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Recently, perovskite (PV) oxides with ABO

The hybrid gate-recessed structure and ferroelectric charge trapping/storage stacked structure were used in AlGaN/GaN enhancement-mode metal–oxide–semiconductor high-electron mobility transistors (E-MOSHEMTs). The stacked structure consisted of a bottom 10-nm-thick Al2O3 tunnel oxide layer, a middle 4-nm-thick HfO2 charge trapping/storage layer, and a top 40-nm-thick LiNbO3 ferroelectric blocking layer. Using the postannealing process, a high polarized C+ domain of the pulsed laser-deposited LiNbO3 ferroelectric blocking layer was formed and the interface quality of the stacked structure was improved simultaneously. Consequently, positive threshold voltage for enhancement-mode operation was obtained. By studying the performances of the resulting devices, it was found that enhancement-mode behaviors were observed for initializing gate more than 5 V, and the threshold voltage of 1.6 V was obtained for initializing gate at 12 V. The high-frequency performances of the extrinsic unit gain cutoff frequency of 5.9 GHz and maximum oscillation frequency of 10.1 GHz were obtained. Furthermore, a low normalized noise power density of about $1.9\times 10^{-14}$ Hz−1 was achieved for the devices operating at a frequency of 10 Hz, a gate–source voltage of 5 V, and a drain–source voltage of 1 V.

Researchers have long been seeking multifunctional materials that can be adopted for next-generation nanoelectronics, and which, hopefully, are compatible with current semiconductor processing for further integration. Along this vein, complex oxides have gained numerous attention due to their versatile functionalities. Despite the fact that unbounded potential of complex oxides has been examined over the past years, one of the major challenges lies in the direct integration of these functional oxides onto existing devices or targeted substrates that are inherently incompatible in terms of oxide growth. To fulfill this goal, freestanding processes have been proposed, in which wet etching of inserted sacrificial layers is regarded as one of the most efficient ways to obtain epitaxial high-quality thin films. In this study, we propose using an alternative oxide, YBa2Cu3O7 (YCBO), as a sacrificial layer, which can be easily dissolved in light hydrochloric acid in a more efficient way, while protecting selected complex oxides intact. The high epitaxial quality of the selected complex oxide before and after freestanding process using YBCO as a sacrificial layer is comprehensively studied via a combination of atomic force microscopy, X-ray diffraction, transmission electron microscopy, and electrical transports. This approach enables direct integration of complex oxides with arbitrary substrates and devices and is expected to offer a faster route towards the development of low-dimensional quantum materials.

Antiferromagnetic spintronics is an emerging field of non-volatile data storage and information processing. The zero net magnetization and zero stray fields of antiferromagnetic materials eliminate interference between neighbor units, leading to high-density memory integrations. However, this invisible magnetic character at the same time also poses a great challenge in controlling and detecting magnetic states in antiferromagnets. Here, two antiferromagnetic spin states close in energy in strained BiFeO

Multiferroic materials have shown significant potential for next generation nanoelectronic and multifunctional devices due to their coexistent order parameters and versatile tunabilities. Nevertheless, the selectivity of the room temperature multiferroics is extremely limited. In this manner, single-phase solid-solution-type multiferroics that are composed by distinct oxides exhibiting either ferroelectricity or ferromagnetism individually have offered an alternative route toward the advancement of room temperature multiferroic systems. In this work, single crystalline lead iron tantalate lead zirconate titanate (PZTFT) thin films have been investigated for broadening the advancement of room temperature solid-solution multiferroics. The PZTFT thin films have been grown by pulsed laser deposition, while the ferroelectric and ferromagnetic properties are revealed by a combination of scanning probe microscopy and synchrotron-based X-ray absorption spectroscopy. Our results have further revealed remarkable fatigue and retention behaviors of PZTFT thin film, suggesting its potent role for practical applications. (Less)

The modern studies of complex oxides have been mainly driven by the development of advanced growth and characterization techniques, which provide researchers unprecedented access to new insights and functionalities of these materials. Epitaxial growth of thin films and related architectures offers a pathway to the discovery and stabilization of a wide spectrum of new possibilities in conjunction with the availability of high quality materials that produced with larger lateral sizes and being grown constrainedly. Compared with conventional growth techniques, such as sputtering, spin coating, sol–gel processes, metal-organic chemical vapor deposition, molecular beam epitaxy and so on, no other single advance in the creation of oxide materials has had as pronounced an impact as pulsed laser deposition. In pursuit of the fruitful functionalities and exciting physical phenomena among complex oxides, pulsed laser deposition technique has played an important role to fulfill the flurry of complex oxides in recent decades. In this article, we focus on the details of the growth of epitaxial oxide thin films and the related polymorphs, as well as recent advances in control of the oxide heteroepitaxy via pulsed laser deposition.

