1. Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates
- Author
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Artur Tuktamyshev, Stefano Vichi, Federico Guido Cesura, Alexey Fedorov, Giuseppe Carminati, Davide Lambardi, Jacopo Pedrini, Elisa Vitiello, Fabio Pezzoli, Sergio Bietti, and Stefano Sanguinetti
- Subjects
droplet epitaxy ,quantum dot ,metamorphic buffer layer ,strain relaxation ,III–V semiconductors ,Chemistry ,QD1-999 - Abstract
We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In0.6Al0.4As metamorphic buffer layer grown on a GaAs(111)A misoriented substrate. The comparison between the quantum electronic calculations of the optical transitions and the emission properties of the quantum dots highlights the presence of a strong quenching of the emission from larger quantum dots. Detailed analysis of the surface morphology during the capping procedure show the presence of a critical size over which the quantum dots are plastically relaxed.
- Published
- 2022
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