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The electron-impact ionization of water molecules at low impact energies is investigated using a theoretical approach named M3CWZ. In this model, which considers exchange effects and post-collision interaction, the continuum electrons (incident, scattered, and ejected) are all described by a Coulomb wave that corresponds to distance-dependent charges generated from the molecular target properties. Triple differential cross-sections for low impact energy ionization of either the 1b1 or 3a1 orbitals are calculated for several geometrical and kinematical configurations, all in the dipole regime. The M3CWZ model is thoroughly tested with an extensive comparison with available theoretical results and COLTRIMS measurements performed at projectile energies of Ei = 81 eV [Ren et al., Phys. Rev. A 95, 022701 (2017)] and Ei = 65 eV [Zhou et al., Phys. Rev. A 104, 012817 (2021)]. Similar to other theoretical models, an overall good agreement with both sets of measured data is observed for the angular distributions. Our calculated cross-sections' magnitudes are also satisfactory when compared to the other theoretical results, as well as to the cross-normalized relative scale data at 81 eV impact energy. The 65 eV set of data, measured on an absolute scale, offers a further challenging task for theoretical descriptions, and globally the M3CWZ performs fairly well and comparably to other theories. The proposed approach with variable charges somehow allows to capture the main multicenter distortion effects while avoiding high computational costs. [ABSTRACT FROM AUTHOR]

In ultrawide bandgap (UWBG) nitride and oxide semiconductors, increased bandgap (Eg) correlates with greater ionicity and strong electron–phonon coupling. This limits mobility through phonon scattering, localizes carriers via polarons and self-trapping, broadens optical transitions via dynamic disorder, and modifies the breakdown field. Herein, we use polarized optical transmission spectroscopy from 77 to 633 K to investigate the Urbach energy (Eu) for many orientations of Fe- and Sn-doped β-Ga2O3 bulk crystals. We find Eu values ranging from 60 to 140 meV at 293 K and that static (structural defects plus zero-point phonons) disorder contributes more to Eu than dynamic (finite temperature phonon-induced) disorder. This is evidenced by lack of systematic Eu anisotropy, and Eu correlating more with x-ray diffraction rocking-curve broadening than with Sn-doping. The lowest measured Eu are ∼10× larger than for traditional semiconductors, pointing out that band tail effects need to be carefully considered in these materials for high field electronics. We demonstrate that, because optical transmission through thick samples is sensitive to sub-gap absorption, the commonly used Tauc extraction of a bandgap from transmission through Ga2O3 >1–3 μm thick is subject to errors. Combining our Eu(T) from Fe-doped samples with Eg(T) from ellipsometry, we extract a measure of an effective electron–phonon coupling that increases in weighted second order deformation potential with temperature and a larger value for E||b than E||c. The large electron–phonon coupling in β-Ga2O3 suggests that theories of electrical breakdown for traditional semiconductors need expansion to account not just for lower scattering time but also for impact ionization thresholds fluctuating in both time and space. [ABSTRACT FROM AUTHOR]

In this paper, the study of the homogeneous resistivity and two‐layer soil influences on the performance of the electrodes of grounding systems subjected to lightning strikes is carried out considering soil ionization. The study is done on the behaviour of the ground electrodes while the resistivity of the soil is altered from small to high value in the case of homogeneous soil, while the study is obtained on two‐layer soils in the case of diverse values of the reflection factor. In the suggested algorithm for two‐layer soils, each layer has its resistivity and dielectric constant, where the dielectric constant and soil resistivity depend on the lightning frequency. The field resulting from lightning strikes, which causes soil ionization, has been studied, and the results have been used to understand the behaviour of ground rods under the influence of lightning strikes. The credibility of the results has been strengthened by comparing it with what others have obtained recently. The article's novelty can be summarized in the investigation of the performance of the electrodes of grounding grids that are installed in high soil resistivity of uniform and two‐layer soils containing the impacts of soil ionization, lightning frequency, soil resistivity, and permittivity variations. [ABSTRACT FROM AUTHOR]

Hollow ion X-ray emission is of great interest in high-energy-density research, since negligible opacity allows studies from the interior of very dense objects. In this paper, ionization potential depressions of the isoelectronic sequences for single and double K-shell vacancies are obtained from a pure ab initio multiconfiguration Hartree–Fock simulation including exact exchange terms and finite temperature dense plasma effects. It is demonstrated that the simultaneous representation of these ab initio data in the form of a map of hollow ion X-ray transition energies enables identification of important steps in the matter evolution and ionization dynamics. Mapping along the isoelectronic sequence as a function of the pumping energy of a X-ray free electron laser also enables visualization of the impact of ionization potential depression on the pathways of hollow ion formation. [ABSTRACT FROM AUTHOR]

Impact ionization effect has been demonstrated in transistors to enable sub-60 mV dec−1 subthreshold swing. However, traditionally, impact ionization in silicon devices requires a high operation voltage due to limited electrical field near the device drain, contradicting the low energy operation purpose. Here, we report a vertical subthreshold swing device composed of a graphene/silicon heterojunction drain and a silicon channel. This structure creates a low voltage avalanche impact ionization phenomenon and leads to steep switching of the silicon-based device. Experimental measurements reveal a small average subthreshold swing of 16 µV dec−1 over 6 decades of drain current and nearly hysteresis-free, and the operating voltage at which a vertical subthreshold swing occurs can be as low as 0.4 V at room temperature. Furthermore, a complementary silicon-based logic inverter is experimentally demonstrated to reach a voltage gain of 311 at a supply voltage of 2 V. Yuan et al. report a nearly vertical subthreshold swing field-effect transistor consists of a graphene/silicon heterojunction drain and a silicon channel. The device enables nearly hysteresis-free transistors with subthreshold swing of 16 µV dec−1, and a complementary logic inverter with gain of 311. [ABSTRACT FROM AUTHOR]

For the past few decades, metal–oxide–semiconductor field-effect transistors (MOSFETs) have been the most important application in IC circuits. In certain circuit applications, the breakdown voltage and specific on-resistance serve as key electrical parameters. This article introduces a readily accessible approach to enhance the source–drain breakdown voltage (BVDS) of MOSFETs based on the Bipolar-CMOS-DMOS (BCD) platform without extra costs. By attentively refining the process steps and intricacies of the doping procedures, the breakdown voltages of NMOS and PMOS experienced increments of 3.4 V and 4.6 V, translating to enhancements of 31.5% and 50.3%. Parallel simulations offer insightful mechanistic explanations through simulation tools, facilitating superior outcomes. This initiative lays significant groundwork for the advancement of a comprehensive BCD process development framework. [ABSTRACT FROM AUTHOR]