Controlling ferroic orders (ferroelectricity, ferromagnetism and ferroelasticity) by optical methods is a significant challenge due to the large mismatch in energy scales between the order parameter coupling strengths and the incident photons. Here, we demonstrate an approach to manipulate multiple ferroic orders in an epitaxial mixed-phase BiFeO3 thin film at ambient temperature via laser illumination. Phase-field simulations indicate that a light-driven flexoelectric effect allows the targeted formation of ordered domains. We also achieved precise sequential laser writing and erasure of different domain patterns, which demonstrates a deterministic optical control of multiferroicity at room temperature. As ferroic orders directly influence susceptibility and conductivity in complex materials, our results not only shed light on the optical control of multiple functionalities, but also suggest possible developments for optoelectronics and related applications.

Epitaxial growth is of significant importance over the past decades, given it has been the key process of modern technology for delivering high-quality thin films. For conventional heteroepitaxy, the selection of proper single crystal substrates not only facilitates the integration of different materials but also fulfills interface and strain engineering upon a wide spectrum of functionalities. Nevertheless, the lattice structures, regularity and crystalline orientation are determined once a specific substrate is chosen. In this work, we reveal the growth of twisted oxide lateral homostructures with multiple conjunction degree of freedom. The twisted lateral homostructures with atomically sharp interfaces can be composed of epitaxial “blocks” with different crystalline orientations, ferroic orders and phases. We further demonstrate that this approach is universal for fabricating various complex systems. Our results establish an efficient pathway towards twisted lateral homostructures, allowing epitaxial films to be arbitrarily tailored at designated positions with unbounded in-plane conjunction tunability.

Multiferroics-materials that exhibit coupled ferroic orders-are considered to be one of the most promising candidate material systems for next-generation spintronics, memory, low-power nanoelectronics and so on. To advance potential applications, approaches that lead to persistent and extremely fast functional property changes are in demand. Herein, it is revealed that the phase transition and the correlated ferroic orders in multiferroic BiFeO

Epitaxial BiFeO3 film shows excellent ferroelectric properties, which is not only studied extensively in magnetoelectric modulation but also shows good tribological performance. In our experiment, we find that the surface of BiFeO3 film can be more lubricant with the application of bias voltages or stress through the AFM probe with a reduction (up to ∼40%) of the friction between the sample and the probe tip. Based on the Prandtl-Tomlinson model, the mechanism of the dry lubrication on BiFeO3 film originates from the reduction of van der Waals force between sample surface and probe tip. The findings here could be advantageously used in promoting the performance and durability of Micro/Nano Electromechanical devices based on ferroelectric thin films.

Interest in bringing p- and n-type monolayer semiconducting transition metal dichalcogenides (TMD) into contact to form rectifying pn diode has thrived since it is crucial to control the electrical properties in two-dimensional (2D) electronic and optoelectronic devices. Usually this involves vertically stacking different TMDs with pn heterojunction or, laterally manipulating carrier density by gate biasing. Here, by utilizing a locally reversed ferroelectric polarization, we laterally manipulate the carrier density and created a WSe2 pn homojunction on the supporting ferroelectric BiFeO3 substrate. This non-volatile WSe2 pn homojunction is demonstrated with optical and scanning probe methods and scanning photoelectron micro-spectroscopy. A homo-interface is a direct manifestation of our WSe2 pn diode, which can be quantitatively understood as a clear rectifying behavior. The non-volatile confinement of carriers and associated gate-free pn homojunction can be an addition to the 2D electron–photon toolbox and pave the way to develop laterally 2D electronics and photonics. Bringing together p- and n-type monolayers of semiconducting transition metal dichalcogenides results in the formation of atomically thin pn junctions. Here, the authors laterally manipulate carrier density to create a WSe2 pn homojunction on a supporting ferroelectric BiFeO3 substrate.

