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The presence of short-range chemical order can be a key factor in determining the mechanical behavior of metals, but directly and unambiguously determining its distribution in complex concentrated alloy systems can be challenging. Here, we directly identify and quantify chemical order in the globally single phase BCC-TiVNbHf(Al) system using aberration corrected scanning transmission electron microscopy (STEM) paired with spatial statistics methods. To overcome the difficulties of short-range order (SRO) quantification with STEM when the components of an alloy exhibit large atomic number differences and near equiatomic ratios, “null hypothesis” tests are used to separate experiment from a random chemical distribution. Experiment is found to deviate from both the case of an ideal random solid solution and a fully ordered structure with statistical significance. We also identify local chemical order in TiVNbHf and confirm and quantify the enhancement of SRO with the addition of Al. These results provide insight into local chemical order in the promising TiVNbHf(Al) refractory alloys while highlighting the utility of spatial statistics in characterizing nanoscale SRO in compositionally complex systems.

The ability to recover the oxygen reduction reaction of poisoned metal oxide surfaces, central to many energy related applications, is demonstrated by controlling relative surface acidity.

Metal oxides are an important class of functional materials, and for many applications, ranging from solid oxide fuel/electrolysis cells, oxygen permeation membranes, and oxygen storage materials to gas sensors (semiconducting and electrolytic) and catalysts, the interaction between the surface and oxygen in the gas phase is central. Ubiquitous Si-impurities are known to impede this interaction, commonly attributed to the formation of glassy blocking layers on the surface. Here, we examine the surface oxygen exchange coefficient (k

Design and synthesis of low-cost and efficient bifunctional catalysts for oxygen reduction reaction (ORR) and oxygen evolution reaction (OER) in Zn-air batteries are essential and challenging. We report a facile method to synthesize heterostructure carbon consisting of graphitic and amorphous carbon derived from the agricultural waste of red bean pods. The heterostructure carbon possesses a large surface area of 625.5 m2 g-1 , showing ORR onset potential of 0.89 V vs. RHE and OER overpotential of 470 mV at 5 mA cm-2 . Introducing hollow FeCo nanoparticles and nitrogen dopant improves the bifunctional catalytic activity of the carbon, delivering ORR onset potential of 0.93 V vs. RHE and OER overpotential of 360 mV. Electron energy-loss spectroscopy (EELS) O K-edge map suggests the presence of localized oxygen on the FeCo nanoparticles, suggesting the oxidation of the nanoparticles. Zn-air battery with these carbon-based catalysts exhibits a peak power density as high as 116.2 mW cm-2 and stable cycling performance over 210 discharge/charge cycles. This work contributes to the advancement of bifunctional oxygen electrocatalysts while converting agricultural waste into value-added material.

Single-phase multiferroic materials that allow the coexistence of ferroelectric and magnetic ordering above room temperature are highly desirable, motivating an ongoing search for mechanisms for unconventional ferroelectricity in magnetic oxides. Here, we report an antisite defect mechanism for room temperature ferroelectricity in epitaxial thin films of yttrium orthoferrite, YFeO3, a perovskite-structured canted antiferromagnet. A combination of piezoresponse force microscopy, atomically resolved elemental mapping with aberration corrected scanning transmission electron microscopy and density functional theory calculations reveals that the presence of YFe antisite defects facilitates a non-centrosymmetric distortion promoting ferroelectricity. This mechanism is predicted to work analogously for other rare earth orthoferrites, with a dependence of the polarization on the radius of the rare earth cation. Our work uncovers the distinctive role of antisite defects in providing a mechanism for ferroelectricity in a range of magnetic orthoferrites and further augments the functionality of this family of complex oxides for multiferroic applications., Ferroelectricity in orthoferrite perovskites has stimulated intense research, but the mechanism remains unclear. Here, the authors propose an antisite defect mechanism for introducing ferroelectricity in magnetically ordered YFeO3 and the family of rare earth orthoferrites.

