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1. Epitaxial growth of AlN on c-plane sapphire by High Temperature Hydride Vapor Phase Epitaxy: Influence of the gas phase N/Al ratio and low temperature protective layer

Author

A. Claudel, Sabine Lay, Raphaël Boichot, Stéphane Coindeau, Michel Pons, Alexandre Crisci, Elisabeth Blanquet, Frédéric Mercier, N. Coudurier, Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Advanced CERamics Deposition (ACERDE), and Institut Polytechnique de Grenoble - Grenoble Institute of Technology-ACERDE

Subjects
Materials science, Hydrogen, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Epitaxy, 01 natural sciences, Crystal, Stress (mechanics), Etching (microfabrication), 0103 physical sciences, Materials Chemistry, 010302 applied physics, business.industry, Hydride, [CHIM.MATE]Chemical Sciences/Material chemistry, Surfaces and Interfaces, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, chemistry, Sapphire, Optoelectronics, 0210 nano-technology, business, Layer (electronics)
Abstract

International audience; AlN is epitaxially grown on c-plane sapphire by High Temperature Hydride Vapor Phase Epitaxy (HT-HVPE) at constant growth rate and thickness, while varying the N/Al ratio in the gas phase at 1500 °C. The influence of an additional low temperature (1200 °C) protective layer on AlN crystal quality is also assessed. The experiments and thermodynamic calculations show that the sapphire substrate is unstable at high temperature under hydrogen and ammonia while it is stable at low temperature or under a few hundred nanometers of AlN protective layer even at high temperature. In terms of AlN crystal quality, the optimal process developed here consists in depositing a 170 nm low temperature protective AlN layer with N/Al = 3 followed by a high temperature thick AlN layer grown with N/Al = 1.5. In this case, the interface between AlN and sapphire remains continuous (no etching) and the stress in the grown layer at room temperature is minimized by a balance of the growing tensile stress with the cooling compressive stress.

Published
2013
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2. Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process

Author

D. Pique, Alexandre Crisci, Catherine Moisson, Raphaël Boichot, Didier Chaussende, H. Mank, Michel Pons, Béatrice Doisneau, Elisabeth Blanquet, G. Berthomé, A. Claudel, Advanced CERamics Deposition (ACERDE), Institut Polytechnique de Grenoble - Grenoble Institute of Technology-ACERDE, Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), NOVASIC, and NOVASiC

Subjects
010302 applied physics, Materials science, Scanning electron microscope, Analytical chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, Substrate (electronics), Chemical vapor deposition, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 7. Clean energy, 01 natural sciences, Inorganic Chemistry, symbols.namesake, Etching (microfabrication), Transmission electron microscopy, 0103 physical sciences, Materials Chemistry, symbols, Graphite, 0210 nano-technology, Raman spectroscopy
Abstract

International audience; Thick MN layers were grown by high temperature chemical vapor deposition (HTCVD) on 8 degrees off-axis (0 0 0 1) 4H-SiC, on-axis (0 0 0 1) 6H-SiC and on-axis (0 0 0 1) AlN templates between 900 degrees C and 1600 degrees C. The experimental set-up consists of a vertical cold-wall reactor working at low pressure in which the reactions take place on a graphite susceptor heated by induction. The reactants used are ammonia (NH(3)) and aluminum chlorides (AlCl(x)) species in situ formed via Cl(2) reaction with high purity aluminum wire. As-grown AlN layers have been characterized by Scanning Electron Microscopy (SEM), X-ray diffraction (XRD), Transmission Electron Microscopy (TEM), Optical Profilometry, Atomic Force Microscopy (AFM) and Raman spectroscopy. In this study, the influence of the deposition temperature and the N/Al ratio in the gas phase is studied in order to stabilize epitaxial growth. The epitaxy on AlN template is favored using a low N/Al ratio in the gas phase and a high temperature above 1400 degrees C. The crystalline quality of epitaxial AlN layers is found to increase with increasing deposition temperature from 1400 to 1500 degrees C. Growth rates up to 14 mu m h(-1) have been reached for epitaxial AlN layers. An important etching phenomenon is also observed at high temperature: apparition of pin holes certainly around threading dislocations at 1400-1500 degrees C and substrate etching at 1600 degrees C. (C) 2011 Elsevier B.V. All rights reserved.

