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Our current study employs the spin-polarized density functional theory (DFT) using the all-electron full potential linear augmented plane-wave method (FP-LAPW) to examine the structural, electronic, and magnetic properties of InSb doped with Tungsten (In WxSb with x = 0.125, 0.25) in the zinc blende crystal structure. We used, for the electronic exchange and correlation energy, the generalized gradient approximation (GGA) with the Wu-Cohen (WC) functional, improved with the Tran–Blaha modified Becke–Johnson (TB-mBJ) approach for the electronic properties. The obtained results show that this calculation method allows for reliable band gap values. The estimated structural properties match well with existing experimental results. The value of the total magnetic moment is around 3.00 µB for the investigated compounds, and because of their half-metallic ferromagnetic properties, they are regarded prospective candidates for spintronic applications. [ABSTRACT FROM AUTHOR]

InSb nanoflags, due to their intrinsic spin–orbit interactions, are an interesting platform in the study of planar Josephson junctions. Ballistic transport, combined with high transparency of the superconductor/semiconductor interfaces, is reported to lead to interesting phenomena such as the Josephson diode effect. The versatility offered by the planar geometry can be exploited to manipulate both carrier concentration and spin–orbit strength by electrical means. Herein, experimental results on InSb nanoflag‐based Josephson junctions fabricated with side gates placed in close proximity to the junction are presented. It is shown that side gates can efficiently modulate the current through the junction, both in the dissipative and in dissipation‐less regimes, similar to what is obtained with a conventional back gate. Furthermore, the side gates can be used to influence the Fraunhofer interference pattern induced by the presence of an external out‐of‐plane magnetic field. [ABSTRACT FROM AUTHOR]

InSb self‐assembled quantum dots (QDs) have the possibility to increase the luminescence intensity of light‐emitting diodes operating in the midinfrared region. As a first step toward the midinfrared luminescence, the single‐layer InSb QDs are grown on GaSb (100) substrates by molecular beam epitaxy and the effects of V/III ratio and InSb coverage on size and density of InSb QDs and photoluminescence (PL) characteristics are investigated. As the V/III ratio increases, the distribution of QD height broadens and goes from monomodal to multimodal. The increase in the number of large QDs and their multimodal distribution are thought to be due to the ripening process. The PL intensity is maximum at a V/III ratio of 2 with PL wavelength of 1.76 μm. As the InSb coverage increases at a V/III ratio of 2, QD size and density increase while maintaining a monomodal distribution in QD size. However, the PL peak intensity decreases with increasing InSb coverage due to the increase of nonradiative QDs. The highest PL peak intensity at an InSb coverage of 2.0 monolayer and a V/III ratio of 2 with PL wavelength of 1.69 μm are obtained. The present single‐layer InSb QD shows the emission in the near‐infrared region. [ABSTRACT FROM AUTHOR]

Infrared (IR) optoelectronics have become important owing to their various applications, such as recognition, autonomous driving, and quantum communications. In particular, detection beyond 1400‐nm wavelength in the shortwave IR (SWIR) spectrum (i.e., 1550 nm) is important for eye safety, and long‐range communication. Recently, group III–V (InAs or InSb) colloidal quantum dots (CQDs) have attracted considerable interest due to their broadband optical tunability and toxic‐elements (Pb and Hg)‐free properties. Herein, a new approach is developed to synthesize highly monodispersed InSb CQD by employing the continuous injection method, which enables facile optical bandgap tuning at a SWIR wavelength of up to 0.9 eV. Furthermore, solution ligand exchange using halides and thiolates results in effective passivation of the InSb CQD surface and renders a stable p‐type CQD ink. Finally, bulk heterojunction (BHJ) structure is demonstrated using n‐type InAs:p‐type InSb CQDs, which exhibits broad absorption up to 1600 nm, and a sixfold higher responsivity compared with the pristine InSb CQD device due to the efficient charge transport in BHJ CQD solids. [ABSTRACT FROM AUTHOR]

Semiconductor nanowire (NW) quantum devices offer a promising path for the pursuit and investigation of topologically-protected quantum states, and superconducting and spin-based qubits that can be controlled using electric fields. Theoretical investigations into the impact of disorder on the attainment of dependable topological states in semiconducting nanowires with large spin–orbit coupling and g -factor highlight the critical need for improvements in both growth processes and nanofabrication techniques. In this work, we used a hybrid lithography tool for both the high-resolution thermal scanning probe lithography and high-throughput direct laser writing of quantum devices based on thin InSb nanowires with contact spacing of 200 nm. Electrical characterization demonstrates quasi-ballistic transport. The methodology outlined in this study has the potential to reduce the impact of disorder caused by fabrication processes in quantum devices based on 1D semiconductors. [ABSTRACT FROM AUTHOR]

InBi is a topological nodal line semimetal with strong spin–orbit coupling. It is epitaxially compatible with III–V semiconductors and, hence, an attractive material for topological spintronics. However, growth by molecular beam epitaxy (MBE) is challenging owing to the low melting point of InBi and the tendency to form droplets. We investigate approaches for epitaxial growth of InBi films on InSb(001) substrates using MBE and periodic supply epitaxy (PSE). It was not possible to achieve planar, stoichiometric InBi heteroepitaxy using MBE growth over the parameter space explored. However, pseudomorphic growth of ultra-thin InBi(001) layers could be achieved by PSE on InSb(001). A remarkable change to the in-plane epitaxial orientation is observed. [ABSTRACT FROM AUTHOR]

