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1. The effects of polyculture on behaviour and production of pikeperch in recirculation systems

Author

M. Thomas, T. Lecocq, C. Abregal, S. Nahon, J. Aubin, C. Jaeger, A. Wilfart, L. Schaeffer, Y. Ledoré, L. Puillet, and A. Pasquet

Subjects
Polyculture, RAS, Biomass gain, Interindividual relationships, Group structure, Aquaculture. Fisheries. Angling, SH1-691
Abstract

Recirculating aquaculture systems (RASs) are seen as a promising technology to address the societal and environmental challenges of aquaculture. However, this technology is mainly used in intensive monoculture and little knowledge is available in polyculture approaches. In this study, we studied survival, growth performance, and behaviour of juvenile pikeperch Sander lucioperca reared in RAS either in monoculture or in polyculture (associated with sterlet Acipenser ruthenus or tench Tinca tinca or both sterlet and tench). After 30 days, the survival rate was 100 % for both monoculture and polyculture reared pikeperch. The mean final weights and the biomass gain of pikeperch were significantly lower for pikeperch alone (respectively 75.7 ± 2.7 g and 25.2 %) or with sterlet (respectively 81.0 ± 3.2 g and 38.3 %) than in combination with tench (respectively 85.7 ± 8.1 g and 50.1 %) or with sterlet and tench (respectively 90.3 ± 16.4 g and 51.5 %). Behavioural changes were also detected depending on the fish combination: there are fewer interactions between individuals of pikeperch when reared alone (0.34 ± 0.10) or in polyculture with sterlet (0.40 ± 0.02) in comparison to the other polyculture conditions (with tench [0.80 ± 0.20], or the two other species [0.70 ± 0.15]). The group structure also differed with a lower cohesion and homogeneity of the pikeperch group when they were reared in monoculture compared to polyculture modalities. No aggressive interaction was detected between pikeperch regardless of rearing modalities. In conclusion, due to positive effects on growth parameters and few behavioural changes in pikeperch, this study highlights that RAS polyculture is a relevant alternative production strategy for pikeperch compared to monoculture.

Published
2020
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2. Sustainability of fish pond culture in rural farming systems of Central and Western Cameroon

Author

T. Efole Ewoukem, O. Mikolasek, J. Aubin, M. Tomedi Eyango, V. Pouomogne, and D. Ombredane

Subjects
tilapia, fish pond, farming system, household farm, typology, cameroon, Agriculture
Abstract

In Sub-Saharan Africa, fish ponds are often an integral part of farming systems but have suffered from a lack of viability and sustainability. The present study aims to understand the strategies used by fish farmers to overcome economic and environmental constraints. In 2008 and 2009, fish farmers were surveyed in Central and Western Cameroon, and the fish production systems were classified by cluster analysis. Four broad types were identified according to the complexity of household operations. The development of extensive systems (large-scale and low-input) in rural areas of central Cameroon is induced mainly by abundant available land. For semi-intensive systems in both regions (small-scale and high-input in the Western Region, large-scale and high-input in peri-urban areas of the Central Region), horizontal integration is not sufficient to make fish production profitable and sustainable. More intensive fish farms tend towards vertical integration, in which farmers establish close links with input suppliers. Main causes of low productivity of semi-intensive systems (1–2 t/ha/yr) are both lack of knowledge of fish farming principles by farmers and lack of technical improvement by extension agents and researchers which need to consider the local complexity of farming systems to develop and intensify fish production. The adaptation of development strategies to socio-economic and environmental contexts is a necessity to hope for an increase in fish pond aquaculture production in Africa.

Published
2017
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3. L’évaluation multicritère des systèmes d’élevage pour accompagner leurs évolutions : démarches, enjeux et questions soulevées

Author

J. LAIREZ, P. FESCHET, R. BOTREAU, C. BOCKSTALLER, L. FORTUN-LAMOTHE, I. BOUVAREL, and J. AUBIN

Subjects
Animal culture, SF1-1100, Aquaculture. Fisheries. Angling, SH1-691
Abstract

L’apparition de la notion de développement durable a conduit à un passage des évaluations orientées selon un seul critère vers des évaluations plus intégrées couvrant différentes dimensions de la performance des élevages : l’économie, le social, le sanitaire, le bien être, l’environnement. De nombreuses questions méthodologiques sont posées par la confrontation de ces différentes dimensions avec leurs échelles de mesure propres. Comment accompagner l’évolution des systèmes d’élevage avec une évaluation multicritère ? Comment bien définir les finalités de l’évaluation ? Comment gérer la multiplicité des informations ? Comment interpréter un ensemble d’indicateurs conjointement lorsqu’ils prennent des valeurs opposées ? Quels outils mobiliser ? Faut-il utiliser ou créer ses propres outils d’évaluation ? L’élevage avec ses enjeux multiples qui s’étagent entre les niveaux des ateliers, des filières et des territoires est particulièrement concerné par ces questions. La participation des acteurs dans la démarche d’évaluation est aussi une question à trancher, sont-ils co-concepteurs de la méthode, validateurs, enquêtés ou seulement destinataires des résultats ? Ces différents éléments conduiront à définir les meilleures méthodes de traitement mathématique des données. Ce traitement des données est intimement lié au mode de représentation des résultats et de leur utilisation. Cet article aborde les différents usages des évaluations multicritères appliquées aux systèmes d’élevage et les points méthodologiques clefs à respecter.

Published
2018
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4. Conception et évaluation d’un système innovant de production de foie gras : le cas de la substitution du maïs par du sorgho chez l’oie

Author

J. ARROYO, J. AUBIN, A. AUVERGNE, J.P. DUBOIS, M. BRACHET, x. FERNANDEZ, P. DEBAEKE, and L. FORTUN-LAMOTHE

Subjects
Animal culture, SF1-1100, Aquaculture. Fisheries. Angling, SH1-691
Abstract

Cet article présente le déroulement d’une démarche d’éco-conception pour proposer des innovations permettant de réduire les impacts environnementaux de la production de foie gras d’oie. Une Analyse de Cycle de Vie portant sur l’itinéraire standard de production du foie gras d’oie français a permis de montrer que l’alimentation explique la majeure partie des impacts environnementaux de ce produit (plus de 50% en moyenne) et qu’elle représente donc le levier d’action le plus pertinent. Plusieurs expérimentations ont été réalisées afin d’évaluer les possibilités d’utilisation du sorgho, la réponse du système biologique par rapport à l’utilisation du maïs, et les conséquences sur la durabilité environnementale à l’échelle du cycle de vie du produit jusqu’à la sortie de l’abattoir et sur la durabilité économique et sociale à l’échelle de l’exploitation, d’une substitution du maïs par du sorgho dans la ration alimentaire des oies. Les travaux montrent qu’une substitution totale du maïs par du sorgho dans la ration alimentaire est techniquement possible. Elle réduit la plupart des impacts environnementaux de la fabrication d’1 kg de foie gras (potentiel de réchauffement climatique : - 18%, potentiel d’acidification : -12%, utilisation d’énergie primaire : - 23%, utilisation de la ressource en eau : - 62%) et améliore de nombreux indicateurs de performances de durabilité économique, tel que l’indice de consommation (- 9,4%) ou le poids de foie (+ 13%). Cependant certains indicateurs économiques et sociaux sont dégradés, tels que l’intention de consommer à nouveau le produit (- 17 pts) en raison d’un foie de couleur plus pâle, et l’augmentation de la mortalité en gavage (+ 4,6 pts). L’ensemble des résultats suggère que l'utilisation du sorgho dans l’alimentation des oies peut améliorer la durabilité de la production de foie gras. Plusieurs ajustements dans l’itinéraire de production sont nécessaires pour optimiser l’utilisation de cette matière première.

Published
2013
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5. Des aliments à base de végétaux pour les poissons d’élevage

Author

F. MÉDALE, R. LE BOUCHER, M. DUPONT-NIVET, E. QUILLET, J. AUBIN, and S. PANSERAT

Subjects
Animal culture, SF1-1100, Aquaculture. Fisheries. Angling, SH1-691
Abstract

L'aquaculture mondiale se développe (+ 8% par an) pour répondre à une demande croissante des consommateurs que les captures de pêche ne peuvent plus couvrir. Les besoins en aliments piscicoles et donc en matières premières s’accroissent, alors que les volumes de farines et huiles de poisson, ingrédients traditionnels des aliments aquacoles, ne peuvent augmenter. Selon les espèces, 80 à 95% de la farine de poisson peut être substituée par un mélange de sources protéiques végétales apportant les acides aminés indispensables en quantité suffisante pour couvrir les besoins des poissons. Au-delà de ce taux de remplacement, on observe une baisse de la consommation d'aliment, de l'efficience alimentaire et de la croissance, bien que les aliments contiennent les nutriments nécessaires aux poissons. Quant à l'huile de poisson, elle peut être remplacée jusqu’à 80 ou 100% par des huiles végétales sans effet délétère sur la croissance et la santé des poissons, à condition que le régime apporte en quantité suffisante les acides gras essentiels à la couverture des besoins, qui diffèrent selon l'espèce : contrairement aux poissons marins, les salmonidés disposent en effet d’une relative capacité de synthèse d’acides gras longs polyinsaturés omega 3 à partir de l’acide linoléique. La conséquence majeure est une baisse de la teneur de ces acides gras dans la chair. Les recherches doivent se poursuivre pour affranchir encore davantage l'aquaculture des produits de la pêche, en choisissant des matières premières alternatives qui garantissent une production piscicole efficace, des produits de haute qualité et des impacts environnementaux limités.

Published
2013
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6. La méthode EMERGY : principes et application en analyse environnementale des systèmes agricoles et de production animale

Author

A. WILFART, M.S. CORSON, and J. AUBIN

Subjects
Animal culture, SF1-1100, Aquaculture. Fisheries. Angling, SH1-691
Abstract

L’Emergy est définie comme la somme de toutes les formes d’énergie (énergie directe et indirecte, renouvelable et non-renouvelable) nécessaire à la réalisation d’un service ou d’un produit. La méthode d’évaluation Emergy est une méthode d’analyse quantitative qui détermine la valeur non-monétaire et monétaire des ressources, des services et des produits dans une unité commune : l’Emergy solaire. Cette méthode apparaît comme intéressante pour évaluer les agro-écosystèmes et identifier des leviers d’action pour la conception de systèmes plus durables. Cet article présente les concepts de la méthode Emergy en explicitant les notions clés telles que la transformité, le diagramme de hiérarchisation de l’énergie et les indicateurs Emergy. Ces notions sont explicitées en se basant sur l’exemple d’une analyse de la production de poissons en étang. Enfin, l’article détaille les applications possibles de la méthode pour les systèmes agricoles et notamment en production animale.

Published
2012
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7. Conception et évaluation de systèmes d’élevage durables en régions chaudes

Author

B. DEDIEU, J. AUBIN, G. DUTEURTRE, G. ALEXANDRE, J. VAYSSIERES, P. BOMMEL, B. FAYE, M. MAHIEU, A. FANCHONE, J.F. TOURRAND, and A. ICKOWICZ

Subjects
Animal culture, SF1-1100, Aquaculture. Fisheries. Angling, SH1-691
Abstract

Les démarches de conception et d’évaluation de systèmes d’élevage innovants en régions chaudes doivent prendre en compte les spécificités de ces systèmes. Outre les caractéristiques des milieux, ces spécificités tiennent à l’importance des fonctions non productives des troupeaux et à la complexité des modes de gestion de l’accès aux ressources (mobilité notamment). Nous discutons les démarches de conception en utilisant les notions de cristallisation, de plasticité et de développement des systèmes innovants et présentons les bases de l’évaluation (environnementale, filière, technico-économique) et ses fonctions dans le processus de conception. Nous illustrons la conception réglée ou innovante appuyée sur de la modélisation à l’aide d’exemples aux Antilles (élevage caprin, polyculture-élevage, avec une composante biotechnique forte), à la Réunion (élevage laitier avec une démarche participative de construction du modèle avec les agriculteurs) et en Amazonie (composante décisionnelle incluant les équilibres et interaction entre activités d’élevage et culture - démarche participative avec les acteurs territoriaux). La diversité des cas souligne les enjeux de la conception et de l’évaluation : prise en compte de la diversité des systèmes dans leurs composantes techniques et humaines, participation des acteurs à la démarche, développements biotechniques et clarification des processus décisionnels, réflexion sur des indicateurs adaptés et pertinents pour les éleveurs et les territoires dans lesquels ils s’insèrent.

Published
2011
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8. [Alcohol and atrial fibrillation]

Author

H J, Aubin, N, Bouajila, D, Thomas, and M, Naassila

Subjects
Alcohol Drinking, Ethanol, Risk Factors, Atrial Fibrillation, Humans
Abstract

Atrial fibrillation (AF) is the most common heart rhythm disorder, with an increasing prevalence, currently estimated at 3 % of the world population. It has long been well known, as the holiday heart syndrome, that acute alcohol consumption (binge drinking) may trigger an episode of AF, most often benign, during or immediately after consumption. Meta-analyses of observational studies have clearly shown a significant association between a high level of alcohol consumption and the risk of AF. According to the studies included in meta-analyses, the conclusions may differ regarding the association between low and moderate levels of alcohol consumption and the risk of AF. The association probably only exists from a level of consumption of at least one drink per day. Heavy alcohol consumption appears to increase the risk of complications in patients with AF, while light or moderate alcohol consumption does not. The causal nature of the relationship between alcohol consumption and AF cannot currently be confirmed or denied, given the contradictory results of Mendelian randomization studies published to date. However, in patients diagnosed with AF, the recommendation to abstain from alcohol, resulting in a strong reduction in consumption, made it possible to significantly reduce the recurrence of AF episodes.: La fibrillation auriculaire (FA) est le trouble du rythme cardiaque le plus fréquent, avec une prévalence croissante, actuellement estimée à 3 % de la population mondiale. La consommation aiguë d’alcool («binge drinking») est susceptible de déclencher un épisode de FA, le plus souvent bénin, au cours ou au décours immédiat de la consommation. Les méta-analyses d’études observationnelles ont clairement montré une association significative entre un niveau élevé de consommation d’alcool et le risque de FA. Selon les études incluses dans les méta-analyses, les conclusions peuvent différer concernant l’association entre les niveaux faibles et modérés de consommation d’alcool et le risque de FA. L’association n’existe vraisemblablement qu’à partir d’un niveau de consommation d’au moins 1 verre par jour. Une forte consommation d’alcool semble augmenter le risque de complications chez les patients atteints de FA, contrairement à une consommation faible ou modérée. La nature causale de la relation entre la consommation d’alcool et la FA ne peut actuellement être ni confirmée ni infirmée, compte-tenu des résultats contradictoires des études de randomisation mendélienne publiées à ce jour. En revanche, chez des patients diagnostiqués avec une FA, la recommandation de s’abstenir d’alcool, résultant en une forte réduction de la consommation, a permis de réduire significativement les récurrences de FA.

Published
2022

9. Effect of production quotas on economic and environmental values of growth rate and feed efficiency in sea cage fish farming.

Author

M Besson, I J M de Boer, M Vandeputte, J A M van Arendonk, E Quillet, H Komen, and J Aubin

Subjects
Medicine, Science
Abstract

In sea cage fish farming, production quotas aim to constrain the impact of fish farming on the surrounding ecosystem. It is unknown how these quotas affect economic profitability and environmental impact of genetic improvement. We combined bioeconomic modelling with life cycle assessment (LCA) to calculate the economic (EV) and environmental (ENV) values of thermal growth coefficient (TGC) and feed conversion ratio (FCR) of sea bass reared in sea cages, given four types of quota commonly used in Europe: annual production (Qprod), annual feed distributed (Qannual_feed), standing stock (Qstock), and daily feed distributed (Qdaily_feed). ENV were calculated for LCA impact categories climate change, eutrophication and acidification. ENV were expressed per ton of fish produced per year (ENV(fish)) and per farm per year (ENV(farm)). Results show that irrespective of quota used, EV of FCR as well as ENV(fish) and ENV(farm) were always positive, meaning that improving FCR increased profit and decreased environmental impacts. However, the EV and the ENV(fish) of TGC were positive only when quota was Qstock or Qdaily_feed. Moreover, the ENV(farm) of TGC was negative in Qstock and Qdaily_feed quotas, meaning that improving TGC increased the environmental impact of the farm. We conclude that Qstock quota and Qdaily_feed quota are economically favorable to a genetic improvement of TGC, a major trait for farmers. However, improving TGC increases the environmental impact of the farm. Improving FCR represents a good opportunity to balance out this increase but more information on its genetic background is needed to develop breeding programs improving FCR.

Published
2017
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10. Progress in Germanium Tin (GeSn) Photonic Crystal Lasers

Author

Quang Minh Thai, Vincent Calvo, Jean-Michel Hartmann, Jérémie Chrétien, Alexei Chelnokov, Lara Casiez, Vincent Reboud, Mathieu Bertrand, J. Aubin, Nicolas Pauc, Silicon Nanoelectronics Photonics and Structures (SiNaps), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
[PHYS]Physics [physics], Materials science, business.industry, Physics::Optics, chemistry.chemical_element, Germanium, Laser, Atomic and Molecular Physics, and Optics, law.invention, Optical pumping, [SPI]Engineering Sciences [physics], chemistry, law, Density of states, Optoelectronics, Electrical and Electronic Engineering, Photonics, business, Tin, Lasing threshold, Photonic crystal
Abstract

We report on lasing in two types of Germanium-Tin (GeSn) photonic crystal lasers, with band-edge and H4 hexagonal cavities. A GeSn 16% step-graded structure was used as the optical gain material. The strong out-of-plane emission observed in the band-edge cavity was attributed to the thick optical gain layer, in addition with the presence of leaky band-edge modes above the light cones and a high photonic density of states. The maximum lasing temperature in both types of photonic crystal lasers, 180 K, was lower than in a micro-disk laser fabricated from the same stack, i.e., 230 K. Meanwhile, the lasing thresholds at low temperature (15 K) were very similar (120 kW/cm2 for a band-edge cavity and 140 kW/cm2 for a H4 cavity, to be compared with 134 kW/cm2 for a micro-disk cavity). Since the injected carrier density is governed by the pump power, we suggest the strong variation of optical gain at low temperature, for a small variation of injected carrier density, as a possible cause of such a phenomenon.

Published
2022

11. Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers

Author

T. T. Nguyen, Jean-Paul Barnes, A.M. Papon, Filadelfo Cristiano, Nicolas Bernier, Vincent Delaye, J. Aubin, J.M. Hartmann, Sebastien Kerdiles, P. Acosta-Alba, L. Dagault, Patrice Gergaud, Adeline Grenier, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées

Subjects
010302 applied physics, Materials science, business.industry, Annealing (metallurgy), 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, Electronic, Optical and Magnetic Materials, [SPI]Engineering Sciences [physics], 0103 physical sciences, Optoelectronics, Nanosecond laser, 0210 nano-technology, business
Abstract

International audience; Ultraviolet Nanosecond Laser Annealing (UV-NLA) was performed on 30 nm-thick Si0.8Ge0.2 epitaxial layers. The various regimes encountered, depending on the melt depth after single pulse UV-NLA, are described and discussed in this paper. Energy densities around 2.00 J/cm(2) and above led to the formation of pseudomorphic layers with a strong Ge redistribution. Starting from uniform Si0.8Ge0.2 layers, Ge segregation toward the surface resulted in the formation of a Ge-rich surface layer with up to 55 at.% Ge for 2.00 J/cm(2). Such pseudomorphic SiGe layers with a graded composition and a Ge-rich surface may find promising applications such as contact resistance lowering in doped layers.