Published
2011
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3. High-speed Growth and Characterization of Polycrystalline AlN Layers by High Temperature Chemical Vapor Deposition (HTCVD)

Author

Rachel Martin, A. Claudel, Elisabeth Blanquet, D. Pique, Michel Pons, Didier Chaussende, Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Advanced CERamics Deposition (ACERDE), and Institut Polytechnique de Grenoble - Grenoble Institute of Technology-ACERDE

Subjects
Materials science, 020209 energy, chemistry.chemical_element, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, Chemical vapor deposition, 021001 nanoscience & nanotechnology, Grain size, [SPI.MAT]Engineering Sciences [physics]/Materials, law.invention, Ammonia, chemistry.chemical_compound, chemistry, Chemical engineering, law, Aluminium, 0202 electrical engineering, electronic engineering, information engineering, Graphite, Growth rate, Crystallite, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS, Susceptor
Abstract

In this paper, AlN synthesis is achieved by High Temperature CVD which consists of a graphite susceptor heated by induction in a home-built vertical cold-wall reactor working at low pressure. The reactants used are ammonia NH3 and aluminium chlorides AlClx species formed in situ via Cl2 reaction with high purity Al wire. AlN films were deposited on a 55 mm diameter graphite susceptor between 1200{degree sign}C and 1600{degree sign}C. The influence of deposition temperature on growth rate, surface morphology, grain size and crystalline state is presented. Growth rates of up to 230 µm.h-1 were reached. AlN layers were characterized by SEM, X-ray Diffraction, Raman spectroscopy and Optical Profilometry.

Published
2009
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4. Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy

Author

Michel Pons, Isabelle Gelard, Stéphane Coindeau, V. Fellmann, M. Balaji, Brigitte Attal-Trétout, A. Claudel, Krishnan Baskar, Raphaël Boichot, Elisabeth Blanquet, N. Coudurier, Alexandre Crisci, D. Sauvage, S. Luca, Aurélie Pierret, Guillaume Beutier, Advanced CERamics Deposition (ACERDE), Institut Polytechnique de Grenoble - Grenoble Institute of Technology-ACERDE, Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG), ONERA - The French Aerospace Lab [Châtillon], and ONERA-Université Paris Saclay (COmUE)

Subjects
010302 applied physics, Materials science, Hydride, Scanning electron microscope, Metals and Alloys, Analytical chemistry, 02 engineering and technology, Surfaces and Interfaces, Chemical vapor deposition, [CHIM.MATE]Chemical Sciences/Material chemistry, Nitride, 021001 nanoscience & nanotechnology, Epitaxy, 7. Clean energy, 01 natural sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, symbols.namesake, Transmission electron microscopy, 0103 physical sciences, Materials Chemistry, Sapphire, symbols, 0210 nano-technology, Raman spectroscopy
Abstract

International audience; Thin (0001) epitaxial aluminum nitride (AlN) layers were grown on c-plane sapphire using high temperature hydride vapor phase epitaxy. The experimental set-up consists of a vertical cold-wall quartz reactor working at low pressure in which the reactions take place on a susceptor heated by induction. The reactants used are ammonia and aluminum chlorides in situ formed via hydrogen chloride reaction with high purity aluminum pellets. As-grown AlN layers have been characterized by scanning electron microscopy, atomic force microscopy, X-ray diffraction, transmission electron microscopy, photoluminescence and Raman spectroscopies. The influence of the V/III ratio in the gas phase, from 1.5 to 15, on growth rate, surface morphology, roughness and crystalline quality is investigated in order to increase the quality of thin epitaxial AlN layers grown at high temperature. Typical growth rates of around 0.45 mu m/h were obtained for such thin epitaxial AlN layers. The growth rate was unaffected by the V/III ratio. An optimum for roughness, crystalline quality and optical properties seems to exist at V/III = 7.5. As a matter of fact, for a V/III ratio of 7.5, best root mean square roughness and crystalline quality-measured on 0002 symmetric reflection-as low as 6.9 nm and 898 arcsec were obtained, respectively.

Published
2014
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5. Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy

Author

Elisabeth Blanquet, D. Pique, A. Claudel, Stéphane Coindeau, Michel Pons, V. Fellmann, Alexandre Crisci, Raphaël Boichot, N. Coudurier, Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Advanced CERamics Deposition (ACERDE), and Institut Polytechnique de Grenoble - Grenoble Institute of Technology-ACERDE

Subjects
010302 applied physics, Materials science, Scanning electron microscope, Inorganic chemistry, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Chemical vapor deposition, [CHIM.MATE]Chemical Sciences/Material chemistry, Nitride, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 7. Clean energy, 01 natural sciences, symbols.namesake, chemistry, Aluminium, 0103 physical sciences, symbols, Sapphire, Graphite, 0210 nano-technology, Raman spectroscopy
Abstract