This paper discusses the optimization of the growth temperature and Sb/In ratio of 1 µm InSb thin films grown on GaAs substrates by molecular beam epitaxy due to the InSb materials with larger lattice constants have smaller growth windows. The results show that atomic steps can be clearly seen in InSb thin films grown at 420 °C with a Sb/In ratio of 6. The InSb material grown under this condition has the smallest FWHM, indicating the best crystal quality. At the same time, the highest electron mobility measured at room temperature is 38860 cm2 V−1 s−1. The transport properties and crystal quality of InSb/AlxIn1‐xSb heterostructures corresponding to different Al compositions are also studied. The results show that as the Al component increases, dislocation scattering caused by lattice mismatch affects the electron mobility of the channel layer. The highest electron mobility of InSb/AlxIn1‐xSb heterostructures obtained is 18900 cm2 V−1 s−1 at room temperature. [ABSTRACT FROM AUTHOR]

The methods of passivating the mesastructures of photodetectors based on InSb/In Al Sb nBn heterostructures grown by molecular-beam epitaxy are studied. The mesastructures are formed by photolithography and liquid etching. Two different dielectrics, Al O and Si N , are used to passivate the surface of mesastructures. It is shown that the Si N dielectric efficiently passivates the surface of mesastructures, and the bulk current channel is predominant, whereas the surface leakage current prevails in the Al O passivated mesastructures. At small reverse biases, the correlation between the current and surface area of a mesastructure is violated due to the influence of defects. Modeling the current–voltage characteristics of mesastructures at 77 K shows that the major contribution to the dark current is made by the tunneling current of electrons through the In Al Sb barrier. [ABSTRACT FROM AUTHOR]

Our study examined how native oxide layers, InN and InSb, affected the current-voltage and capacitance-voltage characteristics of the Au/n-InP Schottky diode at a temperature of 300 K with and without interface states, traps, and tunneling current. The simulation was carried out using the Atlas-Silvaco-Tcad device simulator. From our results, we found that the effective barrier heights were measured to be 0.474 eV, 0.544 eV, and 0.561 eV via I-V measurements and 0.675 eV, 0.817 eV, and 0.80 eV via C-V measurements. Additionally, we utilized the high-low frequency method to calculate the average density of interface state density, which was determined to be approximately 6.03 . 1011 and 3.33 . 1012 сm – 2 . eV – 1. The results indicate that a thin film of InN and InSb can effectively passivate the InP surface, as evidenced by the good performance of the passivized sample. [ABSTRACT FROM AUTHOR]

Abstract The attainment of dynamic tunability in spectrally selective optical absorption has been a longstanding objective in modern optics. Typically, Fabry–Perot resonators comprising metal and semiconductor thin films have been employed for spectrally selective light absorption. In such resonators, the resonance wavelength can be altered via structural modifications. The research has progressed further with the advent of specialized patterning of thin films and the utilization of metasurfaces. Nonetheless, achieving dynamic tuning of the absorption wavelength without altering the geometry of the thin film or without resorting to lithographic fabrication still poses a challenge. In this study, the incorporation of a metal-oxide-semiconductor (MOS) architecture into the Fabry–Perot nanocavity is shown to yield dynamic spectral tuning in a perfect narrowband light absorber within the visible range. Such spectral tuning is achieved using n-type-doped indium antimonide and n-type-doped indium arsenide as semiconductors in a MOS-type structure. These semiconductors offer significant tuning of their optical properties via electrically induced carrier accumulation. The planar structure of the absorber models presented facilitates simple thin-film fabrication. With judicious material selection and appropriate bias voltage, a spectral shift of 47 nm can be achieved within the visible range, thus producing a discernible color change.

The temperature dependence of the dark current in InAsSb-based p–n photodiodes detecting radiation in the medium-wave infrared (MWIR) region have been calculated, taking into account material characteristics of InAs1 – xSbx alloy. The desired signal-to-noise ratio is ∼103 at T = 150 K, which confirms the possibility of achieving high photovoltaic parameters in InAs1 – xSbx photodiodes and their usage in high-temperature applications. [ABSTRACT FROM AUTHOR]

A novel metamaterial absorber sensor has been proposed for refractive index measurement in the range of [1-2] for the THz frequency band. This structure is based on using a plasmonic coaxial resonator which is excited by an InSb cylinder. Surface Plasmon Polaritons (SPPs) are excited on the surface of the InSb cylinder due to an inward plane wave and propagate downward toward the cavity and through it. Based on the radius and height of the InSb cylinder, the “high-absorption” and “highquality factor” sensing performance is introduced and analyzed. It is shown that nearly 98% absorption can be achieved for all the range of refractive index [1-2] at 1.8622 THz and in the case of “high-quality factor”, absorption reaches nearly 100% for the refractive index range of [1.5-2]. Also, by changing the radius and height of the cavity, absorption can be changed. Furthermore, sensitivity, quality factor, and figure of merit in the range of 166-672 GHz per refractive index unit (GHz/RIU), 69.1-118.7 and 10.2-29.7 is achievable, respectively. A wide range of refractive index measurements besides superior sensing performance made this structure a good candidate for sensing applications such as medical and biological applications. [ABSTRACT FROM AUTHOR]

