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2. Impact of Mg content on native point defects in MgxZn1−xO (0 ≤ x ≤ 0.56)

Author

J. Perkins, G. M. Foster, M. Myer, S. Mehra, J. M. Chauveau, A. Hierro, A. Redondo-Cubero, W. Windl, and L. J. Brillson

Subjects
Biotechnology, TP248.13-248.65, Physics, QC1-999
Abstract

We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to measure the densities, energy levels, and spatial distributions of zinc/magnesium cation and oxygen vacancies in isostructural, single-phase, non-polar MgxZn1−xO alloys over a wide (0 ≤ x ≤ 0.56) range. Within this wide range, both defect types exhibit strong Mg content-dependent surface segregation and pronounced bulk density minima corresponding to unit cell volume minima, which can inhibit defect formation due to electrostatic repulsion. Mg in ZnO significantly reduces native defect densities and their non-polar surface segregation, both major factors in carrier transport and doping of these oxide semiconductors.

Published
2015
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3. Use of interface phonon-polaritons for the alloy determination in ZnO/(Zn,Mg)O multiple quantum wells

Author

E. Martínez Castellano, Adrian Hierro, Miguel Montes Bajo, Julen Tamayo-Arriola, Denis Lefebvre, Maxime Hugues, N. Le Biavan, J. M. Chauveau, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), and COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)

Subjects
Composition-dependent phonon frequency, Materials science, Phonon, Reflectance spectroscopy, Multiple quantum, Alloy, Analytical chemistry, General Physics and Astronomy, Cathodoluminescence, 02 engineering and technology, engineering.material, 01 natural sciences, Spectral line, 0103 physical sciences, Calibration, Polariton, Interface phonon polariton, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS]Physics [physics], Surfaces and Interfaces, General Chemistry, Alloy determination, 021001 nanoscience & nanotechnology, Condensed Matter Physics, ZnO, Quantum wells, Surfaces, Coatings and Films, engineering, Longitudinal optical, 0210 nano-technology
Abstract

A method based on infrared reflectance spectroscopy is presented by which the Mg content in ZnO/(Zn,Mg)O multiple quantum wells with very thin barriers can be determined. The method relies on the observation of interface phonon-polaritons which appear as sharp dips in the p-polarized reflectance spectra at oblique incidence near the longitudinal optical (LO)-phonon frequencies of both QW and barrier materials. By fitting the reflectance spectra to a dielectric function model, the LO phonon frequency of the (Zn,Mg)O barrier layers can be determined. The LO phonon frequency depends on the Mg content. Comparing to Mg content calibration via cathodoluminescence, a linear relationship between the reflectance dip frequency and the Mg content is obtained. The presented method serves as a rapid means to determine the Mg content on final structures with very thin (Zn,Mg)O layers-such as device structures-where alternative, destructive methods cannot be used., Applied Surface Science, 567, ISSN:0169-4332, ISSN:1873-5584

Published
2021
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4. THz electroluminescence from non-polar ZnO quantum cascade structures

Author

J. M. Chauveau, Nolwenn Le Biavan, Bo Meng, Jérôme Faist, Martin Franckié, David Stark, Gottfried Strasser, Almudena Torres-Pardo, Hanh T. Hoang, Borislav Hinkov, Miguel Montes Bajo, Adrian Hierro, Julen Tamayo-Arriola, and Denis Lefebvre

Subjects
Range (particle radiation), Materials science, business.industry, Terahertz radiation, Scattering, Electroluminescence, Laser, law.invention, Gallium arsenide, chemistry.chemical_compound, chemistry, law, Cascade, Optoelectronics, business, Lasing threshold
Abstract

Semiconductor material systems based on GaAs or InP are excellent candidates for optoelectronics in the mid-IR to terahertz spectral range. Consequently, they have readily been used for devices like THz quantum cascade lasers (QCLs) in recent years. But besides significant progress in recent years, THz-QCLs are still limited to operate well below room temperature only [1] . One main driving mechanism for such (temperature-) limitations, is based on the relatively low LO-phonon energy in the primary used GaAs material system of E LO,GaAs ~ 36 meV. This yields, especially at high temperatures approaching room-temperature (E kT, room temp. ~ 26 meV), a very strong thermally activated non-radiative scattering process, that is competing with the wanted optical transition. To overcome these material limitations, we follow a disruptive approach: we changed and investigated another material system that has a much larger LO-phonon energy: ZnO (E LO, ZnO ~ 72 meV), which is promising above room temperature lasing operation [2] . In the following, we present our results for realizing, i.e. designing and fabricating [3] MESA structures with light outcoupling gratings into MBE-grown ZnO/ZnMgO THz QCL structures. In addition, we present the first observation of THz intersubband electroluminescence from the ZnO material system [4] .