A High Temperature Hydride Vapor Phase Epitaxy reactor (HT-HVPE) was used to grow 5 µm-thick (0001) epitaxial AlN layers on sapphire. The experimental set-up consists of a vertical cold-wall quartz reactor working at low pressure in which the reactions take place on a graphite susceptor heated by induction. The reactants used are ammonia (NH3) and aluminum chlorides (AlClx) in situ formed via chlorine (Cl2) reaction with high purity aluminum pellets. As-grown AlN layers have been characterized by Scanning Electron Microscopy (SEM), X-ray diffraction rocking curves (XRC) and Raman spectroscopy. First, the influence of the V/III ratio in the gas phase on surface morphology, crystalline quality and strain into the material is investigated in order to improve the quality of epitaxial AlN layers grown at high temperature. Parameters were adjusted to keep constant growth rate of about 5 µm/h. Second, a protective layer (growth of a 200 nm-thick AlN layer at 1200 °C) was deposited before the main growth of a 5µm layer of AlN at 1500°C. A 430 arcsec FWHM value for the 0002 reflection of the AlN layer has been obtained for such experimental conditions. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Published
2013
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6. CFD modeling of the high-temperature HVPE growth of aluminum nitride layers on c-plane sapphire: from theoretical chemistry to process evaluation

Author

Anne Milet, Frédéric Mercier, A. Claudel, Michel Pons, N. Coudurier, Elisabeth Blanquet, N. Baccar, Raphaël Boichot, Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Advanced CERamics Deposition (ACERDE), Institut Polytechnique de Grenoble - Grenoble Institute of Technology-ACERDE, Département de Chimie Moléculaire - Chimie Théorique (DCM - CT), Département de Chimie Moléculaire (DCM), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Supersaturation, Materials science, chemistry.chemical_element, 02 engineering and technology, [CHIM.MATE]Chemical Sciences/Material chemistry, Nitride, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, Crystal, Crystallography, chemistry, Chemical physics, Aluminium, 0103 physical sciences, Sapphire, Process window, Growth rate, Physical and Theoretical Chemistry, 0210 nano-technology
Abstract

International audience; This study presents numerical modeling based on a relatively limited number of gas-phase and surface reactions to simulate the growth rate of aluminum nitride layers on AlN templates and c-plane sapphire in a broad range of deposition parameters. Modeling results have been used to design particular experiments in order to understand the influence of the process parameters on the crystal quality of AlN layers grown in a high-temperature hydride vapor-phase epitaxy process fed with NH3, AlCl3, and H-2. Modeling results allow to access to very interesting local quantities such as the surface site ratio and local supersaturation. The developed universal model starting from local parameters might be easily transferred to other reactor geometry and process conditions. Among the investigated parameters (growth rate, temperature, local supersaturation, gas-phase N/Al ratio, and local surface site N/Al ratio), only the growth rate/supersaturation or growth rate/temperature relationships exhibit a clear process window to use in order to succeed in growing epitaxial AlN layers on c-plane sapphire or AlN templates. Gas-phase N/Al ratio and local surface site N/Al ratio seem to play only a secondary role in AlN epitaxial growth

Published
2013
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7. High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

Author

A. Claudel, Sabine Lay, Michel Pons, Raphaël Boichot, Elisabeth Blanquet, D. Pique, Frédéric Mercier, N. Coudurier, Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Advanced CERamics Deposition (ACERDE), Institut Polytechnique de Grenoble - Grenoble Institute of Technology-ACERDE, Centre National d'Études Spatiales [Toulouse] (CNES), Champion, Yannick, SILTRONIX (SILTRONIX), and Siltronix

Subjects
Materials science, 02 engineering and technology, Chemical vapor deposition, Nitride, Epitaxy, 01 natural sciences, chemistry.chemical_compound, Impurity, 0103 physical sciences, Materials Chemistry, Silicon carbide, Graphite, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [CHIM.MATE] Chemical Sciences/Material chemistry, business.industry, Surfaces and Interfaces, General Chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, chemistry, Sapphire, Optoelectronics, Crystallite, 0210 nano-technology, business
Abstract