Published
2019

12. An innovative combination of cypropheptadine and prazosin for the treatment of alcohol use disorder: a double-blind, randomised, parallel-group, three-arm, multicentre, placebo-controlled phase 2 trial

Author

H.-J. Aubin and A. Puech

Subjects
Psychiatry and Mental health
Abstract

Introduction Animal studies have shown that the simultaneous blockade of α1b-noradrenergic receptors and 5HT2A-serotonergic receptors strongly decreases alcohol intake. In addition, recent clinical studies have indicated that the selective α1b antagonist prazosin could be effective on alcohol use reduction in alcohol-dependent subjects. Objectives Cocktail is a double-blind, randomised, parallel-group, three-arm, multicentre, placebo-controlled phase 2 proof-of-concept study aiming at demonstrating the superiority of a 12-week treatment with the KT110 combination of cyproheptadine (8 mg/day or 12 mg/day) and prazosin (5 mg/day or 10 mg/day) over placebo on the reduction of total alcohol consumption. Methods The study two main inclusion criteria are a DSM5 diagnosis of severe alcohol use disorder and a WHO high-risk drinking risk level. The primary endpoint is the change from baseline (4 weeks preceding randomization) to the end of treatment (Weeks 9-12) in the mean quantity of alcohol consumed per day in the three groups. Daily alcohol consumption is determined using the Timeline Follow Back, automatically be filled in on the basis electronic patient reported outcomes platform. The 12-week treatment period is followed by a 4-week post-treatment follow-up. Results One hundred and eighty patients are planned to be randomized 1:1:1 into the two treatment groups. Enrollment of patients started in November 2019, and will end in July 2021. Conclusions In this communication, we will present the rationale for the development of the KT110 combination of cypropheptadine and prazosin for the treatment of alcohol use disorders, as well as the main features of the Coctkail study. ClinicalTrials.gov identifier: NCT04108104. Disclosure Member of advisory boards, DSMB, or steering committees, speaker honoraria or consultancy for Bioprojet, D&A Pharma Ethypharm, and Kinnov Pharmaceuticals, Lundbeck, and Pfizer D&A Pharma, Ethypharm, Kinnov Pharmaceuticals, Lundbeck, and Pfizer.

Published
2022

13. [Motivational interviewing : a useful technique for both smoking cessation and periodontal interventions]

Author

O, Gondel, S, Jungo, and H J, Aubin

Subjects
Communication, Chronic Disease, Smoking, Humans, Smoking Cessation, Motivational Interviewing
Abstract

Tobacco is a risk factor for many chronic diseases and is the leading cause of preventable death. In the same way, periodontal diseases are one of the main chronic inflammatory diseases. The significant positive association between smoking and a higher risk of periodontitis is not any more to show and it appears that if smoking would be eliminated in this population, the risk of periodontitis would be reduced by approximately 14 %. Thus, the management of smoking cessation as well as periodontal treatment have become a public health issue. Motivational interviewing is a method of communication to support the change of health behaviour. The periodontist is then in the first position to set up a motivational interview in conjunction with smoking cessation and periodontal therapy. The taking into account of the risk factors among which tobacco is a stake for the restoration and the maintenance of periodontal health. Published evidence suggests that smoking cessation interventions are effective, highlighting the need for behavioural support in periodontal care. Motivational interviewing becomes an important part of both periodontal and smoking treatment.Le tabac est un facteur de risque commun à nombreuses maladies chroniques; c’est la première cause de mortalité évitable. Les maladies parodontales sont l’une des principales maladies inflammatoires chroniques. L’association du tabagisme à une augmentation du risque de parodontite est bien démontrée; on estime que si le tabagisme était éliminé dans cette population, le risque de parodontite serait réduit d’environ 14 %. La prise en charge du sevrage tabagique, comme du traitement parodontal, est devenue un enjeu de santé publique. L’entretien motivationnel est une approche psychologique visant à engager les personnes dans le changement de comportement en matière de santé. Le parodontiste a une position idéale pour mettre en place un entretien motivationnel visant conjointement le sevrage tabagique et la thérapeutique parodontale. La prise en compte des facteurs de risque, dont le tabac, est un enjeu pour la restauration et le maintien de la santé parodontale. Les données publiées suggèrent que les interventions pour la cessation du tabagisme sont efficaces, soulignant ainsi la nécessité d’un soutien comportemental dans les soins parodontaux. L’entretien motivationnel devient une part importante du traitement, à la fois parodontal et tabagique.

Published
2021

14. Solid phase recrystallization induced by multi-pulse nanosecond laser annealing

Author

Sylvain Perrot, Fulvio Mazzamuto, Pablo Acosta Alba, Sebastien Kerdiles, J. Aubin, and Adeline Grenier

Subjects
Recrystallization (geology), Materials science, Silicon, Annealing (metallurgy), business.industry, chemistry.chemical_element, Surfaces and Interfaces, Dopant Activation, Laser, Surfaces, Coatings and Films, law.invention, Crystal, chemistry, lcsh:Industrial electrochemistry, law, Phase (matter), Surface roughness, lcsh:TA401-492, Optoelectronics, lcsh:Materials of engineering and construction. Mechanics of materials, business, lcsh:TP250-261
Abstract

The solid phase recrystallization of partially amorphized SOI structures using a pulsed Ultra-Violet Nanosecond Laser Annealing (UV-NLA) is reported. It is shown that combining UV-NLA process with a heating chuck at low temperature (450 °C) results in the perfect recrystallization of the amorphized portion of the silicon layer. Actually, sub-melt multi-pulse UV-NLA enables obtaining the total crystal recovery and a very high dopant activation rate, comparable to melt laser annealing approaches or high temperature rapid thermal annealing, with a very low overall thermal budget. This approach is a great alternative to traditional solid phase epitaxial regrowth process, which reach it limits, in terms of recrystallization rate, at temperatures lower than 500 °C. The process presented here is thus suitable for integration paths in which the thermal budget must be limited as for example 3D sequential integration. Besides the high activation rate, another benefit of the solid phase recrystallization, compared to an equivalent laser anneal in the melt regime, is the almost unchanged surface roughness. Furthermore, the use of an in-situ metrology based on Time Resolved Reflectometry (TRR) enables the monitoring of the crystalline seed thickness evolution during UV-NLA and the estimation of the recrystallization rate.

Published
2021

15. Smooth plasma etching of GeSn nanowires for gate-all-around field effect transistors

Author

E. Eustache, Bassem Salem, M. A. Mahjoub, Youssouf Guerfi, Jean-Michel Hartmann, J. Aubin, S. David, Sébastien Labau, Franck Bassani, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
Materials science, Nanowire, plasma etching, 02 engineering and technology, 01 natural sciences, chemistry.chemical_compound, X-ray photoelectron spectroscopy, 0103 physical sciences, Materials Chemistry, XPS, Electrical and Electronic Engineering, Reactive-ion etching, Semiconductor Science and Technology germanium-tin nanowire, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Anisotropy, Hydrogen silsesquioxane, 010302 applied physics, Plasma etching, business.industry, germanium-tin nanowire, GAA-FET, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, Field-effect transistor, Inductively coupled plasma, 0210 nano-technology, business
Abstract

We report on the nanopatterning of horizontal and vertical germanium-tin (Ge1−x Sn x or GeSn) nanowires by inductively coupled plasma reactive ion etching for gate-all-around field effect transistors. First, a chlorine based chemistry has been investigated and optimal conditions identified for GeSn 6% alloys. Then, plasma etching was optimized to etch high Sn content GeSn alloys (up to 15%) with a high anisotropy, smooth sidewalls and a high selectivity versus a hydrogen silsesquioxane hard mask. We have shown that, in order to obtain smooth surfaces after plasma etching, a HCl pre-treatment was mandatory to eliminate the native Sn and Ge oxides. This behavior was even more pronounced for high Sn contents. Finally, we succeeded in patterning 20 nm wide suspended beams from GeSn layers with Sn concentrations up to 15%.

Published
2021

16. Ni/GeSn solid-state reaction monitored by combined X-ray diffraction analyses: focus on the Ni-rich phase

Author

Jean-Michel Hartmann, Patrice Gergaud, J. Aubin, Philippe Rodriguez, Andrea Quintero, and Vincent Reboud

Subjects
010302 applied physics, In situ, Diffraction, Materials science, Analytical chemistry, 02 engineering and technology, Pole figure, 021001 nanoscience & nanotechnology, 01 natural sciences, General Biochemistry, Genetics and Molecular Biology, Reciprocal lattice, Phase (matter), Metastability, 0103 physical sciences, X-ray crystallography, 0210 nano-technology, Focus (optics)
Abstract

The Ni/Ge0.9Sn0.1 solid-state reaction was monitored by combining in situ X-ray diffraction, in-plane reciprocal space map measurements and in-plane pole figures. A sequential growth was shown, in which the first phase formed was an Ni-rich phase. Then, at 518 K, the mono-stanogermanide phase Ni(Ge0.9Sn0.1) was observed. This phase was stable up to 873 K. Special attention has been given to the nature and the crystallographic orientation of the Ni-rich phase obtained at low temperature. It is demonstrated, with in-plane pole figure measurements and simulation, that it was the ɛ-Ni5(Ge0.9Sn0.1)3 metastable phase with a hexagonal structure.

Published
2018

17. Composition and Strain Evolution of Undoped Si0.8Ge0.2 Layers Submitted to UV-Nanosecond Laser Annealing

Author

Adeline Grenier, Jean-Paul Barnes, Fuccio Cristiano, Than Tra Nguyen, Jean-Michel Hartmann, Pablo Acosta-Alba, Patrice Gergaud, Lea Dagault, Sebastien Kerdiles, and J. Aubin

Subjects
Materials science, Annealing (metallurgy), Analytical chemistry, Nanosecond laser
Abstract

For CMOS scaling beyond 10 nm technology node, high active dopant concentrations in sources and drains are required to minimize contact resistance. Given its ability to reach high temperatures with extremely fast ramps, pulsed laser annealing is used in PMOS and NMOS transistors fabrication to obtain highly doped SiGe:B [1] and Si:P [2] regions. However, there are still few studies on the impact of nanosecond laser annealing on SiGe. We have thus investigated the behavior of thin, pseudomorphic Si0.8Ge0.2 layers submitted to ultraviolet nanosecond laser annealing in a wide range of laser energy densities. Undoped, 30 nm thick pseudomorphic Si0.8Ge0.2 layers were grown at 550°C on (100) Si substrates in a Reduced Pressure CVD reactor. They were subsequently laser annealed in a SCREEN LT-3100 platform operating at 308 nm with a 160 ns pulse duration. The laser energy density was increased from 1.40 up to 2.40 J/cm² in order to investigate various regimes, from SiGe layer sub-melt to a point at which the whole SiGe layer and part of the Si substrate reach the melt. Time Resolved Reflectometry (TRR) and SP2 haze measurements combined with Atomic Force Microscopy (AFM) were used to detect melt threshold and quantify surface roughness evolutions, respectively. High Resolution X-Ray Diffraction and Time-Of-Flight-Secondary Ions Mass Spectrometry characterizations were performed to assess layer composition, strain and crystalline quality as a function of the laser energy density. Melt threshold was detected at 1.55 J/cm² with SP2 Haze measurements (Fig.2) and at 1.58 J/cm² by TRR (Fig. 1). When increasing the laser energy density, three different regimes were identified. In the sub-melt regime, i.e. at energy densities lower than 1.55 J/cm², the annealed samples showed neither surface nor volume differences compared to the as-grown sample. For higher energy densities, part of the Si0.8Ge0.2 layer melted. At first, the melt remained very shallow: TOF-SIMS at 1.59 J/cm² (Fig.3) and Reciprocal Space Map (RSM, not shown here) were identical to those for the reference sample. However, a strong increase in haze and roughness indicated that the surface was modified. For a deeper melt (annealing at 1.8 J/cm²), the germanium was redistributed over the melted depth and segregated towards the surface, creating a top layer with a higher germanium concentration (cf. Fig.3). The solidification and segregation were accompanied by a partial relaxation of the layer up to 25% (the SiGe layer peak in Fig. 4.b is broadened due to mosaicity and not at the same Qx coordinate than that of the Si substrate) while the surface stayed rough. At higher energy density values, for instance 2.0 J/cm² (still in the partial melt regime), germanium segregation still occured and resulted in an even higher germanium concentration near the surface, up to 40%. However, the quality of the layer strongly improved compared to that of the 1.8 J/cm² sample. Roughness and haze were indeed much lower and close to their initial level. The RSM in Fig.4.c indicates that the layer is pseudomorphic, with a rather good crystalline quality, which will be further assessed by TEM observations. This sub-regime with strained SiGe layers exhibiting a high concentration of germanium near the surface could be favorable to the formation of low-resistance contacts in in-situ doped layers [2]. For higher energy densities, the whole SiGe layer and part of the Si substrate were melted: we were then in the full melt regime. For an annealing at 2.4 J/cm², the deeper melt and the intermixing resulted in the formation of a pseudomorphic 85 nm-thick Si0.93 Ge0.07 layer, with an almost uniform germanium profile. The film seems to have a very good crystalline quality as seen in Fig.4.d while RSM, Roughness and haze values were similar to those of the as-grown sample. It is therefore possible, by selecting the appropriate energy densities, to form pseudomorphic SiGe layers with a high germanium content near the surface, which would be favorable for electrical contact formation. Among all the annealing regimes, it seems to be the most promising one for further investigations with doped layers. References [1] Ni C.-N. et al., Proceedings of symposium on VLSI Technology (2016) 7480531. [2] Rosseel E. et al., ECS Transactions, 75 (8) 347-359 (2016) Figure 1

Published
2018

18. Assessment of the growth/etch back technique for the production of Ge strain-relaxed buffers on Si

Author

J.M. Hartmann, J. Aubin, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
010302 applied physics, Materials science, Analytical chemistry, Surface structure, Heterojunction, 02 engineering and technology, Temperature cycling, Surface finish, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Chemical vapor deposition processes, Inorganic Chemistry, [SPI]Engineering Sciences [physics], Hysteresis, Etching (microfabrication), 0103 physical sciences, Materials Chemistry, Germanium silicon alloys, Stresses, Defects, Wafer, Dislocation, 0210 nano-technology
Abstract

International audience; Thick Ge layers grown on Si(0 0 1) are handy for the production of GeOI wafers, as templates for the epitaxy of III-V and GeSn-based heterostructures and so on. Perfecting their crystalline quality would enable to fabricate suspended Ge micro-bridges with extremely high levels of tensile strain (for mid IR lasers). In this study, we have used a low temperature (400 degrees C)/high temperature (750 degrees C) approach to deposit with GeH4 various thickness Ge layers in the 0.5 mu m - 5 mu m range. They were submitted afterwards to short duration thermal cycling under H-2 (in between 750 degrees Cand 875-890 degrees C) to lower the Threading Dislocation Density (TDD). Some of the thickest layers were partly etched at 750 degrees C with gaseous HCl to recover wafer bows compatible with device processing later on. X-ray Diffraction (XRD) showed that the layers were slightly tensile-strained, with a 104.5-105.5% degree of strain relaxation irrespective of the thickness. The surface was cross-hatched, with a roughness slightly decreasing with the thickness, from 2.0 down to 0.8 nm. The TDD (from Omega scans in XRD) decreased from 8 x 10(7) cm(-2) down to 10(7) cm(-2) as the Ge layer thickness increased from 0.5 up to 5 mu m. The lack of improvement when growing 5 mu m thick layers then etching a fraction of them with HCl over same thickness layers grown in a single run was at variance with Thin Solid Films 520, 3216 (2012). Low temperature HCl defect decoration confirmed those findings, with (i) a TDD decreasing from slightly more 10(7) cm(-2) down to 5 x 106 cm(-2) as the Ge layer thickness increased from 1.3 up to 5 mu m and (ii) no TDD hysteresis between growth and growth then HCl etch-back.

Published
2018

19. Method validation for assay determination of cannabidiol isolates

Author

Catharine E. Layton and Andrew J. Aubin

Subjects
Chromatography, biology, Chemistry, medicine.medical_treatment, 010401 analytical chemistry, Clinical Biochemistry, Pharmaceutical Science, 02 engineering and technology, biology.organism_classification, 01 natural sciences, Biochemistry, 0104 chemical sciences, Analytical Chemistry, 020401 chemical engineering, medicine, sense organs, Cannabinoid, Cannabis, 0204 chemical engineering, skin and connective tissue diseases, Cannabidiol, medicine.drug
Abstract

The speed at which regulations have changed in the cannabis marketplace has increased the pressure for accurate, easy, and efficient analytical methodology. Purified isolates are used to formulate ...

Published
2018

20. GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge2H6 and SnCl4

Author

J.M. Hartmann and J. Aubin

Subjects
010302 applied physics, Materials science, Analytical chemistry, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Chemical vapor deposition, Activation energy, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Inorganic Chemistry, chemistry.chemical_compound, chemistry, Desorption, 0103 physical sciences, Tetrachloride, Materials Chemistry, Growth rate, Digermane, 0210 nano-technology, Tin
Abstract

We have investigated the low temperature epitaxy of high Sn content GeSn alloys in a 200 mm industrial Reduced Pressure - Chemical Vapor Deposition tool from Applied Materials. Gaseous digermane (Ge2H6) and liquid tin tetrachloride (SnCl4) were used as the Ge and Sn precursors, respectively. The impact of temperature (in the 300–350 °C range), Ge2H6 and SnCl4 mass-flows on the GeSn growth kinetics at 100 Torr has been thoroughly explored. Be it at 300 °C or 325 °C, a linear GeSn growth rate increase together with a sub-linear Sn concentration increase occurred as the SnCl4 mass-flow increased, irrespective of the Ge2H6 mass flow (fixed or varying). The Sn atoms seemed to catalyze H desorption from the surface, resulting in higher GeSn growth rates for high SnCl4 mass-flows (in the 4–21 nm min−1 range). The evolution of the Sn content x with the F ( SnCl 4 ) 2 · F ( Ge 2 H 6 ) mass-flow ratio was fitted by x 2 ( 1 - x ) = n · F ( SnCl 4 ) 2 · F ( Ge 2 H 6 ) , with n = 0.25 (325 °C) and 0.60 (300 °C). We have otherwise studied the impact of temperature, in the 300–350 °C range, on the GeSn growth kinetics. The GeSn growth rate exponentially increased with the temperature, from 15 up to 32 nm min−1. The associated activation energy was low, i.e. Ea = 10 kcal mol−1. Meanwhile, the Sn content decreased linearly as the growth temperature increased, from 15% at 300 °C down to 6% at 350 °C.

Published
2018

21. Impact of thickness on the structural properties of high tin content GeSn layers

Author

J. Aubin, Vincent Calvo, Vincent Reboud, L. Milord, Alban Gassenq, Nicolas Pauc, J.M. Hartmann, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Silicon Nanoelectronics Photonics and Structures (SiNaps), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
Diffraction, Materials science, Scanning electron microscope, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Chemical vapor deposition, 01 natural sciences, Inorganic Chemistry, chemistry.chemical_compound, symbols.namesake, 0103 physical sciences, Tetrachloride, Materials Chemistry, Surface roughness, Digermane, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, 021001 nanoscience & nanotechnology, Condensed Matter Physics, chemistry, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], symbols, 0210 nano-technology, Tin, Raman spectroscopy
Abstract

We have grown various thicknesses of GeSn layers in a 200 mm industrial Reduced Pressure – Chemical Vapor Deposition cluster tool using digermane (Ge2H6) and tin tetrachloride (SnCl4). The growth pressure (100 Torr) and the F(Ge2H6)/F(SnCl4) mass-flow ratio were kept constant, and incorporation of tin in the range of 10–15% was achieved with a reduction in temperature: 325 °C for 10% to 301 °C for 15% of Sn. The layers were grown on 2.5 µm thick Ge Strain Relaxed Buffers, themselves on Si(0 0 1) substrates. We used X-ray Diffraction, Atomic Force Microscopy, Raman spectroscopy and Scanning Electron Microscopy to measure the Sn concentration, the strain state, the surface roughness and thickness as a function of growth duration. A dramatic degradation of the film was seen when the Sn concentration and layer thickness were too high resulting in rough/milky surfaces and significant Sn segregation.

