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Indium oxide and doped indium oxide films were successfully grown utilizing a plasma-enhanced atomic layer deposition supercycling process, which was found to be an effective means of controlling films' composition and, hence, their properties. Using trimethylindium and oxygen plasma as an indium precursor and a co-reactant, respectively, a growth rate of approximately 1.26 Å per cycle was obtained based on thickness measurements by spectroscopic ellipsometry. Three distinct dopants, Sn, Ti, and Mo, have been incorporated into indium oxide. The effects of dopant type, cycle ratio of dopant to indium oxide, and thermal annealing on the structural, electrical, and optical properties were studied. The deposited films consisted of polycrystalline columnar grains perpendicular to the substrate with a cubic bixbyite structure and [111] as the favored growth direction. Thermal annealing had a significant effect on the film characteristics, resulting in an order of magnitude reduction in resistivity, as well as changes in transmittance in the near-infrared (NIR) and ultraviolet (UV) regions. The lowest resistivities achieved for Sn-doped, Ti-doped, and Mo-doped were 2.8 × 10−4, 4.2 × 10−4, and 6.1 × 10−4 Ω cm, respectively. The changes are attributed to dopant activation, as the UV shift between the differently doped samples may be linked to the Moss–Burstein effect and the NIR behavior can be explained by an increase in charge carrier density, as predicted by the Drude model. The three dopants primarily provide a trade-off between electrical resistance and NIR transparency. Mo-doped films exhibited the highest near-infrared transparency, while Sn-doped films offered the lowest sheet resistance. [ABSTRACT FROM AUTHOR]

InN holds great promise for a wide range of applications, including broadband optical devices, high-frequency electronic devices, and serving as a substrate for highly sensitive gas detectors and efficient catalysts. Nevertheless, production of high-quality InN thin films through epitaxy has remained a significant challenge. This is primarily due to complexities arising from the low dissociation temperature and the high N2 equilibrium pressure of InN, which lead to formation of numerous nitrogen vacancies and a propensity to generate indium metal nanoparticles. Efficacy of the indium bilayer pre-deposition method for InN film growth has been established in prior studies. In this work, we introduce a specialized hydrogen insertion method to further enhance nitridation of the indium bilayer. The corresponding kinetic mechanism has been demonstrated through theoretical simulations and practical epitaxy experiments, leading to the development of an optimized hydrogen insertion process. This research represents a substantial improvement over existing InN epitaxial methods that involve control of the indium bilayer and introduces a novel mechanism for enhancing InN heteroepitaxy. [ABSTRACT FROM AUTHOR]

In this work, a low-profile optical transparent wideband metamaterial absorber based on radiation–absorption reciprocal theory is proposed. The top layer and bottom layer are composed of indium tin oxide–polyethylene terephthalate films, and the middle layer is a transparent substrate polymethyl methacrylate. The method of transparent wideband absorption using reciprocal theory is proposed to guide the design. Based on characteristic mode analysis and calculated equivalent aperture efficiency, the absorber consisting of composite resonators is analyzed and designed. The equivalent circuit model and surface current distributions are studied to verify the design. The numerical results show that high absorption of greater than 90% in the frequency range of 5.7–16.4 GHz is obtained. A wideband absorption rate of greater than 80% at a 60° incident angle under TM polarization and an absorption rate of greater than 65% at a 60° incident angle under TE polarization are obtained. The proposed design has the advantages of broadband absorption, polarization insensitivity, light transmittance of more than 70%, and compact structure, which can be applied to special scenes that require optical transparency, such as anechoic chamber glass and cockpit glass. [ABSTRACT FROM AUTHOR]

We investigate the sub-bandgap optical absorption (SOA) in 300-nm-thick Al1−xInxN alloys used in cladding layers of edge-emitting laser diodes and distributed Bragg reflectors of vertical-cavity surface-emitting lasers. Al1−xInxN alloys, with indium content x ranging from 0.114 to 0.185, were grown by metal-organic chemical vapor deposition on a c-plane GaN/sapphire template. SOAs on 300-nm-thick thin films were characterized using photothermal deflection spectroscopy (PDS). Thermal emission, such as nonradiative recombination with phonon emission, is the dominant energy relaxation process occurring after SOA in Al1−xInxN alloys. The absorption coefficient of the SOA was estimated to be 0.6–7.0 × 103 cm−1 in these samples by combining PDS and spectroscopic ellipsometry. The drastic increase in the SOA, when x exceeded the lattice-matched composition of the GaN/sapphire template, indicates that impurities, vacancy-type defects, and their complexes with increasing x are possible candidates that result in SOA in Al1−xInxN alloys. [ABSTRACT FROM AUTHOR]

The recent observations of superconductive ordering in low-dimensional systems comprising twisted and rhombohedral ABC-stacked multilayer graphene have attracted significant attention. One-dimensional moiré superlattices and flat-bands have been interestingly reported to occur also in collapsed chiral carbon nanotubes. In this work we report the unusual stabilization of hexagonal moiré-like superlattices in partially-collapsed carbon nano-onions (CNOs). Such a structural transition was identified by employing indium-isopropoxide as a growth-promoter, during the pyrolysis of fixed quantities of ferrocene, dichlorobenzene and sulfur. Raman point and mapping spectroscopy analyses highlight a significant enhancement in the D-band intensity with the increase of the indium-isopropoxide concentration, up to a maximum for a precursor quantity of 10 mg. A uniform growth product consisting of stacking-faults-rich partially collapsed CNOs is demonstrated. Larger amounts of indium-isopropoxide were instead found to yield a transition from CNO to carbon nanotubes (CNTs) and consequential depletion of the D-band intensity-parameter. [ABSTRACT FROM AUTHOR]

Electrocatalysts based on high‐valent indium are promising for formate production via CO2 electroreduction. However, reconstruction often occurs during the reaction progress, resulting in a decline in catalytic performance. Here, a composite of In2O3/In2S3 is developed, and its catalytic performance exceeds that of either individual phase, particularly in stability. Analysis of morphology, valence state, and in situ Raman spectroscopy reveals that In2O3 is well preserved during the reaction. Theoretical calculations suggest that the desorption energy of lattice oxygen on In2O3 can be strengthened due to In2O3‐In2S3 bonding within the composite. This reinforcement facilitates the formation of more active sites and promotes CO2 adsorption, further decreasing the energy barrier of formate production to only 0.12 eV. As a result, the composite exhibits a formate selectivity over 95.05% at –1.13 V vs reversible hydrogen electrode accompanied by a partial current density of 434.4 mA cm–2. Notably, the selectivity of formate maintains over 95% even after 50 h at an industrial‐level current density of 200 mA cm–2, 17 times longer than the individual phase. Furthermore, 18.33% solar‐to‐formate and 19.49% solar‐to‐fuel are obtained when coupled with III‐V solar cells, demonstrating its feasibility. [ABSTRACT FROM AUTHOR]

