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The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electrostatic field simulations and Monte Carlo methods. This paper presents the guiding principles of such simulations, using a CMOS pixel sensor with a small collection electrode and a high-resistivity epitaxial layer as an example. The full simulation workflow is described, along with possible pitfalls and how to avoid them. For commercial CMOS processes, detailed doping profiles are confidential, but the presented method provides an optimisation tool that is sufficiently accurate to investigate sensor behaviour and trade-offs of different sensor designs without knowledge of proprietary information. The workflow starts with detailed electric field finite element method simulations in TCAD, using generic doping profiles. Examples of the effect of varying different parameters of the simulated sensor are shown, as well as the creation of weighting fields, and transient pulse simulations. The fields resulting from TCAD simulations can be imported into the Allpix Squared Monte Carlo simulation framework, which enables high-statistics simulations, including modelling of stochastic fluctuations from the underlying physics processes of particle interaction. Example Monte Carlo simulation setups are presented and the different parts of a simulation chain are described. Simulation studies from small collection electrode CMOS sensors are presented, and example results are shown for both single sensors and multiple sensors in a test beam telescope configuration. The studies shown are those typically performed on sensor prototypes in test beam campaigns, and a comparison is made to test beam data, showing a maximum deviation of 4% and demonstrating that the approach is viable for generating realistic results., Comment: 22 pages, 25 figures, submitted to Nuclear Instruments and Methods in Physics Research, Section A

Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: doping levels, pixel geometries and pixel pitches (10-25 $\mu$m). These variants have been tested following exposure to varying levels of irradiation up to 3 MGy and $10^{16}$ 1 MeV n$_\text{eq}$ cm$^{-2}$. Here the results from prototypes that feature direct analogue output of a 4$\times$4 pixel matrix are reported, allowing the systematic and detailed study of charge collection properties. Measurements were taken both using $^{55}$Fe X-ray sources and in beam tests using minimum ionizing particles. The results not only demonstrate the feasibility of using this technology for particle detection but also serve as a reference for future applications and optimisations.

Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF, granting a high signal-to-noise ratio and low power consumption. Additionally, the 65 nm CMOS imaging technology brings a reduction in material budget and improved logic density of the readout circuitry, compared to previously studied technologies. Given these features, this technology was chosen by the TANGERINE project to develop the next generation of silicon pixel sensors. The sensor design targets temporal and spatial resolutions compatible with the requirements for a vertex detector at future lepton colliders. Simulations and test-beam characterization of technology demonstrators have been carried out in close collaboration with the CERN EP R&D program and the ALICE ITS3 upgrade. TCAD device simulations using generic doping profiles and Monte Carlo simulations have been used to build an understanding of the technology and predict the performance parameters of the sensor. Technology demonstrators of a 65 nm CMOS MAPS with a small collection electrode have been characterized in laboratory and test-beam facilities by studying performance parameters such as cluster size, charge collection, and efficiency. This work compares simulation results to test-beam data. The experimental results establish this technology as a promising candidate for a vertex detector at future lepton colliders and give valuable information for improving the simulation approach., Comment: 6 pages, 5 figures, submitted to Nuclear Instruments and Methods in Physics Research, Section A as a conference proceeding for the 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors

Monolithic CMOS sensors in a 65 nm imaging technology are being investigated by the CERN EP Strategic R&D Programme on Technologies for Future Experiments for an application in particle physics. The appeal of monolithic detectors lies in the fact that both sensor volume and readout electronics are integrated in the same silicon wafer, providing a reduction in production effort, costs and scattering material. The Tangerine Project WP1 at DESY participates in the Strategic R&D Programme and is focused on the development of a monolithic active pixel sensor with a time and spatial resolution compatible with the requirements for a future lepton collider vertex detector. By fulfilling these requirements, the Tangerine detector is suitable as well to be used as telescope planes for the DESY-II Test Beam facility. The project comprises all aspects of sensor development, from the electronics engineering and the sensor design using simulations, to laboratory and test beam investigations of prototypes. Generic TCAD Device and Monte-Carlo simulations are used to establish an understanding of the technology and provide important insight into performance parameters of the sensor. Testing prototypes in laboratory and test beam facilities allows for the characterization of their response to different conditions. By combining results from all these studies it is possible to optimize the sensor layout. This contribution presents results from generic TCAD and Monte-Carlo simulations, and measurements performed with test chips of the first sensor submission., Comment: 7 pages, 8 figures, submitted to IEEE Xplore as conference record for 2022 IEEE NSS/MIC/RTSD