In this study, two new structures are proposed for reverse-conducting insulated gate bipolar transistors (RC-IGBT) that effectively prevent snapback by relocating the N-collectors and utilizing silicon–germanium in the collector region of each device. The forward mode of the proposed structures shows IC− VC characteristics without snapback, since the position of the N-collector is changed to prevent electron extraction. In the reverse mode, the silicon–germanium induces currents through tunneling and impacts the ionization mechanisms. Importantly, the proposed structures generate a stable current value even if there are errors in the length of the N-collector during ion implantation, which enhances the reliability of the device. In addition, the proposed structures exhibit similar values for the breakdown voltage at around 700 V and the turn-on and turn-off losses when compared to the conventional RC-IGBT. Thus, this paper improves the reliability of RC-IGBTs by mitigating the snapback effect while maintaining their unique electrical properties. [ABSTRACT FROM AUTHOR]

The gain in short-wave infrared and mid-wave infrared HgCdTe avalanche photodiodes (APDs) with large diameters has been analyzed using an already established model based on an empirical expression proposed by Okuto–Crowell (OC) and a new model derived for the impact ionization in HgCdTe. This model is based on a simplified but physical description of the carrier dynamics during the multiplication. It is shown that OC model has limitations in giving a precise description of the measured avalanche gains, and that is difficult, in view of present available data, to derive a universal expression for the model parameters to predict the avalanche gain in HgCdTe APDs as a function of the Cd composition, operating temperature, and multiplication layer geometry. The new model is shown to give a better fit of the gain data, associated with a scaling of the model parameters with the band gap. [ABSTRACT FROM AUTHOR]

We explore a mechanism for ionization in high-velocity (but not yet relativistic) collisions of light atomic particles, one of which being initially in an excited internal state. This mechanism is driven by the generalized Breit interaction and proceeds via radiative energy transport between the colliding particles which has an extremely long range. A comparison of this mechanism with those which are 'standard' for high-velocity collisions shows that it can play a noticeable role in collisions with excited target atoms. [ABSTRACT FROM AUTHOR]

Polypropylene (PP) is regarded as a recyclable material for high-voltage direct current (HVDC) cable insulation due to its high melting point and electrical resistivity. This work focuses on the effect of the β-nucleating agent content on the electrical tree growth characteristics in isotactic PP (iPP) insulation. The results demonstrate that adding β-nucleating agents promotes the growth of β-crystals while limiting the α-crystal content. The crystallinity improves with the reduction in the average size of spherulites due to the addition of a β-nucleating agent with 0.1 wt% content. Electrical tree experiments show that the electrical tree growth rate declines as the nucleating agent content rises from 0 to 0.1 wt%. Meanwhile, the expansion coefficient increases with higher nucleating agent content. Continuous increases in the nucleate agent content result in the upward growth rate of electrical trees. When the nucleating agent content is below 0.1 wt%, the α–β-crystal interface introduced by the agent suppresses carrier migration and limits impact ionization, leading to the slower growth rate of the electrical tree. Further addition of the nucleate agent induces a β–β-crystal interface with weak coupling in carriers. It is concluded that β-nucleating agent-modified PP with 0.1 wt% content has potential application in HVDC cable insulation. [ABSTRACT FROM AUTHOR]

This study explores the dynamics of charge transport within a cryogenic P-type Ge particle detector, fabricated from a crystal cultivated at the University of South Dakota. By subjecting the detector to cryogenic temperatures and an Am-241 source, we observe evolving charge dynamics and the emergence of cluster dipole states, leading to the impact ionization process at 40 mK. Our analysis focuses on crucial parameters: the zero-field cross-section of cluster dipole states and the binding energy of these states. For the Ge detector in our investigation, the zero-field cross-section of cluster dipole states is determined to be 8.45 × 10−11 ± 4.22 × 10−12 cm2. Examination of the binding energy associated with cluster dipole states, formed by charge trapping onto dipole states during the freeze-out process, reveals a value of 0.034 ± 0.0017 meV. These findings shed light on the intricate charge states influenced by the interplay of temperature and electric field, with potential implications for the sensitivity in detecting low-mass dark matter. [ABSTRACT FROM AUTHOR]

In this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its resistance to single event transient (SET) effects while also overcoming the degradation of other characteristics. The device operation mechanism and characteristics are investigated by TCAD simulation. The results show that the peak electric field and impact ionization at the gate edges are reduced in the PN-HEMT due to the introduced P-GaN buried layer in the buffer layer. This leads to a decrease in the peak drain current (Ipeak) induced by the SET effect and an improvement in the breakdown voltage (BV). Additionally, the locally doped barrier layer provides extra electrons to the channel, resulting in higher saturated drain current (ID,sat) and maximum transconductance (gmax). The Ipeak of the PN-HEMT (1.37 A/mm) is 71.8% lower than that of the conventional AlGaN/GaN HEMT (C-HEMT) (4.85 A/mm) at 0.6 pC/µm. Simultaneously, ID,sat and BV are increased by 21.2% and 63.9%, respectively. Therefore, the PN-HEMT enhances the hardened SET effect of the device without sacrificing other key characteristics of the AlGaN/GaN HEMT. [ABSTRACT FROM AUTHOR]

Ultraviolet (UV) photodetectors have gained much attention due to their numerous important applications ranging from environmental monitoring to space communication. To date, most p‐NiO/n‐Si heterojunction photodetectors (HPDs) exhibit poor UV responsivity and slow response. This is mainly due to a small valence band offset (ΔEV) at the NiO/Si interface and a high density of dangling bonds at the silicon surface. Herein, an UV HPD consisting of NiO/Al2O3/n‐Si is fabricated using magnetron sputtering technique. The HPD has a large rectification ratio of 2.4 × 105. It also exhibits excellent UV responsivity (R) of 15.8 A/W at −5 V and and detectivity (D*) of 1.14 × 1013 Jones at −4 V, respectively. The excellent performance of the HPD can be attributed to the defect passivation at the interfaces of the heterojunction and the efficient separation of photogenerated carriers by the Al2O3 nanolayer. The external quantum efficiency (EQE) of the HPD as high as 5.4 × 103%, hence implying a large optical gain due to carrier proliferation resulting from impact ionization. Furthermore, the ultrafast response speed with a rise time of 80 µs and a decay time of 184 µs are obtained. [ABSTRACT FROM AUTHOR]

Astrobiology studies are a top priority in answering one of the most fundamental questions in planetary science: Is there life beyond Earth? Saturns icy moon Enceladus is a prime target in the search for life in our solar system, identified by NASA as the second-highest priority site for a flagship mission in the next decade. The orbital sampling technique of impact ionization mass spectrometry indicated the presence of complex organics in the small icy plume particles ejected by Enceladus encountered previously by Cassini. However, high interaction velocities caused ambiguity as to the origin and identity of the organics. Laboratory validation of this technique is needed to show that biosignature molecules can survive an impact at hypervelocity speeds for detection. Here, we present results on the hypervelocity impact of organic-laden submicron ice grains for in situ mass spectrometric characterization with the first technique to accurately replicate this plume sampling scenario: the Hypervelocity Ice Grain Impact Mass Spectrometer. Our results show good agreement with Cassini data at comparable compositions. We show that amino acids entrained in ice grains can be detected intact after impact at speeds up to 4.2 km/s and that salt reduces their detectability, validating the predictions from other model systems. Our results provide a benchmark for this orbital sampling method to successfully detect signs of life and for the interpretation of past and future data. This work has implications not only for a potential Enceladus mission but also for the forthcoming Europa Clipper mission.

