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Magnetic heat capacity measurements of a high-quality single crystal of the dipole-octupole pyrochlore Ce$_2$Hf$_2$O$_7$ down to a temperature of $T = 0.02$ K are reported. These show a two-peaked structure, with a Schottky-like peak at $T_1 \sim 0.065$ K, similar to what is observed in its sister Ce-pyrochlores Ce$_2$Zr$_2$O$_7$ and Ce$_2$Sn$_2$O$_7$. However a second, sharper peak is observed at $T_2 \sim 0.025$ K, which signifies the entrance to its ground state, as even the most abrupt low-temperature extrapolation to $C_P=0$ at $T = 0$ K gives a full accounting of $R\ln(2)$ in entropy, associated with the well isolated pseudospin-1/2 doublet for Ce$^{3+}$ in this environment. The ground state could be conventionally ordered, although theory predicts a much larger anomaly in $C_P$, at much higher temperatures than the measured $T_2$, for expectations from an all-in all-out ground state of the nearest-neighbor XYZ Hamiltonian for Ce$_2$Hf$_2$O$_7$. The sharp low-temperature peak could also signify a cross-over from a classical spin liquid to a quantum spin liquid (QSL). The diffuse magnetic neutron scattering observed from Ce$_2$Hf$_2$O$_7$ at low temperatures between $T_2$ and $T_1$ resembles that observed from Ce$_2$Zr$_2$O$_7$, which is well established as a $\pi$-flux quantum spin ice (QSI)., Comment: Main Text (5 pages, 4 figures), Supplemental Material (14 pages, 17 figures)

We find that the double-threshold voltage-current characteristics in the insulating regime in the ultra-clean two-valley two-dimensional electron system in SiGe/Si/SiGe quantum wells are promoted by perpendicular magnetic fields, persisting to an order of magnitude lower voltages and considerably higher electron densities compared to the zero-field case. This observation indicates the perpendicular-magnetic-field stabilization of the quantum electron solid., Comment: As published

We have developed a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts outside the Hall bar in ultra-high mobility SiGe/Si/SiGe heterostructures. It involves the creation of three overlapping independent gates deposited on top of the structure and allows transport measurements to be performed at millikelvin temperatures in the strongly interacting limit at low electron densities, where the energy of the electron-electron interactions dominates all other energy scales. This design allows one to observe the two-threshold voltage-current characteristics that are a signature for the collective depinning and sliding of the electron solid.

The parallel stripe phase is remarkable both in its own right, and in relation to the other phases it co-exists with. Its inhomogeneous nature makes such states susceptible to random fields from quenched magnetic vacancies. We argue this is the case by introducing low concentrations of nonmagnetic Zn impurities (0-10%) into La$_{1.6-x}$Nd$_{0.4}$Sr$_x$CuO$_4$ (Nd-LSCO) with $x$ = 0.125 in single crystal form, well below the percolation threshold of $\sim$ 41% for two-dimensional (2D) square lattice. Elastic neutron scattering measurements on these crystals show clear magnetic quasi-Bragg peaks at all Zn dopings. While all the Zn-doped crystals display order parameters that merge into each other and the background at $\sim$ 68 K, the temperature dependence of the order parameter as a function of Zn concentration is drastically different. This result is consistent with meandering charge stripes within the parallel stripe phase, which are pinned in the presence of quenched magnetic vacancies. In turn it implies vacancies that preferentially occupy sites within the charge stripes, and hence that can be very effective at disrupting superconductivity in Nd-LSCO ($x$ = 0.125), and, by extension, in all systems exhibiting parallel stripes.

We report the observation of two-threshold voltage-current characteristics accompanied by a peak of broadband current noise between the two threshold voltages in the insulating state at low densities in the 2D electron system in ultra-high mobility SiGe/Si/SiGe heterostructures. The observed results can be described by a phenomenological theory of the collective depinning of elastic structures, which naturally generates a peak of a broadband current noise between the dynamic and static thresholds and changes to sliding of the solid over a pinning barrier above the static threshold. This gives compelling evidence for the electron solid formation in this electron system and shows the generality of the effect for different classes of electron systems., Comment: As published

The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities, the effective mass is found to be strongly enhanced and independent of the degree of spin polarization, which indicates that the mass enhancement is not related to the electrons' spins. The observed effect turns out to be universal for silicon-based 2D electron systems, regardless of random potential, and cannot be explained by existing theories.

