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The use of low-dimensional objects in the field of cavity optomechanics is limited by their low scattering cross section compared to the size of the optical cavity mode. Fiber-based Fabry-P\'{e}rot microcavities can feature tiny mode cross sections and still maintain a high finesse, boosting the light-matter interaction and thus enabling the sensitive detection of the displacement of minute objects. Here we present such an ultrasensitive microcavity setup with the highest finesse reported so far in loaded fiber cavities, $\mathcal{F} = 195\,000$. We are able to position-tune the static optomechanical coupling to a silicon nitride membrane stripe, reaching frequency pull parameters of up to $\mathrm{\lvert G/2\pi\rvert=1}\,\mathrm{GHz\, nm^{-1}}$. We also demonstrate radiation pressure backaction in the regime of an ultrahigh finesse up to $\mathcal{F}=165\,000$.

We report a numerical and experimental investigation of fabrication tolerances and outcoupling in optically pumped III-nitride nanolasers operating near lambda = 460 nm, in which feedback is provided by a one-dimensional photonic crystal nanobeam cavity and gain is supplied by a single InGaN/GaN quantum well. Using this platform, we [1] and others [2] previously demonstrated single-mu W lasing thresholds due to the high beta Q-product inherent to the nanobeam geometry (beta is spontaneous emission coupling fraction into desired mode). In this work, we improved the fraction of emission emitted into our microscope's light cone by combining a redesigned photonic crystal cavity (c.f. [3]) with a cross-grating coupler with period approximately twice the photonic crystal lattice constant [4]. The samples were fabricated in epitaxial III-nitride layers grown on (111) silicon substrates using metal organic vapor phase epitaxy. The photonic crystal and output couplers were patterned using a single electron beam lithography exposure and subsequently transferred to the underlying III-nitride layers using dry etching. The nanobeams were then suspended via vapor phase etching of silicon in XeF2 (Figure 1) [5]. Scanning electron microscopy cross-sections revealed high-aspect ratio (>5), sub-70 nanometer diameter holes with near-vertical sidewalls. Fabrication-induced geometry errors were characterized by processing scanning electron micrographs with custom critical dimension software (Figure 2). Using UV micro-photoluminescence spectroscopy at room temperature, we measured the nanobeams' emission intensity, far-field profile, and quality factor. By comparing more than ten nominally identical nanobeams for each geometry with finite-difference time-domain simulations taking into account the geometrical deviations measured during fabrication [8], we characterized the role of fabrication-induced imperfections. Finally, we explored the trade-off between the quality factor and collected signal via lithographic variations of the output coupler grating amplitude. Our results demonstrate the robustness of III-nitrides for short-wavelength photonic crystal applications, such as photonic integrated circuits, optoelectronics, and cavity quantum electrodynamics.

We optimized the far-field emission pattern of one-dimensional photonic crystal nanobeams by modulating the nanobeam width, forming a sidewall Bragg cross-grating far-field coupler. By setting the period of the cross-grating to twice the photonic crystal period, we showed using three-dimensional finite-difference time-domain simulations that the intensity extracted to the far-field could be improved by more than three orders of magnitude compared to the unmodified ideal cavity geometry. We then experimentally studied the evolution of the quality factor and far-field intensity as a function of cross-grating coupler amplitude. High quality factor (>4000) blue (lambda = 455 nm) nanobeam photonic crystals were fabricated out of GaN thin films on silicon incorporating a single InGaN quantum well gain medium. Micro-photoluminescence spectroscopy of sets of twelve identical nanobeams revealed a nine-fold average increase in integrated far-field emission intensity and no change in average quality factor for the optimized structure compared to the unmodulated reference. These results are useful for research environments and future nanophotonic light-emitting applications where vertical in-and out-coupling of light to nanocavities is required. Published by AIP Publishing.

The mechanisms contributing to experimental quality factors of short wavelength ($\ensuremath{\lambda}=440--480$ nm) III-nitride on silicon one-dimensional photonic crystal cavities were quantified. Fluctuations in fundamental and first-order cavity mode wavelength and quality factor were compared over sets of nominally identical cavities. Unlike at $\ensuremath{\lambda}=1.5\phantom{\rule{0.28em}{0ex}}\ensuremath{\mu}\mathrm{m}$, experimental quality factors were not limited by fabrication disorder modeled as smooth, normally distributed hole size and position variations; after ruling out absorption losses, additional scattering losses were found to predominate at short wavelengths. Experimental quality factors were sensitive to conformal deposition of few nanometer thin films on the photonic crystal surface, suggesting that the additional scattering losses were linked to the surface.