1. Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes
- Author
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Barkad, H A, Soltani, A, Mattalah, M, Gerbedoen, J-C, Rousseau, M, De Jaeger, J-C, BenMoussa, A, Mortet, V, Haenen, K, Benbakhti, B, DEEE, 4, Building, Rankine, Oakfield Avenue, Moreau, M, Dupuis, R, Ougazzaden, A, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Royal Observatory of Belgium [Brussels] (ROB), Institute for Materials Research, IMEC vzw, Division IMOMEC, University of Glasgow, Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Department of Electrical and Electronic Engineering [London] (DEEE), Imperial College London, Laboratoire Avancé de Spectroscopie pour les Intéractions la Réactivité et l'Environnement - UMR 8516 (LASIRE), Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS), Georgia Institute of Technology [Atlanta], and Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
- Subjects
Materials science ,Acoustics and Ultrasonics ,Orders of magnitude (temperature) ,Schottky barrier ,chemistry.chemical_element ,02 engineering and technology ,7. Clean energy ,01 natural sciences ,law.invention ,[SPI]Engineering Sciences [physics] ,Responsivity ,Optics ,law ,0103 physical sciences ,Photodiodes ,AlN ,010302 applied physics ,business.industry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Photodiode ,deep UV ,chemistry ,Sapphire ,0210 nano-technology ,business ,Tin ,Simulation ,DC bias ,Dark current - Abstract
Deep-ultraviolet solar-blind photodiodes based on high-quality AlN films grown on sapphire substrates with a metal–semiconductor–metal configuration were simulated and fabricated. The Schottky contact is based on TiN metallization. The material is characterized by the micro-Raman spectroscopy and x-ray diffraction technique. The detector presents an extremely low dark current of 100 fA at −100 V dc bias for large device area as high as 3.1 mm2. It also exhibits a rejection ratio between 180 and 300 nm of three orders of magnitude with a very sharp cut-off wavelength at 203 nm (∼6.1 eV). The simulation to optimize the photodiode topology is based on a 2D energy-balance model using the COMSOL® software. Simulation performed for different spacing for a given bias between electrodes show that a compromise must be found between the dark current and the responsivity for the optimization of the device performance. The measurement results are in good agreement with the model predictions.
- Published
- 2010
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