We report new data on the temperature coefficient of the avalanche breakdown voltage (BV) in 4H-SiC devices. We compare avalanche in different device types (MOSFETs/Schottky diodes), different measurement types [ I d (V d) -sweeps and unclamped inductive switching stress], and avalanche directions (vertical and lateral) for a wide range of avalanche voltages. We fit the measured B V (T) -curves to the one-sided abrupt junction model and extract values for the temperature coefficients of impact ionization coefficients in their Chynoweth and Thornber forms for both holes and electrons. [ABSTRACT FROM AUTHOR]

Impact ionization originated by the buffer leakage current, together with high electric fields ( > 3 MV cm−1) at the anode corner of the isolating trenches, has been identified as the failure mechanism of shaped planar GaN Gunn diodes when biased above 20 V, so that no evidence of Gunn oscillations in fabricated devices has been observed yet. In order to avoid the avalanche, we propose the addition of a Schottky substrate terminal, which, by means of Monte Carlo simulations, has been confirmed to be able to suppress such not-desired leakage current when applying a negative substrate bias. When the substrate bias is positive, impact ionization is also reduced due to the lower electric field at the hotspot, but a vertical cathode-substrate current degrades the device operation. In order to avoid such current, we propose the use a MIS configuration for the substrate contact, which is the optimal solution. [ABSTRACT FROM AUTHOR]

We have proposed leaky integrate-and-fire (LIF) neuron having low-energy consumption and tunable functionality without external circuit components. Our LIF neuron has a simple configuration consisting of only three components: one bandgap-engineered resistive switching transistor (BE-RST), one capacitor, and one resistor. Here, the crucial point is that BE-RST with a silicon–germanium heterojunction possesses an amplified hysteric current switching with a low latch-up voltage due to improved hole storage capability and impact ionization coefficient. Therefore, the proposed neuron utilizing BE-RST requires an energy consumption of 0.36 pJ/spike, which is approximately six times lower than 2.08 pJ/spike of pure silicon-RST based neuron. In addition, the spiking properties can be tuned by modulating the leakage rate and threshold through gate bias, which contributes to energy-efficient sparse-activity and high learning accuracy. As a result, our proposed neuron can be a promising candidate for executing various spiking neural network applications. [ABSTRACT FROM AUTHOR]

Low Gain Avalanche Diodes (LGADs) are silicon sensors designed to achieve an internal gain in the order of 10 through the impact ionization process. The development of LGADs was pushed forward by their application in High Energy Physics (HEP) experiments, where they will be employed to provide measurements of the time of arrival of minimum ionizing particles with a resolution of around 30 ps. The initial technological implementation of the sensors constrains their minimum channel size to be larger than 1 mm², in order to reduce inefficiencies due to the segmentation of the gain structure. The gain of the sensors is kept in the order of 10 to limit the sensor shot noise and their power consumption. In photon science, the gain provided by the sensor can boost the signal-to-noise ratio of the detector system, effectively reducing the x-ray energy threshold of photon counting detectors and the minimum x-ray energy where single photon resolution is achieved in charge integrating detectors. This can improve the hybrid pixel and strip detectors for soft and tender x-rays by simply changing the sensor element of the detector system. Photon science applications in the soft and tender energy range require improvements over the LGADs developed for HEP, in particular the presence of a thin entrance window to provide a satisfactory quantum efficiency and channel size with a pitch of less than 100 µm. In this review, the fundamental aspects of the LGAD technology are presented, discussing also the ongoing and future developments that are of interest for photon science applications. [ABSTRACT FROM AUTHOR]

The paper presents the results of a theoretical study of the electron- impact ionization of the 6p, 6s, and 5d shells of the Pb and Bi atoms. Calculations are performed using three relativistic approximations, namely distorted waves, Coulomb-Born, and binary-encounter-dipole, in a wide range of collision energies from thresholds to 700 eV. The ionization cross sections of the sub valent 5d shell of the Pb and Bi atoms are calculated for the first time. It is established that this shell contributes to the total direct ionization cross section twice as much as the 6s shell (up to 26% for Pb and up to 38% for Bi), which shows the importance of taking this process into account in modeling different types of plasma. We analyzed the behavior of the partial ionization cross sections of these atoms calculated using various approximations. Comparison of the resultant full direct ionization cross sections with the data of other authors shows that they satisfactorily describe the process of direct ionization. However, for a more detailed analysis and comparison with experimental data additional calculations of the main process of indirect ionization, namely excitation of autoionization, for the Pb and Bi atoms are required. Analysis of the influence of the third valence electron of the Bi atom compared to the Pb atom on the core-valence interaction shows that this influence is the most significant in the case of the distorted waves approximation. The difference in the behavior of the direct ionization cross sections is caused, in our opinion, by the interaction of valence electrons among themselves. [ABSTRACT FROM AUTHOR]

Glycans, carbohydrates, and glycoconjugates are involved in many crucial biological processes, such as disease development, immune responses, and cell–cell recognition. Glycans and carbohydrates are known for the large number of isomeric features associated with their structures, making analysis challenging compared with other biomolecules. Mass spectrometry has become the primary method of structural characterization for carbohydrates, glycans, and glycoconjugates. Metal adduction is especially important for the mass spectrometric analysis of carbohydrates and glycans. Metal‐ion adduction to carbohydrates and glycoconjugates affects ion formation and the three‐dimensional, gas‐phase structures. Herein, we discuss how metal‐ion adduction impacts ionization, ion mobility, ion activation and dissociation, and hydrogen/deuterium exchange for carbohydrates and glycoconjugates. We also compare the use of different metals for these various techniques and highlight the value in using metals as charge carriers for these analyses. Finally, we provide recommendations for selecting a metal for analysis of carbohydrate adducts and describe areas for continued research. [ABSTRACT FROM AUTHOR]

