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In this work, we studied the free-carrier transport properties and space-charge formation/polarization in a CdZnTe bar-shaped radiation detector using the Laser-Induced Transient Current technique. We found out that a steady-state space charge ranging from 8 × 108 to 2.1 × 109 cm−3 is formed throughout the detector at about 0.5 s following biasing. The measured current waveforms were modeled by Monte Carlo simulations after taking into account the electric and weighting fields inside the detector and shielding box. Modeling of the unpolarized waveforms revealed an exceptionally high electron mobility-lifetime product μ e τ e ≥ 0.095 c m 2 V − 1 . The observed formation of positive space charge in the biased detector and linear scaling of the current waveform shapes on applied bias revealed that the detector polarization is attributed to carrier injection at the anode. Measurements in pulsed and DC bias in modified electrode geometry proved the surface-charge formation. [ABSTRACT FROM AUTHOR]

We investigated the influence of deep levels on the electrical transport properties of CdZnTeSe (CZTS) radiation detectors by comparing experimental data with numerical simulations based on the simultaneous solution of drift-diffusion and Poisson equations, including the Shockley-Read-Hall model of the carrier trapping. We determined the Schottky barrier heights and the Fermi level position from I-V measurements. We measured the time evolution of the electric field and the electrical current after the application of a voltage bias. We observed that the electrical properties of CZTS are fundamentally governed by two deep levels close to the mid-bandgap—one recombination and one hole trap. We show that the hole trap indirectly increases the mobility-lifetime product of electrons. We conclude that the structure of deep levels in CZTS is favorable for high electrical charge transport. [ABSTRACT FROM AUTHOR]

Because of its excellent opto-electronic properties, CdZnTe (CZT) has been the material of choice for x- and gamma-ray detectors operable at room temperature. CZT is the leading commercially available room-temperature radiation detector material today. Although much progress has been made over the past three decades, today's CZT crystals still face certain challenges, especially the presence of the performance-limiting materials defects and the associated relatively high production cost. In this regard, CdxZn1−xTeySe1−y (CZTS) is emerging as a next-generation compound semiconductor, which overcomes some of the limitations of CZT technology for the stated applications. Here, we conducted a study to evaluate the crystalline quality of the traveling heater method grown CZTS with an optimized alloy composition, i.e., Cd0.9Zn0.1Te0.98Se0.02. The as-grown samples were evaluated by low-temperature photoluminescence (PL) spectroscopy and high-resolution x-ray diffraction using the synchrotron light source at Brookhaven National Laboratory. The full width at half maximum of both the PL and x-ray rocking curves was observed to be broadened due to the lattice disorder of the quaternary compound, eventually degrading the crystalline quality. This was consistent with density functional theory calculations. [ABSTRACT FROM AUTHOR]

In this research, we studied point defects induced in Bridgman-grown CdZnTe detectors doped with Indium (In), Aluminium (Al), Nickel (Ni), and Tin (Sn). Point defects associated with different dopants were observed, and these defects were analyzed in detail for their contributions to electron/ hole (e/h) trapping. We also explored the correlations between the nature and abundance of the point defects with their influence on the resistivity, electron mobility-lifetime (lμτe) product, and electron trapping time. We used current-deep level transient spectroscopy to determine the energy, capture cross-section, and concentration of each trap. Furthermore, we used the data to determine the trapping and de-trapping times for the charge carriers. In In-doped CdZnTe detectors, uncompensated Cd vacancies (VCd-) were identified as a dominant trap. The VCd- were almost compensated in detectors doped with Al, Ni, and Sn, in addition to co-doping with In. Dominant traps related to the dopant were found at Ev + 0.36 eV and Ev + 1.1 eV, Ec + 76 meV and Ev + 0.61 eV, Ev + 36 meV and Ev + 0.86 eV, Ev + 0.52 eV and Ec 0.83 eV in CZT:In, CZT:InþAl, CZT:InþNi, and CZT:InþSn, respectively. Results indicate that the addition of other dopants with In affects the type, nature, concentration (Nt), and capture cross-section (σ) and hence trapping (tt) and de-trapping (tdt) times. The dopant-induced traps, their corresponding concentrations, and charge capture cross-section play an important role in the performance of radiation detectors, especially for devices that rely solely on electron transport. [ABSTRACT FROM AUTHOR]