Subnanometer metal clusters show advantages over conventional metal nanoparticles in numerous catalytic reactions owing to their high percentage of exposed surface sites, abundance of under‐coordinated metal sites and unique electronic structures. However, the applications of subnanometer metal clusters in high‐temperature catalytic reactions (>600 °C) are still hindered, because of their low stability under harsh reaction conditions. In this work, we have developed a zeolite‐confined bimetallic PtIn catalyst with exceptionally high stability against sintering. A combination of experimental and theoretical studies shows that the isolated framework In(III) species serve as the anchoring sites for Pt species, precluding the migration and sintering of Pt species in the oxidative atmosphere at ≥650 °C. The catalyst comprising subnanometer PtIn clusters exhibits long‐term stability of >1000 h during a cyclic reaction‐regeneration test for ethane dehydrogenation reaction. [ABSTRACT FROM AUTHOR]

This report documents evaluation of simultaneous estimation of multiple interfacial heat transfer coefficients (HTCs) using transient measurements from an experiment designed for steady-state operation. The design of a mirror system for directing X-rays under cryogenic conditions requires knowledge of the interfacialHTC (contact conductance) between silicon and indium. An experimental apparatus was constructed to measure temperatures in a stack of five 7.62-mm thick pucks of silicon separated by 0.1-mm thick sheets of indium, which is operated under cryogenic temperatures in vacuum. Multiple pucks and interfaces are incorporated into the apparatus to allow evaluation of HTCs for surfaces of different roughness from a single experiment. Analysis of the sensitivity of each of the measured temperatures to each of the unknown HTCs reveals lack of linear independence of these sensitivities and suggests the recovery of the HTCs will be challenging. Artificially noised "data" were created from two different computational models by solving for temperatures and adding random Gaussian noise with a specified standard deviation. These data are subsequently analyzed using two different iterative parameter estimation methods: a Levenberg scheme and a Tikhonov iterative scheme. The required sensitivity matrix is computed using forward finite difference approximations. The results for the heat transfer coefficients for this model problem suggest that coefficients cannot be estimated independently, but the ratios relative to one of the unknowns can be recovered. [ABSTRACT FROM AUTHOR]

Oxide semiconductor-based thin-film transistors (TFTs) are promising candidates for display backplanes and memory device applications. To achieve high device performance and sustain the electrical properties under prolonged operation, it is important to overcome the mobility–stability trade-off in oxide TFTs. Here, we propose a bilayer-structured semiconductor stack formed by plasma-enhanced atomic layer deposition (PEALD), where an indium-free gallium zinc oxide (GZO) film is grown on top of indium gallium zinc oxide (IGZO), to be implemented in top gate devices. Applying a GZO layer (with optimum Ga to Zn ratio) between the IGZO and the gate insulator (GI) resulted in two major effects: interface engineering and band alignment modulation. While maintaining a sufficiently large field effect mobility (31.9 cm2 V−1 s−1), considerable improvements in device reliability were observed concerning positive-bias thermal stress (PBTS) and negative-bias illumination stress (NBIS) compared to TFTs incorporating IGZO single layers. This suggests that proper composition control through PEALD in the bilayer oxide semiconductor TFT may help achieve an appropriate balance between mobility and reliability. [ABSTRACT FROM AUTHOR]

The impact of light‐induced degradation (LID) treatments is investigated using low‐temperature photoluminescence in Si:In. A feature called as the P‐line, located at 1.118 eV, provides information on the decisive energy barrier for the LID effect. The intensity of the P‐line can be reproducibly influenced by illumination and annealing treatments. The decay of the P‐line after quenching, illumination, and moderate annealing of the silicon samples is measured as function of time and annealing temperature. Both indium‐doped as‐grown Czochralski and indium implanted float‐zone silicon wafers are examined and their behavior is compared. Based on these measurements, an energy barrier for the P‐line defect transition E(2)(1)all=(0.62±0.06) eV$E_{\left(\right. 2 \left.\right) \left(\right. 1 \left.\right)}^{\text{all}} = \left(\right. 0.62 \pm 0.06 \left.\right) \textrm{ } \text{eV}$ is calculated. The LID defect model is used to discuss the results. [ABSTRACT FROM AUTHOR]

This study focuses on zinc oxide by both computational and experimental methods. Pure and In-doped ZnO thin films were produced by spray pyrolysis at 300∘C onto glass substrate. X-ray patterns reveal the polycrystalline structure according to wurtzite along the (002) direction recording a smaller grain size in nanometric scale. This aspect is confirmed by AFM scanned pictures. High transparency of thin film is observed in spite of the indium insertion into ZnO lattice which decreases it slightly. A wide bandgap exceeds 3 eV of such as-grown films were recorded. Blue and orange emissions were detected as confirmed by photoluminescence analysis. Computational result analysis is used to demonstrate the ideal geometries in the ground states of pure and doped ZnO. The UV–visible absorption band shifts from 360 nm to 448 nm as a result of In-doping. The HUMO and LUMO diagrams demonstrate a drop in energy E as a result of doping, and the DOS profiles validate and confirm this detail. Also, the effect of indium on the linear and nonlinear optical parameters of zinc oxide was discussed. [ABSTRACT FROM AUTHOR]

Light‐emitting diodes (LED) are widely used for energy savings. A lot of different materials and especially metals are needed to produce LED. End‐of‐life LED contain critical metals like indium or rare earth elements. In this study, first a thermochemical step is used to recover the critical metal indium from LED with hydrochloric acid‐containing vapor from polyvinyl chloride as chlorine source. Then, the LED residue is leached with sulfuric acid and hydrogen peroxide. From the leachate, the heavy rare earth element lutetium can be extracted with n‐octanol and tributyl phosphate. [ABSTRACT FROM AUTHOR]

Liquid metal alloys can accumulate specific solute metal atoms on their surface, creating distinct quasi‐ordered atomic layers. Such atomic layers can be tuned by varying the alloy composition to form catalytic interfaces suited for multi‐step reactions. Here, the surface enrichment in gallium‐indium alloys is studied and utilized for carbon dioxide (CO2) electrochemical reduction. The results show that adding a small amount of indium (16.8 at%) to gallium leads to a significant indium enrichment of >83 at% on the topmost layer of the alloy. This enrichment dictates the CO2 conversion pathway, leading to 98% faradaic efficiency toward formate at −1.90 V vs reversible hydrogen electrode (RHE). This study produces unprecedented insights into key interfacial processes and lays the foundation for significant further work within the areas of catalysis and liquid metals. [ABSTRACT FROM AUTHOR]