Mid-wavelength InSb and HgCdTe photodiodes (PDs) passivated with polycrystalline CdTe films have been studied. Passivating layers were deposited at low temperatures by the hot-wall epitaxy (HWE) technique. The PDs were characterized by measurements of the dark current and minority carrier lifetime. It is shown that heterovalent and isovalent (CdTe/InSb and CdTe/HgCdTe) interfaces have different effects on the PD characteristics. Passivation of HgCdTe does not affect the lifetime of the carriers, but the stability of the dark current in passivated PDs is insufficient for long-term operation. In the InSb PDs, the processing steps, including successive etching in CP4A and HCl etchants, sulfidization in an aqueous solution of Na2S, followed by the deposition of a protective CdTe layer, led to the best result. It has been established that the electrical properties of the passivating layers of polycrystalline CdTe are determined by the space charge-limited current. Conclusions are drawn about the applicability of the HWE technique for the passivation of infrared photodetectors. [ABSTRACT FROM AUTHOR]

Thermoelectric‐based waste heat recovery requires efficient materials to replace conventional non‐eco‐friendly Te‐ and Pb‐based commercial devices. Ternary copper chalcogenide‐based famatinite (Cu3SbS4) compound is one of the practical substitutes for traditional thermoelectric materials. However, the pristine Cu3SbS4 inherits poor structural complexion, large thermal conductivity, and low power conversion efficiency. To develop high‐efficiency Cu3SbS4, InSb nanoinclusions are incorporated via high‐energy ball milling followed by the hot‐press densification method. Incorporating InSb nanoinclusions to lower thermal conductivity via phonon scattering while increasing the thermopower via a carrier energy filtering process. The thermoelectric performance (ZT) of ≈0.4 at 623 K is obtained in Cu3SbS4‐3 mol% InSb nanocomposite, which is ≈140% higher than pure Cu3SbS4. Both mechanical and thermal stability are improved by grain boundary hardening and dispersion strengthening. Thus, a facile nanostructured Cu3SbS4 with added InSb nanoinclusions is delivered as a highly efficient, eco‐friendly, structurally‐, thermally‐, and mechanically‐stable material for next‐generation thermoelectric generators. [ABSTRACT FROM AUTHOR]

Sb speciation analysis is important in relation to industrial exposure or environmental release because of the large difference in toxicity between SbIII and SbV. In this study, the release of Sb species from a semiconductor material (undoped and Bi-doped InSb thin films) in 0.1 mol/L sodium acetate buffer was investigated using hydride generation–microwave plasma-atomic emission spectroscopy (HG–MP-AES). Total Sb was determined using our previously reported method, and SbIII concentration was measured without reduction by potassium iodide and with a lower sodium tetrahydroborate/sodium hydroxide concentration. To estimate the SbV concentration, the SbIII concentration was subtracted from the total Sb concentration. The Sb species were not changed by Bi doping, even though Bi doping suppressed the Sb elution from the thin films. A large fraction of Sb eluted as SbIII during leaching for 28 days. This is the first Sb speciation analysis using HG–MP-AES of eluates from Sb-based materials. Sb speciation analysis using HG–MP-AES is cost effective, reliable, and requires only simple sample preparation. [ABSTRACT FROM AUTHOR]

InBi is a topological nodal line semimetal with strong spin–orbit coupling. It is epitaxially compatible with III–V semiconductors and, hence, an attractive material for topological spintronics. However, growth by molecular beam epitaxy (MBE) is challenging owing to the low melting point of InBi and the tendency to form droplets. We investigate approaches for epitaxial growth of InBi films on InSb(001) substrates using MBE and periodic supply epitaxy (PSE). It was not possible to achieve planar, stoichiometric InBi heteroepitaxy using MBE growth over the parameter space explored. However, pseudomorphic growth of ultra-thin InBi(001) layers could be achieved by PSE on InSb(001). A remarkable change to the in-plane epitaxial orientation is observed.

Thermoelectric‐based waste heat recovery requires efficient materials to replace conventional non‐eco‐friendly Te‐ and Pb‐based commercial devices. Ternary copper chalcogenide‐based famatinite (Cu3SbS4) compound is one of the practical substitutes for traditional thermoelectric materials. However, the pristine Cu3SbS4 inherits poor structural complexion, large thermal conductivity, and low power conversion efficiency. To develop high‐efficiency Cu3SbS4, InSb nanoinclusions are incorporated via high‐energy ball milling followed by the hot‐press densification method. Incorporating InSb nanoinclusions to lower thermal conductivity via phonon scattering while increasing the thermopower via a carrier energy filtering process. The thermoelectric performance (ZT) of ≈0.4 at 623 K is obtained in Cu3SbS4‐3 mol% InSb nanocomposite, which is ≈140% higher than pure Cu3SbS4. Both mechanical and thermal stability are improved by grain boundary hardening and dispersion strengthening. Thus, a facile nanostructured Cu3SbS4 with added InSb nanoinclusions is delivered as a highly efficient, eco‐friendly, structurally‐, thermally‐, and mechanically‐stable material for next‐generation thermoelectric generators.