Published
2017

22. Germanium based photonic components toward a full silicon/germanium photonic platform

Author

Vincent Reboud, Samuel Tardif, Vincent Calvo, Alexei Chelnokov, Kevin Guilloy, Jean-Marc Fedeli, Alban Gassenq, J. Aubin, Nicolas Pauc, Julie Widiez, J.M. Hartmann, Léopold Virot, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Grenoble Alpes (UGA), Silicon Nanoelectronics Photonics and Structures (SiNaps), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), CEA DSM-DRT Phare project 'Photonics', CEA DSM-DRT Phare project 'Operando', IBEA Nanoscience project, CEA-Enhanced Eurotalent project 'Straintronics', Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
Materials science, Silicon, chemistry.chemical_element, Nanotechnology, Germanium, 02 engineering and technology, 01 natural sciences, 7. Clean energy, chemistry.chemical_compound, 0103 physical sciences, Strain engineering, Microelectronics, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Silicon photonics, business.industry, Doping, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Silicon-germanium, Semiconductor, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Photonics, 0210 nano-technology, business, Germanium-Propriétés optiques
Abstract

International audience; Lately, germanium based materials attract a lot of interest as they can overcome some limits inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red sensing applications. The quality of epitaxially grown intrinsic and doped materials is critical to reach the targeted performances. One of the main challenges in the field remains the fabrication of efficient group-IV laser sources compatible with the microelectronics industry, seen as an alternative to the complexity of integration of III-V lasers on Si. The difficulties come from the fact that the group-IV semiconductor bandgap has to be transformed from indirect to direct, using high tensile strains or by alloying germanium with tin. Here, we review recent progresses on critical germanium-based photonic components such as waveguides, photodiodes and modulators and discuss the latest advances towards germanium-based lasers. We show that novel optical germanium-On-Insulator (GeOI) substrates fabricated by the Smart Cut™ technology is a key feature for future Si - Complementary Metal Oxide Semiconductor (CMOS) - compatible laser demonstration. This review hints at a future photonics platform based on germanium and Silicon.

Published
2017

23. Atmospheric Pressure Selective Epitaxial Growth of Heavily In Situ Phosphorous-Doped Si(:C) Raised Sources and Drains

Author

Marie-Pierre Samson, J. Aubin, Jean-Michel Hartmann, Sylvain Barraud, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and STMicroelectronics [Crolles] (ST-CROLLES)

Subjects
Hydrology, 010302 applied physics, In situ, Materials science, Atmospheric pressure, Doping, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, Engineering physics, 01 natural sciences, Electronic, Optical and Magnetic Materials, [SPI]Engineering Sciences [physics], Chemical engineering, Environmental chemistry, 0103 physical sciences, 0210 nano-technology
Abstract

Raising the sources and drains regions of Fully Depleted Silicon-On-Insulator devices is mandatory in order to have enough material for silicidation and obtain low contact resistances. Doping was until the 28 nm technology node carried out using ion implantation. For a variety of reasons, in-situ doping is mandatory in future node transistors, however. We have thus focused on the in-situ phosphorous doping of the Si Raised Sources and Drains (RSDs) used in n-type devices. We have shown in [1] that reduced pressures (e.g. 20 Torr) were harmful in order to obtain at 750°C-800°C high P+ ions concentrations with reasonable Si:P Growth Rates (GR). With SiH2Cl2 + PH3 + HCl, we indeed saturated at [P+] around 1019 cm-3, with a surface poisoning by P atoms that drastically decreased the Si:P GR. Wanting to have a straightforward Si:P co-flow process instead of a more complex Cyclic Deposition/Etch process [2], we have thus studied the in-situ phosphorous doping of Si and Si1-yCy at Atmospheric Pressure (ATM) and in the 700°C – 800°C range. To that end, we have proceeded as follows. In order to gain access to the Si1-yCy:P layer thickness and confirm that layers were indeed single crystalline, we have grown {Si0.8Ge0.2 / Si1-yCy:P} stacks on Si(001) and measured them with X-Ray Reflectivity (which gives access to thickness) and X-Ray Diffraction (crystalline quality assessment), as shown in Figure 1. We have otherwise grown the very same Si1-yCy:P layers on slightly p-type substrates to have pn junctions and determine through four point probe measurements their sheet resistances. Resistivities and thus P+ ions concentrations were extracted by multiplying those by the Si1-yCy:P layer thicknesses (from XRR). We have plotted in Figure 2 the Si:P growth rate and [P+] at 750°C, ATM, this for increasing F(PH3)/F(SiH2Cl2) Mass-Flow Ratios (MFRs). When the SiH2Cl2 mass-flow was fixed, we had a significant increase of the Si:P GR (up to 13.3 nm/min.) and of [P+] (at most 7x1019 cm-3). We have tried to reach higher MFRs by reducing, for the highest PH3 1% in H2 flow deliverable in our tool, the SiH2Cl2 mass-flow. This led to (i) a Si:P growth rate decrease and (ii) to a slight [P+] decrease, instead of the increase hoped for. We have studied in Figure 3 the impact of growth temperature on the Si:P GR and on [P+] for the optimum point of Fig. 2. The activation energy associated with the Si:P growth rate increase with temperature in the 700°C-800°C range was equal to 53 kcal. mol.-1 (e.g. close to the Si-H bond strength), while [P+] was steady at 7x1019 cm-3. We have thus moved over to a PH3 5% in H2 bottle and quantified, at 700°C, ATM, the impact of the PH3 flow on the Si:P growth rate and n-type doping for fixed SiH2Cl2 and HCl mass-flows. We have in Figure 4 a sharp increase, a stabilization then a Si:P GR decrease as the PH3 flow increases, which might be due to surface poisoning. Such a behaviour is associated with a P+ ion concentration that sharply increases then reaches a plateau close to 1020 cm-3. We have used such a co-flow processes to thicken at 725°C, ATM the sources and drains regions of stacked Si nanowires with 50 nm of Si:P. The surface of those RSDs was slightly rough (as for Si:P layers on blanket substrates). Full selectivity versus SiO2 (Buried OXyde) and SiN internal spacers was achieved, however, as illustrated by the SEM images of Figure 5. Finally, we have studied the feasibility of adding SiCH6 to the gaseous mixture in order to have C atoms that would supress B diffusion (p+ pockets to control short channel effects in bulk nMOS transistors) and hopefully inject tensile strain in short Si channels (if the substitutional C content is high enough). Because of the rather high temperature (700°C), we were not able to obtain [Csubst.] above 0.55%, as shown by Figure 6 XRD profiles. We were otherwise faced with a Si1-yCy:P GR that decreased and a layer resistivity that increased as the SiCH6 mass-flow increased (competition between P and C atoms for incorporation in the lattice and electron mobility degradation because of the small size of the C atoms), as shown in Figure 7. The best trade-off was achieved for a F(SiCH6)/F(PH3) MFR close to unity. [1] J.M. Hartmann et al, J. Cryst. Growth 264 (2004) 36 and J. Cryst. Growth 310 (2008) 62. [2] J.M. Hartmann et al., Semicond. Sci. Technol. 28 (2013) 025017 and 025018. Figure 1

Published
2016

24. Fish culture technology using double net system for hybrid grouper (brown marbled grouper Epinephelus fuscoguttatus × giant grouper Epinephelus lanceolatus ) and rabbitfish ( Siganus canaliculatus )

Author

J Aubin, D Radona, T H Prihadi, M Hermawan, A Widiyati, N Permana, Res Inst Freshwater Aquaculture & Fisheries Exten, Jalan Sempur 1, Bogor 16129, Indonesia, Agcy Marine & Fisheries Res & Human Resources, Jalan Medan Merdeka Timur 16, Jakarta, Indonesia, Inst Mariculture Res & Fisheries Extens, Bali, Indonesia, Sol Agro et hydrosystème Spatialisation (SAS), AGROCAMPUS OUEST, and Institut national d'enseignement supérieur pour l'agriculture, l'alimentation et l'environnement (Institut Agro)-Institut national d'enseignement supérieur pour l'agriculture, l'alimentation et l'environnement (Institut Agro)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)

Subjects
0303 health sciences, Epinephelus fuscoguttatus, biology, Siganus canaliculatus, Marbled meat, Fish farming, Zoology, 04 agricultural and veterinary sciences, Epinephelus, biology.organism_classification, 03 medical and health sciences, [SDE]Environmental Sciences, [SDV.SA.STP]Life Sciences [q-bio]/Agricultural sciences/Sciences and technics of fishery, 040102 fisheries, 0401 agriculture, forestry, and fisheries, Grouper, 14. Life underwater, Rabbitfish, ComputingMilieux_MISCELLANEOUS, 030304 developmental biology
Abstract

International audience

Published
2019

25. Improvement of the electrical performance of Au/Ti/HfO 2 /Ge 0.9 Sn 0.1 p-MOS capacitors by using interfacial layers

Author

Bernard Pelissier, M. A. Mahjoub, Bassem Salem, Franck Bassani, J.M. Hartmann, Gerard Ghibaudo, Sébastien Labau, Thibault Haffner, J. Aubin, Sylvain David, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
Materials science, Physics and Astronomy (miscellaneous), chemistry.chemical_element, Germanium, 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, [SPI]Engineering Sciences [physics], X-ray photoelectron spectroscopy, law, 0103 physical sciences, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Deposition (law), 010302 applied physics, business.industry, Plasma, 021001 nanoscience & nanotechnology, Capacitor, CMOS, chemistry, Optoelectronics, 0210 nano-technology, business, Tin, Layer (electronics)
Abstract

The impact of different interfacial layers (ILs) on the electrical performances of Au/Ti/HfO2/Ge0.9Sn0.1 metal oxide semiconductor (MOS) capacitors is studied. Parallel angle resolved x-ray photoelectron spectroscopy measurements show that germanium diffuses into the HfO2 layer when no IL is used. This results in an increase in the tin content at the interface and a high interface state density. We demonstrate that the use of an IL prevents germanium and HfO2 intermixing and improves the electrical performance of MOS capacitors. Several ILs are studied such as alumina (Al2O3) and plasma oxidized GeSn (GeSnOx) prior to HfO2 deposition. C–V measurements correlated with simulations made by a customized analytical model indicate an interface state density of 5 × 1011 eV−1 cm−2 for the HfO2/GeSnOx/Ge0.9Sn0.1 gate stack. This result is promising for the integration of high mobility GeSn channels in CMOS devices.The impact of different interfacial layers (ILs) on the electrical performances of Au/Ti/HfO2/Ge0.9Sn0.1 metal oxide semiconductor (MOS) capacitors is studied. Parallel angle resolved x-ray photoelectron spectroscopy measurements show that germanium diffuses into the HfO2 layer when no IL is used. This results in an increase in the tin content at the interface and a high interface state density. We demonstrate that the use of an IL prevents germanium and HfO2 intermixing and improves the electrical performance of MOS capacitors. Several ILs are studied such as alumina (Al2O3) and plasma oxidized GeSn (GeSnOx) prior to HfO2 deposition. C–V measurements correlated with simulations made by a customized analytical model indicate an interface state density of 5 × 1011 eV−1 cm−2 for the HfO2/GeSnOx/Ge0.9Sn0.1 gate stack. This result is promising for the integration of high mobility GeSn channels in CMOS devices.

Published
2019

27. Mid-Infrared GeSn-Based LEDs with Sn Content up to 16%

Author

Vincent Calvo, Vincent Reboud, Ph. Rodriguez, Mathieu Bertrand, Jérémie Chrétien, J. Aubin, Nicolas Pauc, Alexei Chelnokov, Lara Casiez, Rami Khazaka, Andrea Quintero, J.M. Hartmann, and Q. M. Thai

Subjects
010302 applied physics, Materials science, business.industry, Energy level splitting, 02 engineering and technology, Electroluminescence, 021001 nanoscience & nanotechnology, 01 natural sciences, Temperature measurement, law.invention, law, 0103 physical sciences, Optoelectronics, Light emission, Photonics, 0210 nano-technology, business, Photonic crystal, Diode, Light-emitting diode
Abstract

We have grown by Reduced Pressure Chemical Vapor Deposition (RPCVD) vertical GeSn light-emitting diodes (LEDs) with (i) Sn content ranging from 6% to 16% and (ii) with or without SiGeSn barriers. Direct band-gap behaviors and activation energies of defects affecting emission efficiency of our different stacks were analyzed by temperature dependent electroluminescence measurements. A strong light emission enhancement was observed thanks to SiGeSn confinement barriers compared to reference samples. The electroluminescence intensity of Ge0.84Sn0.16 LEDs was increased by a factor 2 compared to that of Ge0.87Sn0.13 devices. This strong enhancement at room temperature is attributed to the increase of the splitting energy between Γ and L valleys for higher Sn content LEDs.

Published
2019

28. GeSn surface preparation by wet cleaning and in-situ plasma treatments prior to metallization

Author

Laurent Vallier, Ph. Rodriguez, Andrea Quintero, Pascal Besson, Nicolas Chevalier, J.M. Hartmann, P.E. Raynal, Virginie Loup, J. Aubin, Clot, Marielle, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
010302 applied physics, In situ, [PHYS]Physics [physics], Materials science, Metallurgy, Wet cleaning, 02 engineering and technology, Plasma, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, [PHYS] Physics [physics], Surface preparation, 0103 physical sciences, Electrical and Electronic Engineering, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

29. Very low temperature epitaxy of Ge and Ge rich SiGe alloys with Ge2H6 in a Reduced Pressure – Chemical Vapour Deposition tool

Author

M. Bauer, J.M. Hartmann, S. Moffatt, and J. Aubin

Subjects
010302 applied physics, Materials science, Surface reactivity, Analytical chemistry, Dichlorosilane, Nanotechnology, 02 engineering and technology, Chemical vapor deposition, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Inorganic Chemistry, chemistry.chemical_compound, chemistry, Germane, 0103 physical sciences, Materials Chemistry, Growth rate, Disilane, Digermane, 0210 nano-technology
Abstract

We have studied the very low temperature epitaxy of pure Ge and of Ge-rich SiGe alloys in a 200 mm industrial reduced pressure chemical vapour deposition tool. We have, first of all, benchmarked germane (GeH 4 ) and digermane (Ge 2 H 6 ) for the growth of pure Ge. Used Ge 2 H 6 instead of GeH 4 enabled us to dramatically increase the Ge growth rate at temperatures 425 °C and lower (5.6 nm min −1 compared to 0.14 nm min −1 at 350 °C with a Ge 2 H 6 mass-flow one fourth that of GeH 4 ). We have also evaluated at 400 °C, 100 Torr, the impact of the GeH 4 or Ge 2 H 6 mass-flow on the Ge growth rate. For a given Ge atomic flow, the higher surface reactivity of digermane yielded roughly five times higher growth rates than with germane. We have then combined digermane with disilane (Si 2 H 6 ) or dichlorosilane (SiH 2 Cl 2 ) in order to study the GeSi growth kinetics at 475 °C, 100 Torr. While the SiH 2 Cl 2 mass-flow did not have any clear influence on the GeSi growth rate (with a 14 nm min −1 mean value, then), a Si 2 H 6 mass-flow increase resulted in a slight GeSi growth rate increase (from 11 nm min −1 up to 14 nm min −1 ). Significantly higher Ge concentrations were otherwise accessed with dichlorosilane than with disilane, in the 77–82% range compared to the 39–53% range, respectively.

Published
2016

30. [Exposure of vapers to formaldehyde and acrolein: A systematic review]

Author

P, Dupont and H-J, Aubin

Subjects
Smokers, Formaldehyde, Occupational Exposure, Vaping, Humans, Smoking Cessation, Acrolein, Electronic Nicotine Delivery Systems
Abstract

Although recognized as less dangerous than conventional cigarettes, the toxicity of the electronic cigarette vapor's toxicity remains to be fully assessed. This review explores vapers' exposition to formaldehyde and acrolein.Systematic PubMed search for reports regarding formaldehyde or acrolein or their metabolites in electronic cigarette vapor, in vapers, or in ambient air.Fifty-two publications were selected. Found in almost all studies on vaper, formaldehyde is 8 times out of 11 - and acrolein constantly - in lower amounts than those found in conventional cigarettes. Acrolein's metabolite is found in all studies in vapers. The concentrations of formaldehyde and/or acrolein generated during vapor production may be affected by the characteristics of the E-liquid, voltage, vaping topography, and by the flavor additives.In the current state of knowledge, we must continue to support and help smokers to quit smoking, and for those who are engaged in a harm reduction approach, to minimize the duration of their electronic cigarette use.

Published
2018

31. First inter-laboratory study of a Supercritical Fluid Chromatography method for the determination of pharmaceutical impurities

Author

Madeleine Hill, Philippe Hubert, Katerina Plachka, Abhijit Tarafder, Adrien Raimbault, Benjamin Wuyts, Manish Grangrade, Niranjan Desphande, Andrew J. Aubin, Fabien Mauge, Vincent Desfontaine, Lucie Nováková, Erik L. Regalado, Mengling Wong, Sophie Bertin, Alexandre Grand-Guillaume Perrenoud, Julien Lefevre, Estelle Corbel, Caroline West, Elise Lemasson, Santosh Sadaphule, Dorina Kotoni, Brandon M. Jocher, Adrian Clarke, Marion Iguiniz, Eric Lesellier, Tomas Leek, Davy Guillarme, Debby Mangelings, Yvan Vander Heyden, Loic Villemet, Ravi Yadav, Nicolas Roques, Sabine Heinisch, Philippe Hennig, Luca Gioacchino Losacco, Isabelle François, Maxime Cazes, Nathalie Da Costa, Claudio Brunelli, Jean-Luc Veuthey, William Farrell, Kelly Zhang, Roland Djang’eing’a Marini, Christophe Desvignes, Shankar Shringare, Charlene Galea, Michael J. Gray, Amandine Dispas, Sandesh Rane, Lulu Dai, Morgan Sarrut, School of Pharmaceutical Science, University of Geneva [Switzerland]-Université de Lausanne (UNIL), Laboratoire De Chimie Analytique Pharmaceutique, Université de Genève (UNIGE)-Ecole de pharmacie Genève-Lausanne (EPGL), Special Pathogens, Public Health Agency of Canada-National Microbiology Laboratory, Chromatography & Hyphenated Techniques - Chromatographie et techniques couplées, Institut des Sciences Analytiques (ISA), Institut de Chimie du CNRS (INC)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Sanofi R&D, Analyt Sci, Institut de Chimie Organique et Analytique (ICOA), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut de Chimie du CNRS (INC)-Institut National de la Santé et de la Recherche Médicale (INSERM), Tampere University of Technology [Tampere] (TUT), NASA Goddard Space Flight Center (GSFC), Oril Industrie, Laboratoire des Sciences de l'Information et des Systèmes (LSIS), Centre National de la Recherche Scientifique (CNRS)-Arts et Métiers Paristech ENSAM Aix-en-Provence-Université de Toulon (UTLN)-Aix Marseille Université (AMU), Institut National de l'Environnement Industriel et des Risques (INERIS), Research grants from Walloon Region of Belgium and EU Commission (project FEDER-PHARE) to Amandine DISPAS are gratefully acknowledged. Waters (Milford, MA, USA) is acknowledged for supplying all columns used in this study. Novartis (Basel, Switzerland) is acknowledged for funding the EDQM standards sent to the participating laboratories. The author wants to thank M. Heptia and B. Dahmen for technical assistance and F. Bonivert for logistic help. K. Plachka and L. Novakova wish to gratefully acknowledge the grant project SVV No. 260412/2018 and the STARSS project (Reg. No. CZ.02.1.01/0.0/0.0/15_003/0000465) co-funded by ERDF. L. Montis (Waters) is acknowledged., Faculty of Medicine and Pharmacy, Pharmaceutical and Pharmacological Sciences, Chemical Engineering and Industrial Chemistry, Department of Analytical Chemistry, Applied Chemometrics and Molecular Modelling, Université de Lausanne = University of Lausanne (UNIL)-Université de Genève = University of Geneva (UNIGE), Université de Genève = University of Geneva (UNIGE)-Ecole de pharmacie Genève-Lausanne (EPGL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université d'Orléans (UO)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Arts et Métiers Paristech ENSAM Aix-en-Provence-Centre National de la Recherche Scientifique (CNRS)

Subjects
Quality Control, spectroscopy, Salbutamol sulfate, International Cooperation, Transferability, Clinical Biochemistry, Pharmaceutical Science, Context (language use), Food company, 01 natural sciences, Analytical Chemistry, [CHIM.ANAL]Chemical Sciences/Analytical chemistry, Drug Discovery, Supercritical Fluid Chromatography (SFC), Inter-laboratory, Process engineering, Pharmaceutical impurities, Collaborative study, ddc:615, Reproducibility, 010405 organic chemistry, business.industry, Chemistry, 010401 analytical chemistry, Reproducibility of Results, Chromatography, Supercritical Fluid, Repeatability, 0104 chemical sciences, Supercritical fluid chromatography, Drug Contamination, business, Inter-laboratory study, Chromatography, Liquid
Abstract

International audience; Supercritical Fluid Chromatography (SFC) has known a strong regain of interest for the last 10 years, especially in the field of pharmaceutical analysis. Besides the development and validation of the SFC method in one individual laboratory, it is also important to demonstrate its applicability and transferability to various laboratories around the world. Therefore, an inter-laboratory study was conducted and published for the first time in SFC, to assess method reproducibility, and evaluate whether this chromatographic technique could become a reference method for quality control (QC) laboratories. This study involved 19 participating laboratories from 4 continents and 9 different countries. It included 5 academic groups, 3 demonstration laboratories at analytical instrument companies, 10 pharmaceutical companies and 1 food company. In the initial analysis of the study results, consistencies within- and between-laboratories were deeply examined. In the subsequent analysis, the method reproducibility was estimated taking into account variances in replicates, between-days and between-laboratories. The results obtained were compared with the literature values for liquid chromatography (LC) in the context of impurities determination. Repeatability and reproducibility variances were found to be similar or better than those described for LC methods, and highlighted the adequacy of the SFC method for QC analyses. The results demonstrated the excellent and robust quantitative performance of SFC. Consequently, this complementary technique is recognized on equal merit to other chromatographic techniques.