International audience; The application of AlN films in optoelectronics, sensors and high temperature coatings is strongly dependent on the nano-micro-structure of the film, impurity level and defect density. AlN epitaxial thin (0.5-10 mu m) and thick polycrystalline (>10 mu m) films were grown on different foreign substrates (sapphire, silicon carbide, graphite) and single AlN crystals by Chemical Vapor Deposition (CVD), also called Hydride Vapor Phase Epitaxy (HVPE), at high temperature (1200-1750 degrees C). In the first part of this paper, polycrystalline growth of thick films (>10 mu m) prepared at high growth rate (>100 mu m.h(-1)) was performed on graphite substrates to study the preferential orientation of the films. AlN/W multilayers were deposited on silicon carbide composites to increase their performance at high temperature in aggressive conditions. Such multilayer materials can be used for the cladding of nuclear fuel. The second part of this paper concerns the characterization of epitaxial films, including their crystalline state, surface morphology, and inherent and thermally induced stress which inevitably leads to high defect densities and even cracking. The full-width at half-maximum (FWHM) of X-ray rocking curves of the grown AlN layers exhibited very large values (several thousand arcsec), and they became steeply deteriorated with increasing growth rate. To improve the crystalline quality of AlN layer, well-known growth techniques, such as multi-step growth using buffer layers, were used at temperatures above 1200 degrees C in order to lower the disorientation to 300 arcsec. The applications of such "templates" for deep UV light emitting diodes (UV LED) and surface acoustic wave sensors (SAW) are discussed. (C) 2013 Published by Elsevier B.V

Published
2013
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8. Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy

Author

Raphaël Boichot, Alexandre Crisci, Isabelle Gelard, A. Claudel, Krishnan Baskar, Stéphane Coindeau, V. Fellmann, Brigitte Attal-Trétout, Elisabeth Blanquet, Hervé Roussel, D. Pique, M. Balaji, Michel Pons, Aurélie Pierret, Advanced CERamics Deposition (ACERDE), Institut Polytechnique de Grenoble - Grenoble Institute of Technology-ACERDE, Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), ONERA - The French Aerospace Lab [Châtillon], ONERA-Université Paris Saclay (COmUE), Consortium des Moyens Technologiques Communs (CMTC), and Institut National Polytechnique de Grenoble (INPG)

Subjects
010302 applied physics, Materials science, Scanning electron microscope, Mechanical Engineering, Metals and Alloys, Analytical chemistry, Nucleation, 02 engineering and technology, [CHIM.MATE]Chemical Sciences/Material chemistry, Atmospheric temperature range, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, Crystallography, Field electron emission, symbols.namesake, Mechanics of Materials, 0103 physical sciences, Materials Chemistry, symbols, Metalorganic vapour phase epitaxy, Crystallite, 0210 nano-technology, Raman spectroscopy
Abstract

International audience; AlN layers were grown on c-plane sapphire substrates with AlN nucleation layers (NLs) using high temperature hydride vapor phase epitaxy (HT-HVPE). Insertion of low temperature NLs, as those typically used in MOVPE process, prior to the high temperature AlN (HT-AlN) layers has been investigated. The NLs surface morphology was studied by atomic force microscopy (AFM) and NLs thickness was measured by X-ray reflectivity. Increasing nucleation layer deposition temperature from 650 to 850 degrees C has been found to promote the growth of c-oriented epitaxial HT-AlN layers instead of polycrystalline layers. The growth of polycrystalline layers has been related to the formation of dis-oriented crystallites. The density of such disoriented crystallites has been found to decrease while increasing NLs deposition temperature. The HT-AlN layers have been characterized by X-ray diffraction theta - 2 theta scan and (0 0 0 2) rocking curve measurement, Raman and photoluminescence spectroscopies, AFM and field emission scanning electron microscopy. Increasing the growth temperature of HT-AlN layers from 1200 to 1400 degrees C using a NL grown at 850 degrees C improves the structural quality as well as the surface morphology. As a matter of fact, full-width at half-maximum (FWHM) of 0 0 0 2 reflections was improved from 1900 to 864 arcsec for 1200 degrees C and 1400 degrees C, respectively. Related RMS roughness also found to decrease from 10 to 5.6 nm. (C) 2012 Elsevier B. V. All rights reserved.

Published
2012
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9. High Temperature Chemical Vapor Deposition of thick (5 to 20 mm) Aluminum nitride layers

Author

Blanquet, E., Claudel, A., Lay, S., Boichot, R., Coudurier, N., Alexandre CRISCI, Pons, M., Balaji, M., Baskar, K., Champion, Yannick, Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Advanced CERamics Deposition (ACERDE), and Institut Polytechnique de Grenoble - Grenoble Institute of Technology-ACERDE

Subjects
[CHIM.MATE] Chemical Sciences/Material chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2012

10. Structure adaptée à la formation de cellules solaires

Author

Chichignoud, G., Blanquet, E., Isabelle GELARD, Carmen Jiménez, Sarigiannidou, E., Zaidat, K., Weiss, F., Pons, M., Champion, Yannick, Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG), Advanced CERamics Deposition (ACERDE), Institut Polytechnique de Grenoble - Grenoble Institute of Technology-ACERDE, Laboratoire des matériaux et du génie physique (LMGP ), and Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[CHIM.MATE] Chemical Sciences/Material chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry
Published
2012