The achievement of complete conversion of PbBr 2 films presents a significant challenge in the development of CsPbBr 3 films with consistent growth, comprehensive coverage, and controllable components. To address this challenge, introducing a porous structure in the planar PbBr 2 film is advantageous for facilitating the immersion of CsBr precursor, thereby reducing impurity phase formation and mitigating strain caused by the film volume expansion. In order to accomplish this, indium tribromide (InBr 3) was employed as an additive and the InBr 3 (DMF) 3 adduct was utilized to expedite the release of organic molecules in PbBr 2 (DMF), resulting in the transformation of planar PbBr 2 film into porous structures. The growth orientation of PbBr 2 crystals was altered by this transformation, effectively suppressing the generation of metallic Pb impurities in the film. Additionally, it not only optimizes the morphology of CsPbBr 3 film but also reduces impurity phase. As a result, the InBr 3 :CsPbBr 3 perovskite solar cell achieved an efficiency of 7.28 %. The majority of In3+ ions were concentrated near the buried interface between SnO 2 and InBr 3 :CsPbBr 3 , leading to significant improvements in both non-radiative recombination defect states within the perovskite film and electron injection and collection capabilities within the device. [ABSTRACT FROM AUTHOR]

By exploiting the electronic capabilities of the N‐heterocyclic boryloxy (NHBO) ligand, we have synthesized "naked" acyclic gallyl [Ga{OB(NDippCH)2}2]− and indyl [In{OB(NDippCH)2}2]− anions (as their [K(2.2.2‐crypt)]+ salts) through K+ abstraction from [KGa{OB(NDippCH)2}2] and [KIn{OB(NDippCH)2}2] using 2.2.2‐crypt. These systems represent the first O‐ligated gallyl/indyl systems, are ultimately accessed from cyclopentadienyl GaI/InI precursors by substitution chemistry, and display nucleophilic reactivity which is strongly influenced by the presence (or otherwise) of the K+ counterion. [ABSTRACT FROM AUTHOR]

The study investigates the potential of technology-critical elements (TCEs) in the bottom sediments of the Biała Przemsza River as indicators of anthropogenic activities. The mass fractions of TCEs: Ge, Ga, In, Tl, Sb and Te (and other elements) in the sediment were analysed by inductively coupled plasma mass spectrometry with the maximum mass fractions: 2.46, 25.6, 0.528, 27.7, 12.5 and 0.293 mg/kg, respectively. Distribution and identification of TCE sources were supported by statistical analysis (principal component analysis coupled with varimax rotation and hierarchical cluster analysis). Assessments of TCE contamination using the geoaccumulation index, pollution index, contamination factor, enrichment factor and the antimony-to-arsenic ratio highlighted the high contamination of bottom sediments by Sb, Ga, Tl, Cd, As, Zn, Pb and moderate contamination by Co, In and V. Distinct behaviour patterns were observed among TCEs, revealing Sb and Tl as potential indicators of Zn-Pb ore mining activities. Co, V, Ge and, to a lesser extent, Te emerged as promising indicators of coal and coal fly ash effluents. Sequential chemical extraction of TCEs showed that Sb, In and Tl had the highest mobility from sediments. The Risk Assessment Code calculations suggest, that in the Biała Przemsza River bottom sediments, there is an average risk of contamination by As, Tl and Mn. Soluble forms of Tl, Ge, Sb, Te and In were identified in descending order, indicating their bioavailability. [ABSTRACT FROM AUTHOR]

Chalcogenide glasses have broad applications in the mid-infrared optoelectronics field and as phase-change materials (PCMs) due to their unique properties. Chalcogenide glasses can have crystalline and amorphous phases, making them suitable as PCMs for reversible optical or electrical recording. This study provides an in-depth analysis of the evaporation kinetics of indium-doped chalcogenides, GeTe4 and GeTe5, using the physical vapor deposition technique on glass substrates. Our approach involved a detailed examination of the evaporation process under controlled temperature conditions, allowing precise measurement of rate changes and energy dynamics. This study revealed a significant and exponential increase in the evaporation rate of GeTe4 and GeTe5 with the introduction of indium, which was particularly noticeable at higher temperatures. This increase in evaporation rate with indium doping suggests a more complex interplay of materials at the molecular level than previously understood. Furthermore, our findings indicate that the addition of indium affects the evaporation rate and elevates the energy requirements for the evaporation process, providing new insights into the thermal dynamics of these materials. This study's outcomes contribute significantly to understanding deposition processes, paving the way for optimized manufacturing techniques that could lead to more efficient and higher-performing optoelectronic devices and memory storage solutions. [ABSTRACT FROM AUTHOR]

Lapachol (2-hydroxy-3-(3-methylbut-2-en-1-yl)naphthalene-1,4-dione) is a 1,4-naphthoquinone-derived natural product that presents numerous bioactivities and was shown to have cytotoxic effects against several human tumor cells. Indium(III) complexes with a variety of ligands also exhibit antineoplastic activity. Indium(III) complexes [In(lap)Cl2].4H2O (1), [In(lap)2Cl(Et3N)] (2), [In(lap)3]·2H2O (3) [In(lap)(bipy)Cl2] bipy = 2,2′-bipyridine (4) and [In(lap)(phen)Cl2] phen = 1,10-phenanthroline (5) were obtained with 2-hydroxy-3-(3-methylbut-2-en-1-yl)naphthalene-1,4-dione (lapachol). Crystal structure determinations for (4) and (5) revealed that the indium(III) center is coordinated to two O atoms from lapachol, two N atoms from 1,10-phenanthroline or 2,2′-bipyridine, and two chloride anions, in a distorted octahedral geometry. Although both complexes (4) and (5) interacted with CT-DNA in vitro by an intercalative mode, only 5 exhibited cytotoxicity against MCF-7 and MDA-MB breast tumor cells. 1,10-phenanthroline and complex (5) presented cytotoxic effects against MCF-7 and MDA-MB cells, with complex (5) being threefold more active than 1,10-phenanthroline on MCF-7 cells. In addition, complex (5) significantly reduced the formation of MDA-MB-231 colonies in a clonogenicity assay. The foregoing results suggest that further studies on the cytotoxic effects and cellular targets of complex (5) are of utmost relevance. [ABSTRACT FROM AUTHOR]

p‐type 2D ferroelectric semiconductors (2D FeSs) play an increasingly essential role in the advanced nonvolatile and morphotropic beyond‐Moore electronic devices with high performance and low power consumption. But reliable p‐type 2D FeS with holes as majority carriers are still scarce. Herein, the first experimental realization of room‐temperature ferroelectricity in van der Waals layered β‐In1.75Sb0.25Se3 down to few layer is reported. The origin of ferroelectricity in β‐In1.75Sb0.25Se3 comes from aliovalent elemental substitution, antimony substituting to the indium sites (SbIn), changing the local environment of the central‐layer Se atoms. Thanks to the intrinsic ferroelectric and semiconducting natures, FeS field‐effect transistor (FeSFET) devices based on β‐In1.75Sb0.25Se3 exhibit reconfigurable, multilevel nonvolatile memory (NVM) states, which can be successively modulated by gate voltage stimuli. Furthermore, the inherent operation mechanism, due to the switchable polarization, indicates that a neuromorphic memory is also possible with 2D FeSFETs. These presented results facilitate the technological implementation of versatile 2D FeS devices for next‐generation logic‐in‐memory approach for Internet‐of‐Things entities. [ABSTRACT FROM AUTHOR]