Ultra-broadband imaging devices with high performance are in great demand for a variety of technological applications, including imaging, remote sensing, and communications. An ultra-broadband up-converter is realized based on a p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) detector-light emitting diode (LED) device. The device demonstrates an ultra-broad response ranging from visible to terahertz (THz) with good reproducibility. The peak responsivity in the mid-infrared (MIR) region is 140 mA/W at 10.5 microns. The HIWIP-LED shows enormous potential for ultra-broadband up-conversion covering all infrared atmospheric windows, as well as the THz region, and the pixel-less imaging of the MIR spot from the CO2 laser is further demonstrated. In addition, the proposed up-converter also performs as a near-infrared and visible detector under zero bias by using a bi-functional LED. Thanks to its ultra-wide response, the HIWIP-LED up-converter has great promise for stable, high-performance ultra-broadband pixel-less imaging and multi-functional analysis systems., Comment: 23 pages, 5 figures

We report low-temperature magneto-transport measurements of an undoped Si/SiGe asymmetric double quantum well heterostructure. The density in both layers is tuned independently utilizing a top and a bottom gate, allowing the investigation of quantum wells at both imbalanced and matched densities. Integer quantum Hall states at total filling factor $\nu_{\text{T}} = 1$ and $\nu_{\text{T}} = 2$ are observed in both density regimes, and the evolution of their excitation gaps is reported as a function of density. The $\nu_{\text{T}} = 1$ gap evolution departs from the behavior generally observed for valley splitting in the single layer regime. Furthermore, by comparing the $\nu_{\text{T}} = 2$ gap to the single particle tunneling energy, $\Delta_{\text{SAS}}$, obtained from Schr\"{o}dinger-Poisson (SP) simulations, evidence for the onset of spontaneous inter-layer coherence (SIC) is observed for a relative filling fraction imbalance smaller than ${\sim}50\%$, Comment: 6 pages, 3 figures, accepted in APL

The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature $T_{\text{max}}$, at which the resistivity exhibits a maximum, is close to the renormalized Fermi temperature. However, rather than increasing along with the Fermi temperature, the value $T_{\text{max}}$ decreases appreciably for spinless electrons in spin-polarizing (parallel) magnetic fields. The observed behaviour of $T_{\text{max}}$ cannot be described by existing theories. The results indicate the spin-related origin of the effect., Comment: As published

We observe minima of the longitudinal resistance corresponding to the quantum Hall effect of composite fermions at quantum numbers $p=1$, 2, 3, 4, and 6 in an ultraclean strongly interacting bivalley SiGe/Si/SiGe two-dimensional electron system. The minima at $p=3$ disappear below a certain electron density, although the surrounding minima at $p=2$ and $p=4$ survive at significantly lower densities. Furthermore, the onset for the resistance minimum at a filling factor $\nu=3/5$ is found to be independent of the tilt angle of the magnetic field. These surprising results indicate the intersection or merging of the quantum levels of composite fermions with different valley indices, which reveals the valley effect on fractions., Comment: As published

We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at some temperature, and then decreases by more than one order of magnitude. We scale the resistivity data in line with expectations for the transport of strongly correlated Fermi systems and find a nearly perfect agreement with theory over a wide range of electron densities.

We have studied the strongly interacting, two-valley two-dimensional (2D) electron system in ultrahigh mobility SiGe/Si/SiGe quantum wells in parallel magnetic fields strong enough to completely polarize the electron spins thus making the electron system "spinless". It occurs that the metallic temperature dependence of the resistivity, although weaker than that in the absence of magnetic field, still remains strong even when the spin degree of freedom is removed. Several independent methods have been used to establish the existence of the genuine MIT in the spinless two-valley 2D system. This is in contrast to the previous results obtained on more disordered silicon samples, where the polarizing magnetic field causes a complete quench of the metallic temperature behavior.

The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is found that in contrast to previous experiments on lower-mobility samples, in ultra-high mobility SiGe/Si/SiGe quantum wells the critical electron density, $n_{\text{c}}$, of the MIT becomes smaller than the density, $n_{\text{m}}$, where the effective mass at the Fermi level tends to diverge. Near the topological phase transition expected at $n_{\text{m}}$, the metallic temperature dependence of the resistance should be strengthened, which is consistent with the experimental observation of more than an order of magnitude resistance drop with decreasing temperature below $\sim1$ K., Comment: Misprints corrected. As published

We have experimentally studied the fractional quantum Hall effect (FQHE) in SiGe/Si/SiGe quantum wells in relatively weak magnetic fields, where the Coulomb interaction between electrons exceeds the cyclotron splitting by a factor of a few XX. Minima of the longitudinal resistance have been observed corresponding to the quantum Hall effect of composite fermions with quantum numbers $p$ = 1, 2, 3, and 4. Minima with $p$ = 3 disappear in magnetic fields below 7 Tesla, which may be a consequence of the intersection or even merging of the quantum levels of the composite fermions with different orientations of the pseudo-spin, i.e., those belonging to different valleys. We have also observed minima of the longitudinal resistance at filling factors $\nu$ = 4/5 and 4/11, which may be due to the formation of the second generation of the composite fermions.