Ferroelectric domain walls have continued to attract widespread attention due to both the novelty of the phenomena observed and the ability to reliably pattern them in nanoscale dimensions. However, the conductivity mechanisms remain in debate, particularly around nominally uncharged walls. Here, we posit a conduction mechanism relying on field-modification effect from polarization re-orientation and the structure of the reverse-domain nucleus. Through conductive atomic force microscopy measurements on an ultra-thin (001) BiFeO3 thin film, in combination with phase-field simulations, we show that the field-induced twisted domain nucleus formed at domain walls results in local-field enhancement around the region of the atomic force microscope tip. In conjunction with slight barrier lowering, these two effects are sufficient to explain the observed emission current distribution. These results suggest that different electronic properties at domain walls are not necessary to observe localized enhancement in domain wall currents., Understanding the conductivity at the nominally uncharged domain walls in ferroelectrics is still far from complete. Here the authors report an enhanced conduction at domain walls in an ultra-thin (001) BiFeO3 film resulting from the formation of a field-induced meta-stable twisted domain nucleus.

Ferroelectric vortex in multiferroic materials has been considered as a promising alternative to current memory cells for the merit of high storage density. However, the formation of regular natural ferroelectric vortex is difficult, restricting the achievement of vortex memory device. Here, we demonstrated the creation of ferroelectric vortex-antivortex pairs in BiFeO3 thin films by using local electric field. The evolution of the polar vortex structure is studied by piezoresponse force microscopy at nanoscale. The results reveal that the patterns and stability of vortex structures are sensitive to the poling position. Consecutive writing and erasing processes cause no influence on the original domain configuration. The Z4 proper coloring vortex-antivortex network is then analyzed by graph theory, which verifies the rationality of artificial vortex-antivortex pairs. This study paves a foundation for artificial regulation of vortex, which provides a possible pathway for the design and realization of non-volatile vortex memory devices and logical devices. A demonstration of electrically-rewritable vortex pairs in a ferroelectric could provide a route to realizing vortex memory devices. Swirling vortex structures of electrical polarization that are relatively insensitive to external disturbances can form in ferroelectric materials. As they can exist in different polarization states, vortices could be exploited for information storage applications, but practical methods to manufacture and manipulate them are required first. Using scanning probe microscopy-based methods, an international team of researchers led by Xiaomei Lu from Nanjing University demonstrate that ferroelectric vortex-antivortex pairs can be created and erased in bismuth ferrite films using local electric fields. They also show that large-scale vortex networks can be created, which could bring the use of vortices in electronic devices a step closer.

The ability to switch the ferroelectric polarization using an electric field makes ferroelectrics attractive for application in nanodevices such as high-density memories. One of the major challenges impeding this application, however, has been known as “retention failure”, which is a spontaneous process of polarization back-switching that can lead to data loss. This process is generally thought to be caused by the domain instability arising from interface boundary conditions and countered by defects, which can pin the domain wall and impede the back-switching. Here, using in situ transmission electron microscopy and atomic-scale scanning transmission electron microscopy, we show that the polarization retention failure can be induced by commonly observed nanoscale impurity defects in BiFeO3 thin films. The interaction between polarization and the defects can also lead to the stabilization of novel functional nanodomains with mixed-phase structures and head-to-head polarization configurations. Thus, defect ...

Mesocrystal-a new class of crystals compared with conventional single crystals and randomly distributed nanocrystal systems-has captured significant attention in recent decades. Current studies have been focused on the advanced synthesis as well as the intriguing properties of mesocrystal. In order to create new opportunities upon functional mesocrystals, they can be regarded as a new functional entirety when integrated with unique matrix environments. The elegant combination of mesocrystals and matrices has enabled researchers to realize enthralling tunabilities and to derive new functionalities that cannot be found in individual components. Therefore, mesocrystal-embedded system forms a new playground towards multifunctionalities. This review article delivers a general roadmap that portrays the enhancement of intrinsic properties and new functionalities driven by novel mesocrystal-embedded oxide systems. An in-depth understanding and breakthroughs achieved in mesocrystal-embedded oxide systems are highlighted. This article concludes with a brief discussion on potential directions and perspectives along this research field.

