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As interest in transparent electronics increases, ensuring the reliability of transparent RRAM (T-RRAM) devices, which can be used to construct transparent electronics, has become increasingly important. However, defects and traps within these T-RRAM devices can degrade their reliability. In this study, we investigated the improvement of transparency and reliability of T-RRAM devices with an AZO/HfO2/Ti structure through rapid thermal annealing (RTA) at 450 °C for 60 s in a nitrogen atmosphere. The device without RTA exhibited a low transmittance of 30%, whereas the device with RTA showed a significantly higher transmittance of over 75%. Furthermore, the device operated at lower current levels after RTA, which resulted in a reduction in its operating voltages, and the forming, setting, and reset voltages changed from 3.3, 2.4, and −5.1 V, respectively, to 2, 1, and −2.7 V. This led to an improvement in the endurance characteristics of the device, which thereby suggests that these improvements can be attributed to a reduction in the defects and trap density within the T-RRAM device caused by RTA. [ABSTRACT FROM AUTHOR]

In this paper, we optimized IGZO/Ag/IGZO (IAI) multilayer films by post-rapid thermal annealing (RTA) to enhance the electrical conductivity and optical transmittance in visible wavelengths for solar cell applications. Our optimized device showed an average transmittance of 85% in the visible range, with a lowest sheet resistance of 6.03 Ω/□ when annealed at 500 °C for 60 s. Based on these results, we assessed our device with photo-generated short circuit current density (JSC) using a solar cell simulator to confirm its applicability in the solar cell. IAI multilayer RTA at 500 °C for 60 s showed a highest JSC of 40.73 mA/cm2. These results show that our proposed IAI multilayer film, which showed a high optical transparency and electrical conductivity optimized with post RTA, seems to be excellent transparent electrode for solar cell applications. [ABSTRACT FROM AUTHOR]