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A low concentration bisalt electrolyte that provides robust and conductive solid/cathode electrolyte interphase layers in lithium metal batteries.

This article is about how language teachers can use Padlet to facilitate discussions and learning through research and collaboration.

Monolayer transition metal dichalcogenides (TMDs) with a direct band gap are suitable for various optoelectronic applications such as ultrathin light emitters and absorbers. However, their weak light absorption caused by the atomically thin layer hinders more versatile applications for high optical gains. Although plasmonic hybridization with metal nanostructures significantly enhances light-matter interactions, the corrosion, instability of the metal nanostructures, and the undesired effects of direct metal-semiconductor contact act as obstacles to its practical application. Herein, we propose a dielectric nanostructure for plasmon-enhanced light-matter interaction of TMDs. TiO

We study the electronic and optoelectronic properties of a broken-gap heterojunction composed of SnSe2 and MoTe2 with gate-controlled junction modes. Owing to the interband tunneling current, our device can act as an Esaki diode and a backward diode with a peak-to-valley current ratio approaching 5.7 at room temperature. Furthermore, under an 811 nm laser irradiation the heterostructure exhibits a photodetectivity of up to 7.5 × 1012 Jones. In addition, to harness the electrostatic gate bias, Voc can be tuned from negative to positive by switching from the accumulation mode to the depletion mode of the heterojunction. Additionally, a photovoltaic effect with a fill factor exceeding 41% was observed, which highlights the significant potential for optoelectronic applications. This study not only demonstrates high-performance multifunctional optoelectronics based on the SnSe2/MoTe2 heterostructure but also provides a comprehensive understanding of broken-band alignment and its applications.

The degradation of organic–inorganic hybrid perovskite (OHP) films is a crucial issue in OHP optoelectronics. Herein, we investigate the degradation process of OHP films by simultaneous measurement...

Thermogels have been extensively utilized as one of representative in situ forming hydrogel systems for biomedical applications. However, most thermogels often suffer from a weak mechanical strength and low physical stability. To overcome these intrinsic weaknesses of conventional thermogels, we developed a new in situ crosslinkable thermogel system with enhanced and tunable physicochemical properties. Thermosensitive N-hexanoyl glycol chitosans (HGCs) were synthesized by N-hexanoylation of glycol chitosan and further modified to yield methacrylated HGCs (M-HGCs) and thiolated HGCs (SH-HGCs). A mixture of M-HGCs and SH-HGCs (M/SH-HGCs) retained not only their thermogelling properties but also their reactive functionalities for chemical crosslinking at physiological temperature. Compared to conventional thermogels, the M/SH-HGC thermogels showed enhanced mechanical properties due to physical and chemical crosslinking mechanisms. The physicochemical properties of the M/SH-HGC thermogels were characterized in terms of the sol–gel transition temperature, gelation time, mechanical strength, and biodegradability. They showed negligible toxicity in cells, and the in situ crosslinking step did not affect cell viability. These results suggest that our crosslinkable thermogel system is useful not only as a new in situ forming hydrogel but also as a biomaterial for various biomedical applications due to its thermogelling characteristics and enhanced and tunable physicochemical properties.

The instability of van der Waals (vdW) materials leads to spontaneous morphological and chemical transformations in the air. Although the passivation of vdW materials with other resistive materials is often used to solve stability issues, this passivation layer can block carrier injection and thus interfere with charge transfer doping. In this study, a facile method is proposed for n-doping and mediation of Se vacancies in tungsten diselenide (WSe2) by poly(vinylpyrrolidone) (PVP) coating. The major carrier type of the PVP-coated WSe2-based field-effect transistor (FET) was converted from hole (p-type) to electron (n-type). Furthermore, the vacancy-induced interface trap density was reduced by approximately 500 times. This study provides a practical doping and passivation method for the van der Waals materials, as well as a comprehensive understanding of the chemical reaction and electronic transport in these materials.