Published
2018

32. Lasing Effect in GeSn Photonic Crystal

Author

Vincent Calvo, J. M. Hartmann, Vincent Reboud, Alexei Chelnokov, Q. M. Thai, Jérémie Chrétien, J. Aubin, Nicolas Pauc, Rami Khazaka, and Mathieu Bertrand

Subjects
Optical pumping, Materials science, Optical imaging, business.industry, Single-mode optical fiber, Physics::Optics, Optoelectronics, business, Lasing threshold, Layer (electronics), Buffer (optical fiber), Photonic crystal
Abstract

A photonic crystal membrane was fabricated on a GeSn 16% layer, grown on a step-graded buffer structure. The single mode lasing observed at low temperature under optical pumping was attributed to a guided band edge mode of the photonic crystal.

Published
2018

33. Optoelectrical Characterizations of GeSn Heterojunction Photodiodes with 6% to 16% of Sn

Author

Jérémie Chrétien, Mathieu Bertrand, Olivier Lemonnier, Rami Khazaka, Q. M. Thai, Vincent Reboud, J. Aubin, Alexei Chelnokov, Vincent Calvo, Nicolas Pauc, and J. M. Hartmann

Subjects
Photocurrent, Materials science, business.industry, Band gap, Photoconductivity, Heterojunction, Photodiode, law.invention, law, Optoelectronics, Photonics, business, Photonic crystal, Dark current
Abstract

We study vertical GeSn p-i-n heterostructures grown by RP-CVD on GeSn step-graded buffers with Sn content ranging from 6% to 16%. The performed spectrally-resolved photocurrent measurements allowed us to determine the direct or indirect bandgap behaviour of our devices. We report on the electrical and optical behavior of the fabricated photodiodes at room temperature.

Published
2018

34. 2D hexagonal photonic crystal GeSn laser with 16% Sn content

Author

J. M. Hartmann, Vincent Reboud, Jérémie Chrétien, Mathieu Bertrand, J. Aubin, Q. M. Thai, Vincent Calvo, Nicolas Pauc, Alexei Chelnokov, Silicon Nanoelectronics Photonics and Structures (SiNaps), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), business.industry, Hexagonal crystal system, Physics::Optics, 02 engineering and technology, Limiting, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, Semiconductor laser theory, law.invention, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, law, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Lasing threshold, Laser beams, ComputingMilieux_MISCELLANEOUS, Photonic crystal
Abstract

We demonstrate lasing in an optically pumped GeSn photonic crystal membrane with 16% of Sn. A guided band-edge mode lased up to 60 K. A good agreement was found between experimental and calculated reduced mode frequencies of the photonic crystal. The active Ge0.84Sn0.16 layer was grown on a step-graded GeSn buffer, limiting thereby the density of misfit dislocations. The thresholds obtained (227 kW/cm2 at 15 K to 340 kW/cm2 at 60 K) were comparable to our previous works on suspended microdisks, highlighting the robustness of the GeSn optical gain against potential surface recombination effects stemming from a high surface-to-volume ratio.

Published
2018

35. Mid-IR GeSn/SiGeSn-Based Lasers and Photodiodes

Author

Vincent Calvo, Mathieu Bertrand, F. Armand-Pilon, J. Aubin, Jérémie Chrétien, Q. M. Thai, Rami Khazaka, Alexei Chelnokov, Hans Sigg, J.M. Hartmann, Vincent Reboud, and Nicolas Pauc

Subjects
Materials science, law, business.industry, Optoelectronics, business, Laser, Photodiode, law.invention, Photonic crystal
Abstract

We describe our latest results on optically pumped GeSn lasers: microdiscs, photonic crystals, parabolic corner cubes. Thresholds and max operating temperatures (230K) are improved using step-graded GeSn epi buffers, SiGeSn claddings, and controlled mechanical strain in the structures. We also show our first GeSn photodiodes.

Published
2018

36. Impact of Sn content in Ge1−xSnx layers on Ni-stanogermanides solid-state reaction and properties

Author

Eric Cassan, J.M. Hartmann, V. Loup, Patrice Gergaud, J. Aubin, Ph. Rodriguez, Nicolas Chevalier, Vincent Reboud, and Andrea Quintero

Subjects
010302 applied physics, In situ, Materials science, Annealing (metallurgy), Atomic force microscopy, Solid-state, Analytical chemistry, chemistry.chemical_element, Germanium, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Nickel, chemistry, 0103 physical sciences, 0210 nano-technology, Tin, Sheet resistance
Abstract

A comprehensive analysis focused on the impact of Sn content in GeSn layers, on Ni-based contacts, is presented. In situ XRD, AFM and Rsh measurements were performed in order to follow phase growth, surface morphological evolution and electrical properties as the annealing temperature changed. Potential impact of those evolutions on devices integration is also discussed.

Published
2018

37. Lasing in Ge1-xSnx-based photonic crystals (Conference Presentation)

Author

Quang Minh Thai, Vincent Reboud, J. Aubin, Vincent Calvo, Nicolas Pauc, Jean-Michel Hartmann, Mathieu Bertrand, Jérémie Chrétien, and Alexei Tchelnokov

Subjects
Materials science, Silicon photonics, Semiconductor, business.industry, Optoelectronics, Spontaneous emission, Substrate (electronics), Photonics, business, Lasing threshold, Active layer, Photonic crystal
Abstract

The Silicon (Si) CMOS technology has long been the backbone of electronic devices. In these components, data communication is currently limited by the metal interconnects. An alternative solution based on optical transmission demands an additional light source due to the intrinsic indirect gap of Si, which prevents it from efficiently emitting light. The requirement of a monolithic, Si-compatible light source has made another column IV semiconductor – Germanium (Ge) - a potential candidate. Ge has, as Si, an indirect gap, but with a smaller separation between Γ and L energy levels. A direct gap Ge-based material can be obtained by alloying it with Tin (Sn) – a column IV semi-metal. Recent studies have demonstrated lasing in optical cavities made with Ge1-xSnx alloy: So far, lasing in Fabry-Perot cavity [1, 2] and in micro-disk cavity [3, 4] were reported. In this article, we study lasing in Ge1-xSnx - based photonic crystals, with 16% Sn concentration. Studies were conducted on Hn defect cavities (with n denoting the number of hexagonal ring of air holes removed from the center), and slow mode membranes – which are photonic crystals with low group velocity optical mode appeared in the photonic band structure, thus enhancing the interaction between emitted light and the gain medium. A step-graded epitaxy technique was used to fabricate the samples. It consists in inserting a thick buffer with discrete Sn content increases between the Ge virtual substrate underneath and the main Ge0.84Sn0.16 layer on top. With this method, misfit dislocations are distributed more evenly in the grading (instead of propagating towards the surface), which preserves the crystalline quality of the partly relaxed Ge0.84Sn0.16 optical layer. Both Hn cavities and slow mode membranes were under-etched to make the active layer fully relaxed. The photonic crystals are slightly curved due to strong relaxation of the active layer. The structures were optically pumped with a 1064 nm pulsed laser. Fourier transform infrared (FTIR) spectroscopy was used to study the photoluminescence of these samples. We demonstrate lasing on the H4 cavities and the slow mode membranes. The dimensions of both structures were calculated to pin the resonance mode (or slow mode under the light cone) around the emitted wavelength of relaxed Ge0.84Sn0.16. Based on the spectra and the Lin-Lout curve, we estimate the current lowest lasing threshold around 180 kW/cm2 for slow mode membrane at low temperature (15K), with emitted wavelength of 2880 nm. The lasing threshold obtained here is of the same order of magnitude of those reported for micro-disk and Fabry-Perot cavities [1, 2, 3, 4], suggesting that the intrinsic properties of Ge1-xSnx are the main limit factor to the performance. Surface passivation and carrier confinement with SiGeSn alloys and/or multi quantum well structures should be used to enhance the Ge1-xSnx radiative recombination efficiency. [1] S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann et al, Nature Photonics 9,88 (2015) [2] S. Al-Kabi, S. A. Ghetmiri, J. Margetis, T. Pham, Y. Zhou, W. Dou, B. Collier, R. Quinde, W. Du, A. Mosleh et al, Appl. Phys. Lett. 109, 171105 (2016) [3] D. Stange, S. Wirths, R. Geiger, C. Schulte-Braucks, B. Marzban, N. von den Driesch, G. Mussler, T. Zabel, T. Stoica, J-M Hartmann et al, ACS Photonics 3, 1279 (2016) [4] V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q.M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J.Rothman et al, Appl. Phys. Lett. 111, 092101 (2017)

Published
2018

38. Azimuthal anisotropy of charged particles with transverse momentum up to 100 GeV/c in PbPb collisions at sNN=5.02 TeV

Author

Sirunyan, A.M. Tumasyan, A. Adam, W. Asilar, E. Bergauer, T. Brandstetter, J. Brondolin, E. Dragicevic, M. Erö, J. Flechl, M. Friedl, M. Frühwirth, R. Ghete, V.M. Hartl, C. Hörmann, N. Hrubec, J. Jeitler, M. König, A. Krätschmer, I. Liko, D. Matsushita, T. Mikulec, I. Rabady, D. Rad, N. Rahbaran, B. Rohringer, H. Schieck, J. Strauss, J. Waltenberger, W. Wulz, C.-E. Dvornikov, O. Makarenko, V. Mossolov, V. Suarez Gonzalez, J. Zykunov, V. Shumeiko, N. Alderweireldt, S. De Wolf, E.A. Janssen, X. Lauwers, J. Van De Klundert, M. Van Haevermaet, H. Van Mechelen, P. Van Remortel, N. Van Spilbeeck, A. Abu Zeid, S. Blekman, F. D'Hondt, J. Daci, N. De Bruyn, I. Deroover, K. Lowette, S. Moortgat, S. Moreels, L. Olbrechts, A. Python, Q. Skovpen, K. Tavernier, S. Van Doninck, W. Van Mulders, P. Van Parijs, I. Brun, H. Clerbaux, B. De Lentdecker, G. Delannoy, H. Fasanella, G. Favart, L. Goldouzian, R. Grebenyuk, A. Karapostoli, G. Lenzi, T. Léonard, A. Luetic, J. Maerschalk, T. Marinov, A. Randle-conde, A. Seva, T. Vander Velde, C. Vanlaer, P. Vannerom, D. Yonamine, R. Zenoni, F. Zhang, F. Cimmino, A. Cornelis, T. Dobur, D. Fagot, A. Gul, M. Khvastunov, I. Poyraz, D. Salva, S. Schöfbeck, R. Tytgat, M. Van Driessche, W. Yazgan, E. Zaganidis, N. Bakhshiansohi, H. Beluffi, C. Bondu, O. Brochet, S. Bruno, G. Caudron, A. De Visscher, S. Delaere, C. Delcourt, M. Francois, B. Giammanco, A. Jafari, A. Komm, M. Krintiras, G. Lemaitre, V. Magitteri, A. Mertens, A. Musich, M. Piotrzkowski, K. Quertenmont, L. Selvaggi, M. Vidal Marono, M. Wertz, S. Beliy, N. Aldá Júnior, W.L. Alves, F.L. Alves, G.A. Brito, L. Hensel, C. Moraes, A. Pol, M.E. Rebello Teles, P. Belchior Batista Das Chagas, E. Carvalho, W. Chinellato, J. Custódio, A. Da Costa, E.M. Da Silveira, G.G. De Jesus Damiao, D. De Oliveira Martins, C. Fonseca De Souza, S. Huertas Guativa, L.M. Malbouisson, H. Matos Figueiredo, D. Mora Herrera, C. Mundim, L. Nogima, H. Prado Da Silva, W.L. Santoro, A. Sznajder, A. 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Shalhout, S. Shi, M. Smith, J. Squires, M. Stolp, D. Tos, K. Tripathi, M. Bachtis, M. Bravo, C. Cousins, R. Dasgupta, A. Florent, A. Hauser, J. Ignatenko, M. Mccoll, N. Saltzberg, D. Schnaible, C. Valuev, V. Weber, M. Bouvier, E. Burt, K. Clare, R. Ellison, J. Gary, J.W. Ghiasi Shirazi, S.M.A. Hanson, G. Heilman, J. Jandir, P. Kennedy, E. Lacroix, F. Long, O.R. Olmedo Negrete, M. Paneva, M.I. Shrinivas, A. Si, W. Wei, H. Wimpenny, S. Yates, B.R. Branson, J.G. Cerati, G.B. Cittolin, S. Derdzinski, M. Gerosa, R. Holzner, A. Klein, D. Krutelyov, V. Letts, J. Macneill, I. Olivito, D. Padhi, S. Pieri, M. Sani, M. Sharma, V. Simon, S. Tadel, M. Vartak, A. Wasserbaech, S. Welke, C. Wood, J. Würthwein, F. Yagil, A. Zevi Della Porta, G. Amin, N. Bhandari, R. Bradmiller-Feld, J. Campagnari, C. Dishaw, A. Dutta, V. Franco Sevilla, M. George, C. Golf, F. Gouskos, L. Gran, J. Heller, R. Incandela, J. Mullin, S.D. Ovcharova, A. Qu, H. Richman, J. Stuart, D. Suarez, I. Yoo, J. Anderson, D. 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Kreis, B. Lammel, S. Linacre, J. Lincoln, D. Lipton, R. Liu, M. Liu, T. Lopes De Sá, R. Lykken, J. Maeshima, K. Magini, N. Marraffino, J.M. Maruyama, S. Mason, D. McBride, P. Merkel, P. Mrenna, S. Nahn, S. O'Dell, V. Pedro, K. Prokofyev, O. Rakness, G. Ristori, L. Sexton-Kennedy, E. Soha, A. Spalding, W.J. Spiegel, L. Stoynev, S. Strait, J. Strobbe, N. Taylor, L. Tkaczyk, S. Tran, N.V. Uplegger, L. Vaandering, E.W. Vernieri, C. Verzocchi, M. Vidal, R. Wang, M. Weber, H.A. Whitbeck, A. Wu, Y. Acosta, D. Avery, P. Bortignon, P. Bourilkov, D. Brinkerhoff, A. Carnes, A. Carver, M. Curry, D. Das, S. Field, R.D. Furic, I.K. Konigsberg, J. Korytov, A. Low, J.F. Ma, P. Matchev, K. Mei, H. Mitselmakher, G. Rank, D. Shchutska, L. Sperka, D. Thomas, L. Wang, J. Wang, S. Yelton, J. Linn, S. Markowitz, P. Martinez, G. Rodriguez, J.L. Ackert, A. Adams, T. Askew, A. Bein, S. Hagopian, S. Hagopian, V. Johnson, K.F. Kolberg, T. Prosper, H. Santra, A. Yohay, R. Baarmand, M.M. Bhopatkar, V. Colafranceschi, S. Hohlmann, M. Noonan, D. Roy, T. Yumiceva, F. Adams, M.R. Apanasevich, L. Berry, D. Betts, R.R. Bucinskaite, I. Cavanaugh, R. Evdokimov, O. Gauthier, L. Gerber, C.E. Hofman, D.J. Jung, K. Sandoval Gonzalez, I.D. Varelas, N. Wang, H. Wu, Z. Zakaria, M. Zhang, J. Bilki, B. Clarida, W. Dilsiz, K. Durgut, S. Gandrajula, R.P. Haytmyradov, M. Khristenko, V. Merlo, J.-P. Mermerkaya, H. Mestvirishvili, A. Moeller, A. Nachtman, J. Ogul, H. Onel, Y. Ozok, F. Penzo, A. Snyder, C. Tiras, E. Wetzel, J. Yi, K. Blumenfeld, B. Cocoros, A. Eminizer, N. Fehling, D. Feng, L. Gritsan, A.V. Maksimovic, P. Roskes, J. Sarica, U. Swartz, M. Xiao, M. You, C. Al-bataineh, A. Baringer, P. Bean, A. Boren, S. Bowen, J. Castle, J. Forthomme, L. Kenny, R.P., III Khalil, S. Kropivnitskaya, A. Majumder, D. Mcbrayer, W. Murray, M. Sanders, S. Stringer, R. Tapia Takaki, J.D. Wang, Q. Ivanov, A. Kaadze, K. Maravin, Y. Mohammadi, A. Saini, L.K. Skhirtladze, N. Toda, S. Rebassoo, F. Wright, D. Anelli, C. Baden, A. Baron, O. Belloni, A. Calvert, B. Eno, S.C. Ferraioli, C. Gomez, J.A. Hadley, N.J. Jabeen, S. Jeng, G.Y. Kellogg, R.G. Kunkle, J. Mignerey, A.C. Ricci-Tam, F. Shin, Y.H. Skuja, A. Tonjes, M.B. Tonwar, S.C. Abercrombie, D. Allen, B. Apyan, A. Azzolini, V. Barbieri, R. Baty, A. Bi, R. Bierwagen, K. Brandt, S. Busza, W. Cali, I.A. D'Alfonso, M. Demiragli, Z. Gomez Ceballos, G. Goncharov, M. Hsu, D. Iiyama, Y. Innocenti, G.M. Klute, M. Kovalskyi, D. Krajczar, K. Lai, Y.S. Lee, Y.-J. Levin, A. Luckey, P.D. Maier, B. Marini, A.C. Mcginn, C. Mironov, C. Narayanan, S. Niu, X. Paus, C. Roland, C. Roland, G. Salfeld-Nebgen, J. Stephans, G.S.F. Tatar, K. Velicanu, D. Wang, J. Wang, T.W. Wyslouch, B. Benvenuti, A.C. Chatterjee, R.M. Evans, A. Hansen, P. Kalafut, S. Kao, S.C. Kubota, Y. Lesko, Z. Mans, J. Nourbakhsh, S. Ruckstuhl, N. Rusack, R. Tambe, N. Turkewitz, J. Acosta, J.G. Oliveros, S. Avdeeva, E. Bloom, K. Claes, D.R. Fangmeier, C. Gonzalez Suarez, R. Kamalieddin, R. Kravchenko, I. Malta Rodrigues, A. Monroy, J. Siado, J.E. Snow, G.R. Stieger, B. Alyari, M. Dolen, J. Godshalk, A. Harrington, C. Iashvili, I. Kaisen, J. Nguyen, D. Parker, A. Rappoccio, S. Roozbahani, B. Alverson, G. Barberis, E. Hortiangtham, A. Massironi, A. Morse, D.M. Nash, D. Orimoto, T. Teixeira De Lima, R. Trocino, D. Wang, R.-J. Wood, D. Bhattacharya, S. Charaf, O. Hahn, K.A. Kumar, A. Mucia, N. Odell, N. Pollack, B. Schmitt, M.H. Sung, K. Trovato, M. Velasco, M. Dev, N. Hildreth, M. Hurtado Anampa, K. Jessop, C. Karmgard, D.J. Kellams, N. Lannon, K. Marinelli, N. Meng, F. Mueller, C. Musienko, Y. Planer, M. Reinsvold, A. Ruchti, R. Rupprecht, N. Smith, G. Taroni, S. Wayne, M. Wolf, M. Woodard, A. Alimena, J. Antonelli, L. Bylsma, B. Durkin, L.S. Flowers, S. Francis, B. Hart, A. Hill, C. Hughes, R. Ji, W. Liu, B. Luo, W. Puigh, D. Winer, B.L. Wulsin, H.W. Cooperstein, S. Driga, O. Elmer, P. Hardenbrook, J. Hebda, P. Lange, D. Luo, J. Marlow, D. Medvedeva, T. Mei, K. Ojalvo, I. Olsen, J. Palmer, C. Piroué, P. Stickland, D. Svyatkovskiy, A. Tully, C. Malik, S. Barker, A. Barnes, V.E. Folgueras, S. Gutay, L. Jha, M.K. Jones, M. Jung, A.W. Khatiwada, A. Miller, D.H. Neumeister, N. Schulte, J.F. Shi, X. Sun, J. Wang, F. Xie, W. Parashar, N. Stupak, J. Adair, A. Akgun, B. Chen, Z. Ecklund, K.M. Geurts, F.J.M. Guilbaud, M. Li, W. Michlin, B. Northup, M. Padley, B.P. Roberts, J. Rorie, J. Tu, Z. Zabel, J. Betchart, B. Bodek, A. de Barbaro, P. Demina, R. Duh, Y.T. Ferbel, T. Galanti, M. Garcia-Bellido, A. Han, J. Hindrichs, O. Khukhunaishvili, A. Lo, K.H. Tan, P. Verzetti, M. Agapitos, A. Chou, J.P. Gershtein, Y. Gómez Espinosa, T.A. Halkiadakis, E. Heindl, M. Hughes, E. Kaplan, S. Kunnawalkam Elayavalli, R. Kyriacou, S. Lath, A. Nash, K. Osherson, M. Saka, H. Salur, S. Schnetzer, S. Sheffield, D. Somalwar, S. Stone, R. Thomas, S. Thomassen, P. Walker, M. Delannoy, A.G. Foerster, M. Heideman, J. Riley, G. Rose, K. Spanier, S. Thapa, K. Bouhali, O. Celik, A. Dalchenko, M. De Mattia, M. Delgado, A. Dildick, S. Eusebi, R. Gilmore, J. Huang, T. Juska, E. Kamon, T. Mueller, R. Pakhotin, Y. Patel, R. Perloff, A. Perniè, L. Rathjens, D. Safonov, A. Tatarinov, A. Ulmer, K.A. Akchurin, N. Damgov, J. De Guio, F. Dragoiu, C. Dudero, P.R. Faulkner, J. Gurpinar, E. Kunori, S. Lamichhane, K. Lee, S.W. Libeiro, T. Peltola, T. Undleeb, S. Volobouev, I. Wang, Z. Greene, S. Gurrola, A. Janjam, R. Johns, W. Maguire, C. Melo, A. Ni, H. Sheldon, P. Tuo, S. Velkovska, J. Xu, Q. Arenton, M.W. Barria, P. Cox, B. Goodell, J. Hirosky, R. Ledovskoy, A. Li, H. Neu, C. Sinthuprasith, T. Sun, X. Wang, Y. Wolfe, E. Xia, F. Clarke, C. Harr, R. Karchin, P.E. Sturdy, J. Belknap, D.A. Buchanan, J. Caillol, C. Dasu, S. Dodd, L. Duric, S. Gomber, B. Grothe, M. Herndon, M. Hervé, A. Klabbers, P. Lanaro, A. Levine, A. Long, K. Loveless, R. Perry, T. Pierro, G.A. Polese, G. Ruggles, T. Savin, A. Smith, N. Smith, W.H. Taylor, D. Woods, N. The CMS Collaboration