High-resolution beam telescopes for charged particle tracking are one of the most important and equally demanding infrastructure items at test beam facilities. The main purpose of beam telescopes is to provide precise reference track information of beam particles to measure the performance of a device under test (DUT). In this report the development of the ADENIUM beam telescope (ALPIDE sensor based DESY Next test beam Instrument) as a demonstrator and prototype for a next-generation beam telescope is presented. The ADENIUM beam telescope features up to six pixelated reference planes framed by plastic scintillators for triggering. ADENIUM is capable of replacing the currently used EUDET-type beam telescopes without impacting existing DUT implementations due to the integration of the telescope DAQ into EUDAQ2. In this report the concept and design of the ADENIUM telescope as well as its performance are discussed. The telescope's pointing resolution is determined in different configurations. For an optimal setup at an momentum of 5.6 GeV with an ALPIDE as DUT, a resolution better than 3 um has been extracted. No rate limitations have been observed at the DESY II test beam., Comment: 11 pages, 8 figures

Test beam facilities are essential to study the response of novel detectors to particles. At the DESY II Test Beam facility, users can test their detectors with an electron beam with a momentum from 1-6 GeV. To track the beam particles, EUDET-style telescopes are provided in each beam area. They provide excellent spatial resolution, but the time resolution is limited by the rolling shutter architecture to a precision of approximately 230 $\mu$s. Since the demand on particle rates -- and hence track multiplicities -- is increasing timing is becoming more relevant. DESY foresees several upgrades of the telescopes. TelePix is an upgrade project to provide track timestamping with a precision of better than 5 ns and a configurable region of interest to trigger the telescope readout. Small scale prototypes have been characterised in laboratory and test beam measurements. Laboratory tests with an injection corresponding to 2300 electrons show a S/N of above 20. Test beam characterization shows efficiencies of above 99% over a threshold range of more than 100 mV and time resolutions of 2.4 ns at low noise rates., Comment: Preprint submitted to Proceedings of the 15th Pisa Meeting on Advanced Detectors

A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higher densities of on-chip circuits and, for a given pixel size, more sophisticated in-pixel logic compared to larger feature size processes. MAPS are a cost-effective alternative to hybrid pixel sensors since flip-chip bonding is not required. In addition, they allow for significant reductions of the material budget of detector systems, due to the smaller physical thicknesses of the active sensor and the absence of a separate readout chip. The TANGERINE project develops a sensor suitable for future Higgs factories as well as for a beam telescope to be used at beam-test facilities. The sensors will have small collection electrodes (order of $\mu$m) to maximize the signal-to-noise ratio, which makes it possible to minimize power dissipation in the circuitry. The first batch of test chips, featuring full front-end amplifiers with Krummenacher feedback, was produced and tested at the Mainzer Mikrotron (MAMI) at the end of 2021. MAMI provides an electron beam with currents up to 100 $\mu$A and an energy of 855 MeV. The analog output signal of the test chips was recorded with a high bandwidth oscilloscope and used to study the charge-sensitive amplifier of the chips in terms of waveform analysis. A beam telescope was used as a reference system to allow for track-based analysis of the recorded data., Comment: 3 pages, 2 figures, presented at 15th Pisa Meeting on Advanced Detectors

The Tangerine project aims to develop new state-of-the-art high-precision silicon detectors. Part of the project has the goal of developing a monolithic active pixel sensor using a novel 65 nm CMOS imaging process, with a small collection electrode. This is the first application of this process in particle physics, and it is of great interest as it allows for an increased logic density and reduced power consumption and material budget compared to other processes. The process is envisioned to be used in for example the next ALICE inner tracker upgrade, and in experiments at the electron-ion collider. The initial goal of the three-year Tangerine project is to develop and test a sensor in a 65 nm CMOS imaging process that can be used in test beam telescopes at DESY, providing excellent spatial resolution and high time resolution, and thus demonstrating the capabilities of the process. The project covers all aspects of sensor R&D, from electronics and sensor design using simulations, to prototype test chip characterisation in labs and at test beams. The sensor design simulations are performed by using a powerful combination of detailed electric field simulations using technology computer-aided design and high-statistics Monte Carlo simulations using the Allpix Squared framework. A first prototype test chip in the process has been designed and produced, and successfully operated and tested both in labs and at test beams., Comment: 5 pages, 5 figures. Proceedings of VCI 2022: The 16th Vienna Conference on Instrumentation, submitted to Nucl. Instrum. Methods Phys. Res. A

Small collection-electrode monolithic CMOS sensors profit from a high signal-to-noise ratio and a small power consumption, but have a limited active sensor volume due to the fabrication process based on thin high-resistivity epitaxial layers. In this paper, the active sensor depth is investigated in the monolithic small collection-electrode technology demonstrator CLICTD. Charged particle beams are used to study the charge-collection properties and the performance of devices with different thicknesses both for perpendicular and inclined particle incidence. In CMOS sensors with a high-resistivity Czochralski substrate, the depth of the sensitive volume is found to increase by a factor two in comparison with standard epitaxial material and leads to significant improvements in the hit-detection efficiency and the spatial and time resolution.