11. Significance of initial stages on the epitaxial growth of AlN using High Temperature Halide Chemical Vapor Deposition

Author

Balaji, M., Claudel, A., Fellmann, V., Isabelle GELARD, Blanquet, E., Boichot, R., Hervé Roussel, Pique, D., Baskar, K., Pons, M., Champion, Yannick, Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Advanced CERamics Deposition (ACERDE), and Institut Polytechnique de Grenoble - Grenoble Institute of Technology-ACERDE

Subjects
[CHIM.MATE] Chemical Sciences/Material chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2012

12. Vapor phase processes: From HTCVD processes for high rate epitaxial growth to ALD processes for conformal ultra thin film fabrication

Author

Blanquet (invitée), E., Claudel, A., Brizé, V., Boichot, R., Chaussende, D., Pique, D., Mantoux, A., Pons, M., Advanced CERamics Deposition (ACERDE), Institut Polytechnique de Grenoble - Grenoble Institute of Technology-ACERDE, Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG), Laboratoire des matériaux et du génie physique (LMGP ), and Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[CHIM.MATE]Chemical Sciences/Material chemistry, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2011

13. Aluminum nitride homoepitaxial growth on polar and non-polar AlN PVT substrates by high temperature CVD (HTCVD)

Author

Hugues Mank, Elisabeth Blanquet, Michel Pons, A. Claudel, Sorana Luca, G. Berthomé, D. Pique, Raphaël Boichot, Yann Chowanek, Alexandre Crisci, Didier Chaussende, Advanced CERamics Deposition (ACERDE), Institut Polytechnique de Grenoble - Grenoble Institute of Technology-ACERDE, Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), NOVASIC, NOVASiC, Institut de biologie et chimie des protéines [Lyon] (IBCP), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), and Champion, Yannick

Subjects
010302 applied physics, [CHIM.MATE] Chemical Sciences/Material chemistry, Materials science, Band gap, business.industry, 02 engineering and technology, [CHIM.MATE]Chemical Sciences/Material chemistry, Nitride, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, 7. Clean energy, law.invention, Thermal conductivity, Semiconductor, law, Electrical resistivity and conductivity, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Deposition (law), ComputingMilieux_MISCELLANEOUS, Light-emitting diode
Abstract

Due to its wide bandgap (6.2 eV), its high thermal conductivity (3.3 WK-1cm-1) and high electrical resistivity (1013 Ωcm), AlN is a very expected III-N semiconductor for applications in high power electronics (HEMTs) and optoelectronics (UV LEDs). In this work, the homoepitaxial growth of aluminum nitride on polar and non-polar AlN PVT seeds by HTCVD is studied. From our knowledge, the AlN homoepitaxial growth by HVPE or HTCVD on polar and non-polar bulk AlN substrates has not been reported. The potential of investigation in this new range of experiments conditions, i.e. high temperature and high growth rate, as well as the deposition of non-polar AlN crystals (Paskova, Phys. Status Solidi B 245(6), 1011 (2008) and Schwarz and Kneissl, Phys. Status Solidi RRL 1(3), A44 (2007) [1, 2]) is very promising for epitaxial growth and could extend the field of applications (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Published
2011

14. Epitaxial and polycrystalline growth of AlN by high temperature CVD: Experimental results and simulation

Author

Michel Pons, Anne Milet, Elisabeth Blanquet, N. Baccar, Raphaël Boichot, A. Claudel, Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Advanced CERamics Deposition (ACERDE), Institut Polytechnique de Grenoble - Grenoble Institute of Technology-ACERDE, Département de Chimie Moléculaire (DCM), Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université Joseph Fourier - Grenoble 1 (UJF), ANR-08-MAPR-0014,COMPOSiC,Composite SiC/SiC étanche pour milieux extrêmes(2008), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG), Département de Chimie Moléculaire - Chimie Théorique (DCM - CT), and Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université Joseph Fourier - Grenoble 1 (UJF)

Subjects
Materials science, Analytical chemistry, Ab initio, chemistry.chemical_element, 02 engineering and technology, Chemical vapor deposition, Nitride, Epitaxy, Kinetic energy, 01 natural sciences, chemistry.chemical_compound, Aluminium, 0103 physical sciences, Materials Chemistry, [CHIM]Chemical Sciences, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Aluminium nitride, Surfaces and Interfaces, General Chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, chemistry, Crystallite, 0210 nano-technology
Abstract

International audience; AlN growth by HTCVD (High Temperature Chemical Vapor Deposition) from AlCl3 and NH3 is currently a promising way to obtain thick, compact layers of aluminum nitride. This study focused on the development of a kinetic mechanism that models AlN growth with only 7 gas-phase reactions and 4 surface reactions. Ab initio estimation of the thermodynamic data of the AlCl2NH2, AlClNH, AlCl(NH2)2 and Al(NH2)3 intermediates suspected to be involved in the gas-phase reactions is proposed. It was found that only AlCl2NH2 is present in noticeable concentrations under our experimental conditions. Experiments made at different temperatures and N/Al ratios, carried out in a cold wall HTCVD reactor, were used to validate the proposed model. Finally, the N/Al ratio in the gas phase was observed to play a key role in the AlN surface quality. Possible explanations of this influence and future experiments that will confirm this trend are discussed.