We demonstrated an effective poly(p-chloro-xylylene) (Parylene-C) encapsulation method for MAPbI3 solar cells. By structural and optical analysis, we confirmed that Parylene-C efficiently slowed the decomposition reaction in MAPbI3. From a water permeability test with different encapsulating materials, we found that Parylene-C-coated MAPbI3 perovskite was successfully passivated from reaction with water, owing to the hydrophobic behavior of Parylene-C. As a result, the Parylene-C-coated MAPbI3 solar cells showed better device stability than uncoated cells, virtually maintaining the initial power conversion efficiency value (15.5 ± 0.3%) for 196 h.

Methylammonium lead halide (MAPbI3) perovskites are considered as promising materials owing to their excellent optical and electrical properties. However, perovskite materials suffer from degradation in air, which limits their practical applications. Here, we demonstrate successful passivation of the MAPbI3 photodetectors through monochloro-para-xylylene (Parylene-C) deposition. The time-dependent photocurrent characteristics were systematically investigated, and we achieved significantly improved device performance and stability with Parylene-C passivation. Based on the excitation-power-dependent photoluminescence (PL) data, we confirmed that Parylene-C can reduce the carrier losses in MAPbI3, leading to the enhancement of photocurrent and PL in MAPbI3 photodetectors.

Li metal batteries (LMBs) are ideal candidates for future high-energy-density battery systems. To date, high-voltage LMBs suffer severe limitations because of electrolytes unstable against Li anodes and high-voltage cathodes. Although ether-based electrolytes exhibit good stability with Li metal, compared to carbonate-based electrolytes, they have been used only in ≤4.0 V LMBs because of their limited oxidation stability. Here, a high concentration electrolyte (HCE) comprising lithium bis(fluorosulfonyl)imide (LiFSI) and a weakly solvating solvent (1,2-diethoxyethane, DEE) is designed, which can regulate unique solvation structures with only associated complexes at relatively lower concentration compared to the reported HCEs. This effectively suppresses dendrites on the anode side, and preserves the structural integrity of the cathode side under high voltages by the formation of stable interfacial layers on a Li metal anode and LiNi

We study the electronic and optoelectronic properties of a broken-gap heterojunction composed of SnSe

Background Mucoadhesive polymers, which may increase the contact time between the polymer and the tissue, have been widely investigated for pharmaceutical formulations. In this study, we developed a new polysaccharide-based mucoadhesive polymer with thermogelling properties. Methods Hexanoyl glycol chitosan (HGC), a new thermogelling polymer, was synthesized by the chemical modification of glycol chitosan using hexanoic anhydride. The HGC was further modified to include thiol groups to improve the mucoadhesive property of thermogelling HGC. The degree of thiolation of the thiolated HGCs (SH-HGCs) was controlled in the range of 5–10% by adjusting the feed molar ratio. The structure of the chemically modified polymers was characterized by 1H NMR and ATR-FTIR. The sol-gel transition, mucoadhesiveness, and biocompatibility of the polymers were determined by a tube inverting method, rheological measurements, and in vitro cytotoxicity tests, respectively. Results The aqueous solution (4 wt%) of HGC with approximately 33% substitution showed a sol-gel transition temperature of approximately 41 °C. SH-HGCs demonstrated lower sol-gel transition temperatures (34 ± 1 and 31 ± 1 °С) compared to that of HGC due to the introduction of thiol groups. Rheological studies of aqueous mixture solutions of SH-HGCs and mucin showed that SH-HGCs had stronger mucoadhesiveness than HGC due to the interaction between the thiol groups of SH-HGCs and mucin. Additionally, we confirmed that the thermogelling properties might improve the mucoadhesive force of polymers. Several in vitro cytotoxicity tests showed that SH-HGCs showed little toxicity at concentrations of 0.1–1.0 wt%, indicating good biocompatibility of the polymers. Conclusions The resultant thiolated hexanoyl glycol chitosans may play a crucial role in mucoadhesive applications in biomedical areas.