Subjects
Nuclear Experiment
Abstract

The Fourier coefficients v2 and v3 characterizing the anisotropy of the azimuthal distribution of charged particles produced in PbPb collisions at sNN=5.02 TeV are measured with data collected by the CMS experiment. The measurements cover a broad transverse momentum range, 110 GeV/c range, where anisotropic azimuthal distributions should reflect the path-length dependence of parton energy loss in the created medium. Results are presented in several bins of PbPb collision centrality, spanning the 60% most central events. The v2 coefficient is measured with the scalar product and the multiparticle cumulant methods, which have different sensitivities to initial-state fluctuations. The values from both methods remain positive up to pT∼60–80 GeV/c, in all examined centrality classes. The v3 coefficient, only measured with the scalar product method, tends to zero for pT≳20 GeV/c. Comparisons between theoretical calculations and data provide new constraints on the path-length dependence of parton energy loss in heavy ion collisions and highlight the importance of the initial-state fluctuations. © 2017 The Author

Published
2018

39. Breakthroughs in 3D Sequential technology

Author

C. Scibetta, S. Beaurepaire, F. Fournel, A. Roman, S. Chevalliez, C. Fenouillet-Beranger, X. Garros, Xavier Federspiel, J. Aubin, V. Larrey, Perrine Batude, F. Kouemeni-Tchouake, F. Ponthenier, J-B. Pin, Daniel Scevola, Lucile Arnaud, F. Aussenac, C. Guerin, P. Acosta-Alba, V. Mazzocchi, Sebastien Kerdiles, H. Fontaine, Shay Reboh, P. Perreau, Sylvain Maitrejean, Laurent Brunet, N. Rambal, M. Vinet, Pascal Besson, Christophe Morales, T. Lardin, V. Balan, Vincent Jousseaume, D. Ney, F. Mazen, and Francois Andrieu

Subjects
010302 applied physics, Materials science, business.industry, Order (ring theory), 02 engineering and technology, Epitaxy, 01 natural sciences, Active devices, 020202 computer hardware & architecture, Design for manufacturability, Reliability (semiconductor), CMOS, Surface preparation, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Wafer, business
Abstract

The 3D sequential integration, of active devices requires to limit the thermal budget of top tier processing to low temperature (LT) (i.e. $\mathrm{T}_{\text{TOP}}=500^{\circ}\mathrm{C})$ in order to ensure the stability of the bottom devices. Here we present breakthrough in six areas that were previously considered as potential showstoppers for 3D sequential integration from either a manufacturability, reliability, performance or cost point of view. Our experimental data demonstrate the ability to obtain 1) low-resistance poly-Si gate for the top FETs, 2) Full LT RSD epitaxy including surface preparation, 3) Stability of intermediate BEOL between tiers (iBEOL) with standard ULK/Cu technology, 4) Stable bonding above ULK, 5) Efficient contamination containment for wafers with Cu/ULK iBEOL enabling their re-introduction in FEOL for top FET processing 6) Smart Cut™ process above a CMOS wafer.

Published
2018
Full Text
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40. Search for dark matter and unparticles in events with a Z boson and missing transverse momentum in proton-proton collisions at root s = 13 TeV (vol 9, 106, 2017)

Author

Sirunyan, A. M. Tumasyan, A. Adam, W. Asilar, E. and Bergauer, T. Brandstetter, J. Brondolin, E. Dragicevic, M. and Eroe, J. Flechl, M. Friedl, M. Fruehwirth, R. Ghete, V. M. Hartl, C. Hoermann, N. Hrubec, J. Jeitler, M. and Koenig, A. Kraetschmer, I. Liko, D. Matsushita, T. and Mikulec, I. Rabady, D. Rad, N. Rahbaran, B. Rohringer, H. Schieck, J. Strauss, J. Waltenberger, W. Wulz, C. -E. and Chekhovsky, V. Dvornikov, O. Dydyshka, Y. Emeliantchik, I. Litomin, A. Makarenko, V. Mossolov, V. Stefanovitch, R. Gonzalez, J. Suarez Zykunov, V. Shumeiko, N. and Alderweireldt, S. De Wolf, E. A. Janssen, X. Lauwers, J. and Van de Klundert, M. Van Haevermaet, H. Van Mechelen, P. Van Remortel, N. Van Spilbeeck, A. Abu Zeid, S. Blekman, F. and D'Hondt, J. Daci, N. De Bruyn, I. Deroover, K. Lowette, S. Moortgat, S. Moreels, L. Olbrechts, A. Python, Q. and Skovpen, K. Tavernier, S. Van Doninck, W. Van Mulders, P. and Van Parijs, I. Brun, H. Clerbaux, B. De Lentdecker, G. and Delannoy, H. Fasanella, G. Favart, L. Goldouzian, R. and Grebenyuk, A. Karapostoli, G. Lenzi, T. Leonard, A. and Luetic, J. Maerschalk, T. Marinov, A. Randle-Conde, A. and Seva, T. Vander Velde, C. Vanlaer, P. Vannerom, D. and Yonamine, R. Zenoni, F. Zhang, F. Cimmino, A. Cornelis, T. Dobur, D. Fagot, A. Gul, M. Khvastunov, I. and Poyraz, D. Salva, S. Schofbeck, R. Tytgat, M. Van Driessche, W. Yazgan, E. Zaganidis, N. Bakhshiansohi, H. and Beluffi, C. Bondu, O. Brochet, S. Bruno, G. Caudron, A. and De Visscher, S. Delaere, C. Delcourt, M. Francois, B. and Giammanco, A. Jafari, A. Komm, M. Krintiras, G. and Lemaitre, V. Magitteri, A. Mertens, A. Musich, M. and Nuttens, C. Piotrzkowski, K. Quertenmont, L. Selvaggi, M. and Marono, M. Vidal Wertz, S. Beliy, N. Alda Junior, W. L. and Alves, F. L. Alves, G. A. Brito, L. Hensel, C. and Moraes, A. Pol, M. E. Rebello Teles, P. Belchior Batista Das Chagas, E. Carvalho, W. Chinellato, J. Custodio, A. Da Costa, E. M. Da Silveira, G. G. De Jesus Damiao, D. 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Dupont, N. and Elliott-Peisert, A. Everaerts, P. Fartoukh, S. Franzoni, G. Fulcher, J. Funk, W. Gigi, D. Gill, K. Girone, M. and Glege, F. Gulhan, D. Gundacker, S. Guthoff, M. and Hammer, J. Harris, P. Hegeman, J. Innocente, V. Janot, P. Kieseler, J. Kirschenmann, H. Knunz, V. Kornmayer, A. and Kortelainen, M. J. Kousouris, K. Krammer, M. Lange, C. and Lecoq, P. Lourenco, C. Lucchini, M. T. Malgeri, L. and Mannelli, M. Martelli, A. Meijers, F. Merlin, J. A. and Mersi, S. Meschi, E. Milenovic, P. Moortgat, F. Morovic, S. Mulders, M. Neugebauer, H. Orfanelli, S. Orsini, L. and Pape, L. Perez, E. Peruzzi, M. Petrilli, A. and Petrucciani, G. Pfeiffer, A. Pierini, M. Racz, A. Reis, T. Rolandi, G. Rovere, M. Sakulin, H. Sauvan, J. B. and Schafer, C. Schwick, C. Seidel, M. Sharma, A. Silva, P. and Sphicas, P. Steggemann, J. Stoye, M. Takahashi, Y. and Tosi, M. Treille, D. Triossi, A. Tsirou, A. Veckalns, V. and Veres, G. I. Verweij, M. Wardle, N. Wohri, H. K. and Zagozdzinska, A. Zeuner, W. 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Chao, Y. Chen, K. F. Chen, P. H. Fiori, F. and Hou, W. -S. Hsiung, Y. Liu, Y. F. Lu, R. -S. Moya, M. Minano Paganis, E. Psallidas, A. Tsai, J. F. and Asavapibhop, B. Singh, G. Srimanobhas, N. Suwonjandee, N. and Adiguzel, A. Bakirci, M. N. Cerci, S. Damarseckin, S. and Demiroglu, Z. S. Dozen, C. Dumanoglu, I. Girgis, S. and Gokbulut, G. Guler, Y. Hos, I. Kangal, E. E. Kara, O. and Topaksu, A. Kayis Kiminsu, U. Oglakci, M. Onengut, G. and Ozdemir, K. Tali, B. Turkcapar, S. Zorbakir, I. S. and Zorbilmez, C. Bilin, B. Bilmis, S. Isildak, B. and Karapinar, G. Yalvac, M. Zeyrek, M. Gulmez, E. Kaya, M. and Kaya, O. Yetkin, E. A. Yetkin, T. Cakir, A. and Cankocak, K. Sen, S. Grynyov, B. Levchuk, L. Sorokin, P. and Aggleton, R. Ball, F. Beck, L. Brooke, J. J. Burns, D. Clement, E. Cussans, D. Flacher, H. Goldstein, J. and Grimes, M. Heath, G. P. Heath, H. F. Jacob, J. Kreczko, L. Lucas, C. Newbold, D. M. Paramesvaran, S. Poll, A. and Sakuma, T. El Nasr-Storey, S. Seif Smith, D. Smith, V. J. Bell, K. W. Belyaev, A. Brew, C. Brown, R. M. and Calligaris, L. Cieri, D. Cockerill, D. J. A. Coughlan, J. A. and Harder, K. Harper, S. Olaiya, E. Petyt, D. and Shepherd-Themistocleous, C. H. Thea, A. Tomalin, I. R. and Williams, T. Baber, M. Bainbridge, R. Buchmuller, O. and Bundock, A. Burton, D. Casasso, S. Citron, M. Colling, D. Corpe, L. Dauncey, P. Davies, G. De Wit, A. Della Negra, M. Di Maria, R. Dunne, P. Elwood, A. Futyan, D. and Haddad, Y. Hall, G. Iles, G. James, T. Lane, R. and Laner, C. Lucas, R. Lyons, L. Magnan, A. -M. Malik, S. and Mastrolorenzo, L. Nash, J. Nikitenko, A. Pela, J. and Penning, B. Pesaresi, M. Raymond, D. M. Richards, A. and Rose, A. Seez, C. Summers, S. Tapper, A. Uchida, K. and Acosta, M. Vazquez Virdee, T. Wright, J. Zenz, S. C. and Cole, J. E. Hobson, P. R. Khan, A. Kyberd, P. Leslie, D. and Reid, I. D. Symonds, P. Teodorescu, L. Turner, M. and Borzou, A. Call, K. Dittmann, J. Hatakeyama, K. Liu, H. and Pastika, N. Cooper, S. I. Henderson, C. Rumerio, P. and West, C. Arcaro, D. Avetisyan, A. Bose, T. Gastler, D. and Rankin, D. Richardson, C. Rohlf, J. Sulak, L. Zou, D. Benelli, G. Cutts, D. Garabedian, A. Hakala, J. and Heintz, U. Hogan, J. M. Jesus, O. Kwok, K. H. M. Laird, E. Landsberg, G. Mao, Z. Narain, M. Piperov, S. and Sagir, S. Spencer, E. Syarif, R. Breedon, R. Burns, D. and Sanchez, M. Calderon De la Barca Chauhan, S. Chertok, M. and Conway, J. Conway, R. Cox, P. T. Erbacher, R. Flores, C. and Funk, G. Gardner, M. Ko, W. Lander, R. Mclean, C. and Mulhearn, M. Pellett, D. Pilot, J. Shalhout, S. and Smith, J. Squires, M. Stolp, D. Tripathi, M. Bravo, C. and Cousins, R. Dasgupta, A. Florent, A. Hauser, J. and Ignatenko, M. Mccoll, N. Saltzberg, D. Schnaible, C. and Valuev, V. Weber, M. Bouvier, E. Burt, K. Clare, R. and Ellison, J. Gary, J. W. Shirazi, S. M. A. Ghiasi Hanson, G. and Heilman, J. Jandir, P. Kennedy, E. Lacroix, F. Long, O. R. Negrete, M. Olmedo Paneva, M. I. Shrinivas, A. Si, W. Wei, H. Wimpenny, S. Yates, B. R. Branson, J. G. and Cerati, G. B. Cittolin, S. Derdzinski, M. Gerosa, R. and Holzner, A. Klein, D. Krutelyov, V. Letts, J. Macneill, I. Olivito, D. Padhi, S. Pieri, M. Sani, M. Sharma, V. Simon, S. Tadel, M. Vartak, A. Wasserbaech, S. and Welke, C. Wood, J. Wurthwein, F. Yagil, A. Della Porta, G. Zevi Amin, N. Bhandari, R. Bradmiller-Feld, J. and Campagnari, C. Dishaw, A. Dutta, V. Sevilla, M. Franco and George, C. Golf, F. Gouskos, L. Gran, J. Heller, R. and Incandela, J. Mullin, S. D. Ovcharova, A. Qu, H. and Richman, J. Stuart, D. Suarez, I. Yoo, J. Anderson, D. and Bendavid, J. Bornheim, A. Bunn, J. Duarte, J. and Lawhorn, J. M. Mott, A. Newman, H. B. Pena, C. and Spiropulu, M. Vlimant, J. R. Xie, S. Zhu, R. Y. Andrews, M. B. Ferguson, T. Paulini, M. Russ, J. Sun, M. and Vogel, H. Vorobiev, I. Weinberg, M. Cumalat, J. P. Ford, W. T. Jensen, F. Johnson, A. Krohn, M. Mulholland, T. and Stenson, K. Wagner, S. R. Alexander, J. Chaves, J. and Chu, J. Dittmer, S. Mcdermott, K. Mirman, N. Kaufman, G. Nicolas Patterson, J. R. Rinkevicius, A. Ryd, A. and Skinnari, L. Soffi, L. Tan, S. M. Tao, Z. Thom, J. and Tucker, J. Wittich, P. Zientek, M. Winn, D. Abdullin, S. and Albrow, M. Apollinari, G. Apresyan, A. Banerjee, S. and Bauerdick, L. A. T. Beretvas, A. Berryhill, J. Bhat, P. C. and Bolla, G. Burkett, K. Butler, J. N. Cheung, H. W. K. and Chlebana, F. Cihangir, S. Cremonesi, M. Elvira, V. D. and Fisk, I. Freeman, J. Gottschalk, E. Gray, L. Green, D. and Grunendahl, S. Gutsche, O. Hare, D. Harris, R. M. and Hasegawa, S. Hirschauer, J. Hu, Z. Jayatilaka, B. and Jindariani, S. Johnson, M. Joshi, U. Klima, B. Kreis, B. and Lammel, S. Linacre, J. Lincoln, D. Lipton, R. Liu, M. Liu, T. De Sa, R. Lopes Lykken, J. Maeshima, K. and Magini, N. Marraffino, J. M. Maruyama, S. Mason, D. and McBride, P. Merkel, P. Mrenna, S. Nahn, S. O'Dell, V. and Pedro, K. Prokofyev, O. Rakness, G. Ristori, L. and Sexton-Kennedy, E. Soha, A. Spalding, W. J. Spiegel, L. and Stoynev, S. Strait, J. Strobbe, N. Taylor, L. Tkaczyk, S. Tran, N. V. Uplegger, L. Vaandering, E. W. Vernieri, C. Verzocchi, M. Vidal, R. Wang, M. Weber, H. A. and Whitbeck, A. Wu, Y. Acosta, D. Avery, P. Bortignon, P. and Bourilkov, D. Brinkerhoff, A. Carnes, A. Carver, M. and Curry, D. Das, S. Field, R. D. Furic, I. K. Konigsberg, J. Korytov, A. Low, J. F. Ma, P. Matchev, K. Mei, H. and Mitselmakher, G. Rank, D. Shchutska, L. Sperka, D. and Thomas, L. Wang, J. Wang, S. Yelton, J. Linn, S. and Markowitz, P. Martinez, G. Rodriguez, J. L. Ackert, A. and Adams, T. Askew, A. Bein, S. Hagopian, S. Hagopian, V. and Johnson, K. F. Prosper, H. Santra, A. Yohay, R. and Baarmand, M. M. Bhopatkar, V. Colafranceschi, S. Hohlmann, M. Noonan, D. Roy, T. Yumiceva, F. Adams, M. R. and Apanasevich, L. Berry, D. Betts, R. R. Bucinskaite, I. and Cavanaugh, R. Evdokimov, O. Gauthier, L. Gerber, C. E. and Hofman, D. J. Jung, K. Gonzalez, I. D. Sandoval Varelas, N. and Wang, H. Wu, Z. Zakaria, M. Zhang, J. Bilki, B. and Clarida, W. Dilsiz, K. Durgut, S. Gandrajula, R. P. and Haytmyradov, M. Khristenko, V. Merlo, J. -P. Mermerkaya, H. and Mestvirishvili, A. Moeller, A. Nachtman, J. Ogul, H. and Onel, Y. Ozok, F. Penzo, A. Snyder, C. Tiras, E. and Wetzel, J. Yi, K. Anderson, I. Blumenfeld, B. Cocoros, A. Eminizer, N. Fehling, D. Feng, L. Gritsan, A. V. and Maksimovic, P. Martin, C. Osherson, M. Roskes, J. and Sarica, U. Swartz, M. Xiao, M. Xin, Y. You, C. and Al-Bataineh, A. Baringer, P. Bean, A. Boren, S. Bowen, J. Castle, J. Forthomme, L. Kenny, III, R. P. Khalil, S. and Kropivnitskaya, A. Majumder, D. Mcbrayer, W. Murray, M. and Sanders, S. Stringer, R. Takaki, J. D. Tapia Wang, Q. and Ivanov, A. Kaadze, K. Maravin, Y. Mohammadi, A. and Saini, L. K. Skhirtladze, N. Toda, S. Rebassoo, F. and Wright, D. Anelli, C. Baden, A. Baron, O. Belloni, A. and Calvert, B. Eno, S. C. Ferraioli, C. Gomez, J. A. and Hadley, N. J. Jabeen, S. Kellogg, R. G. Kolberg, T. and Kunkle, J. Lu, Y. Mignerey, A. C. Ricci-Tam, F. Shin, Y. H. Skuja, A. Tonjes, M. B. Tonwar, S. C. Abercrombie, D. and Allen, B. Apyan, A. Azzolini, V. Barbieri, R. Baty, A. Bi, R. Bierwagen, K. Brandt, S. Busza, W. Cali, I. A. D'Alfonso, M. Demiragli, Z. Di Matteo, L. and Ceballos, G. Gomez Goncharov, M. Hsu, D. Iiyama, Y. and Innocenti, G. M. Klute, M. Kovalskyi, D. Krajczar, K. and Lai, Y. S. Lee, Y. -J. Levin, A. Luckey, P. D. Maier, B. and Marini, A. C. Mcginn, C. Mironov, C. Narayanan, S. and Niu, X. Paus, C. Roland, C. Roland, G. Salfeld-Nebgen, J. Stephans, G. S. F. Tatar, K. Varma, M. Velicanu, D. and Veverka, J. Wang, J. Wang, T. W. Wyslouch, B. Yang, M. Benvenuti, A. C. Chatterjee, R. M. Evans, A. Hansen, P. Kalafut, S. Kao, S. C. Kubota, Y. Lesko, Z. Mans, J. Nourbakhsh, S. Ruckstuhl, N. Rusack, R. Tambe, N. and Turkewitz, J. Acosta, J. G. Oliveros, S. Avdeeva, E. and Bartek, R. Bloom, K. Claes, D. R. Dominguez, A. and Fangmeier, C. Suarez, R. Gonzalez Kamalieddin, R. and Kravchenko, I. Rodrigues, A. Malta Meier, F. Monroy, J. and Siado, J. E. Snow, G. R. Stieger, B. Alyari, M. Dolen, J. Godshalk, A. Harrington, C. Iashvili, I. Kaisen, J. and Kharchilava, A. Parker, A. Rappoccio, S. Roozbahani, B. and Alverson, G. Barberis, E. Hortiangtham, A. Massironi, A. and Morse, D. M. Nash, D. Orimoto, T. De Lima, R. Teixeira and Trocino, D. Wang, R. -J. Wood, D. Bhattacharya, S. and Charaf, O. Hahn, K. A. Kumar, A. Mucia, N. Odell, N. and Pollack, B. Schmitt, M. H. Sung, K. Trovato, M. Velasco, M. Dev, N. Hildreth, M. Anampa, K. Hurtado Jessop, C. and Karmgard, D. J. Kellams, N. Lannon, K. Marinelli, N. and Meng, F. Mueller, C. Musienko, Y. Planer, M. Reinsvold, A. Ruchti, R. Smith, G. Taroni, S. Wayne, M. Wolf, M. Woodard, A. Alimena, J. Antonelli, L. Bylsma, B. and Durkin, L. S. Flowers, S. Francis, B. Hart, A. Hill, C. and Hughes, R. Ji, W. Liu, B. Luo, W. Puigh, D. and Winer, B. L. Wulsin, H. W. Cooperstein, S. Driga, O. and Elmer, P. Hardenbrook, J. Hebda, P. Lange, D. Luo, J. and Marlow, D. Medvedeva, T. Mei, K. Olsen, J. Palmer, C. Piroue, P. Stickland, D. Svyatkovskiy, A. Tully, C. and Malik, S. Barker, A. Barnes, V. E. Folgueras, S. and Gutay, L. Jha, M. K. Jones, M. Jung, A. W. Khatiwada, A. and Miller, D. H. Neumeister, N. Schulte, J. F. Shi, X. and Sun, J. Wang, F. Xie, W. Parashar, N. Stupak, J. and Adair, A. Akgun, B. Chen, Z. Ecklund, K. M. Geurts, F. J. M. Guilbaud, M. Li, W. Michlin, B. Northup, M. and Padley, B. P. Roberts, J. Rorie, J. Tu, Z. Zabel, J. and Betchart, B. Bodek, A. de Barbaro, P. Demina, R. Duh, Y. T. Ferbel, T. Galanti, M. Garcia-Bellido, A. Han, J. and Hindrichs, O. Khukhunaishvili, A. Lo, K. H. Tan, P. and Verzetti, M. Agapitos, A. Chou, J. P. Gershtein, Y. and Espinosa, T. A. Gomez Halkiadakis, E. Heindl, M. Hughes, E. and Kaplan, S. Elayavalli, R. Kunnawalkam Kyriacou, S. Lath, A. Nash, K. Saka, H. Salur, S. Schnetzer, S. and Sheffield, D. Somalwar, S. Stone, R. Thomas, S. and Thomassen, P. Walker, M. Delannoy, A. G. Foerster, M. and Heideman, J. Riley, G. Rose, K. Spanier, S. Thapa, K. and Bouhali, O. Celik, A. Dalchenko, M. De Mattia, M. and Delgado, A. Dildick, S. Eusebi, R. Gilmore, J. Huang, T. and Juska, E. Kamon, T. Mueller, R. Pakhotin, Y. Patel, R. Perloff, A. Pernie, L. Rathjens, D. Safonov, A. and Tatarinov, A. Ulmer, K. A. Akchurin, N. Cowden, C. and Damgov, J. De Guio, F. Dragoiu, C. Dudero, P. R. and Faulkner, J. Gurpinar, E. Kunori, S. Lamichhane, K. Lee, S. W. Libeiro, T. Peltola, T. Undleeb, S. Volobouev, I. and Wang, Z. Greene, S. Gurrola, A. Janjam, R. Johns, W. and Maguire, C. Melo, A. Ni, H. Sheldon, P. Tuo, S. and Velkovska, J. Xu, Q. Arenton, M. W. Barria, P. Cox, B. and Goodell, J. Hirosky, R. Ledovskoy, A. Li, H. Neu, C. and Sinthuprasith, T. Sun, X. Wang, Y. Wolfe, E. Xia, F. and Clarke, C. Harr, R. Karchin, P. E. Sturdy, J. and Belknap, D. A. Buchanan, J. Caillol, C. Dasu, S. Dodd, L. Duric, S. Gomber, B. Grothe, M. Herndon, M. and Herve, A. Klabbers, P. Lanaro, A. Levine, A. Long, K. and Loveless, R. Ojalvo, I. Perry, T. Pierro, G. A. and Polese, G. Ruggles, T. Savin, A. Smith, N. Smith, W. H. and Taylor, D. Woods, N. CMS Collaboration

