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This review paper reports the prerequisites of a monolithic integrated terahertz (THz) technology capable of meeting the network capacity requirements of beyond-5G wireless communications system (WCS). Keeping in mind that the terahertz signal generation for the beyond-5G networks relies on the technology power loss management, we propose a single computationally efficient software design tool featuring cutting-edge optical devices and high speed III–V electronics for the design of optoelectronic integrated circuits (OEICs) monolithically integrated on a single Indium-Phosphide (InP) die. Through the implementation of accurate and SPICE (Simulation Program with Integrated Circuit Emphasis)-compatible compact models of uni-traveling carrier photodiodes (UTC-PDs) and InP double heterojunction bipolar transistors (DHBTs), we demonstrated that the next generation of THz technologies for beyond-5G networks requires (i) a multi-physical understanding of their operation described through electrical, photonic and thermal equations, (ii) dedicated test structures for characterization in the frequency range higher than 110 GHz, (iii) a dedicated parameter extraction procedure, along with (iv) a circuit reliability assessment methodology. Developed on the research and development activities achieved in the past two decades, we detailed each part of the multiphysics design optimization approach while ensuring technology power loss management through a holistic procedure compatible with existing software tools and design flow for the timely and cost-effective achievement of THz OEICs. [ABSTRACT FROM AUTHOR]

We review the state-of-the-art in monolithic-integrated InP-based system-on-chip (SOC) photonic integrated circuits (PICs) and the extension of this capability to a foundry offering. The learnings and best practices embodied in the design and fabrication capability of commercially deployed monolithically integrated coherent optical communication SOC are leveraged to develop an optimized and scalable integration platform for a turn-key foundry process. The design automation and infrastructure required to enable a consistent reproducible InP-based foundry offering is summarized. [ABSTRACT FROM AUTHOR]

This review paper reports the prerequisites of a monolithic integrated terahertz (THz) technology capable of meeting the network capacity requirements of beyond-5G wireless communications system (WCS). Keeping in mind that the terahertz signal generation for the beyond-5G networks relies on the technology power loss management, we propose a single computationally efficient software design tool featuring cutting-edge optical devices and high speed III–V electronics for the design of optoelectronic integrated circuits (OEICs) monolithically integrated on a single Indium-Phosphide (InP) die. Through the implementation of accurate and SPICE (Simulation Program with Integrated Circuit Emphasis)-compatible compact models of uni-traveling carrier photodiodes (UTC-PDs) and InP double heterojunction bipolar transistors (DHBTs), we demonstrated that the next generation of THz technologies for beyond-5G networks requires (i) a multi-physical understanding of their operation described through electrical, photonic and thermal equations, (ii) dedicated test structures for characterization in the frequency range higher than 110 GHz, (iii) a dedicated parameter extraction procedure, along with (iv) a circuit reliability assessment methodology. Developed on the research and development activities achieved in the past two decades, we detailed each part of the multiphysics design optimization approach while ensuring technology power loss management through a holistic procedure compatible with existing software tools and design flow for the timely and cost-effective achievement of THz OEICs.

U radu su prikazane osnovne karakteristike savremenih materijala: silicijum-germanijuma (SiGe), galijum-arsenida (GaAs) i indijum-fosfida (InP), tehnika i tehnologija koje sa svojim osobinama predstavljaju podršku razvoju suvremenim i budućim radio-frekvencijskim (RF) i fiber-optičkim (FO) aplikacijama koje rade na sve višim frekvencijama i radnim brzinama. Zahtevi tržišta, mogućnosti savremenih materijala i tehnologija diktiraju projektantima usavršavanje pristupa projektovanju sklopova, koje se ogleda kroz više nivoe integracije kola, nova pakovanja i testiranja integrisanih kola (1C). / This paper contains elementary characteristics of materials such as silicon-germanium (SiGe), gallium-arsenide (GaAs) and indium-phosphide (InP), procedures and technologies which support development of modern and future Radio Frequency (RF) and Fiber Optics (FO) applications operating at ever-higher frequencies and speeds. Market requirements, possibilities of modern materials and technologies dictate to designers improvement of the product design the access through higher levels of circuit integration, new packaging and testing of integrated circuits (1C).

Abstract: We describe a novel optical solution for data readout systems. The core of the system is an Indium-Phosphide photonic integrated circuit performing as a front-end readout unit. It functions as an optical serializer in which the serialization of the input signal is provided by means of on-chip optical delay lines. The circuit employs electro-optic phase shifters to build amplitude modulators, power splitters for signal distribution, semiconductor optical amplifiers for signal amplification as well as on-chip reflectors. We present the concept of the system, the design and first characterization results of the devices that were fabricated in a multi-project wafer run. [Copyright &y& Elsevier]

Abstract: The angle resolved X-ray photoelectron spectroscopy measurements were used to monitor a level of contamination of the InP:S (100) substrates during the cleaning processes with deionized water and isopropanol. Some contaminations with carbon and oxygen were found for a broken under ultrahigh vacuum InP:S substrate, indicating the contamination of the crystal during the growth process. The substrates after cleaning with deionized water and isopropanol were contaminated with carbon, oxygen, nitrogen and silicon. Concentration of carbon decreases inwards the substrates while concentration of oxygen is enhanced even in the deeper layers for both processes. The nitrogen concentration is higher for the samples rinsed with water. Roughness of the surfaces is higher for the samples rinsed with water what indicated the AFM measurements. [Copyright &y& Elsevier]

Investigation of the anodic oxide on n-InP has been made with an approach coupling photocurrent transient and capacitance measurements in the dark, associated to chemical surface analysis by photoelectron spectroscopy (XPS). Growth, formation and stability of anodic oxides obtained on n-InP were investigated under illumination at pH 9. A potentiostatic mode has been preferred to explore the chemical evolution of the interface. This study shows that the decay of the photocurrent transients, the modification of the capacitances and the chemical evolution of the surface composition are totally related. The growth of a thin and stable oxide provides a blocking behaviour of the oxidised n-InP toward the photo-transfer. Moreover, our study evidenced a formation and growing of a mixed In-P oxide layer, in three stages. [Copyright &y& Elsevier]