To enhance the electrical safe operation area (eSOA) of laterally diffused metal oxide semiconductor (LDMOS) transistors, a novel reduced surface electric field (Resurf) structure in the n-drift region is proposed, which was fabricated by ion implantation at the surface of the LDMOS drift region and by drift region dimension optimization. Technology computer-aided design (TCAD) simulations show that the optimal value of Resurf ion implantation dose 1 × 1012 cm−2 can reduce the surface electric field in the n-drift region effectively, thereby improving the ON-state breakdown voltage of the device (BVon). In addition, the extended n-drift region length of the Ld design also improves device BVon significantly, and is aimed at reducing the current density and the electric field, and eventually suppressing the n-drift region impact ionization. The results show that the novel 60 V nLDMOS has a competitive BVon performance of 106.9 V, which is about 20% higher than that of the conventional one. Meanwhile, the OFF-state breakdown voltage of the device (BVoff) of 88.4 V and the specific ON-resistance (RON,sp) of 129.7 mΩ⋅mm2 exhibit only a slight sacrifice. [ABSTRACT FROM AUTHOR]

The avalanche multiplication and noise characteristics of Al0.55Ga0.45As0.56Sb0.44p–i–n and n–i–p structures grown lattice matched on InP have been investigated. From measurements undertaken using 530 nm illumination on several devices, the electron (α) and hole (β) impact ionization coefficients have been determined. While α only shows a relatively small increase compared to the higher Al composition alloys of AlxGa1−xAsSb, β is found to increase significantly. Although the β/α ratio is increased to ∼0.125–0.2, higher than the ∼0.003–0.02 seen in the higher-Al alloys, a relatively low excess noise factor of 2.2 was measured in the p-i-n with electron-initiated multiplication of 20. This noise performance is significantly lower than that predicted using a local-field model and comparable to some commercial silicon APDs. This avalanching material with a bandgap of ∼1.24 eV will have the advantages of a smaller band discontinuity with the absorber region and should also operate at a lower voltage. [ABSTRACT FROM AUTHOR]

The Cassini mission provided evidence for a global subsurface ocean and ongoing hydrothermal activity on Enceladus, based on results from Cassini's mass spectrometers. Laboratory simulations of hydrothermal conditions on icy moons are needed to further constrain the composition of ejected ice grains containing hydrothermally altered organic material. Here, we present results from our newly established facility to simulate the processing of ocean material within the temperature range 80–150°C and the pressure range 80–130 bar, representing conditions suggested for the water–rock interface on Enceladus. With this new facility, we investigate the hydrothermal processing of triglycine (GGG) peptide and, for the first time, analyse the extracted samples using laser-induced liquid beam ion desorption (LILBID) mass spectrometry, a laboratory analogue for impact ionization mass spectrometry of ice grains in space. We outline an approach to elucidate hydrothermally processed GGG in ice grains ejected from icy moons based on characteristic differences between GGG anion and cation mass spectra. These differences are linked to hydrothermal processing and thus provide a fingerprint of hydrothermal activity on extraterrestrial bodies. These results will serve as important guidelines for biosignatures potentially obtained by a future Enceladus mission and the SUrface Dust Analyzer (SUDA) instrument onboard Europa Clipper. This article is part of the theme issue 'Dust in the Solar System and beyond'. [ABSTRACT FROM AUTHOR]

The DESTINY+(Demonstration and Experiment of Space Technology for INterplanetary voYage with Phaethon fLyby and dUst Science) Dust Analyser (DDA) is a state-of-the-art dust telescope for the in situ analysis of cosmic dust particles. As the primary scientific payload of the DESTINY+ mission, it serves the purpose of characterizing the dust environment within the Earth–Moon system, investigating interplanetary and interstellar dust populations at 1 AU from the Sun and studying the dust cloud enveloping the asteroid (3200) Phaethon. DDA features a two-axis pointing platform for increasing the accessible fraction of the sky. The instrument combines a trajectory sensor with an impact ionization time-of-flight mass spectrometer, enabling the correlation of dynamical, physical and compositional properties for individual dust grains. For each dust measurement, a set of nine signals provides the surface charge, particle size, velocity vector, as well as the atomic, molecular and isotopic composition of the dust grain. With its capabilities, DDA is a key asset in advancing our understanding of the cosmic dust populations present along the orbit of DESTINY+. In addition to providing the scientific context, we are presenting an overview of the instrument's design and functionality, showing first laboratory measurements and giving insights into the observation planning. This article is part of a theme issue 'Dust in the Solar System and beyond'. [ABSTRACT FROM AUTHOR]

The Ulysses spacecraft was launched in 1990 and, after a Jupiter swing-by in 1992, became the first interplanetary spacecraft orbiting the Sun on a highly inclined trajectory with an inclination of 79∘. The spacecraft was equipped with an impact ionization dust detector which provided 17 years of in situ dust measurements in interplanetary space from 1990 to 2007. Cometary meteoroid streams (also referred to as trails) exist along the orbits of comets, forming fine structures of the interplanetary dust cloud. We use the Interplanetary Meteoroid Environment for eXploration (IMEX) dust streams in space model (Soja RH et al. 2015 Characteristics of the dust trail of 67P/Churyumov-Gerasimenko: an application of the IMEX model. Astron. Astrophys.583, A18. (doi:10.1051/0004-6361/201526184)) to predict cometary stream traverses by Ulysses and re-analyse the Ulysses dust dataset in order to identify impacts of cometary stream particles detected during such trail traverses. We identify 19 particles compatible with three Ulysses trail traverses on 12 March 1995, 25–27 April 2001 and 16–19 May 2001. The particle origin is compatible with up to five comets, i.e. 10P/Tempel 2, 146P/Shoemaker-LINEAR, 267P/LONEOS and possibly 45P/Honda-Mrkos-Pajdušáková and P/1999 RO28 (LONEOS). We find a dust spatial density in these trails of approximately 2−7⋅10−8m−3. The radii of the detected cometary stream particles derived from the dust instrument calibration are in the micrometre range. The in situ analysis of meteoroid trail particles in space, which can be traced back to their source bodies, opens a new opportunity for remote compositional analysis of comets and asteroids without the necessity to send a spacecraft to or even land on these celestial bodies, opening new opportunities for future space missions equipped with in situ dust analyzers. This article is part of the theme issue 'Dust in the Solar System and beyond'. [ABSTRACT FROM AUTHOR]