The spectral characteristics of indium-antimonide photodetectors working in the mid-IR spectral range for detection, recognition, and identification of thermal objects are studied. The quantum efficiency is calculated versus the design parameters of photodiodes with allowance for the passage of radiation through antireflection coating and reflection from the p+-layer/ohmic contact interface with subsequent reabsorption in the photodiode structure. An analytical model of the absorption coefficient of indium antimonide taking into account the Burstein–Moss effect and the Urbach rule is developed. The optimal thickness of the base layer of the photodiode is determined for different lifetimes of minority carriers. [ABSTRACT FROM AUTHOR]

The attainment of dynamic tunability in spectrally selective optical absorption has been a longstanding objective in modern optics. Typically, Fabry–Perot resonators comprising metal and semiconductor thin films have been employed for spectrally selective light absorption. In such resonators, the resonance wavelength can be altered via structural modifications. The research has progressed further with the advent of specialized patterning of thin films and the utilization of metasurfaces. Nonetheless, achieving dynamic tuning of the absorption wavelength without altering the geometry of the thin film or without resorting to lithographic fabrication still poses a challenge. In this study, the incorporation of a metal-oxide-semiconductor (MOS) architecture into the Fabry–Perot nanocavity is shown to yield dynamic spectral tuning in a perfect narrowband light absorber within the visible range. Such spectral tuning is achieved using n-type-doped indium antimonide and n-type-doped indium arsenide as semiconductors in a MOS-type structure. These semiconductors offer significant tuning of their optical properties via electrically induced carrier accumulation. The planar structure of the absorber models presented facilitates simple thin-film fabrication. With judicious material selection and appropriate bias voltage, a spectral shift of 47 nm can be achieved within the visible range, thus producing a discernible color change. [ABSTRACT FROM AUTHOR]

Wide band gap semiconductor nanomaterials have great research prospects in power semiconductor devices, radio frequency devices, optoelectronic sensor devices, and so on. Among them, gallium oxide is considered as the representative material of wide band gap semiconductor nanomaterials as a deep ultraviolet (UV) photoelectric sensing device because of its 4.9 eV band gap width. However, the traditional synthesis of this kind of metal oxide semiconductor nanomaterials by the chemical vapor deposition (CVD) method still has some problems. The experimental process is not easy to achieve due to the high temperature of 960 °C, and the lower photocurrent makes it difficult to read the photoelectric signal for subsequent devices because of the optical response current of the order of nanoampere. In this work, gallium antimonide and indium antimonide were selected as the nutrition reaction materials, while oxygen is used as the oxide materials. InGaO3 nanowire network materials were prepared at a lower temperature of 700 °C and a lower working pressure of 0.2 kPa, the deep UV photoelectric response of the optoelectronic devices was measured, and high performance was obtained at 5 V bias, like at a power of 0.64 μW/cm2, the response is 80.1 A/W, detection is 1.03 × 1014, and the external quantum efficiency is 3.9 × 104. Especially, the photoelectric current 34.1 μA is far larger than that of the level of several nanoampere traditional gallium oxide devices. Its reaction principle is that In and Ga metal nucleate and oxidize on the substrate to form InGaO3 nanowires after antimonide decomposition at 700 °C temperature, which is lower than 960 °C of the traditional CVD reaction method. This mechanism is different from that of traditional graphite and oxide powder reduction, which can save energy. In a word, this research has invented a method for preparing indium doping gallium oxide nanomaterials, which provides a reference for rapid preparation of response materials and low-energy consumption for deep UV photoelectric devices. [ABSTRACT FROM AUTHOR]

Indium Antimonide (InSb) is a semiconductor material with unique properties, that are suitable for studying new quantum phenomena in hybrid semiconductor‐superconductor devices. The realization of such devices with defect‐free InSb thin films is challenging, since InSb has a large lattice mismatch with most common insulating substrates. Here, the controlled synthesis of free‐standing 2D InSb nanostructures, termed as "nanoflakes", on a highly mismatched substrate is presented. The nanoflakes originate from the merging of pairs of InSb nanowires grown in V‐groove incisions, each from a slanted and opposing {111}B facet. The relative orientation of the two nanowires within a pair, governs the nanoflake morphologies, exhibiting three distinct ones related to different grain boundary arrangements: no boundary (type‐I), Σ3‐ (type‐II), and Σ9‐boundary (type‐III). Low‐temperature transport measurements indicate that type‐III nanoflakes are of a relatively lower quality compared to type‐I and type‐II, based on field‐effect mobility. Moreover, type‐III nanoflakes exhibit a conductance dip attributed to an energy barrier pertaining to the Σ9‐boundary. Type‐I and type‐II nanoflakes exhibit promising transport properties, suitable for quantum devices. This platform hosting nanoflakes next to nanowires and nanowire networks can be used to selectively deposit the superconductor by inter‐shadowing, yielding InSb‐superconductor hybrid devices with minimal post‐fabrication steps. [ABSTRACT FROM AUTHOR]

