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We have demonstrated a compact and efficient metasurface-based spectral imager for use in the near-infrared range. The spectral imager was created by fabricating dielectric multilayer filters directly on top of the CMOS image sensor. The transmission wavelength for each spectral channel was selected by embedding a Si nanopost array of appropriate dimensions within the multilayers on the corresponding pixels, and this greatly simplified the fabrication process by avoiding the variation of the multilayer-film thicknesses. The meta-spectral imager shows high efficiency and excellent spectral resolution up to 2.0 nm in the near-infrared region. Using the spectral imager, we were able to measure the broad spectra of LED emission and obtain hyperspectral images from wavelength-mixed images. This approach provides ease of fabrication, miniaturization, low crosstalk, high spectral resolution, and high transmission. Our findings can potentially be used in integrating a compact spectral imager in smartphones for diverse applications.

The photoresponse in graphene has drawn significant attention for potential applications owing to its gapless linear electronic band structure. To enhance both the spectral selectivity and responsivity in graphene, we demonstrate a novel but versatile and simple method of introducing surface plasmons. We utilize block copolymers to fabricate different nanostructured metal nanoparticle arrays on a single graphene surface. The plasmonic resonances could be tuned using Ag, Au, and Cu metal nanoparticles. By extending the synthetic route for the metallic particles, dual surface plasmonic bands from a single material were also successfully realized. Furthermore, enhanced photoresponsivity through the entire visible spectra could be achieved by mixing metallic nanoparticles and by controlling their shapes. Owing to its all-band transition characteristics, the ultrabroad band photocurrent generation in graphene can be tailored for an arbitrary photoresponse, which could be utilized in flexible CMOS image sensors...

We demonstrate optical pumping lasers based on colloidal quantum dots, with a very thin geometry consisting of a ≈20 nm thick film. Obstacles in ultrasmall laser devices come from the limitation of gain materials and the size of cavities for lasing modes, which requires a minimum thickness of the gain media (typically greater than 50-100 nm). Here we introduce dielectric waveguide structures with a high refractive index, in order to reduce the thickness of quantum dot gain media as well as their threshold energy (≈39 % compared to the original gain medium). Finite-difference time-domain simulations show that the modal confinement factor of thinner quantum dot films can be improved by the presence of an adjacent waveguide layer. We also discuss the possible role of dielectric waveguide layers for efficient heat dissipation during optical pumping. Integrating an extremely thin colloidal quantum dot gain medium into optical waveguides is a promising platform for downscaling on-chip photonic integrated devices, as well as investigating extreme interactions between light and matter such as surface plasmon-photon coupling.

The ability of metasurfaces to manipulate light at the subwavelength scale offers unprecedented functionalities for passive and active lasing devices. However, applications of metasurfaces to optical devices are rare due to fabrication difficulties. Here, we present quantum dot light emitting diodes (QDLEDs) with a metasurface-integrated metal electrode and demonstrate microscopically controlled LED emission. By incorporating slot-groove antennas into the metal electrode, we show that LED emission from randomly polarized QD sources can be polarized and directed at will. Utilizing the relation between polarization and emission direction, we also demonstrate microscopic LED beam splitting through the selective choice of polarization.

Nanophotonics capable of directing radiation or enhancing quantum-emitter transition rates rely on plasmonic nanoantennas. We present here a novel Babinet-inverted magnetic-dipole-fed multislot optical Yagi-Uda antenna that exhibits highly unidirectional radiation to free space, achieved by engineering the relative phase of the interacting surface plasmon polaritons between the slot elements. The unique features of this nanoantenna can be harnessed for realizing energy transfer from one waveguide to another by working as a future "optical via".

We report on the systematic studies of the parameters governing the integrity of graphene film during general “wet” transfer from a thermodynamic point of view. We chose polystyrene (PS) as a test carrier material and attempted to use eight different solvents to find optimal conditions for the graphene transfer from a catalyst film to a desired substrate without defects. When parameterizing the conventional chemical properties of solvents, the boiling points and surface tension were found to be critical in determining the quality of the transferred graphene. During the formation step of a conformal PS film on a graphene surface before catalyst etching, a solvent with a boiling point over ∼140 °C was essential. During the following PS film removal step, a solvent with surface tension higher than approximately 29 dyn/cm led to the formation of a continuous graphene film without cracks and holes. In addition, a high spin-coating velocity and lower concentration of PS in the solvent enhanced the quality of a transferred graphene film. The UV treatment of Si/SiO2 (100 nm) was also found to improve the adhesion of the graphene on substrates. By electrical characterization, morphological differences were found to affect the electrical properties markedly.