Summary The dynamics of polarization evolution and rotation in 0.68PbMg1/3Nb2/3O3-0.32PbTiO3 relaxor ferroelectric thin films are studied via in operando synchrotron-based X-ray diffraction with AC electric fields. A frequency-limited suppression of polarization rotation was observed above ultrasonic frequencies ( ≳ 20 kHz). The nature of this suppression is informed by scanning transmission electron microscopy in the zero-field state, where a high density of nanoscale, low-angle domain walls was observed. In combination with switching dynamics studies, the results suggest that the suppression of polarization rotation at ultrasonic frequencies is due to the large activation field needed to move the domain walls when the polarization rotates between different monoclinic phases. These results are critical in understanding piezoelectric relaxation phenomena in relaxor ferroelectrics.

Analysis of nanoscale short-range chemical and/or structural order via (scanning) transmission electron microscopy (S/TEM) imaging is fundamentally limited by projection of the three dimensional sample, which averages informational along the beam direction. Extracting statistically significant spatial correlations between the structure and chemistry determined from these two-dimensional datasets thus remains challenging. Here, we apply methods commonly used in Geographic Information Systems (GIS) to determine the spatial correlation between measures of local chemistry and structure from atomic-resolution STEM imaging of a compositionally complex relaxor, Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_{3}$ (PMN). The approach is used to determine the type of ordering present and to quantify the spatial variation of chemical order, oxygen octahedral distortions, and oxygen octahedral tilts. The extent of autocorrelation and inter-feature correlation among these short-range ordered regions are then evaluated through a spatial covariance analysis, showing correlation as a function of distance. The results demonstrate that integrating GIS tools for analyzing microscopy datasets can serve to unravel subtle relationships among chemical and structural features in complex materials that can be hidden when ignoring their spatial distributions.

Exsolution synthesizes self-assembled metal nanoparticle catalysts via phase precipitation. An overlooked aspect in this method thus far is how exsolution affects the host oxide surface chemistry and structure. Such information is critical as the oxide itself can also contribute to the overall catalytic activity. Combining X-ray and electron probes, we investigated the surface transformation of thin-film SrTi

Hybrid molecular beam epitaxy (MBE) growth of Sn-modified BaTiO3 films was realized with varying domain structures and crystal symmetries across the entire composition space. Macroscopic and microscopic structures and the crystal symmetry of these thin films were determined using a combination of optical second harmonic generation (SHG) polarimetry and scanning transmission electron microscopy (STEM). SHG polarimetry revealed a variation in the global crystal symmetry of the films from tetragonal ( P4 mm) to cubic [Formula: see text] across the composition range, x = 0 to 1 in BaTi1− xSn xO3 (BTSO). STEM imaging shows that the long-range polar order observed when the Sn content is low ( x = 0.09) transformed to a short-range polar order as the Sn content increased ( x = 0.48). Consistent with atomic displacement measurements from STEM, the largest polarization was obtained at the lowest Sn content of x = 0.09 in Sn-modified BaTiO3 as determined by SHG. These results agree with recent bulk ceramic reports and further identify this material system as a potential replacement for Pb-containing relaxor-based thin film devices.

Here we investigate electron scattering simulations with thermal displacements incorporated using molecular dynamics potentials. Specifically, we explore the sensitivity of electron scattering to the phonon band structure, or more explicitly interatomic forces. Silicon serves as the model material where we introduce thermal atomic displacements via empirical and machine-learned molecular dynamics interatomic potentials and compare them to finite-temperature density functional theory interatomic forces. We demonstrate that when molecular dynamics potentials do not sufficiently reproduce the correct phonon band structure, significant errors in the simulated diffraction and image intensities can occur. Moreover, for Si, we find that multislice simulations using machine-learned interatomic potentials are more accurate than empirical ones. In addition to the selected atomic potential, we demonstrate that the sensitivity to the phonon band structure also depends on the crystal zone axis, which can be used to enhance sensitivity to thermal displacements. Finally, we provide a sensitivity analysis with angle-resolved scanning transmission electron microscopy (STEM) to enhance image sensitivity to the details of the phonon band structure.