Published
2021
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5. In Situ Spectroscopic Study of the Optomechanical Properties of Evaporating Field Ion Emitters

Author

E. Di Russo, L. Rigutti, Angela Vella, François Vurpillot, J. M. Chauveau, Simona Moldovan, Georges Beainy, N. Le Biavan, Jonathan Houard, Maxime Hugues, Pradip Dalapati, Ivan Blum, Groupe de physique des matériaux (GPM), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), and Université Nice Sophia Antipolis (1965 - 2019) (UNS)

Subjects
Photoluminescence, Materials science, Field (physics), General Physics and Astronomy, 02 engineering and technology, Atom probe, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, Molecular physics, law.invention, Ion, law, Electric field, 0103 physical sciences, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology, Spectroscopy, Quantum well, ComputingMilieux_MISCELLANEOUS, Common emitter
Abstract

The possibility of measuring in situ operando photoluminescence spectroscopy within a photonic atom probe allows for the real-time study of the mechanical stress state within a field emitter either statically, as a function of the field-induced tensile stress, or dynamically, as a result of the evolution of the shape of the emitter upon its evaporation. Dynamic evolution results from the relaxation of strain induced by lattice mismatch and by the propagation of stress from the apex, while the morphology of the field emitter changes. Optomechanical information can be interpreted through the three-dimensional atomic scale images of the chemical composition of the emitter obtained through standard atom probe analysis. Here, the photoluminescence signal of a $\mathrm{Zn}\mathrm{O}/(\mathrm{Mg},\mathrm{Zn})\mathrm{O}$ quantum well allows for the local measurement of strain within the well and of the electrostatic field applied to the apex of the nanoscale field emitter.

Published
2021
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6. Terahertz Intersubband Electroluminescence from Nonpolar m-Plane ZnO Quantum Cascade Structures

Author

Almudena Torres-Pardo, David Stark, Hanh T. Hoang, Maxime Hugues, Jérôme Faist, Borislav Hinkov, Julen Tamayo-Arriola, J. M. Chauveau, Gottfried Strasser, Adrian Hierro, Nolwenn Le Biavan, Miguel Montes Bajo, Denis Lefebvre, Bo Meng, Martin Franckié, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), and COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)

Subjects
THz, quantum ascade laser, nonpolar ZnO, electroluminescence, molecular beam epitaxy, Materials science, Infrared, Terahertz radiation, Physics::Optics, 02 engineering and technology, Electroluminescence, 01 natural sciences, 7. Clean energy, law.invention, 010309 optics, Condensed Matter::Materials Science, law, 0103 physical sciences, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, [PHYS]Physics [physics], Condensed Matter::Other, business.industry, Plane (geometry), Heterojunction, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, 3. Good health, Electronic, Optical and Magnetic Materials, Cascade, Optoelectronics, 0210 nano-technology, business, Quantum cascade laser, Biotechnology, Molecular beam epitaxy
Abstract

The ZnO-based heterostructures are predicted to be promising candidates for optoelectronic devices in the infrared and terahertz (THz) spectral domains owing to their intrinsic material properties. Specifically, the large ZnO LO-phonon energy reduces the thermally activated LO-phonon scattering, which is predicted to greatly improve the temperature performance of THz quantum cascade lasers. However, to date, no experimental observation of intersubband emission from ZnO optoelectronic devices has been reported. Here, we report the observation of THz intersubband electroluminescence from ZnO/MgxZn1–xO quantum cascade structures grown on a nonpolar m-plane ZnO substrate up to room temperature. The electroluminescence peak shows a line width of ∼20 meV at a center frequency of ∼8.5 THz at 110 K, which is not accessible for GaAs-based quantum cascade structures because of the reststrahlen band absorption from 8 to 9 THz. This result is an important step toward the realization of ZnO-based THz quantum cascade lasers. ISSN:2330-4022