Micropillar compression is a method of choice to understand mechanics at small scale. It is mainly studied with electron microscopy or white‐beam micro‐Laue X‐ray diffraction. The aim of the present article is to show the possibilities of the use of diffraction with a coherent X‐ray beam. InSb micropillars in epitaxy with their pedestals (i.e. their support) are studied in situ during compression. Firstly, an experiment using a collimated beam matching the pillar size allows determination of when the sample enters the plastic regime, independently of small defects induced by experimental artefacts. A second experiment deals with scanning X‐ray diffraction maps with a nano‐focused beam; despite the coherence of the beam, the contributions from the pedestal and from the micropillar in the diffraction patterns can be separated, making possible a spatially resolved study of the plastic strain fields. A quantitative measurement of the elastic strain field is nevertheless hampered by the fact that the pillar diffracts at the same angles as the pedestal. Finally, no image reconstructions were possible in these experiments, either in situ due to a blurring of the fringes during loading or post‐mortem because the defect density after yielding was too high. However, it is shown how to determine the elastic bending of the pillar in the elastic regime. Bending angles of around 0.3° are found, and a method to estimate the sample's radius of curvature is suggested. [ABSTRACT FROM AUTHOR]

We propose a temperature-tunable and dual-broadband switchable coherent perfect absorber (CPA) composed of an annulus-disk-shaped InSb pattern and a complementary graphene layer. By controlling the Fermi level of graphene, the temperature of InSb, or the relative phase of incident beams, the working frequency and absorption of the CPA can be continuously adjusted. For a Fermi energy of 0 eV, the dual-band coherent perfect absorptivities exceed 99%. The designed structure achieves broadband absorptance of over 90% in the frequency range of 0.145 THz to 1.24 THz, with a relative bandwidth of about 158.12% for a Fermi energy of 0.5 eV. Moreover, the temperature-dependent permittivity of InSb enables thermal tuning of the dual-band CPA in the THz region. Furthermore, by altering the relative phase of input beams, the absorptivity can be continuously varied between less than 1.2% and more than 90% in the dual-band and broadband modes. Additionally, the designed CPA exhibits insensitivity to the polarization angle within the range of 0° to 90°. Therefore, this multifunctional CPA holds significant potential for applications in modulation, sensing, all-optical switches, and coherent photodetectors.

Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work, we consider both aspects. We developed InSb NW with thin diameters, as well as a novel gating approach, involving few-layer graphene and atomic layer deposition-grown AlO _x . Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry–Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.

Herein, the effect of tensile and compressive stress on the performance of a 3 × 3 InSb array as an infrared photodetector is investigated. At first, the effect of mesh sizes on simulated results is evaluated and the results are validated with a good agreement. It is shown that the main effect of stress is related to the Γ (bandgap) point of the band structure. This shift causes the densities of intrinsic and minority carriers to decrease in the case of tensile stress and increase in the case of compressive stress. Using a 3D simulation, it is investigated that tensile stress reduces the dark current while compressive stress induces that. However, it is an interesting result that an increment in applied compressive stress interrupts the InSb photodetector performances and vice versa tensile stress helps the photocurrent to have a lower dark current. So, these results can be used to manage the dark current in the field of the photodetector. Finally, the crosstalk of the simulated structure as one of its main characteristics is calculated. [ABSTRACT FROM AUTHOR]

The features of the electroluminescence spectra of narrow-gap type II InAs/InSb/InAs heterostructures containing a single layer of InSb quantum dots placed into the p-n-InAs junction were studied. The luminescent properties of the heterostructures under a forward and reverse bias in the temperature range of 77–300 K were investigated as a function of the surface density of nano-objects buried in the narrow-gap matrix. When applying the reverse bias to the heterostructures under study, the suppression of negative interband luminescence and the dominance of interface recombination transitions at the InSb/InAs type II heterojunction were observed at room temperature. The radiation, which corresponded to recombination transitions involving localized electron-hole states of the InSb quantum dots, was revealed and recorded at low temperatures. [ABSTRACT FROM AUTHOR]

Small-pixel is one of the development directions of InSb infrared focal plane devices, but it will have a greater impact on the photocurrent response and crosstalk of the device. Therefore, the mesa junction device model, the planar junction device model and the epitaxial device model of the small-pixel InSb infrared focal plane array device are established using Sentaurus TCAD software. The back-incident three-pixel InSb array devices are used to simulate the photocurrent response and crosstalk of the three device models. The results show that the photocurrent response can be increased and the crosstalk can be reduced for the mesa junction device and the planar junction device by reducing device thickness and increasing junction depth, and the photocurrent response and crosstalk can be improved for the epitaxial InSb device by increasing the thickness of absorption layer and selecting an appropriate doping concentration. Considering the influence of process difficulty, it is re-commended to adopt a deep ion implanted planar junction structure or an epitaxial structure with controllable thickness and doping concentration prepared by molecular beam epitaxy.

[Display omitted] • InSb nanocrystals in Si-based structures are proposed as multifunctional crystals. • InSb nanocrystals can by ion-beam synthesized at the Si/SiO 2 interface. • The InSb nanocrystal growth direction at the Si/SiO 2 interface can changed. • The InSb nanocrystal nucleation occurs at Sb nanoclusters in Si near the interface. • The optical phonon mode depends on the InSb nanocrystal growth direction. The effect of annealing time on the InSb nanocrystal formation in a silicon-on-insulator structure, containing, near the Si/SiO 2 interface, Si and SiO 2 regions implanted with Sb+ and In+ ions, respectively, was studied. The annealing temperature was 1100 °C. A change in the nanocrystal growth direction was obtained as the annealing time increased from 1 to 90 min. After the 1 min annealing, the InSb nanocrystals grew within the Si matrix and were faceted. As the annealing time increased to 90 min, the nanocrystals grew from the Si/SiO 2 interface into the SiO 2 matrix; they had a half-spherical shape. A respective change in the phonon mode was observed, too. The origin of the obtained effect is discussed. [ABSTRACT FROM AUTHOR]