Impacts of spatial charge inhomogeneities on carrier transport fluctuations and premature breakdown were investigated in Schottky ampere-class Ga2O3 power diodes. Three prominent electron traps were detected in Ga2O3 epilayers by a combination of the depth-resolved capacitance spectroscopy profiling and gradual dry etching. The near-surface trap occurring at 1.06 eV below the conduction band minimum (EC), named E3, was found to be confined within a 180 nm surface region of the Ga2O3 epilayers. Two bulk traps at EC − 0.75 eV (E2*) and at EC − 0.82 eV (E2) were identified and interconnected with the VGa- and FeGa-type defects, respectively. In the framework of the impact ionization model, employing the experimental trap parameters, the TCAD simulated breakdown characteristics matched the experimental breakdown properties well, consistently with inverse proportionality to the total trap densities. In particular, the shallowest distributed E3 trap with the deepest level is responsible for higher leakage and premature breakdown. In contrast, Ga2O3 Schottky diodes without E3 trap exhibit enhanced breakdown voltages, and the leakage mechanism evolves from variable range hopping at medium reverse voltages, to the space-charge-limited conduction at high reverse biases. This work bridges the fundamental gap between spatial charge inhomogeneities and diode breakdown features, paving the way for more reliable defect engineering in high-performance Ga2O3 power devices. [ABSTRACT FROM AUTHOR]

We propose a broadband noise test method (10 Hz–1 MHz) using a direct power method to measure the excess noise of InGaAs/InP avalanche photodiodes (APDs) with a separate absorption, grading, charge, and multiplication structure. By this means, the impact ionization coefficient ratio (the k value) can be accurately determined. Compared with previous studies, this method can distinguish between low-frequency noise and excess noise, so for an appropriate high frequency spectral range, the excess noise can be analyzed without mixing in other noise information. Three different APDs fabricated in-house with different diameters (12, 25, and 60 µm) were investigated using the above-mentioned method under temperatures varying from −10 to −40 °C. Our findings showed that the k value of the APDs decreased as the temperature decreased. When the temperature decreased to −40 °C, the k value of the 12, 25, and 60 µm diameter diodes was as low as 0.1, 0.3, and 0.2, respectively. The measurement results are consistent with our device design and not only provide useful information for the future selection of device materials and structures but also demonstrate the feasibility of the broadband noise measurement method in the accurate determination of the k value. It indicates that low excess noise can be achieved by utilizing the temperature dependence of k. [ABSTRACT FROM AUTHOR]

Space‐based observations of the signatures associated with STEVE show how this phenomenon might be closely related to an extreme version of a SAID channel. Measurements show high velocities (>4 km/s), high temperatures (>4,000 K), and very large current density drivers (up to 1 μA/m2). This phenomena happens in a small range of latitudes, less than a degree, but with a large longitudinal span. In this study, we utilize the GEMINI model to simulate an extreme SAID/STEVE. We assume a FAC density coming from the magnetosphere as the main driver, allowing all other parameters to adjust accordingly. We have two main objectives with this work: show how an extreme SAID can have velocity values comparable or larger than the ones measured under STEVE, and to display the limitations and missing physics that arise due to the extreme values of temperature and velocity. Changes had to be made to GEMINI due to the extreme conditions, particularly some neutral‐collision frequencies. The importance of the temperature threshold at which some collision frequencies go outside their respective bounds, as well as significance of the energies that would cause inelastic collisions and impact ionization are displayed and discussed. We illustrate complex structures and behaviors, emphasizing the importance of 3D simulations in capturing these phenomena. Longitudinal structure is emphasized, as the channel develops differently depending on MLT. However, these simulations should be viewed as approximations due to the limited observations available to constrain the model inputs and the assumptions made to achieve sensible results. Key Points: We present a full 4D (3D + time) simulation of an extreme SAIDWe utilize the GEMINI model for the simulation due to the practicality and easiness to set arbitrary input files. Though challenges remainWe highlight the importance of inelastic collisions and impact ionization on damping the channel velocity, physics not included in GEMINI [ABSTRACT FROM AUTHOR]

In this paper, we study the ionization‐recombination processes in the lower ionosphere during solar flares of various classes in June 2014 and September 2017. For the first time, ionization and recombination rates of the ionospheric D‐region were estimated using the experimental data on variations in the amplitude and phase characteristics of very low frequencies (VLF) signals and two‐channel data from the GOES satellite (0.05–0.4 nm and 0.1–0.8 nm). The empirical two‐parameter Wait‐Ferguson model was used to calculate temporal changes in the electron concentration Ne during solar flares of different classes. GOES satellite data and black body model were used to estimate the X‐ray fluxes in the wavelength spectral range λ ≤ 0.3 nm. Joint analysis of the temporal evolution of the Ne vertical profile in the lower ionosphere and X‐ray fluxes in different wavelength ranges was carried out. As a result, the values of the ionization and recombination rate coefficients were obtained, and the spectral ranges of radiation that have the greatest impact on Ne at given heights were determined. Calculated ionization and recombination rate coefficients and ranges were successfully verified using VLF data during different solar flares. The results obtained in this work can be used in future studies for a more accurate assessment of the response of lower ionosphere to solar flares of various classes. Plain Language Summary: Solar flares have a significant impact on the state and dynamics of the lower ionosphere and, as a consequence, on the conditions for the radio waves propagation in a wide frequency range. Changes occurring in the ionospheric D‐region are mainly due to variations in the amplitude and phase of VLF‐signals. Analysis of the variation of these parameters together with the X‐ray fluxes recorded by the GOES satellite during solar flares of June 2014 and September 2017 allowed us to study the processes occurring in the ionosphere. In this paper, we empirically estimated the ionization and recombination rates and the spectral ranges of radiation that have the greatest impact on the ionization processes of the lower ionosphere during solar flares. The results obtained can be used in future studies for a more accurate assessment of the response of lower ionosphere to solar flares of various classes. Key Points: VLF signals data and GOES flux data were used to calculate the ionization and recombination rates in the ionospheric D‐regionThe spectral ranges of radiation with the greatest influence on the ionization processes were estimatedObtained values of ionization and recombination rates can be used to estimate time variations of electron concentration during flares [ABSTRACT FROM AUTHOR]

The ion impact multiple ionization and subsequent dissociation of CCl4 is studied using a beam of Ar7+ ion having the energy of about 1 MeV in a linear time- of-flight mass spectrometer, coupled with a position-sensitive detector. The complete, as well as incomplete Coulomb explosion pathways, for CCl 4 2 + and CCl 4 3 + ions are identified and studied. The kinetic energy release distributions of channels, kinetic energies, and momentum distributions of fragmented ions, as well as neutrals, are also calculated. Possible modes of fragmentation pathways, i.e., concerted and/or sequential, for all the identified channels are studied using Newton diagrams, Dalitz plots, and kinetic energy distributions. The dynamical information and fragmentation pathways were analyzed with the Dalitz plot and Newton diagram for the three-body dissociation channel. The nature of the fragmentation process is further investigated with simulated Dalitz plots and Newton diagrams using the simple classical mechanical model. [ABSTRACT FROM AUTHOR]