Published
2021
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7. Super-resolution Optical Spectroscopy of Nanoscale Emitters within a Photonic Atom Probe

Author

Nolwenn Le Biavan, Bernard Deconihout, Didier Blavette, Enrico Di Russo, J. M. Chauveau, Pradip Dalapati, Simona Moldovan, François Vurpillot, L. Rigutti, Linda Venturi, Maxime Hugues, Angela Vella, Jonathan Houard, Ivan Blum, Denis Lefebvre, Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU), and Université Nice Sophia Antipolis (... - 2019) (UNS)

Subjects
Materials science, Photoluminescence, Bioengineering, 02 engineering and technology, Atom probe, Ion, law.invention, law, Microscopy, Heterostructures, General Materials Science, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Spectroscopy, business.industry, Mechanical Engineering, Resolution (electron density), General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Laser, Atomic Scale Microscopy, Optical Spectroscopy, Quantum Light Emitters, Semiconductors, Super-resolution, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Photonics, 0210 nano-technology, business
Abstract

International audience; Atom Probe Tomography (APT) is a microscopy technique allowing for the 3D reconstruction of the chemical composition of a nanoscale needle-shaped sample with a precision close to the atomic scale. The photonic atom probe (PAP) is an evolution of APT featuring in situ and operando detection of the photoluminescence signal. The optical signatures of the lightemitting centers can be correlated with the structural and chemical information obtained by the analysis of the evaporated ions. It becomes thus possible to discriminate and interpret the spectral signatures of different light emitters as close as 20 nm, well beyond the resolution limit set by the exciting laser wavelength. This technique opens up new perspectives for the study of the physics of low dimensional systems, defects and optoelectronic devices.

Published
2020
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8. Terahertz intersubband electroluminescence from ZnO quantum cascade structures

Author

H. Hoang, Borislav Hinkov, Gottfried Strasser, Jérôme Faist, David Stark, Bo Meng, Maxime Hugues, N. Le Biavan, and J. M. Chauveau

Subjects
010302 applied physics, Density matrix, Materials science, business.industry, Terahertz radiation, 02 engineering and technology, Substrate (electronics), Electroluminescence, 021001 nanoscience & nanotechnology, 01 natural sciences, Laser linewidth, Cascade, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Quantum, Quantum well
Abstract

Terahertz intersubbband electrolulminescence from ZnO quantum cascade structures, based on four quantum well per period, is presented. The whole cascade structure was grown on the m-plane ZnO substrate. An electroluminescence peak with a linewidth of ~ 20 me V is observed at 8.5 THz, in consistent with the numerical simulation by a density matrix model.

Published
2020
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9. A photonic atom probe coupling 3D atomic scale analysis with in situ photoluminescence spectroscopy

Author

François Vurpillot, Angela Vella, Christian Bacchi, Charly Vaudolon, Pradip Dalapati, Antoine Normand, Georges Beainy, Enrico Di Russo, Jonathan Houard, Bernard Deconihout, Didier Blavette, Gérald Da Costa, Fabien Delaroche, L. Rigutti, J. M. Chauveau, Maxime Hugues, Simona Moldovan, Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Groupe de physique des matériaux (GPM), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), and Université Nice Sophia Antipolis (1965 - 2019) (UNS)

Subjects
Materials science, Photoluminescence, Physics - Instrumentation and Detectors, FOS: Physical sciences, Atom probe, Applied Physics (physics.app-ph), 01 natural sciences, 010305 fluids & plasmas, law.invention, law, 0103 physical sciences, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Focal length, Physics::Atomic Physics, Spectroscopy, Instrumentation, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS]Physics [physics], Spectrometer, Condensed Matter - Mesoscale and Nanoscale Physics, Streak camera, business.industry, Astrophysics::Instrumentation and Methods for Astrophysics, Instrumentation and Detectors (physics.ins-det), Physics - Applied Physics, Laser, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Photonics, business
Abstract