Relaxor ferroelectrics, which can exhibit exceptional electromechanical coupling, are some of the most important functional materials, with applications ranging from ultrasound imaging to actuators. Since their discovery, their complex nanoscale chemical and structural heterogeneity has made the origins of their electromechanical properties extremely difficult to understand. Here, we employ aberration-corrected scanning transmission electron microscopy to quantify various types of nanoscale heterogeneities and their connection to local polarization in the prototypical relaxor ferroelectric system Pb(Mg1/3Nb2/3)O3–PbTiO3. We identify three main contributions that each depend on Ti content: chemical order, oxygen octahedral tilt and oxygen octahedral distortion. These heterogeneities are found to be spatially correlated with low-angle polar domain walls, indicating their role in disrupting long-range polarization and leading to nanoscale domain formation and the relaxor response. We further locate nanoscale regions of monoclinic-like distortion that correlate directly with Ti content and electromechanical performance. Through this approach, the connections between chemical heterogeneity, structural heterogeneity and local polarization are revealed, validating models that are needed to develop the next generation of relaxor ferroelectrics. Relaxor ferroelectric systems exhibit exceptional electromechanical coupling that arises from a variety of nanoscale chemical ordering. Here, scanning transmission electron microscopy is used to quantify this structural complexity directly.

Extraordinary optoelectronic properties of van der Waals (vdW) heterostructures can be tuned via strain caused by mechanical deformation. Here, we demonstrate strong and localized luminescence in the ultraviolet region from interface bubbles between stacked multilayers of hexagonal boron nitride (hBN). Compared to bubbles in stacked monolayers, bubbles formed by stacking vdW multilayers show distinct mechanical behavior. We use this behavior to elucidate radius- and thickness-dependent bubble geometry and the resulting strain across the bubble, from which we establish the thickness-dependent bending rigidity of hBN multilayers. We then utilize the polymeric material confined within the bubbles to modify the bubble geometry under electron beam irradiation, resulting in strong luminescence and formation of optical standing waves. Our results open a route to design and modulate microscopic-scale optical cavities via strain engineering in vdW materials, which we suggest will be relevant to both fundamental mechanical studies and optoelectronic applications.

We demonstrate that the interfacial dipole associated with bonding across the $\mathrm{SrTi}{\mathrm{O}}_{3}/\mathrm{Si}$ heterojunction can be tuned through space charge, thereby enabling the band alignment to be altered via doping. Oxygen impurities in Si act as donors that create space charge by transferring electrons across the interface into $\mathrm{SrTi}{\mathrm{O}}_{3}$. The space charge induces an electric field that modifies the interfacial dipole, thereby tuning the band alignment from type II to III. The transferred charge, accompanying built-in electric fields, and change in band alignment are manifested in electrical transport and hard x-ray photoelectron spectroscopy measurements. Ab initio models reveal the interplay between polarization and band offsets. We find that band offsets can be tuned by modulating the density of space charge across the interface. Modulating the interface dipole to enable electrostatic altering of band alignment opens additional pathways to realize functional behavior in semiconducting hybrid heterojunctions.

Grain refinement is a widely sought-after feature of many metal production processes and frequently involves a process of recrystallization. Some processing methods use very high strain rates and high strains to refine the grain structure into the nanocrystalline regime. However, grain refinement processes are not clear in these extreme conditions, which are hard to study systematically. Here, we access those extreme conditions of strain and strain rate using single copper microparticle impact events with a laser-induced particle impact tester. Using a combined dictionary-indexing electron backscatter diffraction and scanning transmission electron microscopy approach for postmortem characterization of impact sites, we systematically explore increasing strain levels and observe a recrystallization process that is facilitated by nanotwinning, which we term nanotwinning-assisted dynamic recrystallization. It achieves much finer grain sizes than established modes of recrystallization and therefore provides a pathway to the finest nanocrystalline grain sizes through extreme straining processes.