Hybrid structures of two-dimensional (2D) materials and quantum dots (QDs) are particularly interesting in the field of nanoscale optoelectronic devices because QDs are efficient light absorbers and can inject photocarriers into thin layers of 2D transition-metal dichalcogenides, which have high carrier mobility. In this study, we present a heterostructure that consists of a monolayer of tungsten diselenide (ML WSe2) covered by nitrogen-doped graphene QDs (N-GQDs). The improved photoluminescence of ML WSe2 is attributed to the dominant neutral exciton emission caused by the n-doping effect. Owing to strong light absorption and charge transfer from N-GQDs to ML WSe2, N-GQD-covered ML WSe2 showed up to 480% higher photoresponsivity than that of a pristine ML WSe2 photodetector. The hybrid photodetector exhibits good environmental stability, with 46% performance retention after 30 days under ambient conditions. The photogating effect also plays a key role in the improvement of hybrid photodetector performanc...

Two-dimensional transition-metal dichalcogenides (TMDCs) are notable materials owing to their flexibility, transparency, and appropriate bandgaps. Because of their unique advantages, TMDC p–n diodes have been studied for next-generation electronics and optoelectronics. However, their efficiency must be increased for commercialization. In this study, we demonstrated a heterostructure composed of few-layer ReS2 and WSe2. This few-layer ReS2/WSe2 heterostructure exhibits a p–n junction and an n–n junction in different gate-bias regimes. In the p–n junction regime, the heterostructure shows outstanding rectification behavior. Additionally, we identify three carrier-transfer mechanisms − direct tunneling, Fowler–Nordheim tunneling, and the space charge region − depending on the drain bias. Furthermore, the photovoltaic effect is observed in this few-layer ReS2/WSe2 heterostructure. As a result, a high fill factor (≈ 0.56), power conversion (≈ 1.5%), and external quantum efficiency (≈ 15.3%) were obtained. This study provides new guidelines for flexible optoelectronic devices.

Recently, organic–inorganic mixed halide perovskite (MAPbX3; MA = CH3NH3+, X = Cl–, Br–, or I–) single crystals with low defect densities have been highlighted as candidate materials for high-efficiency photovoltaics and optoelectronics. Here we report the optical and structural investigations of mixed halide perovskite (MAPbBr3–xIx) single crystals. Mixed halide perovskite single crystals showed strong light soaking phenomena with light illumination conditions that were correlated to the trapping and detrapping events from defect sites. By systematic investigation with optical analysis, we found that the pseudocubic phase of mixed halide perovskites generates light soaking phenomena. These results indicate that photoinduced changes are related to the existence of multiple phases or halide migrations.

Two-dimensional layered transition-metal dichalcogenides have attracted considerable interest for their unique layer-number-dependent properties. In particular, vertical integration of these two-dimensional crystals to form van der Waals heterostructures can open up a new dimension for the design of functional electronic and optoelectronic devices. Here we report the layer-number-dependent photocurrent generation in graphene/MoS2/graphene heterostructures by creating a device with two distinct regions containing one-layer and seven-layer MoS2 to exclude other extrinsic factors. Photoresponse studies reveal that photoresponsivity in one-layer MoS2 is surprisingly higher than that in seven-layer MoS2 by seven times. Spectral-dependent studies further show that the internal quantum efficiency in one-layer MoS2 can reach a maximum of 65%, far higher than the 7% in seven-layer MoS2. Our theoretical modelling shows that asymmetric potential barriers in the top and bottom interfaces of the graphene/one-layer MoS2/graphene heterojunction enable asymmetric carrier tunnelling, to generate usually high photoresponsivity in one-layer MoS2 device., Vertical integration of two-dimensional materials can open unprecedented possibilities towards design of efficient optoelectronic devices. Here, the authors investigate the photoresponse properties of a graphene/MoS2/graphene heterostructure, revealing promising quantum efficiency performances.