Laser enhanced field evaporation of surface atoms in Laser-assisted Atom Probe Tomography (La-APT) can simultaneously excite phtotoluminescence in semiconductor or insulating specimens. An atom probe equipped with appropriate focalization and collection optics has been coupled with an in-situ micro-Photoluminescence ({\mu}PL) bench that can be operated during APT analysis. The Photonic Atom Probe instrument we have developped operates at frequencies up to 500 kHz and is controlled by 150 fs laser pulses tunable in energy in a large spectral range (spanning from deep UV to near IR). Micro-PL spectroscopy is performed using a 320 mm focal length spectrometer equipped with a CCD camera for time-integrated and with a streak camera for time-resolved acquisitions. An exemple of application of this instrument on a multi-quantum well oxide heterostructure sample illustrates the potential of this new generation of tomographic atom probe., Comment: 22 pages, 4 figures. The following article has been accepted by the Review of Scientific Instruments. After it is published, it will be found at https://publishing.aip.org/resources/librarians/products/journals/

Published
2020
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10. Electronic coupling in ZnO asymmetric quantum wells for intersubband cascade devices

Author

Almudena Torres-Pardo, Julen Tamayo-Arriola, Denis Lefebvre, Bo Meng, Maxime Hugues, N. Le Biavan, J. M. Chauveau, Adrian Hierro, Jérôme Faist, and Miguel Montes Bajo

Subjects
X-ray reflectivity, Materials science, Photoluminescence, Absorption spectroscopy, Terahertz radiation, business.industry, Doping, Optoelectronics, Heterojunction, business, Quantum well, Molecular beam epitaxy
Abstract

Recently Zinc Oxide has received a renewed attention for the realization of intersubband devices such as quantum cascade lasers (QCLs). Indeed this material is predicted to be able to tackle the main limitation of current terahertz (THz) QCLs: the limited operation temperature. We report the observation of electronic coupling within ZnO/(Zn, Mg)O asymmetric quantum wells (QWs), first step towards this goal. Samples were grown by molecular beam epitaxy (MBE) with surfaces down to 0.4 nm. X-ray reflectivity (XRR) was used for thickness measurements checking and for the investigation of the interface quality. Atomic resolution scanning transmission electron microscopy (STEM) images reveals that we are able to grow 2 monolayers (MLs) thin (Zn, Mg)O barriers in a reproducible way while keeping abrupt interfaces. Room temperature (RT) photoluminescence (PL) spectra show that QWs are still coupled when separated by a 1.0 nm thick barrier. On the contrary, a 4.0 nm thick barrier allows no coupling. Doped samples were investigated by absorption experiment. Absorption spectra were successfully fitted by a theoretical model, proving a clear electronic coupling in our heterostructures. This demonstration allows us to seriously envision the realization of ZnO based intersubband devices.

Published
2020
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11. Intersubband absorption at normal incidence by m-plane ZnO/MgZnO quantum wells

Author

Julen Tamayo-Arriola, Denis Lefebvre, JM José Maria Ulloa, P. Vennéguès, N. Le Biavan, Adrian Hierro, J. M. Chauveau, Maxime Hugues, Miguel Montes Bajo, ISOM, Universidad Politecnica de Madrid, Universidad Politécnica de Madrid (UPM), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), and COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)

Subjects
010302 applied physics, [PHYS]Physics [physics], Materials science, Condensed matter physics, Condensed Matter::Other, Metamaterial, 02 engineering and technology, Photodetection, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 01 natural sciences, Electric field, 0103 physical sciences, Perpendicular, 0210 nano-technology, Absorption (electromagnetic radiation), Plasmon, Quantum well, ComputingMilieux_MISCELLANEOUS, Wurtzite crystal structure
Abstract