Gallium oxide ( Ga 2 O 3) attracts considerable technological interest because of its high Baliga's figure-of-merit and high breakdown voltages. As the models for the breakdown behavior of n-doped Ga 2 O 3 that consider soft (barrier lowering) and hard (avalanche effect) breakdowns are still lacking, in this study, we model the breakdown operations in <001> oriented Schottky barrier diodes considering both the soft- and hard-breakdown phenomena. The completion of the impact ionization model of β - Ga 2 O 3 in <001> orientation is proposed by determining the hole impact ionization coefficient, thereby reproducing hard breakdown operations. Moreover, a barrier lowering model is determined for reproducing soft breakdown operations. The outcomes of the proposed modeling investigation are expected to be crucial for predicting the reverse-biased operations of β - Ga 2 O 3 in <001> orientation to facilitate further technological development and applications of Ga 2 O 3. [ABSTRACT FROM AUTHOR]

Theoretical investigations of electron-impact ionisation for carbon dioxide (CO2) in low to intermediate energy ranges are presented. In addition to the energy range, we have estimated triple differential cross-section (TDCS) in coplanar and perpendicular plane geometry. We have calculated the TDCS for electron impact using the modified distorted wave formalism up to the second order. Post-collision interaction effects have also been introduced to describe the collision dynamics accurately. There is a good correlation between the distorted-wave Born approximation results and the experimental results in terms of forward and backward scattering regions. [ABSTRACT FROM AUTHOR]

High voltage (HV) generators are used in multiple industrial and scientific facilities. Recent publications have demonstrated that triggering industrial thyristors (relatively slow switching devices) in overvoltage mode, also called impact ionization mode, significantly enhances their dU/dt and dI/dt characteristics. This novel triggering methodology necessitates the application of substantial overvoltage between the thyristor's anode and cathode, delivered with a swift slew rate exceeding 1 kV/ns. The adoption of compact pulse generators constructed from commercially available off-the-shelf components (COTS) opens up avenues for deploying this technology across various domains, including the implementation of high-speed kicker generators in particle accelerators. In our methodology, we employed commercially available high-voltage SiC MOSFETs along with a custom-designed fast gate driver. This driver was conceptualized based on the recent development of gate boosting techniques, featuring a driving voltage exceeding 600 V. The gate driver for these MOSFETs comprises three key components: a level-shifter with NMOS and PMOS transistors, a compact Marx generator with two avalanche transistors, and a GaN HEMT in a high input and low output impedance configuration. The proposed gate-boosting driver achieves a slew rate exceeding 1 kV/ns for the driving pulse. Furthermore, we demonstrate that with this driver, a  1.7  kV rated SiC MOSFET can produce an output pulse of  1.45  kV and a maximum slew rate of ≈ 2.5  kV/ns. This gate-boosting driver aims to minimize commutation times, achieves a slew rate of over 1 kV/ns, and handle higher loads, making it ideal for impact ionization triggering of industrial thyristors. [ABSTRACT FROM AUTHOR]

Effectively modulating the thermal conductivity of materials is critical for meeting the various requirements of thermal-management devices. In this work, the influence of ionization on the phonon-transport properties of stannous oxide (SnO) was systematically investigated using first-principles calculations combined with the Boltzmann transport equation. The results show that ionization has a positive effect on the thermal conductivity of SnO, and this phenomenon can be further enhanced with increased ionization magnitude. Specifically, it was found that the thermal conductivities of SnO along the x (y) and z directions could be increased by 35%/200% and 65%/300% after the removal of four and eight electrons, respectively, from neutral SnO. The phonon mode information implies that the enhancement of thermal conductivity mainly originates from the suppression of anharmonicity in the ionized SnO. This behavior was further demonstrated by analyzing the root mean square displacement and potential-well structure. More in-depth examination suggested that the enhancement of the thermal conductivity of SnO does not originate from the ionization itself, but from the internal strain in the lattice caused by the ionization. The findings presented in this work elucidate how ionization can impact thermal conductivity, providing theoretical guidance for modulating thermal conductivity at the electron level. [ABSTRACT FROM AUTHOR]

Voltage drop process in power Si diode switched to a conducting state by an impact-ionization wave, which is excited by overvoltage pulse with a subnanosecond rise time, has been investigated. In experiments, a reverse voltage pulse was applied to a diode with a diameter of 6 mm without preliminary reverse bias, which provided the average rate of voltage rise across the diode dU/dt in the range of 1–10 kV/ns. Numerical simulations showed that calculated and experimentally observed voltage waveforms are in good quantitative agreement in the case when an active area of the structure Sa, through which a switching current flows, increases with dU/dt value increasing. It was shown that at dU/dt < 2 kV/ns the active area tends to zero, and at dU/dt > 10 kV/ns it approaches the total area of the structure. Comparison with the results of similar studies shows that the increase in the active area of the structure with the increase in the Sa value does not depend on the material of the structure (silicon and gallium arsenide), the number of layers in the semiconductor structure (diodes and thyristors), and also on the value of the initial bias voltage. [ABSTRACT FROM AUTHOR]

The performance of long-wave infrared (LWIR) = 0.22 HgCdTe avalanche photodiodes (APDs) was presented. The dark currentvoltage characteristics at temperatures 200 K, 230 K, and 300 K were measured and numerically simulated. Theoretical modeling was performed by the numerical Apsys platform (Crosslight). The effects of the tunneling currents and impact ionization in HgCdTe APDs were calculated. Dark currents exhibit peculiar features which were observed experimentally. The proper agreement between the theoretical and experimental characteristics allowed the determination that the material parameters of the absorber were reached. The effect of the multiplication layer profile on the detector characteristics was observed but was found to be insignificant. [ABSTRACT FROM AUTHOR]

The paper studies the mode of sub-nanosecond switching operation of trigatrons with an operating voltage of up to 1 MV. It is shown that the mode of such activation takes place because of the creation of primary volume streamer in the trigatron discharge gap under the action of a strong non-uniform electric field. The streamer occupies the entire gap and has a weak glow brightness. An estimated analytical calculation of the trigatron switching process in 0.3 ns is given. The process of sub-nanosecond breakdown of a trigatron with an operating voltage of up to 1 MV is presented. During the process the impact ionization after the incoming of a control pulse with a front of no more than 4 ns and an amplitude of 70 kV in the trigatron occurs along the entire length of the discharge gap of down to 12 mm: between the control electrode and opposing main one as well as between the control electrode and the main one covering it. The experimental data on the increase in the brightness of the discharge glow in the trigatron already after the end of the switching process are given. [ABSTRACT FROM AUTHOR]