Chalcones are a class of naturally occurring flavonoid compounds associated to a variety of biological and pharmacological properties. Several reviews have been published describing the synthesis and biological properties of a vast array of analogues. However, overviews on the reactivity of chalcones has only been explored in a few accounts. To fill this gap, a systematic survey on the most recent developments in the transition metal‐catalyzed transformation of chalcones was performed. The chemistry of copper, palladium, zinc, iron, manganese, nickel, ruthenium, cobalt, rhodium, iridium, silver, indium, gold, titanium, platinum, among others, as versatile catalysts will be highlighted, covering the literature from year 2000 to 2023, in more than 380 publications. [ABSTRACT FROM AUTHOR]

One of the characteristic features of PbTe is an uncommon growth of bandgap with increasing temperature, which is quite opposite to the bandgap behavior of the semiconductors commonly used in electronics, for example, Si, Ge, GaAs, and InSb. This specificity allows one to increase the operating temperature of photodiodes fabricated using PbTe up to about 150 K. At the first stage of development, we prepared infrared (IR) photodiodes on the base of bulk single crystalline PbTe. To this end, the ingots with a diameter of about 40 mm were grown by the Czochralski technique. Then, the PbTe p–n junctions were fabricated by using indium donor diffusion to diffuse indium into the PbTe samples. Current–voltage and capacitance–voltage characteristics and spectral detectivity were measured over a wide temperature range and analyzed. The dark saturation current density at T = 100 K was of the order of 10−7 A/cm2. Finally, the unique solid-state multi-stage thermoelectric cooler operated at temperatures up to 150 K was developed. The present study would pave the way to creating a module for efficient photodetection in the mid-wave IR range combining two solid-state devices, namely, the p–n photodiode and thermoelectric cooler, while the latter supports the former. [ABSTRACT FROM AUTHOR]

In this work, tetrahydrobenzo[a]xanthene-11-ones are effectively synthesized without the need for solvents and in an environmentally safe manner by the use of indium sulfide (In2S3) nanoparticle as a catalyst. Indium sulfide (In2S3) nanoparticles were synthesized by the hydrothermal method, and X-ray diffraction pattern (XRD), energy-dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM), and transition electron microscopy (TEM) were among the techniques used to characterize indium sulfide (In2S3) nanoparticles. The synthesis of tetrahydrobenzo[a]xanthene-11-ones was achieved in a single pot using a three-component reaction involving β-naphthol, dimedone, and aryl aldehyde. The resultant indium sulfide (In2S3) nanoparticles were produced without the need for a solvent and exhibited remarkable yields, as well as quick reaction times and reusable catalysts. [ABSTRACT FROM AUTHOR]

Defect levels induced by defect-complexes in Ge play important roles in device fabrication, characterization, and processing. However, only a few defect levels induced by defect-complexes have been studied, hence limiting the knowledge of how to control the activities of numerous unknown defect-complexes in Ge. In this study, hybrid density functional theory calculations of defect-complexes involving oversize atom (indium) and n-type impurity atoms in Ge were performed. The formation energies, defect-complex stability, and electrical characteristics of induced defect levels in Ge were predicted. Under equilibrium conditions, the formation energy of the defect-complexes was predicted to be within the range of 5.90–11.38 eV. The defect-complexes formed by P and In atoms are the most stable defects with binding energy in the range of 3.31-3.33 eV. Defect levels acting as donors were induced in the band gap of the host Ge. Additionally, while shallow defect levels close to the conduction band were strongly induced by the interactions of Sb, P, and As interstitials with dopant (In), the double donors resulting from the interactions between P, As, N, and the host atoms including In atom are deep, leading to recombination centers. The results of this study could be applicable in device characterization, where the interaction of In atom and n-type impurities in Ge is essential. This report is important as it provides a theoretical understanding of the formation and control of donor-related defect-complexes in Ge. [ABSTRACT FROM AUTHOR]

p‐type 2D ferroelectric semiconductors (2D FeSs) play an increasingly essential role in the advanced nonvolatile and morphotropic beyond‐Moore electronic devices with high performance and low power consumption. But reliable p‐type 2D FeS with holes as majority carriers are still scarce. Herein, the first experimental realization of room‐temperature ferroelectricity in van der Waals layered β‐In1.75Sb0.25Se3 down to few layer is reported. The origin of ferroelectricity in β‐In1.75Sb0.25Se3 comes from aliovalent elemental substitution, antimony substituting to the indium sites (SbIn), changing the local environment of the central‐layer Se atoms. Thanks to the intrinsic ferroelectric and semiconducting natures, FeS field‐effect transistor (FeSFET) devices based on β‐In1.75Sb0.25Se3 exhibit reconfigurable, multilevel nonvolatile memory (NVM) states, which can be successively modulated by gate voltage stimuli. Furthermore, the inherent operation mechanism, due to the switchable polarization, indicates that a neuromorphic memory is also possible with 2D FeSFETs. These presented results facilitate the technological implementation of versatile 2D FeS devices for next‐generation logic‐in‐memory approach for Internet‐of‐Things entities. [ABSTRACT FROM AUTHOR]

Exploring stable and robust catalysts to replace the current toxic CuCr based catalysts for dehydrogenative coupling of ethanol to ethyl acetate is a challenging but promising task. Herein, novel NiIn based catalysts were developed by tailoring Ni catalysts with Indium (In) for this reaction. Over the optimal Ni0.1Zn0.7Al0.3InOx catalyst, the ethyl acetate selectivity reached 90.1% at 46.2% ethanol conversion under the conditions of 548 K and a weight hourly space velocity of 1.9 h-1 in the 370 h time on stream. Moreover, the ethyl acetate productivity surpassed 1.1 gethyl acetate gcatalyst-1 h-1, one of the best performance in current works. According to catalyst characterizations and conditional experiments, the active sites for dehydrogenative coupling of ethanol to ethyl acetate were proved to be Ni4In alloys. The presence of In tailored the chemical properties of Ni, and subsequently inhibited the C–C cracking and/or condensation reactions during ethanol conversions. Over Ni4In alloy sites, ethanol was dehydrogenated into acetaldehyde, and then transformed into acetyl species with the removal of H atoms. Finally, the coupling between acetyl species and surface-abundant ethoxyde species into ethyl acetate was achieved, affording a high ethyl acetate selectivity and catalyst stability. [ABSTRACT FROM AUTHOR]

