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The trap centers have a significant impact on the electronic properties of lead tungstate (PbWO4), suggesting their crucial role in optoelectronic applications. In the present study, we investigated and revealed the presence of shallow trap centers in PbWO4 crystals through the utilization of the thermally stimulated current (TSC) method. TSC experiments were performed in the 10–280 K range by applying a constant heating rate. The TSC spectrum showed the presence of a total of four peaks, two of which were overlapped. As a result of analyzing the TSC spectrum using the curve fit method, the activation energies of revealed centers were found as 0.03, 0.11, 0.16, and 0.35 eV. The trapping centers were associated with hole centers according to the comparison of TSC peak intensities recorded by illuminating the opposite polarity contacts. Our findings not only contribute to the fundamental understanding of the charge transport mechanisms in PbWO4 crystals but also hold great promise for enhancing their optoelectronic device performance. The identification and characterization of these shallow trap centers provide valuable insights for optimizing the design and fabrication of future optoelectronic devices based on PbWO4. [ABSTRACT FROM AUTHOR]

This study presents a thorough examination of the structural and thermal characteristics of Bi12SiO20 crystal. X-ray diffraction (XRD) analysis was employed to investigate the crystallographic structure, while scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were utilized to ascertain morphological features and elemental composition, respectively. The XRD spectrum exhibited numerous peaks corresponding to the cubic crystalline structure. Thermal behavior was investigated through thermal gravimetric analysis (TGA), differential thermal analysis (DTA) and differential scanning calorimetry (DSC). Within the crystal, negligible weight loss was observed up to 750 °C, followed by weight loss processes occurring in the temperature ranges of 750–919 °C and above 919 °C. The 2% weight loss in the range of 750–919 °C was associated with the decomposition process, and the activation energy of this process was found to be 199 kJ/mol considering Coats-Redfern expression. A significant weight loss was observed in the region above 919 oC and was associated with the decomposition of the Bi12SiO20 compound and/or the melting processes of the components of the Bi12SiO20 compound. Three endothermic peaks were observed in the DTA plot. Additionally, DSC measurements conducted under varied heating rates indicated endothermic crystallization process around 348 °C, with an activation energy of 522 kJ/mol determined through the Kissenger equation. These findings present valuable details regarding the crystal's structural configuration, morphological attributes, and decomposition/phase transitions, thereby illuminating its potential applications across various fields. [ABSTRACT FROM AUTHOR]

In this study, linear and nonlinear optical characteristics of NaBi(Mo0.5W0.5O4)2 crystal, a new material that may have potential for optoelectronic applications, were investigated. NaBi(Mo0.5W0.5O4)2 single crystals were grown via the Czochralski method. Two sharp and well-defined peaks were observed in the x-ray diffraction pattern. These peaks were associated with tetragonal crystal structure. The data obtained from ellipsometer measurements was matched with a suitable optical model. This allowed for the presentation of the spectral dependence of various optical parameters like refractive index, dielectric constant, optical conductivity, extinction, and absorption coefficients in the range of 1.2–5.0 eV. As a result of studying the spectral dependence of the absorption coefficient under Tauc relationship, bandgap energy of the compound was found to be 3.20 eV. Using the spectral dependence of the dielectric function, the existence of two critical points with energy values of 3.72 and 4.44 eV was revealed. The change of the refractive index in the region under the bandgap was studied using the single oscillator model. Single oscillator and dispersion energies were determined from the analysis results. Nonlinear optical parameters of NaBi(Mo0.5W0.5O4)2 crystal were also determined. With this study, the optical properties of the NaBi(Mo0.5W0.5O4)2 are presented in more detail and valuable information is presented for the potential use of the material in optoelectronic devices. [ABSTRACT FROM AUTHOR]

The compound NaBi(MoO4)2 has garnered significant interest in optoelectronic fields. This study employs spectroscopic ellipsometry to thoroughly examine the linear and nonlinear optical characteristics of NaBi(MoO4)2 crystals, offering detailed insights into their optical behavior. Our investigation presents a precise method for discerning the crystal's spectral features, revealing the spectral variations of key optical parameters such as refractive index, extinction coefficient, dielectric function, and absorption coefficient within the 1.2-5.0 eV range. Through analysis, we determined optical attributes including bandgap energy, critical point energy, and single oscillator parameters. Additionally, we explored the nonlinear optical properties of NaBi(MoO4)2, unveiling potential applications such as optoelectronic devices, frequency conversion, and optical sensors. This study enhances comprehension of optical properties of NaBi(MoO4)2, underscoring its significance in future optical and electronic advancements. [ABSTRACT FROM AUTHOR]