A novel structure of a silicon carbide (SiC) double-trench metal oxide semiconductor field-effect transistor (DTMOSFET) is proposed using a hafnium silicate (HfSiOx) dielectric combined with PN pillars. Moreover, it has been characterized using Atlas TCAD Silvaco 2D simulations, and offers a very high breakdown voltage of 4879 V, which is due to the PN pillars under the N-drift layer altering the electric field distribution and HfSiOx dielectric that diminishes the impact ionization. The proposed DTMOSFET achieves a transconductance (gm) and drain current (ID) of 7 mA/mm and 780 µS/mm, respectively. In addition, the simulated results show the cut-off frequency, fT= 1.28 GHz, and maximum frequency, fmax = 10.5 GHz. In addition, the peak electric field observed near the gate edge is 0.93 MV/cm. Moreover, the proposed DTPNH-MOSFET shows 11% improvement in breakdown voltage when compared to the breakdown voltage of conventional DTMOSFET. Therefore, the DTPNH-MOSFET shows a superior performance over other SiC MOSFETs and is a suitable device for future high-power electronics. [ABSTRACT FROM AUTHOR]

Avalanche or carrier-multiplication effect, based on impact ionization processes in semiconductors, has a great potential for enhancing the performance of photodetector and solar cells. However, in practical applications, it suffers from high threshold energy, reducing the advantages of carrier multiplication. Here, we report on a low-threshold avalanche effect in a stepwise WSe2 structure, in which the combination of weak electron-phonon scattering and high electric fields leads to a low-loss carrier acceleration and multiplication. Owing to this effect, the room-temperature threshold energy approaches the fundamental limit, Ethre ≈ Eg, where Eg is the bandgap of the semiconductor. Our findings offer an alternative perspective on the design and fabrication of future avalanche and hot-carrier photovoltaic devices. The avalanche or carrier-multiplication effect has the potential to improve the performance of photodetectors and solar cells, but usually requires high threshold energies. Here, the authors report stepwise WSe2 homojunctions exhibiting threshold energies approaching the semiconductor bandgap at room temperature. [ABSTRACT FROM AUTHOR]

We report the direct observation of radio-frequency negative differential resistance, via on-wafer S-parameter measurements, in GaN-based impact ionization avalanche transit time (IMPATT) diodes. Clear signatures of reflection gain are observed from 18.7 to 30.6 GHz. These observations have been made possible by suppressing the reverse leakage current (and thereby parasitic shunt conductance) by optimization of the fabrication process, in conjunction with the use of pulsed measurements to suppress device self-heating. Consistent with avalanche-dominated behavior, the measured DC reverse bias current–voltage measurements show a positive temperature coefficient of breakdown. For the high-frequency on-wafer characterization, pulsed-bias S-parameter measurements with low (0.0067%) duty cycle were used to mitigate thermal effects. The measured avalanche frequency aligns closely with theoretical predictions based on Gilden and Hines' small signal model [Gilden and Hines, IEEE Trans. Electron Devices ED-13(1), 169–175 (1966)], measured impact ionization coefficients [Cao et al., Appl. Phys. Lett. 112(26), 262103 (2018)], and experimental saturation velocity measurements [Bajaj et al., Appl. Phys. Lett. 107(15), 153504 (2015)]; this excellent agreement confirms IMPATT operation and provides insights needed to further optimize device performance. [ABSTRACT FROM AUTHOR]

The cosmological 21-cm signal offers a potential probe of the early Universe and the first ionizing sources. Current experiments probe the spatially dependent variance (Gaussianity) of the signal through the power spectrum (PS). The signal, however, is expected to be highly non-Gaussian due to the complex topology of reionization and X-ray heating. We investigate the non-Gaussianities of X-ray heating and reionization, by calculating the skew spectrum (SS) of the 21-cm signal using meraxes , which couples a semi-analytic galaxy population with seminumerical reionization simulations. The SS is the cross-spectrum of the quadratic temperature brightness field with itself. We generate a set of seven simulations from z = 30 to 5, varying the halo mass threshold for hosting star formation, the X-ray luminosity per star formation rate, and the minimum X-ray energy escaping host galaxies. We find the SS is predominantly negative as a function of redshift, transitioning to positive towards the start of reionization, and peaking during the mid-point of reionization. We do not see a negative dip in the SS during reionization, likely due to the specifics of modelling ionization sources. We normalize the SS by the PS during reionization isolating the non-Gaussianities. We find a trough (⁠|$k\sim \, 0.1\, \textrm {Mpc}^{-1}$|⁠) and peak (⁠|$k\sim \, 0.4{-}1\, \textrm {Mpc}^{-1}$|⁠) in the normalized SS during the mid-to-late periods of reionization. These correlate to the ionization topology, and neutral islands in the IGM. We calculate the cosmic variance of the normalized SS, and find these features are detectable in the absence of foregrounds with the SKA_LOW. [ABSTRACT FROM AUTHOR]

Modeling plasmas in terms of atoms or ions is theoretically appealing for several reasons. When it is relevant, the notion of atom or ion in a plasma provides us with an interpretation scheme of the plasma's internal functioning. From the standpoint of quantitative estimation of plasma properties, atomic models of plasma allow one to extend many theoretical tools of atomic physics to plasmas. This notably includes the statistical approaches to the detailed accounting for excited states, or the collisional-radiative modeling of non-equilibrium plasmas, which is based on the notion of atomic processes. This paper is focused on the theoretical challenges raised by the atomic modeling of dense, non-ideal plasmas. It is intended to give a synthetic and pedagogical view on the evolution of ideas in the field, with an accent on the theoretical consistency issues, rather than an exhaustive review of models and experimental benchmarks. First we make a brief, non-exhaustive review of atomic models of plasmas, from ideal plasmas to strongly-coupled and pressure-ionized plasmas. We discuss the limitations of these models and pinpoint some open problems in the field of atomic modeling of plasmas. We then address the peculiarities of atomic processes in dense plasmas and point out some specific issues relative to the calculation of their cross-sections. In particular, we discuss the modeling of fluctuations, the accounting for channel mixing and collective phenomena in the photoabsorption, or the impact of pressure ionization on collisional processes. [ABSTRACT FROM AUTHOR]