We fabricated the stacked bilayer molybdenum disulfide (MoS2) by using reduced graphene oxide (rGO) as a spacer for increasing the optoelectronic properties of MoS2. The rGO can decrease the interlayer coupling between the stacked bilayer MoS2 and retain the direct band gap property of MoS2. We observed a twofold enhancement of the photoluminescence intensity of the stacked MoS2 bilayer. In the Raman scattering, we observed that the E12g and A1g modes of the stacked bilayer MoS2 with rGO were further shifted compared to monolayer MoS2, which is due to the van der Waals (vdW) interaction and the strain effect between the MoS2 and rGO layers. The findings of this study will expand the applicability of monolayer MoS2 for high-performance optoelectronic devices by enhancing the optical properties using a vdW spacer.

We fabricated the stacked bilayer molybdenum disulfide (MoS2) by using reduced graphene oxide (rGO) as a spacer for increasing the optoelectronic properties of MoS2. The rGO can decrease the interlayer coupling between the stacked bilayer MoS2 and retain the direct band gap property of MoS2. We observed a twofold enhancement of the photoluminescence intensity of the stacked MoS2 bilayer. In the Raman scattering, we observed that the E12g and A1g modes of the stacked bilayer MoS2 with rGO were further shifted compared to monolayer MoS2, which is due to the van der Waals (vdW) interaction and the strain effect between the MoS2 and rGO layers. The findings of this study will expand the applicability of monolayer MoS2 for high-performance optoelectronic devices by enhancing the optical properties using a vdW spacer.

Modulation of the carrier concentration and electronic type of monolayer (1L) MoS2 is highly important for applications in logic circuits, solar cells, and light-emitting diodes. Here, we demonstrate the tuning of the electronic properties of large-area 1L-MoS2 using graphene oxide (GO). GO sheets are well-known as hole injection layers since they contain electron-withdrawing groups such as carboxyl, hydroxyl, and epoxy. The optical and electronic properties of GO-treated 1L-MoS2 are dramatically changed. The photoluminescence intensity of GO-treated 1L-MoS2 is increases by more than 470% compared to the pristine sample because of the increase in neutral exciton contribution. In addition, the A1g peak in Raman spectra shifts considerably, revealing that GO treatment led to the formation of p-type doped 1L-MoS2. Moreover, the current vs voltage (I–V) curves of GO-coated 1L-MoS2 field effect transistors show that the electron concentration of 1L-MoS2 is significantly lower in comparison with pristine 1L-MoS...

An unusually large bandgap modulation of 1.23-2.65 eV in monolayer MoS2 on a SiO2 /Si substrate is found due to the inherent local bending strain induced by the surface roughness of the substrate, reaching the direct-to-indirect bandgap transition. Approximately 80% of the surface area reveals an indirect bandgap, which is confirmed further by the degraded photoluminescence compared to that from suspended MoS2 .

Monolayer MoS2 has attracted extensive attention owing to its promising applications in optoelectronic devices. Recently, uniform and highly crystalline monolayer MoS2 was grown through chemical vapor deposition (CVD) using seed materials as a growth promoter. However, residual seed materials can remain on the surface of a monolayer MoS2 flake on a SiO2/Si substrate after growth. Here, we observe drastically increased photoluminescence (PL) intensity at the edge of MoS2 flake where residual particles are attached after repeated laser irradiation. On the other hand, the PL intensity of pure MoS2 remained almost the same. We attribute this to the effect of p-doping of the edge MoS2 by the adsorbed H2O and O2 molecules in the residual particles. The p-doping effect of MoS2 is confirmed by the confocal PL and Raman spectroscopy analysis.

