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The performance of metal atoms chemically bonded to oxide supports cannot be explained solely by the intrinsic properties of the metals such as the d-band center. Herein, we present an in-depth study of the correlation between metal–oxide interactions and the properties of the supported metal using CO adsorption on Me1 (Fe1, Co1, and Ni1) loaded over CeO2 (111) doped with divalent (Ca, Sr, and Ba), trivalent (Al, Ga, Sc, Y, and La), and quadrivalent (Hf and Zr) heterocations. CO adsorption over Me1 is strongly dependent on the binding energies of Me1. Two factors led to this trend. First, the extent of the Me1–surface oxygen (Me1–O) bond relaxation during CO adsorption played a key role. Second, the d-band center shifted drastically because of charge transfer to the oxides. The shift is related to the oxophilicity of metals. Adsorption energies of Me1 over oxides include the contributions of the factors described above. Therefore, we can predict the activities of Me1 using the strength of anchoring by oxide supports. Results show that smaller ionic radii of the doped heterocations were associated with more tightly bound Me1. This finding sheds light on the possibility of heterocation-doping manipulating the reactivity of the Me1 catalyst based on theoretical predictions. [ABSTRACT FROM AUTHOR]

Understanding heteroatom doping effects on the interaction between H2O and cerium oxide (ceria, CeO2) surfaces is crucially important for elucidating heterogeneous catalytic reactions of CeO2-based oxides. Surfaces of CeO2 (111) doped with quadrivalent (Ti, Zr), trivalent (Al, Ga, Sc, Y, La), or divalent (Ca, Sr, Ba) cations are investigated using density functional theory (DFT) calculations modified for onsite Coulomb interactions (DFT + U). Trivalent (except for Al) and divalent cation doping induces the formation of intrinsic oxygen vacancy (Ovac), which is backfilled easily by H2O. Partially OH-terminated surfaces are formed. Furthermore, dissociative adsorption of H2O is simulated on the OH terminated surfaces (for trivalent or divalent cation doped models) and pure surfaces (for Al and quadrivalent cation doped surfaces). The ionic radius is crucially important. In fact, H2O dissociates spontaneously on the small cations. Although a slight change is induced by doping as for the H2O adsorption energy at Ce sites, the H2O dissociative adsorption at Ce sites is well-assisted by dopants with a smaller ionic radius. In terms of the amount of promoted Ce sites, the arrangement of dopant sites is also fundamentally important. [ABSTRACT FROM AUTHOR]

Efficient ammonia synthesis at low temperatures is anticipated for establishing a hydrogen carrier system. We reported earlier that application of an electric field on the Cs/Ru/SrZrO3 catalyst enhanced catalytic ammonia synthesis activity. It is now clear that N2 dissociation is activated by hopping protons in the electric field. Efficient ammonia synthesis proceeds by an "associative mechanism" in which N2 dissociates via an N2H intermediate, even at low temperatures. The governing factor of ammonia synthesis activity in an electric field for active metals differed from that in the conventional mechanism. Also, N2H formation energy played an important role. The effects of dopants (Al, Y, Ba, and Ca) on this mechanism were investigated using activity tests and density functional theory calculations to gain insights into the support role in the electric field. Ba and Ca addition showed positive effects on N2H formation energy, leading to high ammonia synthesis activity. The coexistence of proton-donating and electron-donating abilities is necessary for efficient N2H formation at the Ru–support interface. [ABSTRACT FROM AUTHOR]