Intersubband absorption at normal incidence is forbidden by the selection rules and requires oblique incidence operation or texturing of the surface of intersubband-based devices such as focal plane arrays, adding additional processing steps to their fabrication and therefore increasing complexity and costs. Here we demonstrate normal-incidence, polarization sensitive intersubband absorption by wurtzite ZnO/MgZnO quantum wells grown on an m-plane orientation. When grown in this non-polar plane, the ZnO/MgZnO quantum wells spontaneously assemble forming a V-groove profile in the direction perpendicular to the c-axis, i.e. along the a-direction. A stack of quantum wells featuring this morphology acts as a metamaterial that allows for intersubband absorption at normal incidence whenever the electric field of the light is polarized in the direction perpendicular to the c axis. This phenomenon occurs because when the electric field is perpendicular to the c-axis it is no longer contained in the plane of the quantum wells therefore allowing for a small intersubband absorption. On the contrary, if the electric field is parallel to the c-axis, the usual normal-incidence conditions are recovered and no absorption is observed.

Published
2019
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12. Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells

Author

Adrian Hierro, Julien Jaeck, Julen Tamayo-Arriola, Raffaele Colombelli, J-M Chauveau, Adel Bousseksou, Gottfried Strasser, N. Le Biavan, Sophie Derelle, Arnaud Jollivet, Hanh T. Hoang, Maria Tchernycheva, Maxime Hugues, S. Pirotta, François H. Julien, Borislav Hinkov, Miguel Montes Bajo, Lorenzo Rigutti, Laboratoire des Fluides Complexes et leurs Réservoirs (LFCR), TOTAL FINA ELF-Université de Pau et des Pays de l'Adour (UPPA)-Centre National de la Recherche Scientifique (CNRS), DOTA, ONERA, Université Paris Saclay (COmUE) [Palaiseau], ONERA-Université Paris Saclay (COmUE), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Departamento de Ingeniería Electrónica and ISOM (ETSI Telecomunicacion), Universidad Politécnica de Madrid (UPM)-Ciudad Universitaria, Institut fur Photonik und Festkoerperelectronik (IPF), Technishe Universitat Wien, Laboratoire de Physique Nucléaire et de Hautes Énergies (LPNHE), Centre National de la Recherche Scientifique (CNRS)-Université Paris Diderot - Paris 7 (UPD7)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Pierre et Marie Curie - Paris 6 (UPMC), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), This work was funded by the European Union’s Horizon 2020 Research and Innovation FET-Open Program under Grant Agreement No. 665107 (project ZOTERAC)., Institute of Applied Physics [Vienna] (TU Wien), Vienna University of Technology (TU Wien), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Universidad Politécnica de Madrid (UPM), Groupe de physique des matériaux (GPM), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU), Université Nice Sophia Antipolis (1965 - 2019) (UNS), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), and Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Photocurrent, [PHYS]Physics [physics], Materials science, Physics and Astronomy (miscellaneous), business.industry, 02 engineering and technology, Electron, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, Responsivity, Wavelength, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, QW - QUANTUM WELLS, 0210 nano-technology, Absorption (electromagnetic radiation), business, Spectroscopy, QCD - QUANTUM CASCADE DETECTORS, Quantum well, Molecular beam epitaxy
Abstract

International audience; This paper reports on the demonstration of quantum cascade detectors (QCDs) based on ZnO/ ZnMgO quantum wells (QWs) grown by molecular beam epitaxy on an m-plane ZnO substrate. The TM-polarized intersubband absorption is peaked at a 3 lm wavelength. The sample has been processed in the form of square mesas with sizes ranging from 10_10 lm2 up to 100_100 lm2. The I-V characteristics reveal that 86% of the 260 devices are operational and that the surface leakage current is negligible at room temperature, which is not the case at 77 K. The photocurrent spectroscopy of 100_100 lm2 QCDs reveals a photocurrent resonance at a 2.8 lm wavelength, i.e., slightly blue-shifted with respect to the intersubband absorption peak. The photocurrent persists up to room temperature. The calibrated peak responsivity amounts to 0.15mA/W under irradiation at Brewster’s angle of incidence. This value allows us to estimate the transfer efficiency (1.15%) of the photoexcited electrons into the active QW of the next period. Published by AIP Publishing.