Multicolor single InGaN/GaN dot-in-nanowire light emitting diodes (LEDs) were fabricated on the same substrate using selective area epitaxy. It is observed that the structural and optical properties of InGaN/GaN quantum dots depend critically on nanowire diameters. Photoluminescence emission of single InGaN/GaN dot-in-nanowire structures exhibits a consistent blueshift with increasing nanowire diameter. This is explained by the significantly enhanced indium (In) incorporation for nanowires with small diameters, due to the more dominant contribution for In incorporation from the lateral diffusion of In adatoms. Single InGaN/GaN nanowire LEDs with emission wavelengths across nearly the entire visible spectral were demonstrated on a single chip by varying the nanowire diameters. Such nanowire LEDs also exhibit superior electrical performance, with a turn-on voltage ∼2 V and negligible leakage current under reverse bias. The monolithic integration of full-color LEDs on a single chip, coupled with the capacity to tune light emission characteristics at the single nanowire level, provides an unprecedented approach to realize ultrasmall and efficient projection display, smart lighting, and on-chip spectrometer.

To date, there have been no efficient semiconductor light emitters operating in the green and amber wavelengths. This study reports on the synthesis of InGaN nanowire photonic crystals, including dot-in-nanowires, nanotriangles, and nanorectangles with precisely controlled size, spacing, and morphology, and further demonstrates that bottom-up InGaN photonic crystals can exhibit highly efficient and stable emission. The formation of stable and scalable band edge modes in defect-free InGaN nanowire photonic crystals is directly measured by cathodoluminescence studies. The luminescence emission, in terms of both the peak position (λ ≈ 505 nm) and spectral linewidths (full-width-half-maximum ≈ 12 nm), remains virtually invariant in the temperature range of 5–300 K and under excitation densities of 29 W cm−2 to 17.5 kW cm−2. To the best of our knowledge, this is the first demonstration of the absence of Varshni and quantum-confined Stark effects in wurtzite InGaN light emitters—factors that contribute significantly to the efficiency droop and device instability under high-power operation. Such distinct emission properties of InGaN photonic crystals stem directly from the strong Purcell effect, due to efficient coupling of the spontaneous emission to the highly stable and scalable band-edge modes of InGaN photonic crystals, and are ideally suited for uncooled, high-efficiency light-emitting-diode operation.

The patterning of colloidal quantum dots with nanometer resolution is essential for their application in photonics and plasmonics. Several patterning approaches, such as the use of polymer composites, molecular lock-and-key methods, inkjet printing, and microcontact printing of quantum dots, have limits in fabrication resolution, positioning and the variation of structural shapes. Herein, we present an adaptation of a conventional liftoff method for patterning colloidal quantum dots. This simple method is easy and requires no complicated processes. Using this method, we formed straight lines, rings, and dot patterns of colloidal quantum dots on metallic substrates. Notably, patterned lines approximately 10 nm wide were fabricated. The patterned structures display high resolution, accurate positioning, and well-defined sidewall profiles. To demonstrate the applicability of our method, we present a surface plasmon generator elaborated from quantum dots.

Patterning of colloidal quantum dot (QD) of a nanometer res- olution is important for potential applications in micro- or nanophotonics. Several patterning techniques such as polymer composites, molecular key-lock methods, inkjet printing, and the microcontact printing of QDs have been successfully developed and applied to various plasmonic applications. However, these methods are not easily adapted to conven- tional complementary metal-oxide semiconductor (CMOS)-compatible processes because of either limits in fabrication resolutions or difficulties in sub-100-nm alignment. Here, we present an adaptation of a conven- tional lift-off method for the patterning of colloidal QDs. This simple method can be later applied to CMOS processes by changing electron beam lithography to photolithography for building up photon-generation ele- ments in various planar geometries. Various shapes formed by colloidal QD clusters such as straight lines, rings, and dot patterns with sub-100-nm size could be fabricated. The patterned structures show sub-10-nm posi- tioning with good fluorescence properties and well-defined sidewall profiles. To demonstrate the applicability of our method, we present a sur- face plasmon generator from a QD cluster. © 2013 Society of Photo-Optical

The patterning of colloidal quantum dots with nanometer resolution is essential for their application in photonics and plasmonics. Several patterning approaches, such as the use of polymer composites, molecular lock-and-key methods, inkjet printing and microcontact printing of quantum dots have been recently developed. Herein, we present a simple method of patterning colloidal quantum dots for photonic nanostructures such as straight lines, rings and dot patterns either on transparent or metallic substrates. Sub-10 nm width of the patterned line could be achieved with a well-defined sidewall profile. Using this method, we demonstrate a surface plasmon launcher from a quantum dot cluster in the visible spectrum.