Benefiting from the advances made in well-controlled materials synthesis techniques, nanocomposites have drawn considerable attention due to their enthralling physics and functionalities. In this work, we report a new heteroepitaxial mesocrystal-perovskite nanocomposite, (NiFe2O4)0.33:(La0.67Ca0.33MnO3)0.67. Elaborate structural studies revealed that tiny NiFe2O4 nanocrystals aggregate into ordered octahedral mesocrystal arrays with {111} facets together with a concomitant structural phase transition of the La0.67Ca0.33MnO3 matrix upon postannealing process. Combined magnetic and X-ray absorption spectroscopic measurements show significant enhancement in the magnetic properties at room temperature due to the structural evolution of magnetic NiFe2O4 and the consequent magnetic coupling at the heterointerfaces mediating via well connected octahedrons of Mn-O6 in La0.67Ca0.33MnO3 and (Ni,Fe)-O6 in NiFe2O4. This work demonstrates an approach to manipulate the exciting physical properties of material systems by integrating desired functionalities of the constituents via synthesis of a self-assembled mesocrystal embedded nanocomposite system.

Photostriction, optical stimulus driven mechanical deformation in materials, provides a solution toward next-generation technology. Here, the giant photostriction (∼2% change of lattice) of epitaxial strontium iridate (SrIrO3) films under illumination at room temperature is revealed via power-dependent Raman scattering, which is significantly larger as compared to conventional inorganic materials. The time scale and mechanism of this giant photostriction in SrIrO3 are further studied through time-resolved transient reflectivity measurements. The main mechanism is determined to be the electron-phonon coupling. In addition, we find that such an exotic behavior happens within few picoseconds and remains up to 107 cyclic on/off operations. The observation of giant photostriction in SrIrO3 films with superior endurance promises the advance of shape responsive solids that are sensitive to environmental stimuli, which could be widely utilized for multifunctional optoelectronics and optomechanical devices.

Controlling ferroic orders (ferroelectricity, ferromagnetism and ferroelasticity) by optical methods is a significant challenge due to the large mismatch in energy scales between the order parameter coupling strengths and the incident photons. Here, we demonstrate an approach to manipulate multiple ferroic orders in an epitaxial mixed-phase BiFeO

Magnetic refrigeration, resulting from the magnetocaloric effect of a material around the magnetic phase-transition temperature, is a topic of great interest as it is considered to be an alternate energy solution to conventional vapor-compression refrigeration. The viability of a magnetic refrigeration system for magnetic cooling can be tested by exploiting materials in various forms, from bulk to nanostrucutres. In this study, magnetocaloric properties of self-assembled Mn3O4-La(0.7)Sr(0.3)MnO3 nanocomposites, with varying doping concentrations of Mn3O4 in the form of nanocrystals embedded in the La(0.7)Sr(0.3)MnO3 matrix, are investigated. The temperatures corresponding to the paramagnetic-to-ferromagnetic transitions are higher, and the values of change in magnetic entropy under a magnetic field of 2 T show an enhancement (highest being ∼130%) for the nanocomposites with low doping concentrations of Mn3O4, compared to that of pure La(0.7)Sr(0.3)MnO3 thin films. Relative cooling power remain close to those of La(0.7)Sr(0.3)MnO3. The enhanced magnetic phase-transition temperature and magnetocaloric effect are interpreted and evidenced in the framework of interfacial coupling between Mn3O4 and La(0.7)Sr(0.3)MnO3. This work demonstrates the potentiality of self-assembled nanostructures for magnetic cooling near room temperature under low magnetic fields.