Published
2018

42. Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μ m up to 180 K

Author

Mathieu Bertrand, H. Sigg, Q. M. Thai, J. Aubin, V. Reboud, T. Zabel, D. Rouchon, A. Chelnokov, J. Rothman, Alban Gassenq, L. Milord, F. Armand Pilon, J.M. Hartmann, Kevin Guilloy, V. Calvo, Nicolas Pauc, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Silicon Nanoelectronics Photonics and Structures (SiNaps), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Paul Scherrer Institute (PSI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire des technologies de la microélectronique (LTM ), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
Materials science, Physics and Astronomy (miscellaneous), FOS: Physical sciences, 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, Quality (physics), law, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, 021001 nanoscience & nanotechnology, Laser, Wavelength, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Optoelectronics, Photonics, 0210 nano-technology, business, Lasing threshold, Optics (physics.optics), Physics - Optics
Abstract

Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resulted from the use of higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using Reduced Pressure CVD. The fabricated GeSn micro-disks with 13% and 16% of Sn showed lasing operation at 2.6 um and 3.1 um wavelengths, respectively. For the longest wavelength (i.e 3.1 um), lasing was demonstrated up to 180 K, with a threshold of 377 kW/cm2 at 25 K., 15 pages with supplementary information. 6 figures and 2 tables in total

Published
2017

43. Lasing of optically pumped GeSn micro-structures grown on step-graded GeSn buffers

Author

Hans Sigg, Vincent Calvo, Alexei Chelnokov, J. M. Hartmann, J. Aubin, T. Zabel, Eugénie Martinez, Alban Gassenq, Mathieu Bertrand, Christophe Licitra, L. Milord, Q. M. Thai, Denis Rouchon, Nicolas Pauc, J. Rothman, Vincent Reboud, and F. Armand Pilon

Subjects
Optical pumping, Materials science, Strain (chemistry), Etching (microfabrication), business.industry, Optoelectronics, Stimulated emission, Photonics, business, Micro structure, Lasing threshold, Buffer (optical fiber)
Abstract

We report optically pumped lasing from GeSn micro-disks with high Sn content active GeSn layers. Buffer layers made by a step-growth show enhanced performances compared to conventional Ge strain relaxed buffers.

Published
2017

44. Will Ge and GeSn lasers enable Si photonics in the Mid-Infrared?

Author

Q. M. Thai, Vincent Reboud, Hans Sigg, Alban Gassenq, J. Rothman, Kevin Guilloy, J. Aubin, T. Zabel, J. M. Hartmann, Mathieu Bertrand, Nicolas Pauc, Alexei Chelnokov, Vincent Calvo, and L. Milord

Subjects
3D optical data storage, Materials science, Silicon photonics, Silicon, Hybrid silicon laser, business.industry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, law.invention, 010309 optics, Optical pumping, chemistry, law, 0103 physical sciences, Optoelectronics, Photonics, 0210 nano-technology, business, Photonic crystal
Abstract

For the near-infrared (near-IR) optical data communications, silicon photonics became a mature technology. Building on the technological developments associated with datacoms, silicon photonics now expands into the mid-infrared (mid-IR), mostly for the optical gas sensing. Here as well, the development is hampered by the absence of monolithically integrated laser sources compatible with the CMOS fab processing.

Published
2017

45. Inductively coupled plasma etching of germanium tin for the fabrication of photonic components

Author

Samuel Tardif, J. Aubin, L. Milord, A. Chelnokov, V. Reboud, Kevin Guilloy, J. Rothman, Nicolas Pauc, V. Calvo, Alban Gassenq, J.M. Hartmann, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Silicon Nanoelectronics Photonics and Structures (SiNaps), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Projet IBEA Nanoscience, Projet CEA DRF-DRT Phare 'Photonique', Projet CEA DRF-DRT Phare 'Operando', Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), and Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
010302 applied physics, Plasma etching, Materials science, Silicon photonics, business.industry, chemistry.chemical_element, Germanium, 02 engineering and technology, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, Isotropic etching, Semiconductor, chemistry, Etching (microfabrication), 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, Tin, Lasing threshold, ComputingMilieux_MISCELLANEOUS
Abstract

The demonstration of a CMOS compatible laser working at room temperature has been eagerly sought since the beginning of silicon photonics. Although bulk Germanium (Ge) is an indirect bandgap material, Tin (Sn) can be incorporated into it to turn the resulting alloy into a direct band-gap semiconductor. Recently, lasing was demonstrated at cryogenic temperatures using thick GeSn layers with Sn contents of 8.5% and above. Optical micro-cavities were later added to reduce the laser threshold. Here, an under-etching of thick GeSn layers selectively with regard to Ge confines optical modes and relaxes the compressive strain built inside the layers, resulting in more direct band-gaps behavior. Such photonic components rely on technological processes dedicated to GeSn. In this paper, we present our recent developments on (i) anisotropic etching of GeSn and (ii) isotropic etching of Ge selective with regard to GeSn. Even for GeSn with a Sn content as low as 6%, the etching selectivity is of 57. For 8% Sn content, the selectivity reaches 433. We used these processes to fabricate micro-disk optical cavities in thick GeSn layers. Under continuous wave pumping, optical modes were detected from photoluminescence spectra.

Published
2017

46. Raman spectral shift versus strain and composition in GeSn layers with: 6 to 15% Sn contents

Author

J.M. Hartmann, A. Chelnokov, J. Rothman, D. Rouchon, Kevin Guilloy, V. Reboud, J. Aubin, Alban Gassenq, L. Milord, Nicolas Pauc, V. Calvo, Silicon Nanoelectronics Photonics and Structures (SiNaps), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
Materials science, Physics and Astronomy (miscellaneous), Analytical chemistry, FOS: Physical sciences, 02 engineering and technology, Spectral shift, 01 natural sciences, symbols.namesake, 0103 physical sciences, Chemical composition, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Condensed Matter - Materials Science, Strain (chemistry), business.industry, Materials Science (cond-mat.mtrl-sci), 021001 nanoscience & nanotechnology, Microstructure, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Semiconductor, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], symbols, Composition (visual arts), Direct and indirect band gaps, 0210 nano-technology, business, Raman spectroscopy
Abstract

GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes an important challenge to improve GeSn devices. Strain micro-measurements are usually performed by Raman spectroscopy. However, different relationships linking the Raman spectral shifts to the built-in strain can be found in the literature. They were deduced from studies on low Sn content GeSn layers (i.e. xSn, Comment: 14 pages, 4 figures, submitted to Applied Physics Letters 2017

