1. High performance piezotronic spin transistors using molybdenum disulfide nanoribbon
- Author
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H.Z. Guo, X.F. Yan, J.Z. Peng, L.L. Li, Q. Chen, and F.M. Peeters
- Subjects
Phase transition ,Materials science ,Spin polarization ,Condensed matter physics ,Renewable Energy, Sustainability and the Environment ,business.industry ,Physics ,02 engineering and technology ,Physik (inkl. Astronomie) ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,Chemistry ,Semiconductor ,Zigzag ,Piezophototronics ,Piezotronics ,Spin transistor ,General Materials Science ,Electrical and Electronic Engineering ,0210 nano-technology ,business ,Quantum ,Engineering sciences. Technology - Abstract
Two-dimensional (2D) materials are promising candidates for atomic-scale piezotronics and piezophototronics. Quantum edge states show fascinating fundamental physics such as nontrivial topological behavior and hold promising practical applications for low-power electronic devices. Here, using the tight-binding approach and quantum transport simulations, we investigate the piezotronic effect on the spin polarization of edge states in a zigzag-terminated monolayer MoS2 nanoribbon. We find that the strain-induced piezoelectric potential induces a phase transition of edge states from metal to semiconductor. However, in the presence of exchange field, edge states become semi-metallic with significant spin splitting and polarization that can be tuned by external strain. We show that quantum transport conductance exhibits a 100% spin polarization over a wide range of strain magnitudes. This effect is used in a propose prototype of piezotronic spin transistor. Our results provide a fundamental understanding of the piezotronic effect on edge states in zigzag monolayer MoS2 nanoribbons and are relevant for designing high-performance piezotronic spin devices.
- Published
- 2020