Photoluminescence (PL) from monolayer MoS2 has been modulated using plasma treatment or thermal annealing. However, a systematic way of understanding the underlying PL modulation mechanism has not yet been achieved. By introducing PL and Raman spectroscopy, we analyze that the PL modulation by laser irradiation is associated with structural damage and associated oxygen adsorption on the sample in ambient conditions. Three distinct behaviors were observed according to the laser irradiation time: (i) slow photo-oxidation at the initial stage, where the physisorption of ambient gases gradually increases the PL intensity; (ii) fast photo-oxidation at a later stage, where chemisorption increases the PL intensity abruptly; and (iii) photoquenching, with complete reduction of PL intensity. The correlated confocal Raman spectroscopy confirms that no structural deformation is involved in slow photo-oxidation stage; however, the structural disorder is invoked during the fast photo-oxidation stage, and severe structural degradation is generated during the photoquenching stage. The effect of oxidation is further verified by repeating experiments in vacuum, where the PL intensity is simply degraded with laser irradiation in a vacuum due to a simple structural degradation without involving oxygen functional groups. The charge scattering by oxidation is further explained by the emergence/disappearance of neutral excitons and multiexcitons during each stage.

We investigated the carrier-gas flows-ratio-dependent structure evolution of ZnO submicrostructures grown on a graphene/SiO2/Si substrate without a catalyst or seed layer by using thermal chemical vapor deposition. The surface morphology and the crystalline quality of the ZnO sub-microstructures measured by using field-emission scanning electron microscopy, X-ray diffraction, and Raman spectroscopy showed a clear dependence on the carrier-gas flow ratio. The spatially resolved photoluminescence property of the ZnO structure was investigated by using confocal scanning photoluminescence microscopy, and ZnO grown at an oxygen flow rate of 50 sccm showed relatively good optical properties.

We report the realization of ZnO nanostructures on a graphene/SiO2/Si substrate by using a facile precursor-template synthesis technique through catalyst-free, seed-layer-free chemical vapor deposition. Vertical growth on the graphene buffer layers resulted in highly-oriented ZnO nanorods due to heterogeneous nucleation of the bond-centered sites on graphene. This demonstrates that the morphology of the structures is sensitive to the graphene substrate owing to the strong ZnOgraphene interaction. The photoluminescence exhibited distinctive band-edge emission and defect emission. The defect emission could be largely eradicated by covering the graphene and decreasing the ZnO-graphene spacing.

We modulated the shape of ZnO nanostructures as nanowires, nanospears, nanowalls, and nanorods by varying the distance between the reactant and the substrate during thermal chemicalvapor deposition. Photoluminescence (PL) data show that the optical quality measured by using the PL intensity ratio of band-edge emission to yellow emission is relatively higher under the synthesis condition of nanowalls. The formation characteristics of the ZnO nanostructures are explained by using an analytical model. The model entails a change in the growth mechanism of the ZnO nanostructures caused by a difference in the Zn concentration.

Two-dimensional transition-metal dichalcogenides (TMDCs) are notable materials owing to their flexibility, transparency, and appropriate bandgaps. Because of their unique advantages, TMDC p-n diodes have been studied for next-generation electronics and optoelectronics. However, their efficiency must be increased for commercialization. In this study, we demonstrated a heterostructure composed of few-layer ReS2 and WSe2. This few-layer ReS2/WSe2 heterostructure exhibits a p-n junction and an n-n junction in different gate-bias regimes. In the p-n junction regime, the heterostructure shows outstanding rectification behavior. Additionally, we identify three carrier-transfer mechanisms - direct tunneling, Fowler-Nordheim tunneling, and the space charge region - depending on the drain bias. Furthermore, the photovoltaic effect is observed in this few-layer ReS2/WSe2 heterostructure. As a result, a high fill factor (≈ 0.56), power conversion (≈ 1.5%), and external quantum efficiency (≈ 15.3%) were obtained. This study provides new guidelines for flexible optoelectronic devices.