Published
2010
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15. Influence of total pressure and precursors flow rates on the growth of aluminum nitride by high temperature chemical vapor deposition (HTCVD)

Author

Blanquet, E., Chaussende, D., Claudel, A., Pique, D., Pons, M., Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Advanced CERamics Deposition (ACERDE), and Institut Polytechnique de Grenoble - Grenoble Institute of Technology-ACERDE

Subjects
[CHIM.MATE]Chemical Sciences/Material chemistry, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2009

16. Growth and Characterization of Thick Polycrystalline AlN Layers by HTCVD

Author

Didier Chaussende, A. Claudel, Stéphane Coindeau, H. Mank, Béatrice Doisneau, Alexandre Crisci, Patrick Chaudouët, Michel Pons, D. Pique, Elisabeth Blanquet, Raphaël Boichot, Roland Martin, Advanced CERamics Deposition (ACERDE), Institut Polytechnique de Grenoble - Grenoble Institute of Technology-ACERDE, Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), NOVASIC, and NOVASiC

Subjects
Materials science, Scanning electron microscope, Analytical chemistry, 02 engineering and technology, Chemical vapor deposition, Epitaxy, 01 natural sciences, symbols.namesake, 0103 physical sciences, Materials Chemistry, Electrochemistry, Graphite, Deposition (law), 010302 applied physics, Renewable Energy, Sustainability and the Environment, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Grain size, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Crystallography, symbols, Crystallite, 0210 nano-technology, Raman spectroscopy
Abstract

International audience; Thick polycrystalline AlN layers were grown at low pressure using high temperature chemical vapor deposition (HTCVD). The experimental setup consists of a graphite susceptor heated by an induction coil surrounding a vertical cold wall reactor. The reactants used were ammonia (NH(3)) and aluminum chloride (AlCl(x)) species formed in situ via chlorine (Cl(2)) reaction with high purity aluminum wire. AlN films were deposited on a 55 mm diameter graphite susceptor between 1200 and 1600 degrees C. AlN layers have been characterized by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and electron backscattered diffraction. The influence of temperature on growth rate, surface morphology, grain size, and crystalline structure is presented. Growth rates of up to 230 mu m/h have been reached. A nonpolar preferred orientation of AlN films is stabilized at a higher temperature. The potential of investigation in this new range of experimental conditions, i.e., high temperature and high growth rate, as well as deposition of nonpolar AlN crystals, is very promising for epitaxial growth and extends the field of applications. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3536477] All rights reserved

Published
2011
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17. On the cracks formation in AlN films grown by chlorinated High Temperature Chemical Vapor Deposition

Author

Latu-Romain, E., Claudel, A., Alexandre CRISCI, Blanquet, E., Michel Mermoux, Doisneau, B., Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG), Advanced CERamics Deposition (ACERDE), Institut Polytechnique de Grenoble - Grenoble Institute of Technology-ACERDE, Laboratoire d'Electrochimie et de Physico-chimie des Matériaux et des Interfaces (LEPMI ), and Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Joseph Fourier - Grenoble 1 (UJF)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
[CHIM.MATE]Chemical Sciences/Material chemistry