Colorectal carcinoma (CRC) is known as the most common cancer. MicroRNAs (miRNAs) have been proven to have important roles in human carcinogenesis by regulating various target genes. Recently, the downregulation of miR-582-5p had been demonstrated in CRC. However, its function and the underlying mechanism in CRC remains unknown. In this study, we found that miR-582-5p was frequently downregulated in CRC tissues compared with corresponding noncancerous tissues, as well as in CRC cell lines. Transfection with miR-582-5p mimics significantly inhibited CRC cell proliferation, invasion and arrested cell cycle at the G1/S phase, but promoted cell apoptosis. Further analysis demonstrated that miR-582-5p attenuated the expression of RAS-related GTP-binding protein (Rab27a). Luciferase reporter assay confirmed that Rab27a was a target of miR-582-5p. Mechanism analyses revealed that Rab27a overexpression significantly attenuated the inhibitory effect of miR-582-5p on CRC cell growth, invasion and cell cycle progression. Our data suggest that miR-582-5p may function as a tumor suppressor in the development of CRC by targeting Rab27a, indicating a novel therapeutic strategy for patients with CRC.

A promising approach to the next generation of low-power, functional, and green nanoelectronics relies on advances in the electric-field control of lattice, charge, orbital, and spin degrees of freedom in novel materials. The possibility of electric-field control of these multiple materials functionalities offers interesting options across a range of modern technologies, including information communication, computing processes, data storage, active components, and functional electronics. This article reviews electric-field control and modulation of various degrees of freedom through the medium of multiferroic BiFeO3. Coexisting order parameters and inherent couplings in this materials system form a potent playground, enabling direct and indirect manipulation to obtain intriguing properties and functionalities with an electric stimulus. An in-depth understanding of those electrically controlled phenomena and breakthroughs is highlighted, paving a new route toward multifunctional nanoelectronics. This article concludes with a brief discussion on foreseeable challenges as well as future directions.

Interest in bringing p- and n-type monolayer semiconducting transition metal dichalcogenides (TMD) into contact to form rectifying pn diode has thrived since it is crucial to control the electrical properties in two-dimensional (2D) electronic and optoelectronic devices. Usually this involves vertically stacking different TMDs with pn heterojunction or, laterally manipulating carrier density by gate biasing. Here, by utilizing a locally reversed ferroelectric polarization, we laterally manipulate the carrier density and created a WSe2 pn homojunction on the supporting ferroelectric BiFeO3 substrate. This non-volatile WSe2 pn homojunction is demonstrated with optical and scanning probe methods and scanning photoelectron micro-spectroscopy. A homo-interface is a direct manifestation of our WSe2 pn diode, which can be quantitatively understood as a clear rectifying behavior. The non-volatile confinement of carriers and associated gate-free pn homojunction can be an addition to the 2D electron–photon toolbox and pave the way to develop laterally 2D electronics and photonics., Bringing together p- and n-type monolayers of semiconducting transition metal dichalcogenides results in the formation of atomically thin pn junctions. Here, the authors laterally manipulate carrier density to create a WSe2 pn homojunction on a supporting ferroelectric BiFeO3 substrate.

Mesocrystal, a new class of crystals as compared to conventional and well-known single crystals and polycrystalline systems, has captured significant attention in the past decade. Recent studies have been focused on the advance of synthesis mechanisms as well as the potential on device applications. In order to create further opportunities upon functional mesocrystals, we fabricated a self-assembled nanocomposite composed of magnetic CoFe2O4 mesocrystal in Sr-doped manganites. This combination exhibits intriguing structural and magnetic tunabilities. Furthermore, the antiferromagnetic coupling of the mesocrystal and matrix has induced an additional magnetic perturbation to spin-polarized electrons, resulting in a significantly enhanced magnetoresistance in the nanocomposite. Our work demonstrates a new thought toward the enhancement of intrinsic functionalities assisted by mesocrystals and advanced design of novel mesocrystal-embedded nanocomposites.

The control of magnetism via an electric field has attracted substantial attention because of potential applications in magnetoelectronics, spintronics and high-frequency devices. In this study, we demonstrate a new approach to enhance and control the magnetization of multiferroic thin film by an electric stimulus. First, to reduce the strength of the antiferromagnetic superexchange interaction in BiFeO3, we applied strain engineering to stabilize a highly strained phase. Second, the direction of the ferroelectric polarization was controlled by an electric field to enhance the Dzyaloshinskii–Moriya interaction in the highly strained BiFeO3 phase. Because of the magnetoelectric coupling in BiFeO3, a strong correlation between the modulated ferroelectricity and enhanced magnetization was observed. The tunability of this strong correlation by an electric field provides an intriguing route to control ferromagnetism in a single-phase multiferroic.