Published
2017

47. Search for supersymmetry in the all-hadronic final state using top quark tagging in pp collisions at root s=13 TeV

Author

Khachatryan, V. Sirunyan, A. M. Tumasyan, A. Adam, W. and Asilar, E. Bergauer, T. Brandstetter, J. Brondolin, E. and Dragicevic, M. Eroe, J. Flechl, M. Friedl, M. and Fruehwirth, R. Ghete, V. M. Hartl, C. Hoermann, N. and Hrubec, J. Jeitler, M. Koenig, A. Kraetschmer, I. Liko, D. Matsushita, T. Mikulec, I. Rabady, D. Rad, N. and Rahbaran, B. Rohringer, H. Schieck, J. Strauss, J. and Waltenberger, W. Wulz, C. -E. Dvornikov, O. Makarenko, V. and Zykunov, V. Mossolov, V. Shumeiko, N. Gonzalez, J. Suarez Alderweireldt, S. De Wolf, E. A. Janssen, X. and Lauwers, J. Van de Klundert, M. Van Haevermaet, H. Van Mechelen, P. Van Remortel, N. Van Spilbeeck, A. Abu Zeid, S. and Blekman, F. D'Hondt, J. Daci, N. De Bruyn, I. and Deroover, K. Lowette, S. Moortgat, S. Moreels, L. and Olbrechts, A. Python, Q. Tavernier, S. Van Doninck, W. and Van Mulders, P. Van Parijs, I. Brun, H. Clerbaux, B. De Lentdecker, G. Delannoy, H. Fasanella, G. Favart, L. and Goldouzian, R. Grebenyuk, A. Karapostoli, G. Lenzi, T. and Leonard, A. Luetic, J. Maerschalk, T. Marinov, A. and Randle-Conde, A. Seva, T. Vander Velde, C. Vanlaer, P. and Vannerom, D. Yonamine, R. Zenoni, F. Zhang, F. Cimmino, A. Cornelis, T. Dobur, D. Fagot, A. Garcia, G. Gul, M. Khvastunov, I. Poyraz, D. Salva, S. Schofbeck, R. and Sharma, A. Tytgat, M. Van Driessche, W. Yazgan, E. and Zaganidis, N. Bakhshiansohi, H. Beluffi, C. Bondu, O. and Brochet, S. Bruno, G. Caudron, A. De Visscher, S. and Delaere, C. Delcourt, M. Francois, B. Giammanco, A. and Jafari, A. Jez, P. Komm, M. Krintiras, G. Lemaitre, V. and Magitteri, A. Mertens, A. Musich, M. Nuttens, C. and Piotrzkowski, K. Quertenmont, L. Selvaggi, M. Marono, M. Vidal Wertz, S. Beliy, N. Alda Junior, W. L. Alves, F. L. Alves, G. A. Brito, L. Hensel, C. Moraes, A. Pol, M. E. Rebello Teles, P. Belchior Batista Das Chagas, E. and Carvalho, W. Chinellato, J. Custodio, A. Da Costa, E. M. and Da Silveira, G. G. De Jesus Damiao, D. De Oliveira Martins, C. and Fonseca De Souza, S. Huertas Guativa, L. M. Malbouisson, H. and Matos Figueiredo, D. Mora Herrera, C. Mundim, L. Nogima, H. Prado Da Silva, W. L. Santoro, A. Sznajder, A. and Tonelli Manganote, E. J. Vilela Pereira, A. Ahuja, S. and Bernardes, C. A. Dogra, S. Fernandez Perez Tomei, T. R. and Gregores, E. M. Mercadante, P. G. Moon, C. S. Novaes, S. F. and Padula, Sandra S. Abad, D. Romero Vargas, J. C. Ruiz and Aleksandrov, A. Hadjiiska, R. Iaydjiev, P. Rodozov, M. and Stoykova, S. Sultanov, G. Vutova, M. Dimitrov, A. and Glushkov, I. Litov, L. Pavlov, B. Petkov, P. Fang, W. and Ahmad, M. Bian, J. G. Chen, G. M. Chen, H. S. Chen, M. Chen, Y. Cheng, T. Jiang, C. H. Leggat, D. Liu, Z. Romeo, F. Shaheen, S. M. Spiezia, A. Tao, J. and Wang, C. Wang, Z. Zhang, H. Zhao, J. Ban, Y. Chen, G. Li, Q. Liu, S. Mao, Y. Qian, S. J. Wang, D. and Xu, Z. Avila, C. Cabrera, A. Chaparro Sierra, L. F. and Florez, C. Gomez, J. P. Gonzalez Hernandez, C. F. Ruiz Alvarez, J. D. Sanabria, J. C. Godinovic, N. Lelas, D. and Puljak, I. Ribeiro Cipriano, P. M. Sculac, T. Antunovic, Z. and Kovac, M. Brigljevic, V. Ferencek, D. Kadija, K. and Micanovic, S. Sudic, L. Susa, T. Attikis, A. and Mavromanolakis, G. Mousa, J. Nicolaou, C. Ptochos, F. and Razis, P. A. Rykaczewski, H. Tsiakkouri, D. Finger, M. and Finger, Jr., M. Jarrin, E. Carrera El-khateeb, E. Elgammal, S. Mohamed, A. Kadastik, M. Perrini, L. Raidal, M. and Tiko, A. Veelken, C. Eerola, P. Pekkanen, J. and Voutilainen, M. Harkonen, J. Jarvinen, T. Karimaki, V. and Kinnunen, R. Lampen, T. Lassila-Perini, K. Lehti, S. and Linden, T. Luukka, P. Tuominiemi, J. Tuovinen, E. and Wendland, L. Talvitie, J. Tuuva, T. Besancon, M. and Couderc, F. Dejardin, M. Denegri, D. Fabbro, B. Faure, J. L. Favaro, C. Ferri, F. Ganjour, S. Ghosh, S. and Givernaud, A. Gras, P. de Monchenault, G. Hamel Jarry, P. and Kucher, I. Locci, E. Machet, M. Malcles, J. Rander, J. Rosowsky, A. Titov, M. Zghiche, A. Abdulsalam, A. and Antropov, I. Baffioni, S. Beaudette, F. Busson, P. and Cadamuro, L. Chapon, E. Charlot, C. Davignon, O. de Cassagnac, R. Granier Jo, M. Lisniak, S. Mine, P. and Nguyen, M. Ochando, C. Ortona, G. Paganini, P. Pigard, P. Regnard, S. Salerno, R. Sirois, Y. Strebler, T. and Yilmaz, Y. Zabi, A. Agram, J. -L. Andrea, J. Aubin, A. and Bloch, D. Brom, J. -M. Buttignol, M. Chabert, E. C. and Chanon, N. Collard, C. Conte, E. Coubez, X. Fontaine, J. -C. Gele, D. Goerlach, U. Le Bihan, A. -C. Skovpen, K. and Van Hove, P. Gadrat, S. Beauceron, S. Bernet, C. and Boudoul, G. Bouvier, E. Montoya, C. A. Carrillo Chierici, R. and Contardo, D. Courbon, B. Depasse, P. El Mamouni, H. and Fan, J. Fay, J. Gascon, S. Gouzevitch, M. Grenier, G. and Ille, B. Lagarde, F. Laktineh, I. B. Lethuillier, M. and Mirabito, L. Pequegnot, A. L. Perries, S. Popov, A. and Sabes, D. Sordini, V. Donckt, M. Vander Verdier, P. and Viret, S. Khvedelidze, A. Tsamalaidze, Z. Autermann, C. and Beranek, S. Feld, L. Heister, A. Kiesel, M. K. Klein, K. and Lipinski, M. Ostapchuk, A. Preuten, M. Raupach, F. and Schael, S. Schomakers, C. Schulz, J. Verlage, T. Weber, H. Zhukov, V. Albert, A. Brodski, M. Dietz-Laursonn, E. and Duchardt, D. Endres, M. Erdmann, M. Erdweg, S. Esch, T. Fischer, R. Gueth, A. Hamer, M. Hebbeker, T. and Heidemann, C. Hoepfner, K. Knutzen, S. Merschmeyer, M. and Meyer, A. Millet, P. Mukherjee, S. Olschewski, M. and Padeken, K. Pook, T. Radziej, M. Reithler, H. Rieger, M. and Scheuch, F. Sonnenschein, L. Teyssier, D. Thueer, S. and Cherepanov, V. Fluegge, G. Hoehle, F. Kargoll, B. Kress, T. Kuensken, A. Lingemann, J. Mueller, T. Nehrkorn, A. and Nowack, A. Nugent, I. M. Pistone, C. Pooth, O. and Stahl, A. Martin, M. Aldaya Arndt, T. Asawatangtrakuldee, C. and Beernaert, K. Behnke, O. Behrens, U. Bin Anuar, A. A. and Borras, K. Campbell, A. Connor, P. Contreras-Campana, C. and Costanza, F. Pardos, C. Diez Dolinska, G. Eckerlin, G. and Eckstein, D. Eichhorn, T. Eren, E. Gallo, E. Garcia, J. Garay Geiser, A. Gizhko, A. Luyando, J. M. Grados and Gunnellini, P. Harb, A. Hauk, J. Hempel, M. Jung, H. and Kalogeropoulos, A. Karacheban, O. Kasemann, M. Keaveney, J. and Kleinwort, C. Korol, I. Kruecker, D. Lange, W. and Lelek, A. Leonard, J. Lipka, K. Lobanov, A. Lohmann, W. and Mankel, R. Melzer-Pellmann, I. -A. Meyer, A. B. Mittag, G. Mnich, J. Mussgiller, A. Ntomari, E. Pitzl, D. and Placakyte, R. Raspereza, A. Roland, B. Sahin, M. O. and Saxena, P. Schoerner-Sadenius, T. Seitz, C. Spannagel, S. and Stefaniuk, N. Van Onsem, G. P. Walsh, R. Wissing, C. and Blobel, V. Vignali, M. Centis Draeger, A. R. Dreyer, T. and Garutti, E. Gonzalez, D. Haller, J. Hoffmann, M. Junkes, A. Klanner, R. Kogler, R. Kovalchuk, N. Lapsien, T. and Lenz, T. Marchesini, I. Marconi, D. Meyer, M. Niedziela, M. Nowatschin, D. Pantaleo, F. Peiffer, T. Perieanu, A. and Poehlsen, J. Sander, C. Scharf, C. Schleper, P. and Schmidt, A. Schumann, S. Schwandt, J. Stadie, H. and Steinbrueck, G. Stober, F. M. Stoever, M. Tholen, H. and Troendle, D. Usai, E. Vanelderen, L. Vanhoefer, A. and Vormwald, B. Akbiyik, M. Barth, C. Baur, S. Baus, C. and Berger, J. Butz, E. Caspart, R. Chwalek, T. Colombo, F. and De Boer, W. Dierlamm, A. Fink, S. Freund, B. Friese, R. Giffels, M. Gilbert, A. Goldenzweig, P. Haitz, D. and Hartmann, F. Heindl, S. M. Husemann, U. Katkov, I. and Kudella, S. Pardo, P. Lobelle Mildner, H. Mozer, M. U. and Mueller, Th. Plagge, M. Quast, G. Rabbertz, K. Roecker, S. Roscher, F. Schroeder, M. Shvetsov, I. Sieber, G. and Simonis, H. J. Ulrich, R. Wagner-Kuhr, J. Wayand, S. and Weber, M. Weiler, T. Williamson, S. Woehrmann, C. Wolf, R. Anagnostou, G. Daskalakis, G. Geralis, T. and Giakoumopoulou, V. A. Kyriakis, A. Loukas, D. Topsis-Giotis, I. Kesisoglou, S. Panagiotou, A. Saoulidou, N. Tziaferi, E. Evangelou, I. Flouris, G. Foudas, C. Kokkas, P. and Loukas, N. Manthos, N. Papadopoulos, I. Paradas, E. and Filipovic, N. Bencze, G. Hajdu, C. Horvath, D. Sikler, F. Veszpremi, V. Vesztergombi, G. Zsigmond, A. J. Beni, N. Czellar, S. Karancsi, J. Makovec, A. Molnar, J. and Szillasi, Z. Bartok, M. Raics, P. Trocsanyi, Z. L. and Ujvari, B. Bahinipati, S. Choudhury, S. Mal, P. Mandal, K. Nayak, A. Sahoo, D. K. Sahoo, N. Swain, S. K. and Bansal, S. Beri, S. B. Bhatnagar, V. Chawla, R. and Bhawandeep, U. Kalsi, A. K. Kaur, A. Kaur, M. Kumar, R. and Kumari, P. Mehta, A. Mittal, M. Singh, J. B. Walia, G. Kumar, Ashok Bhardwaj, A. Choudhary, B. C. Garg, R. B. Keshri, S. Malhotra, S. Naimuddin, M. Nishu, N. and Ranjan, K. Sharma, R. Sharma, V. Bhattacharya, R. and Bhattacharya, S. Chatterjee, K. Dey, S. Dutt, S. Dutta, S. Ghosh, S. Majumdar, N. Modak, A. Mondal, K. and Mukhopadhyay, S. Nandan, S. Purohit, A. Roy, A. Roy, D. and Chowdhury, S. Roy Sarkar, S. Sharan, M. Thakur, S. and Behera, P. K. Chudasama, R. Dutta, D. Jha, V. Kumar, V. and Mohanty, A. K. Netrakanti, P. K. Pant, L. M. Shukla, P. and Topkar, A. Aziz, T. Dugad, S. Kole, G. Mahakud, B. and Mitra, S. Mohanty, G. B. Parida, B. Sur, N. Sutar, B. Banerjee, S. Bhowmik, S. Dewanjee, R. K. Ganguly, S. and Guchait, M. Jain, Sa. Kumar, S. Maity, M. Majumder, G. Mazumdar, K. Sarkar, T. Wickramage, N. Chauhan, S. and Dube, S. Hegde, V. Kapoor, A. Kothekar, K. Pandey, S. Rane, A. Sharma, S. Behnamian, H. Chenarani, S. and Tadavani, E. Eskandari Etesami, S. M. Fahim, A. Khakzad, M. and Najafabadi, M. Mohammadi Naseri, M. Mehdiabadi, S. Paktinat and Hosseinabadi, F. Rezaei Safarzadeh, B. Zeinali, M. and Felcini, M. Grunewald, M. Abbrescia, M. Calabria, C. and Caputo, C. Colaleo, A. Creanza, D. Cristella, L. De Filippis, N. De Palma, M. Fiore, L. Iaselli, G. Maggi, G. Maggi, M. Miniello, G. My, S. Nuzzo, S. Pompili, A. Pugliese, G. Radogna, R. Ranieri, A. Selvaggi, G. and Silvestris, L. Venditti, R. Verwillige, P. Abbiendi, G. and Battilana, C. Bonacorsi, D. Braibant-Giacomelli, S. and Brigliadori, L. Campanini, R. Capiluppi, P. Castro, A. and Cavallo, F. R. Chhibra, S. S. Codispoti, G. Cuffiani, M. and Dallavalle, G. M. Fabbri, F. Fanfani, A. Fasanella, D. and Giacomelli, P. Grandi, C. Guiducci, L. Marcellini, S. and Masetti, G. Montanari, A. Navarria, F. L. Perrotta, A. and Rossi, A. M. Rovelli, T. Siroli, G. P. Tosi, N. Albergo, S. Costa, S. Di Mattia, A. Giordano, F. Potenza, R. and Tricomi, A. Tuve, C. Barbagli, G. Ciulli, V. Civinini, C. D'Alessandro, R. Focardi, E. Lenzi, P. Meschini, M. and Paoletti, S. Sguazzoni, G. Viliani, L. Benussi, L. and Bianco, S. Fabbri, F. Piccolo, D. Primavera, F. and Calvelli, V. Ferro, F. Lo Vetere, M. Monge, M. R. and Robutti, E. Tosi, S. Brianza, L. Dinardo, M. E. and Fiorendi, S. Gennai, S. Ghezzi, A. Govoni, P. Malberti, M. Malvezzi, S. Manzoni, R. A. Menasce, D. Moroni, L. and Paganoni, M. Pedrini, D. Pigazzini, S. Ragazzi, S. and de Fatis, T. Tabarelli Buontempo, S. Cavallo, N. De Nardo, G. Di Guida, S. Esposito, M. Fabozzi, F. Fienga, F. and Iorio, A. O. M. 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Gurrola, A. Janjam, R. Johns, W. Maguire, C. Melo, A. Ni, H. and Sheldon, P. Tuo, S. Velkovska, J. Xu, Q. Arenton, M. W. Barria, P. Cox, B. Goodell, J. Hirosky, R. and Ledovskoy, A. Li, H. Neu, C. Sinthuprasith, T. Sun, X. and Wang, Y. Wolfe, E. Xia, F. Clarke, C. Harr, R. and Karchin, P. E. Sturdy, J. Belknap, D. A. Buchanan, J. and Caillol, C. Dasu, S. Dodd, L. Duric, S. Gomber, B. and Grothe, M. Herndon, M. Herve, A. Klabbers, P. Lanaro, A. and Levine, A. Long, K. Loveless, R. Ojalvo, I. Perry, T. Pierro, G. A. Polese, G. Ruggles, T. Savin, A. and Smith, N. Smith, W. H. Taylor, D. Woods, N. CMS Collaboration

Subjects
High Energy Physics::Phenomenology, High Energy Physics::Experiment, Nuclear Experiment
Abstract

A search is presented for supersymmetry in all-hadronic events with missing transverse momentum and tagged top quarks. The data sample was collected with the CMS detector at the LHC and corresponds to an integrated luminosity of 2.3 fb(-1) of proton-proton collisions at a center-of-mass energy of 13 TeV. Search regions are defined using the properties of reconstructed jets, the multiplicity of bottom and top quark candidates, and an imbalance in transverse momentum. With no statistically significant excess of events observed beyond the expected contributions from the standard model, we set exclusion limits at 95% confidence level on the masses of new particles in the context of simplified models of direct and gluino-mediated top squark production. For direct top squark production with decays to a top quark and a neutralino, top squark masses up to 740 GeV and neutralino masses up to 240 GeV are excluded. Gluino masses up to 1550 GeV and neutralino masses up to 900 GeV are excluded for a gluino-mediated production case, where each of the pair-produced gluinos decays to a top-antitop quark pair and a neutralino.

Published
2017

48. Search for single production of vector-like quarks decaying into a b quark and a W boson in proton–proton collisions at s=13TeV

Author

Sirunyan, A.M. Tumasyan, A. Adam, W. Asilar, E. Bergauer, T. Brandstetter, J. Brondolin, E. Dragicevic, M. Erö, J. Flechl, M. Friedl, M. Frühwirth, R. Ghete, V.M. Hartl, C. Hörmann, N. Hrubec, J. Jeitler, M. König, A. Krätschmer, I. Liko, D. Matsushita, T. Mikulec, I. Rabady, D. Rad, N. Rahbaran, B. Rohringer, H. Schieck, J. Strauss, J. Waltenberger, W. Wulz, C.-E. Dvornikov, O. Makarenko, V. Mossolov, V. Suarez Gonzalez, J. Zykunov, V. Shumeiko, N. Alderweireldt, S. De Wolf, E.A. Janssen, X. Lauwers, J. Van De Klundert, M. Van Haevermaet, H. Van Mechelen, P. Van Remortel, N. Van Spilbeeck, A. Abu Zeid, S. Blekman, F. D'Hondt, J. Daci, N. De Bruyn, I. Deroover, K. Lowette, S. Moortgat, S. Moreels, L. Olbrechts, A. Python, Q. Skovpen, K. Tavernier, S. Van Doninck, W. Van Mulders, P. Van Parijs, I. Brun, H. Clerbaux, B. De Lentdecker, G. Delannoy, H. Fasanella, G. Favart, L. Goldouzian, R. Grebenyuk, A. Karapostoli, G. Lenzi, T. Léonard, A. Luetic, J. Maerschalk, T. Marinov, A. Randle-conde, A. Seva, T. Vander Velde, C. Vanlaer, P. Vannerom, D. Yonamine, R. Zenoni, F. Zhang, F. Cimmino, A. Cornelis, T. Dobur, D. Fagot, A. Gul, M. Khvastunov, I. Poyraz, D. Salva, S. Schöfbeck, R. Tytgat, M. Van Driessche, W. Yazgan, E. Zaganidis, N. Bakhshiansohi, H. Beluffi, C. Bondu, O. Brochet, S. Bruno, G. Caudron, A. De Visscher, S. Delaere, C. Delcourt, M. Francois, B. Giammanco, A. Jafari, A. Komm, M. Krintiras, G. Lemaitre, V. Magitteri, A. Mertens, A. Musich, M. Piotrzkowski, K. Quertenmont, L. Selvaggi, M. Vidal Marono, M. Wertz, S. Beliy, N. Aldá Júnior, W.L. Alves, F.L. Alves, G.A. Brito, L. Hensel, C. Moraes, A. Pol, M.E. Rebello Teles, P. Belchior Batista Das Chagas, E. Carvalho, W. Chinellato, J. Custódio, A. Da Costa, E.M. Da Silveira, G.G. De Jesus Damiao, D. De Oliveira Martins, C. Fonseca De Souza, S. Huertas Guativa, L.M. Malbouisson, H. Matos Figueiredo, D. Mora Herrera, C. Mundim, L. Nogima, H. Prado Da Silva, W.L. Santoro, A. Sznajder, A. Tonelli Manganote, E.J. Torres Da Silva De Araujo, F. Vilela Pereira, A. Ahuja, S. Bernardes, C.A. Dogra, S. Fernandez Perez Tomei, T.R. Gregores, E.M. Mercadante, P.G. Moon, C.S. Novaes, S.F. Padula, S.S. Romero Abad, D. Ruiz Vargas, J.C. Aleksandrov, A. Hadjiiska, R. Iaydjiev, P. Rodozov, M. Stoykova, S. Sultanov, G. Vutova, M. Dimitrov, A. Glushkov, I. Litov, L. Pavlov, B. Petkov, P. Fang, W. Ahmad, M. Bian, J.G. Chen, G.M. Chen, H.S. Chen, M. Chen, Y. Cheng, T. Jiang, C.H. Leggat, D. Liu, Z. Romeo, F. Ruan, M. Shaheen, S.M. Spiezia, A. Tao, J. Wang, C. Wang, Z. Zhang, H. Zhao, J. Ban, Y. Chen, G. Li, Q. Liu, S. Mao, Y. Qian, S.J. Wang, D. Xu, Z. Avila, C. Cabrera, A. Chaparro Sierra, L.F. Florez, C. Gomez, J.P. González Hernández, C.F. Ruiz Alvarez, J.D. Sanabria, J.C. Godinovic, N. Lelas, D. Puljak, I. Ribeiro Cipriano, P.M. Sculac, T. Antunovic, Z. Kovac, M. Brigljevic, V. Ferencek, D. Kadija, K. Mesic, B. Susa, T. Attikis, A. Mavromanolakis, G. Mousa, J. Nicolaou, C. Ptochos, F. Razis, P.A. Rykaczewski, H. Tsiakkouri, D. Finger, M. Finger, M., Jr. Carrera Jarrin, E. El-khateeb, E. Elgammal, S. Mohamed, A. Kadastik, M. Perrini, L. Raidal, M. Tiko, A. Veelken, C. Eerola, P. Pekkanen, J. Voutilainen, M. Härkönen, J. Järvinen, T. Karimäki, V. Kinnunen, R. Lampén, T. Lassila-Perini, K. Lehti, S. Lindén, T. Luukka, P. Tuominiemi, J. Tuovinen, E. Wendland, L. Talvitie, J. Tuuva, T. Besancon, M. Couderc, F. Dejardin, M. Denegri, D. Fabbro, B. Faure, J.L. Favaro, C. Ferri, F. Ganjour, S. Ghosh, S. Givernaud, A. Gras, P. Hamel de Monchenault, G. Jarry, P. Kucher, I. Locci, E. Machet, M. Malcles, J. Rander, J. Rosowsky, A. Titov, M. Abdulsalam, A. Antropov, I. Baffioni, S. Beaudette, F. Busson, P. Cadamuro, L. Chapon, E. Charlot, C. Davignon, O. Granier de Cassagnac, R. Jo, M. Lisniak, S. Miné, P. Nguyen, M. Ochando, C. Ortona, G. Paganini, P. Pigard, P. Regnard, S. Salerno, R. Sirois, Y. Strebler, T. Yilmaz, Y. Zabi, A. Zghiche, A. Agram, J.-L. Andrea, J. 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Spanier, S. Thapa, K. Bouhali, O. Celik, A. Dalchenko, M. De Mattia, M. Delgado, A. Dildick, S. Eusebi, R. Gilmore, J. Huang, T. Juska, E. Kamon, T. Mueller, R. Pakhotin, Y. Patel, R. Perloff, A. Perniè, L. Rathjens, D. Safonov, A. Tatarinov, A. Ulmer, K.A. Akchurin, N. Cowden, C. Damgov, J. De Guio, F. Dragoiu, C. Dudero, P.R. Faulkner, J. Gurpinar, E. Kunori, S. Lamichhane, K. Lee, S.W. Libeiro, T. Peltola, T. Undleeb, S. Volobouev, I. Wang, Z. Greene, S. Gurrola, A. Janjam, R. Johns, W. Maguire, C. Melo, A. Ni, H. Sheldon, P. Tuo, S. Velkovska, J. Xu, Q. Arenton, M.W. Barria, P. Cox, B. Goodell, J. Hirosky, R. Ledovskoy, A. Li, H. Neu, C. Sinthuprasith, T. Sun, X. Wang, Y. Wolfe, E. Xia, F. Clarke, C. Harr, R. Karchin, P.E. Sturdy, J. Belknap, D.A. Buchanan, J. Caillol, C. Dasu, S. Dodd, L. Duric, S. Gomber, B. Grothe, M. Herndon, M. Hervé, A. Klabbers, P. Lanaro, A. Levine, A. Long, K. Loveless, R. Perry, T. Pierro, G.A. Polese, G. Ruggles, T. Savin, A. Smith, N. Smith, W.H. Taylor, D. Woods, N. The CMS Collaboration