A random ionization-time model is introduced to compute the avalanche time of double carrier multiplication in heterojunction avalanche photodiodes (APDs). The Monte Carlo method is employed to determine the distribution of carriers for both electron- and hole- initiated multiplications in the GaN/4H–SiC heterojunction APDs of multiplication widths, w = 0.1 and 0.2 μm, incorporating of dead space and hetero-interface effects at high electric field region with respect to time. The carriers that are injected into the GaN layer will undergo multiplication based on material-dependent electron and hole impact ionization coefficients αGaN and βGaN, then cross the heterojunction based on the probability and followed by the multiplication based on material dependent α4H–SiC and β4H–SiC in the 4H–SiC layer. The avalanche time is calculated from the instant the parent carrier enters the multiplication region until all carriers leave the multiplication region. Our model is able to show the distribution of carriers with respect to space and time, inclusive of the presence of secondary carriers due to different groups of feedback carriers and dead time. Due to potential difference at hetero-interface, the avalanche time of the GaN/4H–SiC heterojunction APDs is less than that of the GaN and 4H–SiC homojunction APDs of the same multiplication width; hence, they are good candidates for sensing and switching devices. [ABSTRACT FROM AUTHOR]

We use an ensemble Monte Carlo transport approach to calculate and compare the impact ionization and avalanche photodiode excess noise characteristics in three materials—a band-engineered InAlAs/InAsSb type-II superlattice, bulk InAs, and HgCdTe—all with an identical bandgap of 370 meV at 250 K. The electronic band structures and energy–momentum conservation conditions are used to calculate the impact ionization rates, carrier histories, multiplication gains, and excess noise characteristics. The calculated impact ionization coefficients and excess noise factors indicate a single carrier species multiplication in all three materials under low applied electric fields. We find the ratio of impact ionization coefficients to be k = 7 × 10 − 4 for InAs and 3 × 10 − 4 for HgCdTe under an applied field of 50 kV/cm, and the superlattice to be k < 10 − 6 at fields up to 400 kV/cm. The bulk materials experience avalanche breakdown as the applied field increases, transitioning to Geiger mode behavior at gains above 10 3 for InAs and 10 4 for HgCdTe. However, this breakdown is absent from the superlattice at the highest fields considered in this study due to hole confinement, indicating superior performance compared to the bulk materials. Our results demonstrate the role of superlattice band engineering in designing quality avalanche photodiode materials. [ABSTRACT FROM AUTHOR]

This paper introduces a deep gate lateral double-diffused MOSFET (LDMOS) structure. The proposed LDMOS is a superior impact ionization rate (SIIR-LDMOS) transistor. The primary focus of our research was to reduce the impact ionization rate and improve key performance metrics. To address this, we implemented a modified drift region and optimized layout design. One key aspect of the proposed structure is the inclusion of an N-type area in the drift region, specifically aimed at decreasing the impact ionization rates. By reducing these rates, we were able to effectively control the electric field and enhance the figure of merit. The results of our study demonstrate improvements in breakdown voltage, on-state resistance, figure of merit, and maximum lattice temperature by approximately 54.88%, 20.8%, 209.15%, and 10.09%, respectively. Importantly, we observed that the lattice temperature in the SIIR-LDMOS structure was lower than in the conventional LDMOS transistor. This further supports the advantages of our proposed design. The enhanced figure of merit and breakdown voltage strongly position the SIIR-LDMOS as a promising candidate for future power MOSFETs. [ABSTRACT FROM AUTHOR]

Though the high breakdown electric field of wide-bandgap semiconductors is usually attributed to their large bandgap, the impacts of other band structure parameters and scattering processes on impact ionization phenomena have not been clarified yet. This study computationally analyzes the effects of band structures and scattering rates on the high-field carrier transport properties such as impact ionization coefficients and drift velocity in wide-bandgap semiconductors. For that purpose, this study adopts Monte Carlo simulations in which the E – k dispersion and scattering rates are directly tuned. Simulations with varied band structures indicate that an average of the group velocity in the whole Brillouin zone is a dominant factor determining the impact ionization coefficients rather than the effective mass at the band edge. In addition, the Brillouin zone width has critical impacts when Bloch oscillations occur, which significantly suppress impact ionization. As for scattering mechanisms, the roles of inelastic scattering processes including impact ionization in energy relaxation are discussed. It is also revealed that elastic scattering contributes to energy relaxation processes through transitions of electrons to higher bands. This mechanism leads to the unintuitive positive temperature dependence of impact ionization coefficients when Bloch oscillations occur. These results obtained by the theoretical analyses in this study can serve as basic physical insight to understand the behaviors of impact ionization coefficients in wide-bandgap semiconductors. [ABSTRACT FROM AUTHOR]

We applied hot-carrier extraction to particulate photocatalysts for artificial photosynthetic reactions including water splitting for H2 production and CO2 reduction to CO and HCOOH, and elucidated promising features of hot-carrier photocatalysts (HC-PCs). We designed a specific structure of the HC-PC; a semiconductor core in which thermalization of photo-generated carriers is significantly suppressed is surrounded by a shell whose bandgap is wider than that of the core. Among the photo-generated hot carriers in the core, only carriers whose energies are larger than the shell bandgap are extracted passing through the shell to the active sites on the shell surface. Thus, the shell functions as an energy-selective contact. We calculated the upper bounds of the rates of the carrier supply from the core to the active sites using a newly constructed detailed-balance model including partial thermalization and nonradiative recombination of the carriers. It has been revealed that the HC-PCs can yield higher carrier-supply rates and thus potentially higher solar-to-chemical energy conversion efficiencies for H2 and CO production than those of conventional photocatalysts with the assistance of intraband transition and Auger recombination/impact ionization. It should be noted, however, that one of the necessary conditions for efficient hot-carrier extraction is sufficiently large carrier density in the core, which, in turn, requires concentrated solar illumination by several hundreds. This would raise rate-limiting problems of activities of the chemical reactions induced by the photo-generated carriers and material-transfer properties. [ABSTRACT FROM AUTHOR]

The effect of delayed impact ionization breakdown initiated in a high-voltage Si or GaAs p+nn+ diode by a steep voltage ramp leads to 100 ps avalanche transient from the blocking to conducting state. Here, measurements of the voltage and current dependences in the Si diode exhibiting 100-ps kilovolt switching are presented together with simulations with focus on comparison. Device voltage and current are measured simultaneously and independently in a high-quality matched coaxial circuit. In simulations, we account for wave propagation and reflection processes in the coaxial driving/measuring circuit and for the inhomogeneity of the avalanche switching over the device cross section. This makes quantitative comparison with measurements possible. An agreement in switching time and transient characteristics can be achieved only under the assumption that a smaller part of the cross section is avalanching. The 100-ps switching time is formed not during the passage of superfast ionizing front in the "active" part of the device, as it is widely believed, but by the discharge time of the "passive part" over the conducting "active" part. The inner circuital current that flows within the device along the closed loop plays a dominant role in this process. Sources of initial carriers, the temperature dependence of the effect, and the limits of drift-diffusion transport model in describing the phenomenon of delayed breakdown are discussed. [ABSTRACT FROM AUTHOR]