Adipose-derived mesenchymal stem cells (AD-MSCs) have been studied as desirable cell sources for regenerative medicine and therapeutic application. However, it has still remained a challenge to obtain enough adequate and healthy cells in large quantities. To overcome this limitation, various biomaterials have been used to promote expansion of MSCs in vitro. Recently, hexanoyl glycol chitosan (HGC) was introduced as a new biomaterial for various biomedical applications, in particular 3D cell culture, because of its biodegradability, biocompatibility, and other promising biofunctional properties. In this study, the effect of HGC on the proliferation of AD-MSCs was examined in vitro, and its synergistic effect with basic fibroblast growth factor (bFGF), which has been widely used to promote proliferation of cells, was evaluated. We found that the presence of HGC increased the proliferative capacity of AD-MSCs during long-term culture, even at low concentrations of bFGF. Furthermore, it suppressed the expression of senescence-related genes and improved the mitochondrial functionality. Taken all together, these findings suggest that the HGC demonstrate a potential for sustained growth of AD-MSCs in vitro.

Monolayer (1L) transition metal dichalcogenides (TMDCs) are promising materials for nanoscale optoelectronic devices because of their direct band gap and wide absorption range (ultraviolet to infrared). However, 1L-TMDCs cannot be easily utilized for practical optoelectronic device applications (e.g., photodetectors, solar cells, and light-emitting diodes) because of their extremely low optical quantum yields (QYs). In this investigation, a high-gain 1L-MoS2 photodetector was successfully realized, based on the surface plasmon (SP) of the Ag nanowire (NW) network. Through systematic optical characterization of the hybrid structure consisting of a 1L-MoS2 and the Ag NW network, it was determined that a strong SP and strain relaxation effect influenced a greatly enhanced optical QY. The photoluminescence (PL) emission was drastically increased by a factor of 560, and the main peak was shifted to the neutral exciton of 1L-MoS2. Consequently, the overall photocurrent of the hybrid 1L-MoS2 photodetector was ob...

Hybrid structures of two-dimensional (2D) materials and quantum dots (QDs) are particularly interesting in the field of nanoscale optoelectronic devices because QDs are efficient light absorbers and can inject photocarriers into thin layers of 2D transition-metal dichalcogenides, which have high carrier mobility. In this study, we present a heterostructure that consists of a monolayer of tungsten diselenide (ML WSe

International audience; We propose a semiconductor–insulator–semiconductor (SIS) heterojunction diode consisting of monolayer (1-L) MoS2, hexagonal boron nitride (h-BN), and epitaxial p-GaN that can be applied to high-performance nanoscale optoelectronics. The layered materials of 1-L MoS2 and h-BN, grown by chemical vapor deposition, were vertically stacked by a wet-transfer method on a p-GaN layer. The final structure was verified by confocal photoluminescence and Raman spectroscopy. Current–voltage (I–V) measurements were conducted to compare the device performance with that of a more classical p–n structure. In both structures (the p–n and SIS heterojunction diode), clear current-rectifying characteristics were observed. In particular, a current and threshold voltage were obtained for the SIS structure that was higher compared to that of the p–n structure. This indicated that tunneling is the predominant carrier transport mechanism. In addition, the photoresponse of the SIS structure induced by the illumination of visible light was observed by photocurrent measurements.

We report the synthesis of centimeter-scale monolayer WS2 on gold foil by chemical vapor deposition. The limited tungsten and sulfur solubility in gold foil allows monolayer WS2 film growth on gold surface. To ensure the coverage uniformity of monolayer WS2 film, the tungsten source-coated substrate was placed in parallel with Au foil under hydrogen sulfide atmosphere. The high growth temperature near 935 °C helps to increase a domain size up to 420 μm. Gold foil is reused for the repeatable growth after bubbling transfer. The WS2-based field effect transistor reveals an electron mobility of 20 cm(2) V(-1) s(-1) with high on-off ratio of ∼10(8) at room temperature, which is the highest reported value from previous reports of CVD-grown WS2 samples. The on-off ratio of integrated multiple FETs on the large area WS2 film on SiO2 (300 nm)/Si substrate shows within the same order, implying reasonable uniformity of WS2 FET device characteristics over a large area of 3 × 1.5 cm(2).