The entropy landscape of high-entropy carbides can be used to understand and predict their structure, properties, and stability. Using first principles calculations, the individual and temperature-dependent contributions of vibrational, electronic, and configurational entropies are analyzed, and compare them qualitatively to the enthalpies of mixing. As an experimental complement, high-entropy carbide thin films are synthesized with high power impulse magnetron sputtering to assess structure and properties. All compositions can be stabilized in the single-phase state despite finite positive, and in some cases substantial, enthalpies of mixing. Density functional theory calculations reveal that configurational entropy dominates the free energy landscape and compensates for the enthalpic penalty, whereas the vibrational and electronic entropies offer negligible contributions. The calculations predict that in many compositions, the single-phase state becomes stable at extremely high temperatures (>3000 K). Consequently, rapid quenching rates are needed to preserve solubility at room temperature and facilitate physical characterization. Physical vapor deposition provides this experimental validation opportunity. The computation/experimental data set generated in this work identifies "valence electron concentration" as an effective descriptor to predict structural and thermodynamic properties of multicomponent carbides and educate new formulation selections.

Samarium supersensors Piezoelectric materials produce electric charge in response to changes in stress and are thus good sensor materials. One challenge has been growing single-crystal piezoelectrics with uniform properties. As of now, much of the crystal is discarded because of compositional variations. Li et al. synthesized single crystals of samarium-doped Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 that have uniform and extremely high piezoelectric properties (see the Perspective by Hlinka). These crystals are ideal for a variety of sensing applications and could reduce cost by eliminating waste. Science , this issue p. 264 ; see also p. 228

In this Letter, we demonstrate a new class of infrared nanophotonic materials based on monolithic, multilayered doped cadmium oxide (CdO) thin films, where each CdO layer is individually tuned to s...

The emergence of ferroelectricity in nanometer-thick films of doped hafnium oxide (HfO2) makes this material a promising candidate for use in Si-compatible non-volatile memory devices. The switchable polarization of ferroelectric HfO2 controls functional properties of these devices through the electric potential distribution across the capacitor. The experimental characterization of the local electric potential at the nanoscale has not so far been realized in practice. Here, we develop a new methodology which allows us, for the first time, to experimentally quantify the polarization-dependent potential profile across few-nanometer-thick ferroelectric Hf0.5Zr0.5O2 thin films. Using a standing-wave excitation mode in synchrotron based hard X-ray photoemission spectroscopy, we depth-selectively probe TiN/Hf0.5Zr0.5O2/W prototype memory capacitors and determine the local electrostatic potential by analyzing the core-level line shifts. We find that the electric potential profile across the Hf0.5Zr0.5O2 layer is non-linear and changes with in situ polarization switching. Combined with our scanning transmission electron microscopy data and theoretical modeling, we interpret the observed non-linear potential behavior in terms of defects in Hf0.5Zr0.5O2, at both interfaces, and their charge state modulated by the ferroelectric polarization. Our results provide an important insight into the intrinsic electronic properties of HfO2 based ferroelectric capacitors and are essential for engineering memory devices.

While Cr poisoning of the oxygen reduction reaction (ORR) at SOFC cathodes is widely agreed to involve deactivation of oxygen exchange sites, the degradation mechanism remains ambiguous. Here, we selected an alternative cathode material Pr0.1Ce0.9O2− δ , free of Sr segregation, to systematically investigate the effect of Cr-induced degradation in ORR. We expand on our previous studies in which the acidity/basicity of binary additives was found to be a strong indicator of the rate of oxygen surface exchange, by electrochemically investigating the ORR activity of the PCO cathode by impedance spectroscopy. Serial infiltration with acidic Cr-based oxides was found to degrade ORR activity as reflected in a 20-fold increase in area specific resistance (ASR) without corresponding changes in activation energy, with the opposite trend obtained with Ca-based oxides. Detected changes in total capacitance, attributed to changes in surface capacitance, also suggest depressed/enhanced PCO surface redox behavior with Cr/Ca-based infiltrants. Taken together, these results point to a more universal source of ORR poisoning/activation, based on acidity/basicity, rather than physical blocking of active sites. With this improved understanding, one can expect progress to be made in the coming years in optimizing means for protecting catalytic surfaces from degradation and/or improving their performance.