Tris(pentafluoroethyl)indane dihydrate, [In(C2F5)3(OH2)2], and the gallium analog, [Ga(C2F5)3(OH2)2], serve as transfer reagents for the In(C2F5)3 and Ga(C2F5)3 units, as illustrated by the preparation of salts of (pseudo)halogenotris(pentafluoroethyl)indate and ‐gallate anions, [M(C2F5)3)X]− (M=Ga, In; X=F, Cl, Br, I, CN, SCN). Due to the water tolerance and water solubility of [In(C2F5)3(OH2)2] and [Ga(C2F5)3(OH2)2], reactions can be performed in the presence of water or even in an aqueous medium. [ABSTRACT FROM AUTHOR]

Liquid metals are an interesting class of materials with the unique combination of metallic nature and liquid fluidity, and have recently been explored in many emerging fields. Their potential applications in catalysis, unfortunately, remain largely untapped. Herein, Ga‐mediated liquid metal alloying as an effective strategy is demonstrated to prepare functional alloys for catalysis. The alloying is carried out by dissolving indium or tin pellets in liquid gallium at room temperature or assisted by gentle heating, giving rise to binary Ga1−xInx and Ga1−xSnx liquid metal alloys with tunable chemical compositions. When further subjected to ultrasonication in water, they are ruptured into nanosized particles with liquid metal cores and thin surface oxide shells. Electrochemical measurements reveal that the liquid metal alloying significantly promotes electrocatalytic CO2 reduction to formate. Taking Ga0.75In0.25 as an example, its formate Faradaic efficiency is enhanced by 10%–20% compared to those of Ga and In, and its formate partial current density is 4–6 times larger than those of Ga and In. This enhancement is rationalized via computational simulations showing that the surrounding of In active sites with Ga atoms deactivates the undesirable reaction pathways to CO or H2, and facilitates selective formate electrosynthesis. [ABSTRACT FROM AUTHOR]

The present study corroborates that the neutral tridentate N‐ligand 1,4,7‐trimethyl‐triazacyclononane (Me3TACN) qualifies as a versatile platform to study selective ligand exchange with rare‐earth‐metal alkyl complexes, herein [(Me3TACN)YMe3]. Treatment with Brønsted‐acidic bis(dimethylsilyl)amine, HN(SiHMe2)2, gave selectively the mono‐exchanged heteroleptic complex [(Me3TACN)YMe2{N(SiHMe2)2}]. Depending on the molecular ratio employed, the reaction of [(Me3TACN)YMe3] with AlMe3 resulted in the isolation/crystallization of [(Me3TACN)YMe2(AlMe4)] [1 : 1] or ion‐separated [(Me3TACN)YMe(AlMe4)][AlMe4] [1 : 2] and [(Me3TACN)YMe(AlMe4)][Al2Me7] [1 : 3]. Analogous reactions with the heavier group 13 methyls GaMe3 and InMe3 generated mixed methyl/tetramethylgallato complex [(Me3TACN)YMe2(GaMe4)] and ion‐separated [{(Me3TACN)YMe2}2{μ‐Me}][InMe4]. Finally, dimethylalane, HAlMe2, converted [(Me3TACN)YMe3] into heteroaluminate [(Me3TACN)Y(HAlMe3)3], representing an AlMe3‐supported, molecular yttrium trihydride complex. All compounds were investigated by single crystal X‐ray diffraction (SC‐XRD), homo‐ and heteronuclear (13C, 27Al, 89Y, 115In) NMR as well as IR spectroscopies and elemental analyses. [ABSTRACT FROM AUTHOR]

Facile transmetalation is observed from a d8 metal, platinum(II), to indium and gallium leading to the extrusion of methylated gallate and indate anions representing a rare case of the "reverse" transmetalation from a d8 metal to a main group metal. The Pt–Ga and Pt–In bonding in the bimetallic complexes was analyzed through bosonic and fermionic potentials, QTAIM, and NBO. [ABSTRACT FROM AUTHOR]

The thermal condensation of melamine into molecules melam, melem, and the one-dimensional polymer melon has already been reported. An interesting question arises about the impact of other compounds being present in this process of thermal conversion. The solid-state reaction of C3N6H6 with InCl3 leads to a novel compound featuring deprotonated melam units in a supramolecular assembly, based on the [C12N20H8]4− anion that is interconnected in the structure via N–In–N bonding. The reaction pathway of the formation of this compound is investigated by thermal analysis and the crystal structure of unique (NH4)[(InCl2)3(C12N20H8)]·⅔[InCl3(NH3)] is reported as well as its photoluminescence properties. [ABSTRACT FROM AUTHOR]

This paper aims to study the effect of ultrasonic aluminum (Al) bonding and lamination processes on the electrical performance of copper indium gallium (di)selenide (CIGS) thin film photovoltaic (TFPV) solar panels. Ultrasonic Al bonding on the MoSe2 layer of the CIGS TFPV solar panel was performed in three configurations: eight bonds, 16 bonds, and parallel configurations. The lamination process was performed on the Al bonds with MoSe2 layers of the CIGS TFPV solar panel. Ultrasonic bonding and lamination processes significantly affect the electrical performance of CIGS TFPV solar panels. Open circuit voltage, Voc is the least affected electrical characteristic with the application of ultrasonic bonding and lamination processes as compared to short circuit current (Isc), current density (Jsc), maximum power (Pmpp), fill factor (FF), and efficiency. 8-bonds configuration has the highest efficiency, ranging from 11.45% to 13.86% throughout unique connections of I-V measurement, compared to 16-bonds ranging from 7.99% to 10.77%, and parallel configurations, ranging from 9.14% to 11.92%. The notable variations in electrical properties with the processes used to create laminated CIGS TPFV solar panels with ultrasonic Al bonding can be explained by physical examination and lock-in infrared (IR) thermography. The ultrasonic Al bond is best suited to be used as the interconnection mean in the CIGS TFPV solar panel compared to that of conductive adhesive that has been widely applied nowadays. [ABSTRACT FROM AUTHOR]

The ternary solid solution Na2Ga7−xInx (x≤0.25) was synthesized by annealing the elements at 300 °C in sealed Ta ampoules. Differential thermal analysis (DTA) indicated incongruent phase formation. The peritectic temperature ranges from 501(2) °C (x=0) to 474(2) °C (x=0.25). In addition, the unit cell parameters increase significantly with In content. At its maximum of x=0.25, the unit cell volume increases by 1 % compared to Na2Ga7. The In positions are deduced from single‐crystal X‐ray diffraction data obtained for the composition Na2Ga6.95In0.05 (space group Pnma; Z=8; a=14.876(3) Å, b=8.688(2) Å, c=11.605(4) Å). In the crystal structure of Na2Ga7, which consists of Ga12 icosahedra and 4‐bonded Ga atoms, the In atoms solely substitute the latter. The Na atoms are located in the channels and cavities of the framework. The phase is electron‐precise and can be considered a Zintl‐Wade compound with the formula unit [Na+]16[(12b)Ga122−]4[(4b)Ga−]7.6[(4b)In−]0.4. [ABSTRACT FROM AUTHOR]

