194 results on '"Ikeda, Keiji"'
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2. Ultra-High Endurance (>1012) and High Drive-Current Selector in Sub-30nmΦ Cell using Stable Oxide Doped with As-Se Free High Melting-Point Compound
3. Correction to: Enigmatic Diphyllatea eukaryotes: culturing and targeted PacBio RS amplicon sequencing reveals a higher order taxonomic diversity and global distribution
4. Enigmatic Diphyllatea eukaryotes: culturing and targeted PacBio RS amplicon sequencing reveals a higher order taxonomic diversity and global distribution
5. Amorphous Oxide Semiconductor TFTs for BEOL Transistor Applications
6. Fabrication of bonded GeOI substrates with thin Al2O3/SiO2 buried oxide layers
7. Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal–Insulator–Semiconductor Field-Effect Transistors with SiGe stressors
8. Introduction of local tensile strain on Ge substrates by SiGe stressors selectively grown on wet chemically recessed regions for strained Ge- nMOSFETs
9. Source/Drain Contact Engineering of InGaZnO Channel BEOL Transistor for Low Contact Resistance and Suppressing Channel Shortening Effect
10. 7‐2: Invited Paper: A 40 nm Gate Length Surrounding Gate Vertical‐Channel FET Using Thermally Stable In‐Al‐Zn‐O Channel for 3D CMOS‐LSI Applications
11. Ion implanted impurity profiles in Ge substrates and amorphous layer thickness formed by ion implantation
12. Surrounding Gate Vertical-Channel FET With a Gate Length of 40 nm Using BEOL-Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel
13. Characterization of platinum germanide/Ge(100) Schottky barrier height for Ge channel Metal Source/Drain MOSFET
14. Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain
15. Suppression of Channel Shortening and Reduction of S/D Parasitic Resistance in InGaZnO channel BEOL Transistor by Insertion of thermally stable InAlZnO Contact Layer
16. Surrounding Gate Vertical-Channel FET with Gate Length of 40 nm using BEOL Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel
17. Performance of Germanium Metal-Insulator-Semiconductor Field Effect Transistors with Nickel Germanide Source/Drain
18. Influence of Interfacial Oxygen and Carbon on Misfit Dislocation Generation in SiGe Epitaxial Layers
19. Formation of High Aspect-Ratio Ge-Fin Structures with {110} Facets by Anisotropic Wet Etching
20. Additional file 1: of Enigmatic Diphyllatea eukaryotes: culturing and targeted PacBio RS amplicon sequencing reveals a higher order taxonomic diversity and global distribution
21. High Performance In-Zn-O FET with High On-current and Ultralow (<10−20 A/μm) Off-state Leakage Current for Si CMOS BEOL Application
22. High mobility (>30 cm2 V−1 s−1) and low source/drain parasitic resistance In–Zn–O BEOL transistor with ultralow <10−20 A μm−1 off-state leakage current
23. Tungsten/In–Sn–O stacked source/drain electrode structure of In–Ga–Zn–O thin-film transistor for low-contact resistance and suppressing channel shortening effect
24. Thermal Stability of Si/Ge Hetero-Interface Grown by Atomic-Layer Epitaxy
25. Characterization of initial one monolayer growth of Ge on Si(1 0 0) and Si on Ge(1 0 0)
26. Active Seismic Source Experiment in and around Sakurajima Volcano in 2013 and Comparison with the Experiment in 2008
27. Repetitive Seismic Survey 2013 in Sakurajima Volcano, South Kyushu, Japan. The Fifth Round
28. 7‐2: Invited Paper:A 40 nm Gate Length Surrounding Gate Vertical‐Channel FET Using Thermally Stable In‐Al‐Zn‐O Channel for 3D CMOS‐LSI Applications
29. Comprehensive investigation on parameter extraction methodology for short channel amorphous-InGaZnO thin-film transistors
30. Origin of High Mobility in InSnZnO MOSFETs
31. Suppression of channel shortening effect for InGaZnO Thin-Film-Transistor by In-Sn-O source/drain electrodes
32. Charge-based Neuromorphic Cell by InGaZnO Transistor and Implementation of Simple Scheme Spike-Timing-Dependent Plasticity
33. Charge-Coupling Extended-Gate Amorphous-InGaZnO-Based Thin-Film Transistor for Use as Ultrasensitive Biosensor
34. High-Mobility and H2-Anneal Tolerant InGaSiO/InGaZnO/InGaSiO Double Hetero Channel Thin Film Transistor for Si-LSI Compatible Process
35. Accurate evaluation of Ge metal-insulator-semiconductor interface properties.
36. The Repeated Seismic Survey 2012 in Sakurajima Volcano, South Kyushu, Japan. The Fourth Round
37. High-mobility and H2-anneal tolerant InGaSiO/InGaZnO/InGaSiO double hetero channel thin film transistor for Si-LSI compatible process
38. New layout design methodology for monolithically integrated 3D CMOS logic circuits based on parasitics engineering
39. A fundamental study to detection of magma transfer from Aira caldera
40. (Invited) In-Situ Doped Epitaxial Growth of Highly Dopant-Activated n +-Ge Layers for Reduction of Parasitic Resistance of Ge-nMISFETs
41. New layout design methodology for monolithically integrated 3D CMOS logic circuits based on parasitics engineering
42. In situ doped epitaxial growth of highly dopant-activated n+-Ge layers for reduction of parasitic resistance in Ge-nMISFETs
43. (Invited) Mobility Enhancement of Uniaxially Strained Germanium Nanowire MOSFETs
44. Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2hybrid buried oxide layers
45. Strained germanium nanowire MOSFETs
46. Improvement of current drive of Ge-nMISFETs by epitaxially grown n+-Ge:P source and drain
47. (Invited) Strained Germanium Nanowire MOSFET with Low-Parasitic Resistance Metal Source/Drain
48. Advantage of (001)/<100> oriented channels in biaxially- and uniaxially strained-Ge-on-insulator pMOSFETs with NiGe metal source/drain
49. First demonstration of threshold voltage control by sub-1V back-gate biasing for thin body and buried-oxide (TBB) Ge-on-insulator (GOI) MOSFETs for low-power operation
50. Fabrication of Bonded GeOI Substrates with Thin Al2O3/SiO2 Buried Oxide Layers
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