The break-up of microparticle surface oxides is needed to generate a clean metal-metal contact for metallurgical bonding during impact events such as seen in cold-spray. However, the mechanism by which this occurs is not clear. Using a laser-induced particle impact tester, we conduct site-specific experiment of single Cu microparticle impacts on a polished Cu substrate and characterize the impact sites. We observe that oxide layers on the particles begin to delaminate at velocities high enough to cause jetting of the substrate around the periphery of the impact site. We show that the energy cost of such delamination is ∼30% of the energy needed to slow and stop particle as it bonds to the substrate, with the remainder being associated with the jetting process and bonding itself. At higher velocities, the oxide barrier is broken up to permit metallurgical bonding. Closer to the particle south-pole where hoop strain is low, oxide layers break up with few gaps and thus no metallurgical bonding is observed. Away from the south-pole where larger strains develop, oxide breakup permits intermittent bonding by the extrusion of bare metal into the gaps between oxide islands. These observations provide new insights towards understanding impact-induced metallurgical bonding during cold-spray process.

The atomic structure at the interface between two-dimensional (2D) and three-dimensional (3D) materials influences properties such as contact resistance, photo-response, and high-frequency electrical performance. Moir\'e engineering is yet to be utilized for tailoring this 2D/3D interface, despite its success in enabling correlated physics at 2D/2D interfaces. Using epitaxially aligned MoS2/Au{111} as a model system, we demonstrate the use of advanced scanning transmission electron microscopy (STEM) combined with a geometric convolution technique in imaging the crystallographic 32 A moir\'e pattern at the 2D/3D interface. This moir\'e period is often hidden in conventional electron microscopy, where the Au structure is seen in projection. We show, via ab initio electronic structure calculations, that charge density is modulated according to the moir\'e period, illustrating the potential for (opto-)electronic moir\'e engineering at the 2D/3D interface. Our work presents a general pathway to directly image periodic modulation at interfaces using this combination of emerging microscopy techniques., Comment: 14 pages and 5 figures

We report an approach to expand the effective number of pixels available to small, two-dimensional electron detectors. To do so, we acquire subsections of a diffraction pattern that are then accurately stitched together in post-processing. Using an electron microscopy pixel array detector (EMPAD) that has only 128 × 128 pixels, we show that the field of view can be expanded while achieving high reciprocal-space sampling. Further, we highlight the need to properly account for the detector position (rotation) and the non-orthonormal diffraction shift axes to achieve an accurate reconstruction. Applying the method, we provide examples of spot and convergent beam diffraction patterns acquired with a pixelated detector., United States. Air Force. Office of Scientific Research (Grant FA9550-17-1-0225), National Science Foundation (U.S.) (Award ECCS-1542015), National Science Foundation (U.S.) (Grant DMR-1726294)

The search for new materials via compositional exploration has recently led to the discovery of entropy stabilized and high entropy ceramics. The chemical diversity in the cation sublattice of high entropy ceramics has led to many enhanced properties and applications such as reversible energy storage, low temperature water splitting, amorphous-like thermal transport in crystalline solids and enhanced mechanical properties. This work describes the synthesis and mechanical properties of high entropy (HfNbTaTiZr)Cx thin films as a function of carbon content. The nature of the bonding and microstructure evolves as the material transforms from metallic to ceramic to nanocomposite with variations in the quantity and types of carbon, yielding large variations in the film hardness. Through multiple characterization techniques and first principles investigations, we separate the roles of microstructure and bonding characteristics in the mechanical property development of (HfNbTaTiZr)Cx thin films. This study presents a strategy to establish the bonding, structure, and property relationships in chemically disordered high entropy ceramics, largely based on the relative populations of filled or empty antibonding states for which there are new abilities to do so in high configurational entropy systems that exhibit high solubility of diverse cations while retaining rocksalt structure.

Nonlinear and hysteretic electrical devices are needed for applications from circuit protection to next-generation computing. Widely-studied devices for resistive switching are based on mass transport, such as the drift of ions in an electric field, and on collective phenomena, such as insulator-metal transitions. We ask whether the large photoconductive response known in many semiconductors can be stimulated in the dark and harnessed to design electrical devices. We design and test devices based on photoconductive CdS, and our results are consistent with the hypothesis that resistive switching arises from point defects that switch between deep- and shallow-donor configurations: defect level switching (DLS). This new electronic device design principle - photoconductivity without photons - leverages decades of research on photoconductivity and defect spectroscopy. It is easily generalized and will enable the rational design of new nonlinear, hysteretic devices for future electronics., Comment: Text and supplemental merged into one file