1. The microstructure and properties of a buried AIN layer produced by nitrogen implantation into pure aluminum
- Author
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J.R Tesmer, X. D. Wu, H.L Lu, M.J Borden, and W.F Sommer
- Subjects
inorganic chemicals ,Materials science ,Aluminium nitride ,Metals and Alloys ,Analytical chemistry ,chemistry.chemical_element ,Surfaces and Interfaces ,Nitride ,Microstructure ,complex mixtures ,Nitrogen ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Crystallography ,chemistry.chemical_compound ,Ion implantation ,chemistry ,Electron diffraction ,Electrical resistivity and conductivity ,X-ray crystallography ,Materials Chemistry - Abstract
A buried aluminum nitride (AIN) layer was formed by nitrogen ion implantation into pure aluminum with doses of 10, 18 and 28 × 1017 N+ cm−2 at 200 keV. In order to analyze the profile of the implanted nitrogen in aluminum, 3.5 MeV 4He+ backscattering was used, in preference to 2.0 Mev 4He+ backscattering. A rectangular-like profile of the implanted nitrogen was obtained from the Rutherford backscattering spectra after the dose of 10 × 1017 N+ cm−2. The nitrogen to aluminum ratio at the rectangular-like profile is about 0.9–1.0. The results of X-ray diffraction and transmission electron diffraction indicated that aluminum nitride structure is essentially the hexagonal crystal. Aluminum nitride with f.c.c. structure also appeared on nitrogen implantantion into aluminum. This is a transient structure. The resistivity of AIN formed by nitrogen implantation into aluminum is about (1.4−2.0) × 1012 Ω cm.
- Published
- 1996
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