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Quantum wells (QWs) based on mercury telluride (HgTe) thin films provide a large scale of unusual physical properties starting from an insulator via a two-dimensional Dirac semimetal to a three-dimensional topological insulator. These properties result from the dramatic change of the QW band structure with the HgTe film thickness. Although being a key property, these energy dispersion relations cannot be reflected in experiments due to the lack of appropriate tools. Here we report an experimental and theoretical study of two HgTe quantum wells with inverted energy spectrum in which two-dimensional semimetallic states are realized. Using magneto-optical spectroscopy at sub-THz frequencies we were able to obtain information about electron and hole cyclotron masses at all relevant Fermi level positions and different charge densities. The outcome is also supported by a Shubnikov-de Haas analysis of capacitance measurements, which allows obtaining information about the degeneracy of the active modes. From these data, it is possible to reconstruct electron and hole dispersion relations. Detailed comparative analysis of the energy dispersion relations with theoretical calculations demonstrates a good agreement, reflecting even several subtle features like band splitting, the second conduction band, and the overlaps between the first conduction and first valence band. Our study demonstrates that the cyclotron resonance experiments can be efficiently used to directly obtain the band structures of semimetallic 2D materials., 8 pages, 5 figures

We report the discovery of "superluminal" electromagnetic 2D plasma waves in the electromagnetic response of a high-quality GaAs/AlGaAs two-dimensional electron system on a dielectric substrate. We measure the plasma wave spectrum on samples with different electron density. It is established that at large two-dimensional densities, there is a strong hybridization between the plasma and the Fabry-Perot light modes. In the presence of a perpendicular magnetic field, the plasma resonance is shown to split into two modes, each corresponding to a particular sense of circular polarization.

We report the experimental discovery of ``superluminal'' electromagnetic 2D plasma waves in the electromagnetic response of a high-quality $\mathrm{GaAs}/\mathrm{AlGaAs}$ two-dimensional electron system on a dielectric substrate. We measure the plasma wave spectrum on samples with different electron density. It is established that, at large two-dimensional densities, there is a strong hybridization between the plasma and the Fabry-Perot light modes. In the presence of a perpendicular magnetic field, the plasma resonance is shown to split into two modes, each corresponding to a particular sense of circular polarization. Experimental results are found to be in good agreement with the theory.

From the analysis of the cyclotron resonance, we experimentally obtain the band structure of the three-dimensional topological insulator based on a HgTe thin film. Top gating was used to shift the Fermi level in the film, allowing us to detect separate resonance modes corresponding to the surface states at two opposite film interfaces, the bulk conduction band, and the valence band. The experimental band structure agrees reasonably well with the predictions of the $\mathbf{k}\ifmmode\cdot\else\textperiodcentered\fi{}\mathbf{p}$ model. Due to the strong hybridization of the surface and bulk bands, the dispersion of the surface states is close to parabolic in the broad range of the electron energies.

We investigate the superradiance effects in three-dimensional topological insulator HgTe with conducting surface states. We demonstrate that the superradiance can be explained using the classical electrodynamic approach. Experiments using the continuous-wave spectroscopy allowed us to separate the energy losses in the system into intrinsic and radiation losses, respectively. These results demonstrate that the superradiance effects are not sensitive to the details of the band structure of the material.

The functionality of computer memory elements is currently based on multi-stability, driven either by locally manipulating the density of electrons in transistors or by switching magnetic or ferroelectric order. Another possibility is switching between metallic and insulating phases by the motion of ions, but their speed is limited by slow nucleation and inhomogeneous percolative growth. Here we demonstrate fast resistance switching in a charge density wave system caused by pulsed current injection. As a charge pulse travels through the material, it converts a commensurately ordered polaronic Mott insulating state in 1T–TaS2 to a metastable electronic state with textured domain walls, accompanied with a conversion of polarons to band states, and concurrent rapid switching from an insulator to a metal. The large resistance change, high switching speed (30 ps) and ultralow energy per bit opens the way to new concepts in non-volatile memory devices manipulating all-electronic states., The control of a material's state via external stimuli is the basis of modern information storage technology. Here, the authors use pulsed currents to induce fast switching between Mott insulator and metallic states in the charge density wave system 1T-TaS2, presenting an all-electronic storage mechanism.

The advancement of 3D-printing opens up a new way of constructing affordable custom terahertz (THz) components due to suitable printing resolution and THz transparency of polymer materials. We present a way of calculating, designing and fabricating a THz waveplate that phase-modulates an incident THz beam ({\lambda}=2.14 mm) in order to create a predefined intensity profile of the optical wavefront on a distant image plane. Our calculations were performed for two distinct target intensities with the use of a modified Gerchberg-Saxton algorithm. The resulting phase-modulating profiles were used to model the polyactide elements, which were printed out with a commercially available 3D-printer. The results were tested in an THz experimental setup equipped with a scanning option and they showed good agreement with theoretical predictions., Comment: 4 pages, 3 figures

Revealing the relaxation mechanisms of hidden states in transition metal dichalcogenides leads to control of metastability., Controllable switching between metastable macroscopic quantum states under nonequilibrium conditions induced either by light or with an external electric field is rapidly becoming of great fundamental interest. We investigate the relaxation properties of a “hidden” (H) charge density wave (CDW) state in thin single crystals of the layered dichalcogenide 1T-TaS2, which can be reached by either a single 35-fs optical laser pulse or an ~30-ps electrical pulse. From measurements of the temperature dependence of the resistivity under different excitation conditions, we find that the metallic H state relaxes to the insulating Mott ground state through a sequence of intermediate metastable states via discrete jumps over a “Devil’s staircase.” In between the discrete steps, an underlying glassy relaxation process is observed, which arises because of reciprocal-space commensurability frustration between the CDW and the underlying lattice. We show that the metastable state relaxation rate may be externally stabilized by substrate strain, thus opening the way to the design of nonvolatile ultrafast high-temperature memory devices based on switching between CDW states with large intrinsic differences in electrical resistance.

Controllable switching to and from metastable states of matter using electromagnetic fields could potentially revolutionize electronic logic and memory devices. Here, we investigate the effect of two-dimensional strain on switching between a photoinduced "hidden" state and a stable charge-ordered state in ultrathin 1T-TaS2 crystal films on different substrates, photoexcited by 35 fs laser pulses. The differential contraction of the sample and the substrate shows a very large and negative strain coefficient on the hidden state transition, implying that the stability of the hidden state could be markedly increased by tensile strain. Other transitions are not strongly affected by tensile strain.