18. Atmospheric Science with InSight

Author

Mark T. Lemmon, Sébastien Le Maistre, Matthew P. Golombek, Tanguy Bertrand, Yasuhiro Nishikawa, L. Martire, Antoine Mocquet, Naomi Murdoch, Özgür Karatekin, Rudolf Widmer-Schnidrig, Philippe Lognonné, David Mimoun, Véronique Dehant, Bart Van Hove, Don Banfield, Balthasar Kenda, José Antonio Rodríguez Manfredi, William B. Banerdt, Nicholas A Teanby, Aymeric Spiga, Raphaël F. Garcia, Sebastien Rodriguez, Roland Martin, John Clinton, Ralph D. Lorenz, Quentin Brissaud, François Forget, Suzanne E. Smrekar, Eléonore Stutzmann, Ehouarn Millour, Taichi Kawamura, Eric Beucler, Lucie Rolland, Ingrid Daubar, Tilman Spohn, Nils Mueller, Antoine Lucas, Laboratoire de Météorologie Dynamique (UMR 8539) (LMD), Institut national des sciences de l'Univers (INSU - CNRS)-École polytechnique (X)-École des Ponts ParisTech (ENPC)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Département des Géosciences - ENS Paris, École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL), Institut Universitaire de France (IUF), Ministère de l'Education nationale, de l’Enseignement supérieur et de la Recherche (M.E.N.E.S.R.), Cornell University [New York], University of Bristol [Bristol], Institut de Physique du Globe de Paris (IPGP), Centre National de la Recherche Scientifique (CNRS)-Université de La Réunion (UR)-Université Paris Diderot - Paris 7 (UPD7)-IPG PARIS-Institut national des sciences de l'Univers (INSU - CNRS), Centro de Astrobiologia [Madrid] (CAB), Instituto Nacional de Técnica Aeroespacial (INTA)-Consejo Superior de Investigaciones Científicas [Madrid] (CSIC), Universität Stuttgart [Stuttgart], Département Electronique, Optronique et Signal (DEOS), Institut Supérieur de l'Aéronautique et de l'Espace (ISAE-SUPAERO), Texas A&M University [College Station], Royal Observatory of Belgium [Brussels] (ROB), California Institute of Technology (CALTECH), German Aerospace Center (DLR), Johns Hopkins University Applied Physics Laboratory [Laurel, MD] (APL), Laboratoire de Planétologie et Géodynamique [UMR 6112] (LPG), Université d'Angers (UA)-Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National de la Recherche Scientifique (CNRS), NASA Ames Research Center Cooperative for Research in Earth Science in Technology (ARC-CREST), NASA Ames Research Center (ARC), Géoazur (GEOAZUR 7329), Institut national des sciences de l'Univers (INSU - CNRS)-Observatoire de la Côte d'Azur, COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Université Côte d'Azur (UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Université Côte d'Azur (UCA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD [France-Sud]), Géosciences Environnement Toulouse (GET), Institut national des sciences de l'Univers (INSU - CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Observatoire Midi-Pyrénées (OMP), Météo France-Centre National d'Études Spatiales [Toulouse] (CNES)-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Météo France-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD), Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich] (ETH Zürich), Département des Géosciences - ENS Paris, École normale supérieure - Paris (ENS Paris)-École normale supérieure - Paris (ENS Paris)-Centre National de la Recherche Scientifique (CNRS)-École des Ponts ParisTech (ENPC)-École polytechnique (X)-Institut national des sciences de l'Univers (INSU - CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC), Cornell University, School of Earth Sciences [Bristol], Institut national des sciences de l'Univers (INSU - CNRS)-IPG PARIS-Université Paris Diderot - Paris 7 (UPD7)-Université de La Réunion (UR)-Centre National de la Recherche Scientifique (CNRS), Department of Atmospheric Sciences [College Station], Royal Observatory of Belgium [Brussels], Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut national des sciences de l'Univers (INSU - CNRS)-IPG PARIS-Université Paris Diderot - Paris 7 (UPD7)-Université de La Réunion (UR)-Centre National de la Recherche Scientifique (CNRS), Jet Propulsion Laboratory (JPL), California Institute of Technology (CALTECH)-NASA, Johns Hopkins University (JHU), Astrophysique Interprétation Modélisation (AIM (UMR_7158 / UMR_E_9005 / UM_112)), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences de l'Univers (INSU - CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris Diderot - Paris 7 (UPD7), Laboratoire de Planétologie et Géodynamique UMR6112 (LPG), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences de l'Univers (INSU - CNRS)-Université de Nantes - Faculté des Sciences et des Techniques, Université de Nantes (UN)-Université de Nantes (UN)-Université d'Angers (UA), COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD [France-Sud]), Advanced CERamics Deposition (ACERDE), Institut Polytechnique de Grenoble - Grenoble Institute of Technology-ACERDE, Swiss Seismological Service, DLR Institut für Planetenforschung, Deutsches Zentrum für Luft- und Raumfahrt [Berlin] (DLR), Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut national des sciences de l'Univers (INSU - CNRS)-École polytechnique (X)-École des Ponts ParisTech (ENPC)-Centre National de la Recherche Scientifique (CNRS)-Département des Géosciences - ENS Paris, École normale supérieure - Paris (ENS Paris)-École normale supérieure - Paris (ENS Paris), NASA-California Institute of Technology (CALTECH), Institut national des sciences de l'Univers (INSU - CNRS)-Institut de Recherche pour le Développement (IRD [France-Sud])-Centre National de la Recherche Scientifique (CNRS)-Observatoire de la Côte d'Azur, Université Côte d'Azur (UCA)-Université Côte d'Azur (UCA), École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-École normale supérieure - Paris (ENS-PSL), Institut national des sciences de l'Univers (INSU - CNRS)-Université Paris Diderot - Paris 7 (UPD7)-Université de La Réunion (UR)-Institut de Physique du Globe de Paris (IPG Paris)-Centre National de la Recherche Scientifique (CNRS), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut national des sciences de l'Univers (INSU - CNRS)-Observatoire Midi-Pyrénées (OMP), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)-Météo-France -Institut de Recherche pour le Développement (IRD)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)-Météo-France -Centre National de la Recherche Scientifique (CNRS), Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut national des sciences de l'Univers (INSU - CNRS)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Université Côte d'Azur (UCA)-Université Côte d'Azur (UCA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD [France-Sud]), Consejo Superior de Investigaciones Científicas [Spain] (CSIC)-Instituto Nacional de Técnica Aeroespacial (INTA), Centre National de la Recherche Scientifique (CNRS)-Observatoire Midi-Pyrénées (OMP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Recherche pour le Développement (IRD)-Centre National d'Études Spatiales [Toulouse] (CNES), Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology in Zürich [Zürich] (ETH Zürich), Instituto Nacional de Técnica Aeroespacial (INTA)-Consejo Superior de Investigaciones Científicas [Spain] (CSIC), Université Fédérale Toulouse Midi-Pyrénées-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS), and UCL - SST/ELI/ELIC - Earth & Climate