In(III) tetraarylporphyrin complexes with 4‐thiomethylphenyl (1‐InPor), thien‐3‐yl (2‐InPor), thien‐2‐yl (3‐InPor) and 5‐bromothien‐2‐yl (4‐InPor) meso‐aryl rings have been synthesized and characterized. The complexes have been conjugated to gold and silver nanoparticles (AuNPs and AgNPs). The photodynamic antimicrobial chemotherapy (PACT) activities of 1–4‐InPor and their AuNP and AgNP conjugates have been investigated against both planktonic bacteria and biofilms of Gram‐(+) S. aureus and Gram‐(−) E. coli. 2.5 μg.mL−1 solutions of 1–4‐InPor exhibited favorable PACT activities against planktonic S. aureus with high Log10 reduction values in the 4.28–7.69 range upon 75 min photoirradiation with a Thorlabs M625L3 LED (240 mW.cm−2) mounted onto the illumination chamber of a Modulight 7710 medical laser system to provide a dose at the well‐plate of 86 mJ.cm−2.min−1. In contrast, low values in the 1.4–1.9 range were obtained against E. coli with 10 μg.mL−1 solutions. 1–4‐InPor exhibited relatively low PACT activity against the biofilm cells of S. aureus and E. coli. Conjugation of 1–4‐InPor to AgNPs and AuNPs significantly enhanced the PACT activities. This is demonstrated by the complete eradication of planktonic S. aureus at shorter irradiation times with high Log10 values>7.69 and moderate Log10 values>2 against planktonic E. coli for the meso‐thienylporphyrin conjugates. [ABSTRACT FROM AUTHOR]

Chiral lead halide perovskites have captivated considerable attentions due to their distinctive attributes, such as ferroelectricity, spin‐dependent transport, and chiroptical activity. However, lead toxicity and weak circularly polarized luminescence (CPL) have cast a pall over their practical applications. Here, a series of 0D lead‐free chiral enantiomorphic hybrids, such as (R‐/S‐MBA)3In1‐xSbxCl6 (x = 0–1) is successfully developed. By optimizing the Sb3+ doping concentration to 0.55%, the resultant (R‐/S‐MBA)3In99.45%Sb0.55%Cl6 not only shows a near‐unity quantum yield but also emanates potent CPL, boasting a dissymmetry factor (glum) of 6.3 × 10–3. These efficient CPL activities are intricately tied to the presence of a twisted luminescent cluster [SbCl6]3– induced by structural chirality. The comprehensive results reveal that the emission of the chiral perovskite originated from self‐trapped excitons (STEs) of 5s2 Sb3+ ions. Moreover, (MBA)3In99.45%Sb0.55%Cl6 single crystals also exhibit bright orange emission and UV detector signals. These findings will pave the way for the further investigation in efficient CPL and detectors based on lead‐free chiral optoelectronic materials. [ABSTRACT FROM AUTHOR]

A low‐thermal‐budget fabrication approach is developed to realize high‐performance fluorine‐doped indium oxide (In2O3:F) thin‐film transistors (TFTs) with remarkable bias‐stress stability. The ultrathin transistor channel layer is prepared by a re‐developed atomic layer deposition (ALD) process of using cyclopentadienyl indium(I) (InCp) and O2 plasma to deposit a crystalline In2O3 film, followed by a new fluorine doping strategy to use CF4 plasma to afford the In2O3:F layer. As revealed by the density functional theory (DFT) analysis, the fluorine doping can stabilize the lattice oxygen and electrically passivate the problematic VO defects in In2O3 by forming the FOFi spectator defects. Therefore, the fabricated In2O3:F TFTs show simultaneously excellent electrical performance and remarkable bias‐stress stability, with high µFE of 35.9 cm2 V−1 s−1, positive Vth of 0.36 V, steep SS of 94.3 mV dec−1, small hysteresis of 33 mV, and small ΔVth of −111 and 49 mV under NBS and PBS, respectively. This work demonstrates the high promise of the fluorinated ALD In2O3:F TFTs for the CMOS back‐end‐of‐line (BEOL) compatible technologies toward advanced monolithic 3D integration. [ABSTRACT FROM AUTHOR]

The ternary solid solution Na2Ga7−xInx (x≤0.25) was synthesized by annealing the elements at 300 °C in sealed Ta ampoules. Differential thermal analysis (DTA) indicated incongruent phase formation. The peritectic temperature ranges from 501(2) °C (x=0) to 474(2) °C (x=0.25). In addition, the unit cell parameters increase significantly with In content. At its maximum of x=0.25, the unit cell volume increases by 1 % compared to Na2Ga7. The In positions are deduced from single‐crystal X‐ray diffraction data obtained for the composition Na2Ga6.95In0.05 (space group Pnma; Z=8; a=14.876(3) Å, b=8.688(2) Å, c=11.605(4) Å). In the crystal structure of Na2Ga7, which consists of Ga12 icosahedra and 4‐bonded Ga atoms, the In atoms solely substitute the latter. The Na atoms are located in the channels and cavities of the framework. The phase is electron‐precise and can be considered a Zintl‐Wade compound with the formula unit [Na+]16[(12b)Ga122−]4[(4b)Ga−]7.6[(4b)In−]0.4. [ABSTRACT FROM AUTHOR]

The burgeoning field of semiconductor‐mediated organic conversion is of paramount significance, with zinc indium sulfide (ZnIn2S4) emerging as a standout candidate owing to its benign nature, optimal bandgap, extensive light absorption spectrum, remarkable physicochemical properties, and straightforward synthesis. This review examines the latest breakthroughs and the trajectory of ZnIn2S4‐based photocatalysts in the realm of selective organic transformation. We start with a distinct overview of the intrinsic physical attributes of ZnIn2S4 and the underlying mechanisms driving its efficacy in photocatalytic organic transformations. Subsequently, the preparation methods of ZnIn2S4 are summarized. The main focus is the state‐of‐the‐art photocatalytic application of various ZnIn2S4‐based photocatalysts, such as redox reactions, the construction of C−C, C−S and S−S bonds, and the cleavage of C−O, C−C, and C=C bonds. In the conclusion part, we provide our perspectives on the prospective advancements and the remaining challenges that lie ahead in the optimization of ZnIn2S4‐based photocatalysts, with the ultimate goal of enhancing their efficacy for a diverse array of photosynthetic applications. It is anticipated to inspire the strategic engineering of ZnIn2S4 and other semiconductor‐based photocatalysts for various artificial photosynthesis reactions. [ABSTRACT FROM AUTHOR]