A new paradigm of domain wall nanoelectronics has emerged recently, in which the domain wall in a ferroic is itself an active device element. The ability to spatially modulate the ferroic order parameter within a single domain wall allows the physical properties to be tailored at will and hence opens vastly unexplored device possibilities. Here, we demonstrate via ambient and ultrahigh-vacuum (UHV) scanning probe microscopy (SPM) measurements in bismuth ferrite that the conductivity of the domain walls can be modulated by up to 500% in the spatial dimension as a function of domain wall curvature. Landau-Ginzburg-Devonshire calculations reveal the conduction is a result of carriers or vacancies migrating to neutralize the charge at the formed interface. Phase-field modeling indicates that anisotropic potential distributions can occur even for initially uncharged walls, from polarization dynamics mediated by elastic effects. These results are the first proof of concept for modulation of charge as a function of domain wall geometry by a proximal probe, thereby expanding potential applications for oxide ferroics in future nanoscale electronics.

The ultrafast dynamics in (100)-oriented BiFeO3 thin films were studied from 20 K to 300 K by using the dual-color femtosecond pump-probe spectroscopy, which were performed by the 400 nm (3.1 eV) pump pulses above the energy gap of 2.67 eV and the 800 nm (1.55 eV) probe pulses below the energy gap of 2.67 eV. From the temperature-dependent transient reflectivity changes (ΔR/R), the anomalous changes were clearly observed below 200 K caused by magnons. Thus, the femtosecond pump-probe spectroscopy could unambiguously reveal the magnetization dynamics in BiFeO3 with strong magnetoelectric coupling.

The ferroelastic strain coupling in multiferroic heterostructures is explored aiming at novel physical effects and fascinating functionality. Ferroelastic domain walls in manganites induced by a stripe BiFeO3 template can modulate the electronic transfer and sufficiently block the magnetic ordering, creating a vast anisotropy. The findings suggest the great importance of ferroelastic strain engineering in material modifications.

Multiferroic depicts matters in which two or more ferroic order parameters (ferroelectric, antiferromagnetic, and ferroelastic) coexist. The coexistent ferroic orders and the coupling enable multiferroics to show intriguing physical phenomena and to possess promising potentials for next-generation nanoelectronics. More recently, a number of fascinating phenomena as well as promising exploration of new device heterostructures based on multiferroic thin films have been carried out, lighting up the opportunity toward multifunctional devices and electronics. In this article, fundamental characteristics, coexistence of ferroic order parameters, and corresponding couplings will be disclosed. Furthermore, convectional types as well as promising applications of multiferriocs thin films will also be recaptured. Keywords: Multiferroics; complex oxide; magnetoelectronic; nanoelectronics; thin film

Intriguing functionalities at nano-sized domain walls have recently spawned a new paradigm for developing novel nanoelectronics due to versatile characteristics. In this study, we explore a new scenario to modulate the local conduction of ferroic domain walls. Three controlling parameters, i.e., external electrical field, magnetic field and light, are introduced to the 90° domain walls (90° DWs) of BiFeO3. Electrical modulation is realized by electrical transport, where the mobility of 90° DWs can be altered by gating voltage. We further use the ferromagnetic/antiferromagnetic coupling to reveal the inherent magnetism at the DWs. With an established magnetic nature, magnetotransport has been conducted to introduce magnetic controlling parameter, where a giant positive magnetoresistance change can be observed up to 200%. In addition, light modulated conduction, a core factor for multifunctional applications, is successfully demonstrated (current enhancement by a factor of 2 with 11 W white lamp). These results offer new insights to discover the tunability of domain wall nanoelectronics.

The origin of giant electromechanical response in a mixed-phase rhombohedral-tetragonal BiFeO${}_{3}$ thin film is probed using subcoercive scanning probe microscopy based multiple-harmonic measurements. Significant contributions to the strain arise from a second-order harmonic response localized at the phase boundaries. Strain and dissipation data, backed by thermodynamic calculations, suggest that the source of the enhanced electromechanical response is the motion of phase boundaries. These findings elucidate the key role of labile phase boundaries, both natural and artificial, in achieving thin films with giant electromechanical properties.