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5 results on '"Ilwan Jang"'

1. Study of ethanolamine surface treatment on the metal-oxide electron transport layer in inverted InP quantum dot light-emitting diodes

Author

Sung Kyu Park, Chul Jong Han, Min Suk Oh, Tonino Greco, Ilwan Jang, Armin Wedel, Chang Jun Park, Won Keun Kim, Jiwan Kim, Jeongno Lee, Christian Ippen, and Publica

Subjects
Materials science, Annealing (metallurgy), business.industry, Analytical chemistry, Oxide, chemistry.chemical_element, Zinc, Electronic, Optical and Magnetic Materials, law.invention, Metal, chemistry.chemical_compound, Ethanolamine, chemistry, Quantum dot, law, visual_art, visual_art.visual_art_medium, Optoelectronics, business, Diode, Light-emitting diode
Abstract

The present work shows the effect of ethanolamine surface treatment on inverted InP quantum dot light-emitting diodes (QD-LEDs) with inorganic metal oxide layers. In the inverted structure of ITO/ZnO/InP QDs/CBP/MoO3/Al, a sol-gel derived ZnO film was used as an electron transport layer (ETL) and MoO3 was used as a hole injection layer (HIL). First, ethanolamine was treated as a surface modifier on top of the ZnO electron transport layer. The optical performance of the QD-LED device was improved by the ethanolamine surface treatment. Second, low temperature annealing (

Published
2015

2. Paper No P18: Study of interfacial treatment on the metal-oxide electron transport layer in the InP quantum dot light-emitting diodes

Author

Ilwan Jang, W. K. Kim, C. Ippen, Sung Kyu Park, Yohan Kim, A. Wedel, C. J. Han, Jiwan Kim, and Publica

Subjects
Electron transport layer, Materials science, business.industry, Annealing (metallurgy), Oxide, law.invention, Metal, chemistry.chemical_compound, Ethanolamine, chemistry, Quantum dot, law, visual_art, visual_art.visual_art_medium, Optoelectronics, business, Diode, Light-emitting diode
Abstract

In this article, we describe the effect of ethanolamine (EA) surface treat-ment on the inverted InP quantum dot light-emitting diodes (QD-LEDs) with inorganic metal oxide layers. The efficiency of the inverted QD-LEDs was significantly enhanced by EA treatment and optimization of the ZnO annealing temperature.

Published
2015

3. Inverted InP quantum dot light-emitting diodes using low-temperature solution-processed metal-oxide as an electron transport layer

Author

Won Keun Kim, Jeongno Lee, Armin Wedel, Tonino Greco, Jiwan Kim, Chul Jong Han, Sung Kyu Park, Christian Ippen, Min Suk Oh, Ilwan Jang, and Publica

Subjects
Electron transport layer, Materials science, Physics and Astronomy (miscellaneous), Annealing (metallurgy), business.industry, General Engineering, Oxide, General Physics and Astronomy, law.invention, Solution processed, Metal, chemistry.chemical_compound, chemistry, law, Quantum dot, visual_art, visual_art.visual_art_medium, Optoelectronics, business, Light-emitting diode, Diode
Abstract

The present work shows the inverted InP quantum dot light-emitting diodes (QD-LEDs) with inorganic metal oxide layers. In the inverted structure of ITO/ZnO/InP QDs/CBP/MoO3/Al, a solgel derived ZnO film was used as an electron transport layer (ETL) and MoO3 was used as a hole injection layer (HIL). In contrary to high annealing temperature (>200 °C) for conventional ZnO films, low temperature annealing (∼150 °C) was performed for solgel derived ZnO film. The performance of the inverted QD-LEDs was efficiently improved by optimization of the annealing time and temperature of ZnO ETL. The current efficiency was significantly improved about 215% by lowering annealing temperature of ZnO ETL.

Published
2015

4. Electrical aging effect of ZnS based quantum dots for white light-emitting diodes

Author

Chul Jong Han, Armin Wedel, Christian Ippen, Sung Kyu Park, Yohan Kim, Jeongno Lee, Ilwan Jang, Tonino Greco, Jiwan Kim, Min Suk Oh, and Publica

Subjects
Electrical aging, Wavelength, Colloid, Materials science, PEDOT:PSS, business.industry, Quantum dot, White light, Optoelectronics, business, Electronic, Optical and Magnetic Materials, Diode, Visible spectrum
Abstract

The present work reports cadmium-free colloidal ZnS:Al quantum dot (QD) based white quantum dot light-emitting diodes (QD-LEDs). The device was fabricated with a structure of ITO/PEDOT:PSS/PVK/QDs/TPBi/LiF/Al using synthesized ZnS:Al QDs which has 393 nm of peak wavelength and sub peaks in visible wavelength. White emission with high color rending index (CRI) was achieved by the combination of blue emission from PVK and ZnS:Al QDs, electroplex emission at the interface between PVK and ZnS:Al QDs, and Al traps/defects emission, which are controlled by electrical aging effect. The characteristic of our device shows the potential for spectrum tunable and Cd-free white QD-LEDs in the near future.

Published
2014

5. Inverted InP quantum dot light-emitting diodes using low-temperature solution-processed metal–oxide as an electron transport layer.

Author

Ilwan Jang, Jiwan Kim, Christian Ippen, Tonino Greco, Min Suk Oh, Jeongno Lee, Won Keun Kim, Armin Wedel, Chul Jong Han, and Sung Kyu Park

Abstract

The present work shows the inverted InP quantum dot light-emitting diodes (QD-LEDs) with inorganic metal oxide layers. In the inverted structure of ITO/ZnO/InP QDs/CBP/MoO3/Al, a sol–gel derived ZnO film was used as an electron transport layer (ETL) and MoO3 was used as a hole injection layer (HIL). In contrary to high annealing temperature (>200 °C) for conventional ZnO films, low temperature annealing (∼150 °C) was performed for sol–gel derived ZnO film. The performance of the inverted QD-LEDs was efficiently improved by optimization of the annealing time and temperature of ZnO ETL. The current efficiency was significantly improved about 215% by lowering annealing temperature of ZnO ETL. [ABSTRACT FROM AUTHOR]

Published
2015
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