural and optical properties of InN and InxGa1-xN thin films

Author

Liliental-Weber, Z., Zakharov, D.N., Jasinski, J., Yu, K.M., Wu, J.W., Ager III, J.W., Walukiewicz, W., Haller, E.E., Lu, H., Li, S.X., and Schaff, W.J.

Subjects
Condensed matter physics, superconductivity and superfluidity, InN InGaN structural and optical properties
Abstract

Transmission Electron Microscopy (TEM) and optical measurements obtained from InN and In1-xGaxNfilms (0 < x < 0.54) grown by Molecular Beam Epitaxy are presented. Energy gaps measured byabsorption, PR, and PL for InN films grown on c-plane Al2O3 were in the range of 0.7 eV. No In or otherinclusions were observed in these films, ruling out the possibility of a strong Mie scattering mechanism. Inthe In1-xGaxN films the relationship between the structural properties and the optical properties, inparticular the presence or absence of a Stokes shift between absorption and PL, is discussed. TEM studiesshow that high quality layers do not have a Stokes shift. Some films had compositional ordering; thesefilms also showed a shift between absorption edge and luminescence peak.

Published
2008

15. V-shaped inversion domains in InN grown on c-plane sapphire

Author

Jasinski, J., Liliental-Weber, Z., Lu, H., and Schaff, W.J.

Abstract

Inversion domains with a V-shape were found to nucleate inside a Mg-doped InN heteroepitaxial layer. They resemble Al-polarity domains, observed recently, in N-polarity AlN films. However, the angle between the side-walls of the V-shaped domain and the c-axis differs in these two cases. In InN, this angle is almost two times bigger than that reported for AlN. The origin of V-shaped inversion domains in InN film is not yet clear.

Published
2004

16. Atomic structure of defects in GaN:Mg grown with Ga polarity

Author

Liliental-Weber, Z., Tomaszewicz, T., Zakharov, D., Jasinski, J., O'Keefe, M.A., Hautakangas, S., Laakso, A., and Saarinen, K.

Subjects
Condensed matter physics, superconductivity and superfluidity, Condensed matter physics, superconductivity and superfluidity
Published
2003

20. Crystal structure of kappa-In2Se3

Author

Jasinski, J., Swider, W., Washburn, J., Liliental-Weber, Z., Chaiken, A., Nauka, K., Gibson, G.A., and Yang, C.C.

Subjects
Materials science
Published
2002

27. Transparent ZnO-based ohmic contact to p-GaN

Author

Kaminska, E., Piotrowska, A., Golaszewska, K., Guziewicz, M., Kruszka, R., Kudla, A., Ochalski, T., Barcz, A., Dietl, T., Matsukura, F., Sawicki, M., Wawro, A., Zielinski, M., Jasinski, J., and Liliental-Weber, Z.

Subjects
Materials science
Published
2002

39. Post-growth thermal treatment of the InAs/GaAs quantum dots

Author

Jasinski, J., Babinski, A., Bozek, R., and Baranowski, J.M.

Subjects
Materials science, InAs/GaAs quantum dots wetting layer annealing interdiffusion
Abstract

The effect of post-growth thermal treatment of the InAs/GaAs quantum dots is investigated in this work. The photoluminescence (PL) and transmission electron microscopy (TEM) studies of samples annealed at temperatures up to 950 degrees C are presented. A complete dissolution of QDs and substantial broadening of the wetting layer (WL) can be seen from TEM. We propose that the thermally induced modification of the WL rather than QDs can be responsible for a blue-shift and narrowing of PL peaks in structures containing InAs/GaAs QDs.

Published
2000

40. Influence of Mg and In on defect formation in GaN; bulk and MOCVD grown samples

Author

Liliental-Weber, Z., Benamara, M., Jasinski, J., Swider, W., Washburn, J., Grzegory, I., Porowski, S., Bak-Misiuk, J., Domagala, J., Bedair, S., Eiting, C.J., and Dupuis, R.D.

Subjects
Materials science
Abstract

Transmission electron microscopy studies were applied to study GaN crystals doped with Mg. Both: bulk GaN:Mg crystals grown by a high pressure and high temperature process and those grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. Structural dependence on growth polarity was observed in the bulk crystals. Spontaneous ordering (formation of polytypoids) was observed for growth in the N to Ga polar direction (N polarity). On the opposite site of the crystal (growth in the Ga to N polar direction) Mg-rich pyramidal defects with base on the basal planes and with walls inclined about 45O to these planes, empty inside (pinholes) were observed. A high concentration of these pyramidal defects was also observed in the MOCVD grown crystals. For samples grown with Mg delta doping planar defects were also observed especially at the early stages of growth followed by formation of pyramidal defects. TEM and x-ray studies of InxGa1-xN crystals for the range of 28-45 percent nominal In concentration shows formation of two sub-layers: strained and relaxed, with a much lower In concentration in the strained layer. Layers with the highest In concentration were fully relaxed.

Published
2000

41. InGaAs/GaAs quantum dot interdiffusion induced by cap layer overgrowt h

Author

Jasinski, J., Babinski, A., Czeczott, M., and Bozek, R.

Subjects
Materials science, quantum dost InGaAs/GaAs interdiffiusion
Abstract

The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

Published
2000

42. Microstructure and thermal stability of transition metal nitrides and borides on GaN

Author

Jasinski, J., Kaminska, E., Piotrowska, A., Barcz, A., and Zielinski, M.

Subjects
Materials science, GaN nitrides borides microstructure stability
Abstract

Microstructure and thermal stability of ZrN/ZrB2 bilayer deposited on GaN have been studied using transmission electron microscopy methods (TEM) and secondary ion mass spectrometry (SIMS). It has been demonstrated that annealing of the contact structure at 11000C in N2 atmosphere does not lead to any observable metal/ semiconductor interaction. In contrast, a failure of the integrity of ZrN/ZrB2 metallization at 8000C, when the heat treatment is performed in O2 ambient has been observed.

Published
2000

49. Spatial Modulation of Vibrational and Luminescence Properties of Monolayer MoS2 Using a GaAs Nanowire Array

Author

Balgarkashi, A., Piazza, V., Jasinski, J., Frisenda, R., Surrente, A., Baranowski, M., Dimitrievska, M., Dede, D., Kim, W., Guniat, L., Leran, J., Castellanos-Gomez, A., Plochocka, P., and Morral, A. F. I.

Subjects
Gallium arsenide, nanowires, Substrates, Optical sensors, Raman spectroscopy, transition-metal dichalcogenides, Optical imaging, photoluminescence, Scanning electron microscopy, Spectroscopy, Strain
Published
2022

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