Subjects
High Energy Physics::Lattice, Nuclear Theory, High Energy Physics::Phenomenology, High Energy Physics::Experiment
Abstract

A search is presented for a heavy vector-like quark, decaying into a b quark and a W boson, which is produced singly in association with a light flavor quark and a b quark. The analysis is performed using a data sample of proton–proton collisions at a center-of-mass energy of s=13TeV collected at the LHC in 2015. The data set used in the analysis corresponds to an integrated luminosity of 2.3fb−1. The search is carried out using events containing one electron or muon, at least one b-tagged jet with large transverse momentum, at least one jet in the forward region of the detector, and missing transverse momentum. No excess over the standard model prediction is observed. Upper limits are placed on the production cross section of heavy exotic quarks: a T quark with a charge of 2/3, and a Y quark with a charge of −4/3. For Y quarks with coupling of 0.5 and B(Y→bW)=100%, the observed (expected) lower mass limits are 1.40 (1.0)TeV. This is the most stringent limit to date on the single production of the Y vector-like quark. © 2017 The Author(s)

Published
2017

49. Search for high-mass Z gamma resonances in e(+)e(-)gamma and mu(+)mu(-)gamma final states in proton-proton collisions at root s=8 and 13 TeV

Author

Khachatryan, V. Sirunyan, A. M. Tumasyan, A. Adam, W. and Asilar, E. Bergauer, T. Brandstetter, J. Brondolin, E. and Dragicevic, M. Eroe, J. Flechl, M. Friedl, M. and Fruehwirth, R. Ghete, V. M. Hartl, C. Hoermann, N. and Hrubec, J. Jeitler, M. Koenig, A. Kraetschmer, I. Liko, D. Matsushita, T. Mikulec, I. Rabady, D. Rad, N. and Rahbaran, B. Rohringer, H. Schieck, J. Strauss, J. and Waltenberger, W. Wulz, C. -E Dvornikov, O. Makarenko, V. and Zykunov, V. Mossolov, V. Shumeiko, N. Gonzalez, J. Suarez and Alderweireldt, S. De Wolf, E. A. Janssen, X. Lauwers, J. and Van De Klundert, M. Van Haevermaet, H. Van Mechelen, P. and Van Remortel, N. Van Spilbeeck, A. Abu Zeid, S. Blekman, F. and D'Hondt, J. Daci, N. De Bruyn, I. Deroover, K. and Heracleous, N. Lowette, S. Moortgat, S. Moreels, L. and Olbrechts, A. Python, Q. Tavernier, S. Van Doninck, W. and Van Mulders, P. Van Parijs, I. Brun, H. Clerbaux, B. De Lentdecker, G. Delannoy, H. Fasanella, G. Favart, L. and Goldouzian, R. Grebenyuk, A. Karapostoli, G. Lenzi, T. and Leonard, A. Luetic, J. Maer-schalk, T. Marinov, A. and Randle-conde, A. Seva, T. Velde, C. Vander Vanlaer, P. and Yonamine, R. Zenoni, F. Zhang, F. Cimmino, A. Cornelis, T. Dobur, D. Fagot, A. Garcia, G. Gul, M. Poyraz, D. and Salva, S. Schoefbeck, R. Sharma, A. Tytgat, M. Van Driessche, W. Yazgan, E. Zaganidis, N. Bakhshiansohi, H. and Beluffi, C. Bondu, O. Brochet, S. Bruno, G. Caudron, A. and De Visscher, S. Delaere, C. Delcourt, M. Francois, B. and Giammanco, A. Jafari, A. Jez, P. Komm, M. Lemaitre, V. Magitteri, A. Mertens, A. Musich, M. Nuttens, C. and Piotrzkowski, K. Quertenmont, L. Selvaggi, M. Marono, M. Vidal Wertz, S. Beliy, N. Alda, Jr., W. L. Alves, F. L. and Alves, G. A. Brito, L. Hensel, C. Moraes, A. Pol, M. E. Teles, P. Rebello Das Chagas, E. Belchior Batista and Carvalho, W. Chinellato, J. Custodio, A. Da Costa, E. M. and Da Silveira, G. G. De Jesus Damiao, D. De Oliveira Martins, C. and De Souza, S. Fonseca Guativa, L. M. 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Gomez and Halkiadakis, E. Heindl, M. Hidas, D. Hughes, E. Kaplan, S. Elayavalli, R. Kunnawalkam Kyriacou, S. Lath, A. and Nash, K. Saka, H. Salur, S. Schnetzer, S. Sheffield, D. and Somalwar, S. Stone, R. Thomas, S. Thomassen, P. and Walker, M. Delannoy, A. G. Foerster, M. Heideman, J. and Riley, G. Rose, K. Spanier, S. Thapa, K. Bouhali, O. and Celik, A. Dalchenko, M. De Mattia, M. Delgado, A. and Dildick, S. Eusebi, R. Gilmore, J. Huang, T. Juska, E. and Kamon, T. Mueller, R. Pakhotin, Y. Patel, R. and Perloff, A. Pernie, L. Rathjens, D. Rose, A. Safonov, A. and Tatarinov, A. Ulmer, K. A. Akchurin, N. Cowden, C. and Damgov, J. De Guio, F. Dragoiu, C. Dudero, P. R. and Faulkner, J. Gurpinar, E. Kunori, S. Lamichhane, K. Lee, S. W. Libeiro, T. Peltola, T. Undleeb, S. Volobouev, I. and Wang, Z. Greene, S. Gurrola, A. Janjam, R. Johns, W. and Maguire, C. Melo, A. Ni, H. Sheldon, P. Tuo, S. and Velkovska, J. Xu, Q. Arenton, M. W. Barria, P. Cox, B. and Goodell, J. Hirosky, R. Ledovskoy, A. Li, H. Neu, C. and Sinthuprasith, T. Sun, X. Wang, Y. Wolfe, E. Xia, F. and Clarke, C. Harr, R. Karchin, P. E. Sturdy, J. and Belknap, D. A. Caillol, C. Dasu, S. Dodd, L. Duric, S. and Gomber, B. Grothe, M. Herndon, M. Herve, A. and Klabbers, P. Lanaro, A. Levine, A. Long, K. Loveless, R. and Ojalvo, I. Perry, T. Pierro, G. A. Polese, G. and Ruggles, T. Savin, A. Smith, N. Smith, W. H. Taylor, D. and Woods, N. CMS Collaboration

Subjects
High Energy Physics::Experiment
Abstract

This paper describes the search for a high-mass narrow-width scalar particle decaying into a Z boson and a photon. The analysis is performed using proton-proton collision data recorded with the CMS detector at the LHC at center-of-mass energies of 8 and 13TeV, corresponding to integrated luminosities of 19.7 and 2.7 fb(-1), respectively. The Z bosons are reconstructed from opposite-sign electron or muon pairs. No statistically signi fi cant deviation from the standard model predictions has been found in the 200-2000 GeV mass range. Upper limits at 95% con fi dence level have been derived on the product of the scalar particle production cross section and the branching fraction of the Z decaying into electrons or muons, which range from 280 to 20 fb for resonance masses between 200 and 2000 GeV.

Published
2017

50. Observation of Charge-Dependent Azimuthal Correlations in p-Pb Collisions and Its Implication for the Search for the Chiral Magnetic Effect

Author

Khachatryan, V. Sirunyan, A. M. Tumasyan, A. Adam, W. and Asilar, E. Bergauer, T. Brandstetter, J. Brondolin, E. and Dragicevic, M. Eroe, J. Flechl, M. Friedl, M. and Fruehwirth, R. Ghete, V. M. Hartl, C. Hoermann, N. and Hrubec, J. Jeitler, M. Koenig, A. Kraetschmer, I. Liko, D. Matsushita, T. Mikulec, I. Rabady, D. Rad, N. and Rahbaran, B. Rohringer, H. Schieck, J. Strauss, J. and Waltenberger, W. Wulz, C. -E. Dvornikov, O. Makarenko, V. and Zykunov, V. Mossolov, V. Shumeiko, N. Suarez Gonzalez, J. Alderweireldt, S. De Wolf, E. A. Janssen, X. Lauwers, J. Van de Klundert, M. Van Haevermaet, H. Van Mechelen, P. and Van Remortel, N. Van Spilbeeck, A. Abu Zeid, S. Blekman, F. D'Hondt, J. Daci, N. De Bruyn, I. Deroover, K. and Lowette, S. Moortgat, S. Moreels, L. Olbrechts, A. and Python, Q. Tavernier, S. Van Doninck, W. Van Mulders, P. and Van Parijs, I. Brun, H. Clerbaux, B. De Lentdecker, G. and Delannoy, H. Fasanella, G. Favart, L. Goldouzian, R. and Grebenyuk, A. Karapostoli, G. Lenzi, T. Leonard, A. and Luetic, J. Maerschalk, T. Marinov, A. Randle-Conde, A. and Seva, T. Vander Velde, C. Vanlaer, P. Vannerom, D. and Yonamine, R. Zenoni, F. Zhang, F. Cimmino, A. Cornelis, T. Dobur, D. Fagot, A. Garcia, G. Gul, M. and Khvastunov, I. Poyraz, D. Salva, S. Schoefbeck, R. and Sharma, A. Tytgat, M. Van Driessche, W. Yazgan, E. and Zaganidis, N. Bakhshiansohi, H. Beluffi, C. Bondu, O. and Brochet, S. Bruno, G. Caudron, A. De Visscher, S. and Delaere, C. Delcourt, M. Francois, B. Giammanco, A. and Jafari, A. Jez, P. Komm, M. Krintiras, G. Lemaitre, V. and Magitteri, A. Mertens, A. Musich, M. Nuttens, C. and Piotrzkowski, K. Quertenmont, L. Selvaggi, M. Marono, M. Vidal Wertz, S. Beliy, N. Alda Junior, W. L. Alves, F. L. Alves, G. A. Brito, L. Hensel, C. Moraes, A. Pol, M. E. Rebello Teles, P. Belchior Batista Das Chagas, E. and Carvalho, W. Chinellato, J. Custodio, A. Da Costa, E. M. and Da Silveira, G. G. De Jesus Damiao, D. De Oliveira Martins, C. and Fonseca De Souza, S. Huertas Guativa, L. M. Malbouisson, H. and Matos Figueiredo, D. Mora Herrera, C. Mundim, L. Nogima, H. Prado Da Silva, W. L. Santoro, A. Sznajder, A. and Tonelli Manganote, E. J. Vilela Pereira, A. Ahuja, S. and Bernardes, C. A. Dogra, S. Fernandez Perez Tomei, T. R. and Gregores, E. M. Mercadante, P. G. Moon, C. S. Novaes, S. F. and Padula, Sandra S. Romero Abad, D. Ruiz Vargas, J. C. and Aleksandrov, A. Hadjiiska, R. Iaydjiev, P. Rodozov, M. and Stoykova, S. Sultanov, G. Vutova, M. Dimitrov, A. and Glushkov, I. Litov, L. Pavlov, B. Petkov, P. Fang, W. and Ahmad, M. Bian, J. G. Chen, G. M. Chen, H. S. Chen, M. Chen, Y. Cheng, T. Jiang, C. H. Leggat, D. Liu, Z. Romeo, F. Shaheen, S. M. Spiezia, A. Tao, J. and Wang, C. Wang, Z. Zhang, H. Zhao, J. Ban, Y. Chen, G. Li, Q. Liu, S. Mao, Y. Qian, S. J. Wang, D. and Xu, Z. Avila, C. Cabrera, A. Chaparro Sierra, L. F. and Florez, C. Gomez, J. P. Gonzalez Hernandez, C. F. Ruiz Alvarez, J. D. Sanabria, J. C. Godinovic, N. Lelas, D. and Puljak, I. Ribeiro Cipriano, P. M. Sculac, T. Antunovic, Z. and Kovac, M. Brigljevic, V. Ferencek, D. Kadija, K. and Mesic, B. Micanovic, S. Sudic, L. Susa, T. Attikis, A. and Mavromanolakis, G. Mousa, J. Nicolaou, C. Ptochos, F. and Razis, P. A. Rykaczewski, H. Tsiakkouri, D. Finger, M. and Finger, Jr., M. Carrera Jarrin, E. Abdelalim, A. A. and Mohammed, Y. Salama, E. Kadastik, M. Perrini, L. Raidal, M. Tiko, A. Veelken, C. Eerola, P. Pekkanen, J. and Voutilainen, M. Harkonen, J. Jarvinen, T. Karimaki, V. and Kinnunen, R. Lampen, T. Lassila-Perini, K. Lehti, S. and Linden, T. Luukka, P. Tuominiemi, J. Tuovinen, E. and Wendland, L. Talvitie, J. Tuuva, T. Besancon, M. and Couderc, F. Dejardin, M. Denegri, D. Fabbro, B. Faure, J. L. Favaro, C. Ferri, F. Ganjour, S. Ghosh, S. and Givernaud, A. Gras, P. de Monchenault, G. Hamel Jarry, P. and Kucher, I. Locci, E. Machet, M. Malcles, J. Rander, J. Rosowsky, A. Titov, M. Zghiche, A. 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Feld, L. Heister, A. Kiesel, M. K. Klein, K. and Lipinski, M. Ostapchuk, A. Preuten, M. Raupach, F. and Schael, S. Schomakers, C. Schulz, J. Verlage, T. Weber, H. Zhukov, V. Albert, A. Brodski, M. Dietz-Laursonn, E. and Duchardt, D. Endres, M. Erdmann, M. Erdweg, S. Esch, T. Fischer, R. Gueth, A. Hamer, M. Hebbeker, T. and Heidemann, C. Hoepfner, K. Knutzen, S. Merschmeyer, M. and Meyer, A. Millet, P. Mukherjee, S. Olschewski, M. and Padeken, K. Pook, T. Radziej, M. Reithler, H. Rieger, M. and Scheuch, F. Sonnenschein, L. Teyssier, D. Thueer, S. and Cherepanov, V. Fluegge, G. Kargoll, B. Kress, T. and Kuensken, A. Lingemann, J. Mueller, T. Nehrkorn, A. and Nowack, A. Pistone, C. Pooth, O. Stahl, A. Martin, M. Aldaya Arndt, T. Asawatangtrakuldee, C. Beernaert, K. and Behnke, O. Behrens, U. Bin Anuar, A. A. Borras, K. and Campbell, A. Connor, P. Contreras-Campana, C. Costanza, F. and Pardos, C. Diez Dolinska, G. Eckerlin, G. Eckstein, D. and Eichhorn, T. Eren, E. Gallo, E. Garcia, J. 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M. Stoever, M. Tholen, H. and Troendle, D. Usai, E. Vanelderen, L. Vanhoefer, A. and Vormwald, B. Akbiyik, M. Barth, C. Baur, S. Baus, C. and Berger, J. Butz, E. Caspart, R. Chwalek, T. Colombo, F. and De Boer, W. Dierlamm, A. Fink, S. Freund, B. Friese, R. Giffels, M. Gilbert, A. Goldenzweig, P. Haitz, D. and Hartmann, F. Heindl, S. M. Husemann, U. Katkov, I. and Kudella, S. Pardo, P. Lobelle Mildner, H. Mozer, M. U. and Mueller, Th. Plagge, M. Quast, G. Rabbertz, K. Roecker, S. Roscher, F. Schroeder, M. Shvetsov, I. Sieber, G. and Simonis, H. J. Ulrich, R. Wagner-Kuhr, J. Wayand, S. and Weber, M. Weiler, T. Williamson, S. Woehrmann, C. Wolf, R. Anagnostou, G. Daskalakis, G. Geralis, T. and Giakoumopoulou, V. A. Kyriakis, A. Loukas, D. Topsis-Giotis, I. Kesisoglou, S. Panagiotou, A. Saoulidou, N. Tziaferi, E. Evangelou, I. Flouris, G. Foudas, C. Kokkas, P. and Loukas, N. Manthos, N. Papadopoulos, I. Paradas, E. and Filipovic, N. Bencze, G. Hajdu, C. Horvath, D. Sikler, F. Veszpremi, V. Vesztergombi, G. Zsigmond, A. J. Beni, N. Czellar, S. Karancsi, J. Makovec, A. Molnar, J. and Szillasi, Z. Bartok, M. Raics, P. Trocsanyi, Z. L. and Ujvari, B. Bahinipati, S. Choudhury, S. Mal, P. Mandal, K. Nayak, A. Sahoo, D. K. Sahoo, N. Swain, S. K. and Bansal, S. Beri, S. B. Bhatnagar, V. Chawla, R. and Bhawandeep, U. Kalsi, A. K. Kaur, A. Kaur, M. Kumar, R. and Kumari, P. Mehta, A. Mittal, M. Singh, J. B. Walia, G. Kumar, Ashok Bhardwaj, A. Choudhary, B. C. Garg, R. B. Keshri, S. Malhotra, S. Naimuddin, M. Nishu, N. and Ranjan, K. Sharma, R. Sharma, V. Bhattacharya, R. and Bhattacharya, S. Chatterjee, K. Dey, S. Dutt, S. Dutta, S. Ghosh, S. Majumdar, N. Modak, A. Mondal, K. and Mukhopadhyay, S. Nandan, S. Purohit, A. Roy, A. Roy, D. and Chowdhury, S. Roy Sarkar, S. Sharan, M. Thakur, S. and Behera, P. K. Chudasama, R. Dutta, D. Jha, V. Kumar, V. and Mohanty, A. K. Netrakanti, P. K. Pant, L. M. Shukla, P. and Topkar, A. Aziz, T. Dugad, S. Kole, G. 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Subjects
High Energy Physics::Phenomenology, High Energy Physics::Experiment, Nuclear Experiment
Abstract

Charge-dependent azimuthal particle correlations with respect to the second-order event plane in p-Pb and PbPb collisions at a nucleon-nucleon center-of-mass energy of 5.02 TeV have been studied with the CMS experiment at the LHC. The measurement is performed with a three-particle correlation technique, using two particles with the same or opposite charge within the pseudorapidity range broken vertical bar eta broken vertical bar < 2.4, and a third particle measured in the hadron forward calorimeters (4.4 < broken vertical bar eta broken vertical bar < 5). The observed differences between the same and opposite sign correlations, as functions of multiplicity and. gap between the two charged particles, are of similar magnitude in p-Pb and PbPb collisions at the same multiplicities. These results pose a challenge for the interpretation of charge-dependent azimuthal correlations in heavy ion collisions in terms of the chiral magnetic effect.

Published
2017

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