Indium antimonide (InSb) materials have been widely used in infrared photoelectric detectors and other fields because of their special properties. With the development of larger arrays of mid-infrared focal plane detectors and a growing demand for low-cost InSb infrared detectors, the desired size for the InSb wafers also increases. In this paper, a new structure of graphite rest and high precision low damage single line cutting were combined to develop a 5 inch InSb crystal oriented segmentation. Low damage edge chamfering techniques while optimizing grinding parameters were used to improve the grinding of 5 inch InSb wafers. An optimized mounting process were used to further improve the flatness of polished 5 inch InSb wafers. Furthermore, the pH value and polishing solution ratio were optimized to improve the surface quality of 5 inch InSb wafers. At the same time, the crystal orientation and deviation, polished surface macroscopic quality, geometric parameters, surface roughness and lattice quality of 5 inch InSb wafers were analyzed using an X-ray crystal orientation instrument and atomic force microscope. The test results show that, high quality 5 inch InSb wafers can be created more readily by this newly optimized process, helping to meet the current demand for InSb materials in IR detectors and other fields. [ABSTRACT FROM AUTHOR]

In recent years, there has been a rapid improvement in photonics products due to the use of multilayer heterostructures grown on the basis of advanced materials; designing the structure of a photosensitive element (PSE) to achieve the minimum dark current, which in turn leads to a change in generations of matrix photodetector modules (PDMs). Several different types of PDMs based on InSb epitaxial structures for the range of 3–5 μm, based on GaAs/AlGaAs QWIP-structures for the range 7.8–9.0 μm, and based on InGaAs XBn-structures for the range 0.9–1.7 μm were developed and investigated. The foreign analogs are shown, and the advantages given by the new capabilities offered by new detector technologies are considered. [ABSTRACT FROM AUTHOR]

â...˘â€"â...¤ semiconductor compound InSb with a zinc blende structure and extremely high electron mobility was grown as a thin film on SrTiO3 (STO)(001) substrate by pulsed laser deposition. The growth of (111) oriented InSb was observed despite a large lattice mismatch of 1.6% ([1âˆ'10]InSb ∣∣ [010]STO) and 17.8% ([11âˆ'2]InSb ∣∣ [100]STO). Electron mobility of 94 cm2 Vâˆ'1sâˆ'1 at room temperature was confirmed by Hall effect measurement and the magnetic field reversal down to 1 Oe was detected. Growth of InSb/STO (001) thin film could be a promising approach for the detection of magnetic signals from various perovskite type functional oxide materials and will find applications in future devices. [ABSTRACT FROM AUTHOR]

The ability to precisely measure magnetic fields under extreme operating conditions is becoming increasingly important as a result of the advent of modern diagnostics for future magnetic-confinement fusion devices. These conditions are recognized as strong neutron radiation and high temperatures (up to 350 °C). We report on the first experimental comparison of the impact of neutron radiation on graphene and indium antimonide thin films. For this purpose, a 2D-material-based structure was fabricated in the form of hydrogen-intercalated quasi-free-standing graphene on semi-insulating high-purity on-axis 4H-SiC(0001), passivated with an Al2O3 layer. InSb-based thin films, donor doped to varying degrees, were deposited on a monocrystalline gallium arsenide or a polycrystalline ceramic substrate. The thin films were covered with a SiO2 insulating layer. All samples were exposed to a fast-neutron fluence of ≈ 7 × 10 17 cm−2. The results have shown that the graphene sheet is only moderately affected by neutron radiation compared to the InSb-based structures. The low structural damage allowed the graphene/SiC system to retain its electrical properties and excellent sensitivity to magnetic fields. However, InSb-based structures proved to have significantly more post-irradiation self-healing capabilities when subject to proper temperature treatment. This property has been tested depending on the doping level and type of the substrate. [ABSTRACT FROM AUTHOR]

[Display omitted] • The electron population near the conduction band minimum of InSb includes two different-laser-fluence-dependent growth processes. • The effects of varying the pump fluence on the band gap of InSb were systematically investigated. • The electrostatic field on the surface of InSb can be dressed by medium ultrafast pulsed lasers. Studying ultrafast dynamical processes is essential for understanding light-matter coupling, which is crucial for the optoelectronic and photonic applications of semiconductor materials. Herein, we investigate the evolution of electron population near the conduction band minimum (CBM) and band gap in InSb (100) crystal under different laser fluences using time- and angle-resolved photoelectron spectra (TrARPES). In contrast to the pump-fluence-independent fast growth process (FP) of the electron population, the slow process (SP) is fluence sensitive, which is similar to the temperature-dependent behavior observed in InSb (110). In addition, we observe a band gap enlargement with increasing the photoexcitation flux. Comprehensive analysis reveals that these observed diverse results are attributed to the laser-tunable dielectric function on the surface of InSb. Our findings not only enhance the understanding of laser-semiconductor interactions but also broaden the potential applications in the field of optoelectronic and photonic devices. [ABSTRACT FROM AUTHOR]