Published
2018
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13. Intersubband plasmons induced negative refraction at mid-IR frequency in heterostructured semiconductor metamaterials

Author

Adrian Hierro, Massimo Giudici, Angela Vasanelli, Julen Tamayo-Arriola, J. M. Chauveau, Miguel Montes Bajo, Mario Ferraro, and Patrice Genevet

Subjects
History, Materials science, Condensed Matter::Other, business.industry, Doping, Metamaterial, semiconductors, Electron, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Computer Science Applications, Education, metamaterials, Semiconductor, Negative refraction, zinc oxyde, Optoelectronics, Surface plasmon resonance, business, Plasmon, Quantum well
Abstract

In this contribution, we report on negative refraction effect occurring in layered semiconductors. The origin of this effect is attributed to the presence of intersubband plasmon resonance induced by the electronic confinement of the electrons in thick quantum wells. Relying on the effective medium theory, we analyse both the in plane and the out of plane effective optical properties of highly doped ZnO/ZnMgO semiconductor material. We theoretically show and experimentally demonstrate that thicknesses and doping levels of each layer can be carefully chosen to feature strong intersubband transitions, leading to type 1 and type 2 hyperbolic response. Understanding the optical properties of intersubband materials in the frame of hyperbolic materials would shed new light on which physical mechanisms are controlling the radiative decay of intersubband plasmon excitations. This approach could be further utilized to designing efficient mid-IR sources.

Published
2018
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14. Assessing the Composition of Wide Bandgap Compound Semiconductors by Atom Probe Tomography: A Metrological Problem

Author

Ivan Blum, E. Di Russo, Maria Tchernycheva, F. Moyon, Ludovic Largeau, Lorenzo Mancini, Didier Blavette, L. Rigutti, J.-F. Carlin, Nicolas Grandjean, J. M. Chauveau, E. Giraud, François Vurpillot, Noelle Gogneau, Maxime Hugues, Williams Lefebvre, F. H. Julien, Raphaël Butté, Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institute of Condensed Matter Physics [Lausanne], Ecole Polytechnique Fédérale de Lausanne (EPFL), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU), and Université Nice Sophia Antipolis (... - 2019) (UNS)

Subjects
010302 applied physics, Materials science, Band gap, Nanotechnology, 02 engineering and technology, Atom probe, 021001 nanoscience & nanotechnology, 01 natural sciences, Metrology, law.invention, law, 0103 physical sciences, Compound semiconductor, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology, Instrumentation, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2016
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15. [Withdrawal syndrome in 2 drug addicts after intravenous injection of buprenorphine?]

Author

L, Gourarier, W, Lowenstein, M, Gisselbrecht, J M, Chauveau, C, Haas, and H, Durand

Subjects
Adult, Male, Narcotics, Acute Disease, Injections, Intravenous, Humans, Female, Opioid-Related Disorders, Buprenorphine, Substance Withdrawal Syndrome
Abstract

Adequate dosage of sublingual buprenorphine is now recommended for substitution treatment of severe opioid dependance. We report two cases of acute discomfort, probably linked to withdrawal syndrome, after an IV injection of high doses of buprenorphine in opiate dependant patients. Data on the pharmacokinetics and neurobiochemical aspects of buprenorphine are compared with those of other opiates. A major issue of this work is a guideline for inducing substitution treatment with this "unique" partial agonist/antagonist of endorphinic receptors.

Published
1996

17. [Study and surgery of diseases of the middle meatus under endoscopic control]

Author

J M, Klossek, J P, Fontanel, J M, Chauveau, J, De Larrard, and D, Baudoin

Subjects
Nasal Polyps, Nose Diseases, Paranasal Sinus Diseases, Aspergillosis, Humans, Endoscopy, Maxillary Sinus, Nasal Cavity, Tomography, X-Ray Computed
Abstract

The middle meatus is the site of abnormalities which are to a great extent responsible for naso-sinus pathology. Its exploration has benefited from improvements in optical systems (microscopes and endoscopes) and radiological investigations. We present our experience with exploration and surgery of the middle meatus under endoscopic control. The medical examination (past history, allergy, etc.) combined with radio-endoscopic findings helps to define the appropriate therapy. Functional surgery is sometimes necessary. This is performed under local anesthetic, which in our experience improves the condition for the procedure and decreases the post-operative complications.