In present work the properties of iron-doped indium tin oxide (ITO) films with reduced to 50 mass% indium oxide content prepared by co-sputtering of ITO and Fe2O3 targets and ITO and Fe3O4 targets in mixed argon–oxygen atmosphere were studied by various methods. The influence of different working gas flow rates, RF power of iron oxide targets, type of doping oxide and heat treatment temperatures on the electrical, optical, structural, and morphological properties of the films was characterized by means of four-point probe method, ultraviolet–visible (UV–Vis) spectroscopy, X-ray diffraction and atomic force microscopy. [ABSTRACT FROM AUTHOR]

Green chemistry strives for sustainability at the molecular level and is gaining increasing relevance in the development of chemical reactions. The haloalkynylation reaction is a highly atom–economical C−C coupling reaction that was previously only achieved using transition metal catalysts. It enables the introduction of an alkyne unit and a halogen atom into the target molecule. Herein, we present a haloalkynylation reaction catalyzed by indium(III) halides. The use of indium(III) bromide as a catalyst leads exclusively to the cis addition products with yields up to 86 %. In addition, iodoacetylenes can be applied for the first time for the haloalkynylation reaction of internal alkynes which is an important step forward in the development of industrially relevant and sustainable catalysts. In contrast to gold catalysis, which proceeds via a similar mechanism, the use of alkyl‐substituted haloacetylenes as reagents is also possible. Based on 13C labeling experiments and quantum chemical calculations, we postulate two possible mechanisms for the indium(III)‐catalyzed haloalkynylation reactions. [ABSTRACT FROM AUTHOR]

Initially, indium doped SnO2 (In–SnO2) nanoparticles were synthesised, using co-precipitation technique which then utilised to produce Indium doped SnO2/Polyaniline (In–SnO2/PANi) nanocomposites using in-situ polymerisation. The as-synthesised nanocomposites were found to be selective towards sensing of dimethyl methyl phosphonate (DMMP) gas. The influence of doping on structural, optical, thermal stability, morphology and shape were investigated using XRD, FT-IR, FE-SEM, XPS and EDS. The concentration of doping was optimised for maximum gas response. Furthermore, the gas sensing experiment was executed at various humidity levels. 9@ISP nanocomposites show maximal response (85.1%) as compared to pure PANi, pure SnO2, 0@ISP, 3@ISP, 6@ISP, 12@ISP and 15@ISP nanocomposites. For 10 ppm of DMMA gas, response and recovery times were 33.5 and 27.1 s, respectively. As the DMMP gas concentration rises from 1 to 25 ppm, reaction to gas sensors was found to be increased. DMMP gas shows enhanced selectivity towards 9@ISP nanocomposite as compared to the other gases (xylene, toluene, benzene, and acetonitrile gas). The reproducibility study of 9@ISP nanocomposite was performed for 30 days and found to be impressive. [ABSTRACT FROM AUTHOR]

Indium (In) is a critical metal in liquid-crystal displays and solar panels. The Earth's crust has low In concentration in the order of 10 ng g−1, but it may be concentrated in sulphides by up to six orders of magnitude. Although In isotope studies may improve our understanding of the behaviour of In during different geological processes, such studies are limited for terrestrial samples. Here, we report a new method for In purification and high-precision isotope analysis for chemically different standards. A one-column method was used to separate In from the matrix with a recovery of 98% ± 2% (2SD). Indium concentrations and isotopic compositions were determined using the column eluate, and the results show large In isotope fractionation on desorbing In from the resin. Based on the mass balance, no significant In isotope fractionation was observed when In recovery is >93.8%. In terms of precision and accuracy of In isotopic compositions, the Ag-doping method was likely better than the standard–sample bracketing (SSB) method for correction of instrumental fractionation, with In uptake concentration down to 1 ng g−1 during isotope analysis. To ensure the accuracy of isotope analyses, the concentration match between the sample and standard should be within ±30%. An elemental doping study indicated that Na, K, Te, Sb, Pb, and Cu have no impact on the accuracy of In isotope analysis within the designated range; however, Ca/In, Mg/In, Cd/In and Sn/In ratios of >5, >20, >0.001 and >0.1, respectively, in sample solutions have significant impacts on In isotope analyses. Four international standards (BCR-2 basalt; J-Zn-1 sulphide; NIST-2711a soil; and OU-3 granite) and three in-house igneous rocks, purified using the developed method, had negligible isobaric interferences and matrix effect during In isotope analysis, demonstrating that the method can be used for terrestrial samples with different compositions. [ABSTRACT FROM AUTHOR]

We have examined the influence of bump shape and bonding pressure on low-temperature electrical properties of indium bump connections including superconducting transition temperature, normal state resistance, and superconducting critical current. We describe our test structures, bonding process, and methods of characterization. At temperatures below 1 K, we observe critical currents greater than 70 mA for indium bump connections with a nominal bump size of 17 µm × 17 µm. [ABSTRACT FROM AUTHOR]

Aqueous trivalent metal batteries represent a compelling candidate for energy storage due to the intriguing three‐electron transfer reaction and the distinct properties of trivalent cations. However, little research progress has been achieved with trivalent batteries due to the inappropriate redox potentials and drastic ion hydrolysis side reactions. Herein, the appealing yet underrepresented trivalent indium is selected as an advanced metal choice and the crucial effect of substrate on its plating mechanism is revealed. When copper foil is used, an indiophilic indium‐copper alloy interface can be formed in situ upon plating, exhibiting favorable binding energies and low diffusion energy barriers for indium atoms. Consequently, a planar, smooth, and dense indium metal layer is uniformly deposited on the copper substrate, leading to outstanding plating efficiency (99.8–99.9%) and an exceedingly long lifespan (6.4–7.4 months). The plated indium anode is further paired with a high‐mass‐loading Prussian blue cathode (2 mAh cm−2), and the full cell (negative/positive electrode capacity, N/P = 2.5) delivers an excellent cycling life of 1000 cycles with 72% retention. This work represents a significant advancement in the development of high‐performance trivalent metal batteries. [ABSTRACT FROM AUTHOR]