Full-space metasurfaces are attracting much attention for their capability to concomitantly manipulate transmitted and reflected waves of incident waves. In this thesis, a tunable full-space metasurface based on Pancharatnam-Berry (PB) phase modulation and InSb temperature characteristics is proposed. After the circularly polarized (CP) waves pass through the metasurface, the incident CP waves are converted into cross-polarized CP waves at 0.56 THz, which has an effective transmission amplitude of 80%, and the transmission amplitude can be adjusted by raising the temperature of InSb from 200K to 330K, which can reduce the transmission amplitude to about 20%; it is capable of reflecting co-polarized CP waves over a wide bandwidth of 1.6–1.75 THz and the reflection amplitude is up to 92%. The wavefronts of CP waves in transmission and reflection modes are modulated independently of each other at two terahertz frequencies by PB phase without interfering with each other, and by altering the geometrical parameters corresponding to the transmission or reflection modes of the unit structure, phase coverage of 0∼2π in the corresponding modes can be obtained independently. As proof of concept, a series of terahertz wavefront modulation devices, such as single-focus tunable metalens and dual-channel point focusing reflective metalens, full-space deflective vortex beams and full-space holographic imaging via the (Gerchberg-Saxton) GS algorithm, are designed through the combinantion of the PB phase with the theory of metasurface scattering in two modes. Our work significantly expands the ability of full-space metasurfaces to control electromagnetic waves, and the proposed metasurfaces have the property of simultaneously and independently modulating transmitted and reflected wavefronts, which show promising applications in full-space terahertz high-resolution imaging and high-speed broadband communications. • The tunable full-space metasurface can adjust the transmission amplitude of cross-polarized circularly polarized waves in transmission mode can be adjusted by the temperature of Insb at 0.56 THz, and the reflection amplitude of co-polarized circularly polarized waves is about 92% in the wide bandwidth of 1.6–1.75 THz. • Switchable single-focus metalens with "on" and "off" states in transmission mode and dual-focus circularly polarized wave focusing in reflection mode. • Generation of different deflected vortex beams in transmission and reflection modes. • Holographic imaging of circularly polarized waves with transmission and reflection mode multiplexing. [ABSTRACT FROM AUTHOR]

Finite temperature effects are important within the interplay among surface plasmons and external magnetic fields. The research utilizes the linearized Vlasov–Maxwell version equations to find out the dispersion traits of Surface Magnetoplasmon Polaritons (SMPs) at the interface of a vacuum-semiconductor in the Voigt reflection geometry. The dielectric tensor components are expressed when it comes to the Fermi–Dirac distribution characteristic-primarily based completely plasma dispersion features. The results are applied within the parametric range of indium antimonide (InSb) across numerous temperatures within the allowed terahertz domain. The outcomes are presented numerically and graphically. [ABSTRACT FROM AUTHOR]

• The transport properties of the two-steps MBE and MOCVD growth of InSb thin films on SI-GaAs substrates were determined. • The electron mobilities of InSb grown by MBE and MOCVD were 38247 cm2/Vs and 51704 cm2/Vs, respectively. • Low temperature magnetoresistance measurements showed clear Shubnikov-de-Haas oscillations (SdH) for only in MBE grown InSb. • The effective mass of InSb-MB is found as 0.034 ± 0.002 m 0. • The Raman analysis were performed on both structures to support the transport results. Temperature-dependent carrier transport properties of two InSb epilayers grown on GaAs substrates by Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) are investigated. The InSb epilayer grown by MBE was undoped, but the undoped InSb epilayer grown by MOCVD was grown on a thin Zn-doped InSb layer. Hall Effect results showed that the Hall coefficients (R H) for InSb grown by MBE and MOCVD are negative in temperature ranges 4.2 K–300 K and 200 K–300 K, respectively. However, for the InSb sample grown by MOCVD, R H switches from a positive to a negative value for temperatures above ∼180 K, which could be due to the capture electrons generated from dislocation between InSb and GaAs by Zn atoms. The electron mobilities of InSb grown by MBE and MOCVD were 38,247 and 51,704 cm2/Vs, respectively. Low-temperature magnetoresistance measurements showed clear Shubnikov-de-Haas oscillations (SdH) in MBE InSb; however, no SdH oscillations were observed in MOCVD InSb samples. [ABSTRACT FROM AUTHOR]

Herein, we demonstrate a facile technique for the fabrication of one-dimensional indium antimonide (InSb) nanowires using anodic aluminium oxide (AAO) template-assisted vacuum die-casting method. The filling mechanism of the vacuum die-casting process is investigated on varying AAO pore structures through different electrolytes. It is found that the anodizing electrolytes play a vital role in nanowire growth and structure formation. The as-obtained InSb nanowires from the dissolution process show a degree of high crystallinity, homogeneity, and uniformity throughout their structure. The TEM and XRD results elucidated the InSb zinc-blende crystal structure and preferential orientation along the c-axis direction. The thermoelectric characteristics of InSb nanowires were measured with a four-electrode system, and their resistivity, Seebeck coefficient, power factor, thermal conductivity, and ZT have been evaluated. Further, surface-modified nanowires using the reactive-ion etching technique showed a 50% increase in thermoelectric performance. [ABSTRACT FROM AUTHOR]

Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, that is, strong spin‐orbit interaction and large Landé g‐factor. Integrating InSb nanowires with other materials could potentially unfold novel devices with distinctive functionality. A prominent example is the combination of InSb nanowires with superconductors for the emerging topological particles research. Here, the combination of the II–VI cadmium telluride (CdTe) with the III–V InSb in the form of core–shell (InSb–CdTe) nanowires is investigated and potential applications based on the electronic structure of the InSb–CdTe interface and the epitaxy of CdTe on the InSb nanowires are explored. The electronic structure of the InSb–CdTe interface using density functional theory is determined and a type‐I band alignment is extracted with a small conduction band offset (⩽0.3 eV). These results indicate the potential application of these shells for surface passivation or as tunnel barriers in combination with superconductors. In terms of structural quality, it is demonstrated that the lattice‐matched CdTe can be grown epitaxially on the InSb nanowires without interfacial strain or defects. These shells do not introduce disorder to the InSb nanowires as indicated by the comparable field‐effect mobility measured for both uncapped and CdTe‐capped nanowires. [ABSTRACT FROM AUTHOR]

In this work, we investigate the temperature dependence of the perpendicular electrical conductivity in presence of magnetic field of InSb sample measurements obtained by Abboudy [16]. First we determine the value of the critical magnetic field BC for which the metal insulator transition (MIT) occurs. On the metallic side of the MIT, we are interested in the study of positive magnetoconductivity as a function of magnetic field by modeling it with complex theoretical models. The validity of these models is tested by calculating and comparing the inelastic scattering time τ ε for each model used. [ABSTRACT FROM AUTHOR]

Binary semiconductors are one of the nominee materials for the manufacture of third-generation infrared photon detectors and ICs with ultra-high speed and ultralow power consumption. In this work, we present the electronic properties of IV-IV (SiC) and III-V (GaSb, InSb) semiconductors in Zinc-blend (ZB), Rocksalt (RS), and Wurtzite (WZ) Phases and the structural Phase transition using first principle. Our result shows that SiC, GaSb and InSb crystallize as metals in the RS Phase but as semiconductors in the ZB (WZ) Phases with an energy gap of 1.30 eV (2.26 eV), 0.23 eV (0.14 eV) and 0.17 e V (0.21 eV) respectively; indicating that both GaSb and InSb are narrow bandgap semiconductors while SiC is a wide bandgap semiconductor. These results are in good agreement with other theoretical and experimental reports. A phase transition from ZB - RS and from WZ - RS phases is observed at a pressure of 9.72 GPa (7.65 GPa), 72.4 GPa (72.4 GPa) and 8.063 Gpa (8.063 Gpa) for InSb, SiC and GaSb respectively. This shows that under high pressure, the materials undergo a transition from the semiconducting (ZB or WZ) Phase to the metallic (RS) Phase. [ABSTRACT FROM AUTHOR]

Abstract Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, that is, strong spin‐orbit interaction and large Landé g‐factor. Integrating InSb nanowires with other materials could potentially unfold novel devices with distinctive functionality. A prominent example is the combination of InSb nanowires with superconductors for the emerging topological particles research. Here, the combination of the II–VI cadmium telluride (CdTe) with the III–V InSb in the form of core–shell (InSb–CdTe) nanowires is investigated and potential applications based on the electronic structure of the InSb–CdTe interface and the epitaxy of CdTe on the InSb nanowires are explored. The electronic structure of the InSb–CdTe interface using density functional theory is determined and a type‐I band alignment is extracted with a small conduction band offset ( ⩽0.3 eV). These results indicate the potential application of these shells for surface passivation or as tunnel barriers in combination with superconductors. In terms of structural quality, it is demonstrated that the lattice‐matched CdTe can be grown epitaxially on the InSb nanowires without interfacial strain or defects. These shells do not introduce disorder to the InSb nanowires as indicated by the comparable field‐effect mobility measured for both uncapped and CdTe‐capped nanowires.

In this paper, a one-dimensional photonic structure is proposed for the realization of double Fano resonance (DFaR), which can be tuned by an external magnetic field and temperature. The designed photonic structure is composed of a Fabry-Perot cavity based on semiconductor material indium antimonide (InSb) and a sequence of general photonic crystals. A single Fano resonance (SFaR) is generated by the Fabry-Perot cavity, and the ordinary photonic crystals added to the back of the Fabry-Perot cavity offer a continuous transmission spectrum as a continuous state. The appearance of DFaR is ascribed to the interference phenomenon between SFaR and the continuous state. The effect of different parameters on Fano resonance was simulated by the transfer matrix method. The simulation results show that the interaction of the SFaR with the continuum spectrum leads to a new Fano resonance (NFaR) with a higher quality factor. Furthermore, DFaR can have the function of multi-physics tuning, controlled by the external magnetic field and temperature for the amplitude and frequency point of transmittance due to the introduction of InSb material. Based on the characteristics of DFaR, these obtained results can provide ideas for designing multi-measuring optical filters, lasers, slow light devices, and multi-node optical switches.

Two methods of back thinning of an InSb(100) matrix module using abrasive and non-abrasive polishing are compared by various analytical methods. It is shown that an extra stage of mechanical grinding allows one to achieve a significant improvement in the geometry of the matrix module after finishing polishing in comparison with a non-abrasive technique. The arithmetic mean of the surface roughness after all stages of processing does not exceed the permissible values. The degree of influence of various processing methods on the crystal structure of the material is estimated by reciprocal space maps. [ABSTRACT FROM AUTHOR]