We investigated the spatial distribution of light emission from InGaN/GaN light-emitting diodes (LEDs) fabricated on lens-shaped patterns (LSPs) by using confocal scanning electroluminescence microscopy (CSM). From three-dimensional CSM images measured by varying the position of the focal plane of a detector, the luminescence profiles from the InGaN/GaN LEDs were significantly changed with respect to the position of the LSP itself. In addition, it the EL intensity around the boundary region of the single LSP was found to fluctuate periodically with the distance of 671 nm between the adjacent bright patterns. From the simple theoretical analysis, the periodic fluctuation around the boundary of every single pattern in the CSM images is attributed to interference effects due to periodically-positioned LSPs.

International audience; his paper reports on the integration of freestanding transition metal dichalcogenides (TMDs). Monolayer (1‐L) MoS2, WS2, and WSe2 as representative TMDs are transferred on ZnO nanorods (NRs), used here as nanostructured substrates. The photoluminescence (PL) spectra of 1‐L TMDs on NRs show a giant PL intensity enhancement, compared with those of 1‐L TMDs on SiO2. The strong increases in Raman and PL intensities, along with the characteristic peak shifts, confirm the absence of stress in the TMDs on NRs. In depth analysis of the PL emission also reveals that the ratio between the exciton and trion peak intensity is almost not modified after transfer. The latter shows that the effect of charge transfer between the 1‐L TMDs and ZnO NRs is here negligible. Furthermore, confocal PL and Raman spectroscopy reveal a fairly consistent distribution of PL and Raman intensities. These observations are in agreement with a very limited points contact between the support and the 1‐L TMDs. The entire process reported here is scalable and may pave the way for the development of very efficient ultrathin optoelectronics.

Objectives: This study aims to investigate the halitosis increase after solid and liquid food intake, and to determine the type of food that aggravates halitosis. Methods/Statistical Analysis: A total of 60 healthy women filled out the survey questionnaire. Their normal halitosis levels and the levels after food intake were also measured using a Bad Breath (B/B) checker, and these were then compared. Findings: The survey revealed that the food that was expected to most likely increase halitosis was coffee mix (75%). On the other hand, the intraoral gas (OG) measurement using a B/B checker revealed that the food that increased halitosis the most after intake was cola, followed by coffee mix, orange juice, candy, chocolate bar, and gum, in that order. The study results showed that the halitosis increased the most after cola intake, and that liquid foods caused more halitosis than solid foods. Improvements/Applications: The study results showed that liquid foods caused more severe halitosis than solid foods. Therefore, it is recommended that solid foods be preferred to liquid foods to reduce halitosis.

Objectives: This study aimed to provide basic data for the improvement and management of the oral health awareness and oral-health-related quality of life of immigrant women in multicultural families. Methods/Statistical Analysis: This study targeted a total of 130 immigrant women in multicultural families who participated in the South Korean society adaptation programs at the multicultural family centers. The direct interview methods were used, and a questionnaire translation for each of the subjects’ countries of origin was prepared so that the subjects can answer the questionnaires by themselves. The collected data was used the SPSS 19.0 (ver) statistical program. Findings: The subject immigrant women in multicultural families in this study were aware of the importance of oral health depending on whether or not they visited a dental clinic after their migration, but even though their migration period was long, as their opportunity to receive education through oral-health-related programs was limited, there were very few persons who received such education. In addition, for the path through which they obtained oral-health-related knowledge, the mass media was the most common. This means that it is difficult for people with economic difficulties to access the oral care institutions in South Korea; thus, the probability that they will obtain unverified related knowledge through the mass media and not through professional education is high. Improvements/Applications: Establishment of oral healthcare programs for immigrant women in multicultural families and regional linkage between the multicultural centers and the health centers and dental clinics are urgently needed.

Modulation of the carrier concentration and electronic type of monolayer (1L) MoS