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1. Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate.

Author

Huiling Shang, M., Kam-Leung Lee, M., P. Kozlowski, M., D'Emic, C., Babich, I., Sikorski, E., Meikei Ieong, E., Wong, H.-S.P., Guarini, Kathryn, and Haensch, W.

Subjects
GERMANIUM, METAL oxide semiconductor field-effect transistors, TUNGSTEN, DIELECTRICS, COMPLEMENTARY metal oxide semiconductors, ELECTRONICS
Abstract

In this letter, we report self-aligned n-channel germanium (Ge) MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate electrode. Excellent off-state current is achieved through the reduction of junction leakage. For the first time, we have demonstrated an n-channel Ge MOSFET with a subthreshold slope of 150 mV/dec and an on-off current ratio of ∼104. [ABSTRACT FROM AUTHOR]

Published
2004
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