There is an increasing demand to improve battery safety and performance as part of the global push to convert the small electronics and transportation sector to infrastructures based on electricity. This work follows the deposition of lithium metal in anode‐less conditions by an operando optical microscope using a transparent indium tin oxide‐polyethylene terephthalate (ITO‐PET) window as the current collector in a readily‐available electrochemical set‐up. The mechanism of Li metal nucleation strongly depends on the selected current densities (C/40 and 2C). After the deposition of the solid electrolyte interface (SEI), Li nucleates from mossy to needle morphology. Moreover, layer‐by‐layer growth of dead Li in voids is monitored by following its accumulation upon cycling. Dead Li deposits in residual hollow structures, especially when high current densities are applied. These optical observations are coupled with computer vision analyses to evaluate the average size of the Li deposits: smaller Li nuclei plate when high C‐rate is applied. The results here described provide insights into a new electrochemical cell concept that enables to elucidate the influence of spatial inhomogeneities of the lithophilic ITO‐PET surface on the mechanism of Li nucleation and plating. [ABSTRACT FROM AUTHOR]

Ever‐increasing emissions of anthropogenic carbon dioxide (CO2) cause global environmental and climate challenges. Inspired by biological photosynthesis, developing effective strategies NeuNlto up‐cycle CO2 into high‐value organics is crucial. Electrochemical CO2 reduction reaction (CO2RR) is highly promising to convert CO2 into economically viable carbon‐based chemicals or fuels under mild process conditions. Herein, mesoporous indium supported on multi‐walled carbon nanotubes (mp‐In@MWCNTs) is synthesized via a facile wet chemical method. The mp‐In@MWCNTs electrocatalysts exhibit high CO2RR performance in reducing CO2 into formate. An outstanding activity (current density −78.5 mA cm−2), high conversion efficiency (Faradaic efficiency of formate over 90%), and persistent stability (~30 h) for selective CO2‐to‐formate conversion are observed. The outstanding CO2RR process performance is attributed to the unique structures with mesoporous surfaces and a conductive network, which promote the adsorption and desorption of reactants and intermediates while improving electron transfer. These findings provide guiding principles for synthesizing conductive metal‐based electrocatalysts for high‐performance CO2 conversion. [ABSTRACT FROM AUTHOR]

Indium nitride (InN) is an interesting material for future electronic and photonic-related applications, as it combines high electron mobility and low-energy band gap for photoabsorption or emission-driven processes. In this context, atomic layer deposition techniques have been previously employed for InN growth at low temperatures (typically <350 °C), reportedly yielding crystals with high quality and purity. In general, this technique is assumed to not involve any gas phase reactions as a result from the time-resolved insertion of volatile molecular sources into the gas chamber. Nonetheless, such temperatures could still favor the precursor decomposition in the gas phase during the In half-cycle, therefore altering the molecular species that undergoes physisorption and, ultimately, driving the reaction mechanism to pursue other pathways. Thence, we herein evaluate the thermal decomposition of relevant In precursors in the gas phase, namely, trimethylindium (TMI) and tris(N,N′-diisopropyl-2-dimethylamido-guanidinato) indium (III) (ITG), by means of thermodynamic and kinetic modeling. According to the results, at T = 593 K, TMI should exhibit partial decomposition of ∼8% after 400 s to first generate methylindium and ethane (C2H6), a percentage that increases to ∼34% after 1 h of exposure inside the gas chamber. Therefore, this precursor should be present in an intact form to undergo physisorption during the In half-cycle of the deposition (<10 s). On the other hand, the ITG decomposition starts already at the temperatures used in the bubbler, in which it slowly decomposes as it is evaporated during the deposition process. At T = 300 °C, the decomposition is a fast process that reaches 90% completeness after 1 s and where equilibrium, at which almost no ITG remains, is achieved before 10 s. In this case, the decomposition pathway is likely to occur via elimination of the carbodiimide ligand. Ultimately, these results should contribute for a better understanding of the reaction mechanism involved in the InN growth from these precursors. [ABSTRACT FROM AUTHOR]

Whispering gallery mode resonators (WGMRs) have garnered significant interest due to their potential applications in the fields of electro-optic modulation and microwave to optical photon conversion. In this study, we have leveraged an electro-optic crystal, lead indium niobate-lead magnesium niobate-lead titanate (PIN-PMN-PT), to fabricate a high-quality WGMR. Our investigation revealed that the crystal composition used in this work is 0.24PIN-0.45PMN-0.31PT, and each element of the whole sample is homogeneously distributed. The dielectric properties of the sample revealed the necessity of limiting the temperature and external electric field frequency to below 100 °C and 106 Hz, respectively. The obtained optical quality factor value (Q value) of the resonator is ∼0.7 × 105. Impressively, our resonator could be conveniently tuned by exploiting the enormous inverse piezoelectric effect d31 of the crystal, thereby alleviating the need for precise fabrication. Furthermore, a theoretical analysis of our resonator revealed that a calculated resonance wavelength shift is within a broad range of 2.16 nm. Intriguingly, if the surface roughness of the resonator is reduced tenfold, we can increase the calculated Q value dependent on surface scattering by 104. Our finding showcases the tremendous potential of the PIN-PMN-PT crystal-based WGMR as versatile building blocks for a variety of applications in the burgeoning field of photonic technology. [ABSTRACT FROM AUTHOR]

We successfully decorated metallic 1T phase WS 2 (1T-WS 2) on the surface of ZnIn 2 S 4 and investigated the synergistic effect of 1T-WS 2 on ZnIn 2 S 4. Under simulated solar irradiation, the optimal hydrogen production rate of 1T-WS 2 /ZnIn 2 S 4 reaches 30.90 mmol/h g−1, which is 3.38 times higher than that of single ZnIn 2 S 4. [Display omitted] Improving the separation efficiency of carriers is an important part of enhancing photocatalytic activity. Herein, we successfully decorated metallic 1T phase tungsten disulfide (1T-WS 2) on the surface of zinc indium sulfide (ZnIn 2 S 4) and investigated the synergistic effect of 1T-WS 2 on ZnIn 2 S 4. The characterization results show that 1T-WS 2 improves the light absorption capacity and utilization efficiency, increases the catalytic active site, improves the photogenerated charge separation efficiency, and optimizes the reduction potential of ZnIn 2 S 4. Theoretical calculations show that compared with ZnIn 2 S 4 , 1T-WS 2 /ZnIn 2 S 4 has a smaller adsorption Gibbs free energy of the intermediate state H*, which is conducive to the catalytic reaction. Under simulated solar irradiation, the hydrogen (H 2) production rate of 1T-WS 2 /ZnIn 2 S 4 with a loading of 12 wt% reaches 30.90 mmol h−1 g−1, which is 3.38 times higher than that of single ZnIn 2 S 4 (9.13 mmol h−1 g−1). In addition, the apparent quantum efficiency of 1T-WS 2 /ZnIn 2 S 4 with a loading of 12 wt% reaches 21.14 % under monochromatic light at a wavelength of λ = 370 nm. This work analyzes the light absorption and carrier separation to the catalytic site, and elucidates the mechanism for the enhancement of the photocatalytic hydrogen production performance. [ABSTRACT FROM AUTHOR]