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27 results on '"J. Y. Dai"'

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1. Ultralow switching voltage and power consumption of GeS2 thin film resistive switching memory

2. [The 492nd case: recurrent thrombosis, thrombocytopenia]

3. 20-MHz phased array ultrasound transducer for in vivo ultrasound imaging of small animals

6. Hydrothermal Synthesis and Properties of Diluted Magnetic Semiconductor Zn1-xMnxO Nanowires

7. Structural characterization and electron-energy-loss spectroscopic study of pulsed laser deposited LiNbO3 films on a-sapphire

8. Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 angstrom

9. Negative Photoconductivity and Memory Effects of Germanium Nanocrystals Embedded in HfO2 Dielectric

10. A highly sensitive PVC membrane iodide electrode based on complexes of mercury(II) as neutral carrier

11. Fabrication and magnetic behaviour of superconductor nanowire arrays

13. Effects of epoxy/hardener stoichiometry on structures and properties of a diethanolamine-cured epoxy encapsulant

14. The Effect of Dose of H and He Sequential Implantation in Germanium

18. Survey of excited state neutron spectroscopic factors for Z=8-28 nuclei

19. [Determination of elemenyl piperidine salt in water by capillary gas chromatography]

20. EXPERIMENTAL INVESTIGATION ON INITIAL DISTURBANCES IN PULSATING PIPE FLOWS

21. BARIUM STRONTIUM ZIRCONATE TITANATE (BSZT) THIN FILMS FOR OPTICAL WAVEGUIDE APPLICATIONS.

22. Electron Beam Induced Light Emission and Charge Conduction Patterning in ZnO by Using an AlOx LayerThis research was supported by the Chinese University of Hong Kong through RGC Competitive Earmarked Research Grants (CUHK1101/99E, CUHK1157/01E, and CUHK 402004) and the Direct Grant (2 060 218). Supporting Information is available online from Wiley InterScience or from the author.

24. Visible-light enhanced charge storage characteristics of amorphous Ni-doped HfO2 films.

25. An ultralight and thin metasurface for radar-infrared bi-stealth applications.

27. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures.

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