Subjects
[SPI.OTHER]Engineering Sciences [physics]/Other, 010504 meteorology & atmospheric sciences, Planetary boundary layer, [SDU.STU.GP]Sciences of the Universe [physics]/Earth Sciences/Geophysics [physics.geo-ph], Mars, Atmospheric sciences, 01 natural sciences, [SDU.STU.PL]Sciences of the Universe [physics]/Earth Sciences/Planetology, Autre, Saltation (geology), 0103 physical sciences, Atmospheric science, [SDU.STU.GM]Sciences of the Universe [physics]/Earth Sciences/Geomorphology, [SDU.ENVI]Sciences of the Universe [physics]/Continental interfaces, environment, 010303 astronomy & astrophysics, Dust devil, ComputingMilieux_MISCELLANEOUS, 0105 earth and related environmental sciences, InSight, Radiometer, Astronomy and Astrophysics, Atmosphere of Mars, Mars Exploration Program, Pressure sensor, Planetary science, 13. Climate action, Space and Planetary Science, Atmosphäre, Geology, Planetary atmospheres
Abstract

International audience; In November 2018, for the first time a dedicated geophysical station, the InSight lander, will be deployed on the surface of Mars. Along with the two main geophysical packages, the Seismic Experiment for Interior Structure (SEIS) and the Heat-Flow and Physical Properties Package (HP3), the InSight lander holds a highly sensitive pressure sensor (PS) and the Temperature and Winds for InSight (TWINS) instrument, both of which (along with the InSight FluxGate (IFG) Magnetometer) form the Auxiliary Sensor Payload Suite (APSS). Associated with the RADiometer (RAD) instrument which will measure the surface brightness temperature, and the Instrument Deployment Camera (IDC) which will be used to quantify atmospheric opacity, this will make InSight capable to act as a meteorological station at the surface of Mars. While probing the internal structure of Mars is the primary scientific goal of the mission, atmospheric science remains a key science objective for InSight. InSight has the potential to provide a more continuous and higher-frequency record of pressure, air temperature and winds at the surface of Mars than previous in situ missions. In the paper, key results from multiscale meteorological modeling, from Global Climate Models to Large-Eddy Simulations, are described as a reference for future studies based on the InSight measurements during operations. We summarize the capabilities of InSight for atmospheric observations, from profiling during Entry, Descent and Landing to surface measurements (pressure, temperature, winds, angular momentum), and the plans for how InSight’s sensors will be used during operations, as well as possible synergies with orbital observations. In a dedicated section, we describe the seismic impact of atmospheric phenomena (from the point of view of both “noise” to be decorrelated from the seismic signal and “signal” to provide information on atmospheric processes). We discuss in this framework Planetary Boundary Layer turbulence, with a focus on convective vortices and dust devils, gravity waves (with idealized modeling), and large-scale circulations. Our paper also presents possible new, exploratory, studies with the InSight instrumentation: surface layer scaling and exploration of the Monin-Obukhov model, aeolian surface changes and saltation / lifing studies, and monitoring of secular pressure changes. The InSight mission will be instrumental in broadening the knowledge of the Martian atmosphere, with a unique set of measurements from the surface of Mars.

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