1. Proton radiation damage tolerance of wide dynamic range SOI pixel detectors
- Author
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Tsunomachi, Shun, Kohmura, Takayoshi, Hagino, Kouichi, Kitajima, Masatoshi, Doi, Toshiki, Aoki, Daiki, Ohira, Asuka, Shimizu, Yasuyuki, Fujisawa, Kaito, Yamazaki, Shizusa, Uchida, Yuusuke, Shimizu, Makoto, Itoh, Naoki, Arai, Yasuo, Miyoshi, Toshinobu, Nishimura, Ryutaro, Tsuru, Takeshi Go, and Kurachi, Ikuo
- Subjects
Astrophysics - Instrumentation and Methods for Astrophysics ,Physics - Instrumentation and Detectors - Abstract
We have been developing the SOI pixel detector ``INTPIX'' for space use and general purpose applications such as the residual stress measurement of a rail and high energy physics experiments. INTPIX is a monolithic pixel detector composed of a high-resistivity Si sensor, a SiO2 insulator, and CMOS pixel circuits utilizing Silicon-On-Insulator (SOI) technology. We have considered the possibility of using INTPIX to observe X-ray polarization in space. When the semiconductor detector is used in space, it is subject to radiation damage resulting from high-energy protons. Therefore, it is necessary to investigate whether INTPIX has high radiation tolerance for use in space. The INTPIX8 was irradiated with 6 MeV protons up to a total dose of 2 krad at HIMAC, National Institute of Quantum Science in Japan, and evaluated the degradation of the performance, such as energy resolution and non-uniformity of gain and readout noise between pixels. After 500 rad irradiation, which is the typical lifetime of an X-ray astronomy satellite, the degradation of energy resolution at 14.4 keV is less than 10%, and the non-uniformity of readout noise and gain between pixels is constant within 0.1%., Comment: 7 pages, 8 figures, published in proceedings for SPIE Astronomical Telescopes + Instrumentation in 2022
- Published
- 2022