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26 results on '"Hyung-Gon Shin"'

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1. Investigation of Surface Quality for Minor Scale Diameter of Biodegradable Magnesium Alloys during the Turning Process Using a Different Tool Nose Radius

2. Sensor-Embedded Automatic Grasping Forceps for Precise Corneal Suture in Penetrating Keratoplasty

9. Corneal Suturing Robot Capable of Producing Sutures With Desired Shape for Corneal Transplantation Surgery

10. High-Performance van der Waals Junction Field-Effect Transistors Utilizing Organic Molecule/Transition Metal Dichalcogenide Interface

11. Investigation of Surface Roughness and Resulting Cutting Force for Dry Turning Operation of Different Types of Material Using CVD Coating Carbide Tool

12. Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two-Dimensional WSe2/MoTe2 Stack Channel

13. Investigation of Surface Quality for Minor Scale Diameter of Biodegradable Magnesium Alloys during the Turning Process Using a Different Tool Nose Radius

14. Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two-Dimensional WSe

15. Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides

16. Development of Sunlight LED Bollard Based on C/GFRP Floodlight Composite

17. Dynamic Oscillation via Negative Differential Resistance in Type III Junction Organic/Two‐Dimensional and Oxide/Two‐Dimensional Transition Metal Dichalcogenide Diodes

18. Insertion-depth sensor embedded automatic grasping forceps for precise cornea grasping in keratoplasty

19. Vertical and In-Plane Current Devices Using NbS

20. Investigation Into the Drilling Characteristics of Carbon Fiber Reinforced Plastic (CFRP) with Variation of the Stacking Sequence Angle

21. A Study on the Cutting Characteristics and Detection of the Abnormal Tool State in Turning of Ti-6Al-4V ELI

22. Ophthalmic microsurgical motion and suture shape evaluation using Optical Coherence Tomography

23. A Study on Surface Integrity in Hard Turning

24. Metal Semiconductor Field Effect Transistors with Conducting NbS2/n-MoS2 Van Der Waals Schottky Junction and Graphene Contact

25. Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact.

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