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Defects in p-type oxide/β-Ga2O3 heterojunction diodes were investigated using p-type Cu2O as a case study. Diodes with polycrystalline and epitaxial Cu2O films were analyzed using deep-level transient spectroscopy. For both diodes, two electron bulk defects were detected, including a minority defect at 0.23 eV below EC within Cu2O and a majority defect at 0.53 eV below EC within β-Ga2O3. Furthermore, a high-density interface state of 4.5 × 1012 cm−2/eV was observed in the polycrystalline Cu2O/β-Ga2O3 diode. The presence of a high density of interface states helped reduce the turn-on voltage owing to the interface recombination current. However, it also enabled electron carriers to tunnel through the interface to β-Ga2O3, followed by variable range hopping through the bulk defect in the β-Ga2O3 layer, ultimately causing undesirable premature breakdown. The results of this study underscore the critical role of optimizing the crystal structure during p-type oxide growth for desired defect characteristics, particularly concerning interface states, in β-Ga2O3 bipolar devices for different applications, offering insights for high-performance power rectifier development. [ABSTRACT FROM AUTHOR]

Heavy alkali-metal treatment of Cu(In,Ga)Se2 (CIGSe) absorbers has been emerging as a key process for achieving over 23% high conversion efficiencies in CIGSe solar cells. Here, we investigate the effect of rubidium fluoride post-deposition treatment (RbF-PDT) on the electronic and carrier recombination properties of narrow bandgap (narrowgap) gap and wide bandgap (widegap) CIGSe solar cells using thermal admittance spectroscopy (TAS), transient photocapacitance spectroscopy (TPC), as well as time-resolved photoluminescence (TRPL). We find that the activation energy of the main capacitance step in TAS spectra of narrowgap and widegap CIGSe solar cells reduces after RbF-PDT. On the other hand, capacitance–voltage (C–V) and temperature-dependent current–voltage (IVT) measurements demonstrate that the built-in potential, as well as the activation energy Ea, increases upon RbF-PDT both for narrowgap and widegap samples, pointing to reduced interface recombination. TPC revealed an appreciable reduction of the optical response of bulk defects in the narrowgap and widegap CIGSe, suggesting improvement of bulk properties after RbF treatment. TRPL confirmed that RbF-PDT significantly reduces carrier recombination in the bulk of narrowgap and widegap CIGSe absorbers and at the surface, leading to extended carrier lifetimes. Analysis of open-circuit voltage (V O C) losses due to nonradiative recombination in the bulk of the CIGSe showed a strong correlation between enhanced carrier lifetime and improved V O C for narrow gap CIGSe cells. In contrast, although we observed a substantial decrease of V O C losses in widegap CIGSe bulk, the analysis indicated that the key to photovoltaic performance enhancement is improved interface quality. [ABSTRACT FROM AUTHOR]

The photodecomposition of PbI2 in the perovskite halide structure has been identified as a primary reason for the rapid degradation of metal halide perovskite solar cells (PSCs) under continuous illumination. In particular, excess PbI2 on the surface of perovskite films reduces the stability of PSCs via several mechanisms that are still unelucidated. Herein, the influence of excess PbI2 on PSCs is investigated by varying the Au deposition rate, which results in different temperatures during the fabrication of PSCs, and then they are compared with stoichiometric PSCs. It is demonstrated that the anion exchange of Br− in perovskite and I− in excess PbI2 occurs at the grain boundary and interface of the perovskite layers induced by the high heating temperature, leading to a photoluminescence peak redshift and lower power conversion efficiency. Light illumination accelerates the exchange of Br− and I− between the perovskite layer and excess PbI2 induced by carrier accumulation at the interface and grain boundary, leading to the poor stability of the PSCs. [ABSTRACT FROM AUTHOR]

