1. 8- to 9-μm and 14- to 15-μm two-color 640x486 GaAs/AlGaAs quantum well infrared photodetector (QWIP) focal plane array camera
- Author
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Sir B. Rafol, John K. Liu, C. A. Shott, Sumith V. Bandara, Paul D. LeVan, James F. Long, Anjali Singh, John David Vincent, Edward M. Luong, N. Q. Tran, Sarath D. Gunapala, and Jason M. Mumolo
- Subjects
Materials science ,business.industry ,Photodetector ,Noise-equivalent temperature ,Gallium arsenide ,chemistry.chemical_compound ,Optics ,Operating temperature ,chemistry ,Optoelectronics ,Quantum efficiency ,business ,Quantum well infrared photodetector ,Quantum well ,Molecular beam epitaxy - Abstract
An optimized long-wavelength two-color Quantum Well Infrared Photodetector (QWIP) device structure has been designed. This device structure was grown on a three inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE). This wafer was processed into several 640x486 format monolithically integrated 8-9 and 14-15 micron two color (or dual wavelength) QWIP focal plane arrays (FPAs). These FPAs were then hybridized to 640x486 silicon CMOS readout multiplexers. A thinned (i.e., substrate removed) FPA hybrid was integrated into a liquid helium cooled dewar to perform electrical and optical characterization and to demonstrate simultaneous two-color imagery. The 8-9 micron detectors in the FPA have shown background limited performance (BLIP) at 70 K operating temperature, at 300 K background with f/2 cold stop. The 14-15 micron detectors of the FPA have reached BLIP at 40 K operating temperature at the same background conditions. In this presentation we discuss the performance of this long-wavelength dualband QWIP FPA in quantum efficiency, detectivity, noise equivalent temperature difference (NEAT), uniformity, and operability.
- Published
- 1999