Published
1989

18. [Epidermoid carcinoma of the external auditory canal]

Author

J P, Fontanel, J M, Klossek, J M, Chauveau, A, Daban, J, de Larrard, and P, Babin

Subjects
Adult, Male, Radiography, Carcinoma, Squamous Cell, Humans, Female, Middle Aged, Ear Canal, Ear Neoplasms, Aged, Retrospective Studies
Abstract

The squamous cell carcinoma of the external auditory canal is extremely rare. The facial paralysis is usual, but pain seems to be the most common symptom. The mean age at diagnosis is 50 to 60 years, with chronic external otitis preceding. The CT-scan is the most important investigation before treatment: surgery and external radiotherapy. Surgical procedure must be large, with or without facial nerve dissection, following by irradiation of the temporal bone and cervical nodes. The generally poor prognosis is explained by the frequency of advanced disease at the time of diagnosis. This paper reports our 4 experiences, with a bilateral carcinoma case.

Published
1989

19. Deep-level spectroscopy in metal–insulator–semiconductor structures.

Author

A Kurtz, E Muñoz, J M Chauveau, and A Hierro

Subjects
DEEP level transient spectroscopy, SEMICONDUCTOR-insulator-semiconductor structures, SIMULATION methods & models
Abstract

In this study we present a method for measuring bulk traps using deep-level spectroscopy techniques in metal–insulator–semiconductor (MIS) structures. We will focus on deep-level transient spectroscopy (DLTS), although this can be extended to deep-level optical spectroscopy (DLOS) and similar techniques. These methods require the modulation of a depletion region either from a Schottky junction or from a highly asymmetric p–n junction, junctions that may not be realizable in many current material systems. This is the case of wide-bandgap semiconductor families that present a doping asymmetry or have a high residual carrier concentration or surface carrier accumulation, such as InGaN or ZnO. By adding a thin insulating layer and forming an MIS structure this problem can be circumvented and DLTS/DLOS can be performed under certain conditions. A model for the measurement of bulk traps in MIS structures is thus presented, focusing on the similarities with standard DLTS, maintaining when possible links to existing knowledge on DLTS and related techniques. The model will be presented from an equivalent circuit point of view. The effect of the insulating layer on DLTS is evaluated by a combination of simulations and experiments, developing methods for the measurement of these type of devices. As a validation, highly doped ZnO:Ga MIS devices have been successfully characterized and compared with a reference undoped sample using the methods described in this work, obtaining the same intrinsic levels previously reported in the literature but in material doped as high as cm−3. [ABSTRACT FROM AUTHOR]

Published
2017
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20. Electrical mechanisms for carrier compensation in homoepitaxial nonpolar m-ZnO doped with nitrogen.

Author

A Kurtz, A Hierro, M Lopez-Ponce, G Tabares, and J M Chauveau

Subjects
PHOTOLUMINESCENCE, OPTICAL spectroscopy, VALENCE bands, ELECTRONIC structure, NITROGEN, ZINC oxide
Abstract

By combining photoluminescence, capacitance-voltage profiling and deep level optical spectroscopy, the optical and electrical signatures of the deep levels induced by N in MBE-grown homoepitaxial m-ZnO layers are identified and correlated to different physical origins. The films are electrically compensated, with carrier concentrations that decrease from ∼1 · 1016 cm−3 to ∼2 · 1015 cm−3 as a result of increasing N incorporation. Regardless of the presence of N, an intrinsic trap is found in all films at EV + 0.25 eV, most likely related to VZn defects. More interestingly, N induces three new deep levels close to the valence band whose bandgap position is electrically observed to be at EV + 0.48 eV, EV + 0.17 eV and EV + 0.12 eV. The deepest trap at EV + 0.48 eV correlates well with a N-induced level observed in previous studies on both ZnMgO and ZnO films. The EV + 0.17 eV trap behaves as a minority (hole) carrier trap, and can be uniquely correlated with the acceptor level involved in the N-induced DAP emission observed in the photoluminescence spectra. Finally, the shallowest level at EV + 0.12 eV shows an electrical signature completely distinguishable from the EV + 0.17 eV level, and dominates the deep level spectra after N-incorporation with a trap concentration of ∼1.2 · 1015 cm−3. [ABSTRACT FROM AUTHOR]

Published
2016
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