In this work, p-type cuprous oxide (Cu2O) films grown on beta gallium oxide (β-Ga2O3) substrates by magnetron sputtering were reported. The resulting vertical Cu2O/β-Ga2O3 heterojunction p–n diodes demonstrated superior performance compared to devices fabricated with polycrystalline Cu2O thin films. Meanwhile, analysis of the discrepancies between the built-in potential and turn-on voltage revealed diverse carrier transport mechanisms in the fabricated devices. Numerical fitting of the forward J–V characteristics further discerned that distinct carrier transport mechanisms dominated under various bias voltages or temperature conditions. At 300 K, trap-assisted tunneling dominates the regime because of the presence of defects in β-Ga2O3 or Cu2O. While the bias voltage is low, the polycrystalline nature of the films formed at room temperature leads to the prevalence of grain boundaries as the primary source of interface-type defects at the Cu2O/β-Ga2O3 interface. Consequently, the dominant mechanism governing carrier transport is interface recombination. As the temperature increases, however, thermionic emission becomes more important. This study presents an opportunity for further investigation into the epitaxial growth of Cu2O and provides insights into the carrier transport mechanism of β-Ga2O3-based heterojunctions. [ABSTRACT FROM AUTHOR]

A selective fabrication method for monoclinic-scheelite (m-s) BiVO4 and tetragonal-zircon (t-z) BiVO4 thin films using radio fRequency (RF) sputtering from a single target was developed. The kinetic energy of the sputtered atoms was controlled by varying the sputtering power to obtain BiVO4 films with m-s and t-z crystalline phases. Although the band gap of the t-z BiVO4 phase (3.0 eV) was larger than that of m-s BiVO4 (2.5 eV), the deposited t-z BiVO4 films showed a comparable photocurrent density (1.5 mA cm−2) at 1.23 V versus the reversible hydrogen electrode (400 W Xe lamp). This was mainly because of the reduced sputtering damage in the t-z BiVO4 crystal, which originated from the low sputtering power as well as the deep valence-band position in t-z BiVO4 that enabled the efficient utilization of the photocarriers. This work provides insights into crystalline phase control using the particle kinetic energy in sputtering. [ABSTRACT FROM AUTHOR]

Chalcopyrite CuInSe2 (CISe)-based thin-film photovoltaic solar cells have been attracting attention since the 1970s. The technologies of CISe-based thin-film growth and device fabrication processes have already been put into practical applications and today commercial products are available. Nevertheless, there are numerous poorly understood areas in the physical and chemical aspects of the underlying materials science and interfacial and bulk defect physics in CISe-based thin-films and devices for further developments. In this paper, current issues in physical and chemical studies of CISe-based materials and devices are reviewed. Correlations between Cu-deficient phases and the effects of alkali-metals, applications to lightweight and flexible solar minimodules, single-crystalline epitaxial Cu(In,Ga)Se2 films and devices, differences between Cu(In,Ga)Se2 and Ag(In,Ga)Se2 materials, wide-gap CuGaSe2 films and devices, all-dry processed CISe-based solar cells with high photovoltaic efficiencies, and also fundamental studies on open circuit voltage loss analysis and the energy band structure at the interface are among the main areas of discussion in this review. [ABSTRACT FROM AUTHOR]

The systematic variations in the structural, optical, and electrical properties of polycrystalline Cu(In,Ga)Se2 (CIGS) thin films with Na doping level were investigated. Precise control of the Na concentration in CIGS films was demonstrated using alkali-silicate glass thin layers of various thicknesses deposited on substrates prior to CIGS growth. The CIGS grain size was observed to decrease with increasing Na concentration, although the surface morphology became smoother and exhibited a stronger (112) texture, which has been demonstrated consequence of larger grain size. The Ga composition gradient in the CIGS films was found to become large due to the presence of Na during growth, which in turn led to a decrease in the nominal band gap energy. Variations in the photoluminescence spectra and electrical properties suggested that the formation of an acceptor energy state, which may originate from OSe point defects, was enhanced in the presence of Na. This result suggests that not only Na, but also the presence of O in combination with Na contributes to the compensation of point defects and enhances p-type conductivity in CIGS films. [ABSTRACT FROM AUTHOR]