An ever-increasing demand for high-performance silicon sensors requires complex sensor designs that are challenging to simulate and model. The combination of electrostatic finite element simulations with a transient Monte Carlo approach provides simultaneous access to precise sensor modelling and high statistics. The high simulation statistics enable the inclusion of Landau fluctuations and production of secondary particles, which offers a realistic simulation scenario. The transient simulation approach is an important tool to achieve an accurate time-resolved description of the sensor, which is crucial in the face of novel detector prototypes with increasingly precise timing capabilities. The simulated time resolution as a function of operating parameters as well as the full transient pulse can be monitored and assessed, which offers a new perspective on the optimisation and characterisation of silicon sensors. In this paper, a combination of electrostatic finite-element simulations using 3D TCAD and transient Monte Carlo simulations with the Allpix Squared framework are presented for a monolithic CMOS pixel sensor with a small collection diode, that is characterised by a highly inhomogeneous, complex electric field. The results are compared to transient 3D TCAD simulations that offer a precise simulation of the transient behaviour but long computation times. Additionally, the simulations are benchmarked against test-beam data and good agreement is found for the performance parameters over a wide range of different operation conditions.

Corryvreckan is a versatile, highly configurable software with a modular structure designed to reconstruct and analyse test beam and laboratory data. It caters to the needs of the test beam community by providing a flexible offline event building facility to combine detectors with different read-out schemes, with or without trigger information, and includes the possibility to correlate data from multiple devices based on timestamps. Hit timing information, available with high precision from an increasing number of detectors, can be used in clustering and tracking to reduce combinatorics. Several algorithms, including an implementation of Millepede-II, are provided for offline alignment. A graphical user interface enables direct monitoring of the reconstruction progress and can be employed for quasi-online monitoring during data taking. This work introduces the Corryvreckan framework architecture and user interface, and provides a detailed overview of the event building algorithm. The reconstruction and analysis capabilities are demonstrated with data recorded at the DESY II Test Beam Facility using the EUDAQ2 data acquisition framework with an EUDET-type beam telescope, a Timepix3 timing reference, a fine-pitch planar silicon sensor with CLICpix2 readout and the AIDA Trigger Logic Unit. The individual steps of the reconstruction chain are presented in detail.

Stringent requirements are posed on the the next generations of vertex and tracking detectors for high-energy physics experiments to reach the foreseen physics goals. A large variety of silicon pixel sensors targeting the specific needs of each use case are developed and tested both in laboratory and test-beam measurement campaigns. Corryvreckan is a flexible, fast and lightweight test-beam data reconstruction and analysis framework based on a modular concept of the reconstruction chain. It is designed to fulfil the requirements for offline event building in complex data-taking environments combining detectors with different readout schemes. Its modular architecture separates the framework core from the implementation of reconstruction, analysis and detector specific algorithms. In this paper, a brief overview of the software framework and the reconstruction and analysis chain is provided. This is complemented by an example analysis of a data set using the offline event building capabilities of the framework and an improved event building scheme allowing for a more efficient usage of test-beam data exploiting the pivot pixel information of the Mimosa26 sensors., Comment: Proceedings for Vertex2020, 8 pages, 5 figures

The MuPix7 is a prototype high voltage monolithic active pixel sensor with 103 times 80 um2 pixels thinned to 64 um and incorporating the complete read-out circuitry including a 1.25 Gbit/s differential data link. Using data taken at the DESY electron test beam, we demonstrate an efficiency of 99.3% and a time resolution of 14 ns. The efficiency and time resolution are studied with sub-pixel resolution and reproduced in simulations., Comment: 7 pages, 13 figures, submitted to Nucl.Instr.Meth.A

Mu3e is a novel experiment searching for charged lepton flavor violation in the rare decay $\mu^+ \rightarrow e^+e^-e^+$. Decay vertex position, decay time and particle momenta have to be precisely measured in order to reject both accidental and physics background. A silicon pixel tracker based on $50\,\mu$m thin high voltage monolithic active pixel sensors (HV-MAPS) in a 1 T solenoidal magnetic field provides precise vertex and momentum information. The MuPix chip combines pixel sensor cells with integrated analog electronics and a periphery with a complete digital readout. The MuPix7 is the first HV-MAPS prototype implementing all functionalities of the final sensor including a readout state machine and high speed serialization with 1.25 Gbit/s data output, allowing for a streaming readout in parallel to the data taking. The observed efficiency of the MuPix7 chip including the full readout system is $\geq99\%$ in a high rate test beam., Comment: Replaced with final version accepted by the publisher