1. Zero external magnetic field quantum standard of resistance at the 10-9 level
- Author
-
Patel, D. K., Fijalkowski, K. M., Kruskopf, M., Liu, N., Götz, M., Pesel, E., Jaime, M., Klement, M., Schreyeck, S., Brunner, K., Gould, C., Molenkamp, L. W., and Scherer, H.
- Subjects
Condensed Matter - Mesoscale and Nanoscale Physics ,Condensed Matter - Other Condensed Matter - Abstract
The quantum anomalous Hall effect holds promise as a disruptive innovation in condensed matter physics and metrology, as it gives access to Hall resistance quantization in terms of the von-Klitzing constant RK = h/e2 at zero external magnetic field. In this work, we study the accuracy of Hall resistance quantization in a device based on the magnetic topological insulator material (V,Bi,Sb)2Te3. We show that the relative deviation of the Hall resistance from RK at zero external magnetic field is (4.4 +/- 8.7) nohm/ohm when extrapolated to zero measurement current, and (8.6 +/- 6.7) nohm/ohm when extrapolated to zero longitudinal resistivity (each with combined standard uncertainty, k = 1), which sets a new benchmark for the quantization accuracy in topological matter. This precision and accuracy at the nohm/ohm level (or 10-9 of relative uncertainty) achieve the thresholds for relevant metrological applications and establish a zero external magnetic field quantum standard of resistance - an important step towards the integration of quantum-based voltage and resistance standards into a single universal quantum electrical reference., Comment: 12 pages (8 pages main text, and 4 pages supplementary information), with 6 figures and 2 tables
- Published
- 2024