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41 results on '"Jaime-Vasquez, M."'

1. Impurity ‘Hot Spots’ in MBE HgCdTe/CdZnTe

Author

Benson, J. D., Bubulac, L. O., Wang, A., Jacobs, R. N., Arias, J. M., Jaime-Vasquez, M., Smith, P. J., Almeida, L. A., Stoltz, A., Wijewarnasuriya, P. S., Yulius, A., Carmody, M., Reddy, M., Peterson, J., Johnson, S. M., Bangs, J., and Lofgreen, D. D.

Published
2018
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3. Analysis of Etched CdZnTe Substrates

Author

Benson, J. D., Bubulac, L. O., Jaime-Vasquez, M., Lennon, C. M., Arias, J. M., Smith, P. J., Jacobs, R. N., Markunas, J. K., Almeida, L. A., Stoltz, A., Wijewarnasuriya, P. S., Peterson, J., Reddy, M., Jones, K., Johnson, S. M., and Lofgreen, D. D.

Published
2016
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5. As-Received CdZnTe Substrate Contamination

Author

Benson, J. D., Bubulac, L. O., Jaime-Vasquez, M., Lennon, C. M., Smith, P. J., Jacobs, R. N., Markunas, J. K., Almeida, L. A., Stoltz, A., Arias, J. M., Wijewarnasuriya, P. S., Peterson, J., Reddy, M., Vilela, M. F., Johnson, S. M., Lofgreen, D. D., Yulius, A., Carmody, M., Hirsch, R., Fiala, J., and Motakef, S.

Published
2015
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9. Impurity Gettering in (112)B HgCdTe/CdTe/Alternate Substrates

Author

Benson, J. D., Bubulac, L. O., Lennon, C. M., Jacobs, R. N., Smith, P. J., Markunas, J. K., Jaime-Vasquez, M., Almeida, L. A., Stoltz, A., Arias, J. A., Brill, G., Chen, Y., Wijewarnasuriya, P. S., Vilela, M. F., Peterson, J., Johnson, S. M., Lofgreen, D. D., Rhiger, D., Patten, E. A., and Bangs, J.

Published
2013
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14. Dislocation Analysis in (112)B HgCdTe/CdTe/Si

Author

Benson, J. D., Farrell, S., Brill, G., Chen, Y., Wijewarnasuriya, P. S., Bubulac, L. O., Smith, P. J., Jacobs, R. N., Markunas, J. K., Jaime-Vasquez, M., Almeida, L. A., Stoltz, A., Lee, U., Vilela, M. F., Peterson, J., Johnson, S. M., Lofgreen, D. D., Rhiger, D., Patten, E. A., and Goetz, P. M.

Published
2011
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19. Characterization of Dislocations in (112)B HgCdTe/CdTe/Si

Author

Benson, J. D., Bubulac, L. O., Smith, P. J., Jacobs, R. N., Markunas, J. K., Jaime-Vasquez, M., Almeida, L. A., Stoltz, A. J., Wijewarnasuriya, P. S., Brill, G., Chen, Y., Lee, U., Vilela, M. F., Peterson, J., Johnson, S. M., Lofgreen, D. D., Rhiger, D., Patten, E. A., and Goetz, P. M.

Published
2010
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33. Development of MBE II-VI Epilayers on GaAs(211)B

Author

ARMY COMMUNICATIONS-ELECTRONICS COMMAND FORT BELVOIR VA NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE, Jacobs, R N, Nozaki, C, Almeida, L A, Jaime-Vasquez, M, Lennon, C, Markunas, J K, Benson, D, Smith, P, Zhao, W F, Smith, D J, ARMY COMMUNICATIONS-ELECTRONICS COMMAND FORT BELVOIR VA NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE, Jacobs, R N, Nozaki, C, Almeida, L A, Jaime-Vasquez, M, Lennon, C, Markunas, J K, Benson, D, Smith, P, Zhao, W F, and Smith, D J

Abstract

Large-area, low-cost substrates are envisioned for next-generation HgCdTe infrared focal-plane arrays (IRFPA). Si, GaAs, Ge, and InSb have been previously examined as potential candidates. Fabrication of IRFPAs based on these substrates is limited by fundamental materials properties that potentially lead to lower detector performance and operability. Lattice and thermal mismatch between the substrate and epilayer are just two of several material factors that must be considered. We have reviewed these factors in the context of more recent data, and determined it worthwhile to revisit the use of GaAs substrates for epitaxial growth of HgCdTe. Our study starts with an evaluation of the surface quality (epireadiness) of commercially available (211) B-oriented GaAs substrates. Molecular beam epitaxial growth of CdTe buffer layers and subsequent HgCdTe absorber layers are performed in separate vacuum-interconnected chambers. The importance of optimization of the CdTe buffer layer growth for high-quality HgCdTe is detailed through surface morphology and x-ray studies. x-Ray diffraction rocking-curve full-width at half-maximum values as low as 52 arcsec have been obtained. Long-wave infrared Hg(sub 1-x)Cd(sub x)Te (x = 0.23) has been grown on these buffer layers, producing cross-hatch-dominated surface morphologies, with dislocation densities as low as 3 x 10 e(expn 6) cm(expn -2). We have also obtained (for optimized layers), 80-K Hall-effect n-type carrier concentration and electron mobility of approximately 1.5 x 10(expn 15) cm(expn -3) and 1 x10(expn 5) cm(expn 2) V(expn -1) s(expn -1), respectively. Finally, we briefly compare GaAs and Si in light of our preliminary investigation, Prepared in cooperation with the Corbin Company, Alexandria, VA, the Department of Physics, Arizona State University, Tempe, and the RAND Corporation, Santa Monica, CA. Published in the Journal of Electronic Materials, v41 n10 p2707-2713, 2012.

Published
2012

40. Fabrication of nanostructured Al2CuMg thin film by femtosecond pulsed laser ablation

Author

Jaime Vasquez, M., Halada, G.P., Clayton, C.R., and Gouma, P.I.

Subjects
*THIN films, *MICROSCOPY, *ELECTRON microscopy, *SOLID state electronics
Abstract

A nanostructured Al2CuMg thin film was formed by ablating reactive arc melted targets with femtosecond (10-15 s range) laser pulses in a high vacuum chamber (10-6 Torr). The films were characterized by secondary electron microscopy, energy dispersive analysis of X-rays, X-ray diffraction and transmission electron microscopy. Discussion is focused on the morphology of the film produced by this technique. It was observed that the femtosecond ablation technique could be used to form nanostructured metallic thin films. [Copyright &y& Elsevier]

Published
2004
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41. Ion scattering and electron spectroscopy of the chemical species at a HF-prepared Si(211) surface.

Author

Jaime-Vasquez, M., Martinka, M., Groenert, M., and Dinan, J.

Subjects
*ELECTRON spectroscopy, *SURFACES (Physics), *ELECTRON emission, *SPECTRUM analysis, *QUANTUM chemistry, *PARTICLES (Nuclear physics)
Abstract

The species and the nature of their chemical bonds at the surface of a hydrogen-terminated Si(211) wafer were characterized using temperature desorption spectroscopy, ion scattering spectroscopy, and electron spectroscopy. The surface region is dominated by monohydride species with dihydrides present in small amounts. Fluorine is distributed across the top layer as largely a physisorbed species to the Si substrate. Low-energy 3He+ ions remove the H and F species with only minimal damage to the underlying region. [ABSTRACT FROM AUTHOR]

Published
2006
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