We report the first observation of $a^{0}_{0}(980)$-$f_{0}(980)$ mixing in the decays of $J/\psi\to\phi f_{0}(980)\to\phi a^{0}_{0}(980)\to\phi\eta\pi^{0}$ and $\chi_{c1}\to a^{0}_{0}(980)\pi^{0}\to f_{0}(980)\pi^{0}\to\pi^{+}\pi^{-}\pi^{0}$, using data samples of $1.31\times10^{9}$ $J/\psi$ events and $4.48\times10^{8}$ $\psi(3686)$ events accumulated with the BESIII detector. The signals of $f_{0}(980)\to a^{0}_{0}(980)$ and $a^{0}_{0}(980)\to f_{0}(980)$ mixing are observed at levels of statistical significance of $7.4\sigma$ and $5.5\sigma$, respectively. The corresponding branching fractions and mixing intensities are measured and the constraint regions on the coupling constants, $g_{a_{0}K^{+}K^{-}}$ and $g_{f_{0}K^{+}K^{-}}$, are estimated. The results improve the understanding of the nature of $a^{0}_{0}(980)$ and $f_{0}(980)$., Comment: 7 pages, 4 figures, 2 tables

As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of SiGe heterostructures. To preserve the substrate structure and elastic state, we use a T $\leq 800^\circ$C process to prepare clean Si$_{0.86}$Ge$_{0.14}$ surfaces suitable for atomic-precision fabrication. P-saturated atomic-layer doping is incorporated and capped with epitaxial Si under a thermal budget compatible with atomic-precision fabrication. Hall measurements at T$=0.3$ K show that the doped heterostructure has R$_{\square}=570\pm30$ $\Omega$, yielding an electron density $n_{e}=2.1\pm0.1\times10^{14}$cm$^{-2}$ and mobility $\mu_e=52\pm3$ cm$^{2}$ V$^{-1}$ s$^{-1}$, similar to saturated atomic-layer doping in pure Si and Ge. The magnitude of $\mu_e$ and the complete absence of Shubnikov-de Haas oscillations in magnetotransport measurements indicate that electrons are overwhelmingly localized in the donor layer, and not within a nearby buried Si well. This conclusion is supported by self-consistent Schr\"odinger-Poisson calculations that predict electron occupation primarily in the donor layer., Comment: 7 pages, 6 figures, to be submitted to Physical Review Materials. This work has been supported by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy (DOE). This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science

Using a sample of $1.31 \times 10^{9}$ $J/\psi$ events collected with the BESIII detector at the BEPCII collider, we study the decays of $J/\psi \rightarrow K_S K_L$ and $K_S K_S$. The branching fraction of$J/\psi\rightarrow K_S K_L$ is determined to be ${\cal B}(J/\psi \rightarrow K_S K_L)=(1.93\pm0.01~(\rm{stat.})\pm0.05~(\rm{syst.}))\times10^{-4}$, which significantly improves on previous measurements. No clear signal is observed for the $J/\psi \rightarrow K_S K_S$ process, and the upper limit at the 95% confidence level for its branching fraction is determined to be ${\cal B}(J/\psi \rightarrow K_S K_S)<1.4\times10^{-8}$, which improves on the previous searches by two orders in magnitude and reaches the order of the Einstein-Podolsky-Rosen expectation., Comment: 7 pages, 4 figures. Minor revisions, matched to the version in Physical Review D

We report measurements of the effective $g$ factor of low-density two-dimensional holes in a Ge quantum well. Using the temperature dependence of the Shubnikov-de Haas oscillations, we extract the effective $g$ factor in a magnetic field perpendicular to the sample surface. Very large values of the effective $g$ factor, ranging from $\sim13$ to $\sim28$, are observed in the density range of $1.4\times10^{10}$ cm$^{-2}$ to $1.4\times10^{11}$ cm$^{-2}$. When the magnetic field is oriented parallel to the sample surface, the effective $g$ factor is obtained from a protrusion in the magneto-resistance data that signifies full spin polarization. In the latter orientation, a small effective $g$ factor, $\sim1.3-1.4$, is measured in the density range of $1.5\times10^{10}$ cm$^{-2}$ to $2\times10^{10}$ cm$^{-2}$. This very strong anisotropy is consistent with theoretical predictions and previous measurements in other 2D hole systems, such as InGaAs and GaSb.

We find an unusual anisotropy of the inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field, $B_\parallel$, and current, $I$, relative to the crystallographic axes of the sample and is a consequence of the intrinsic ridges on the quantum well surface. For the simplest orientations between current and crystallographic axes, a method of recalculating the magnetoresistance measured at $I\perp B_\parallel$ into the one measured at $I\parallel B_\parallel$ is suggested and is shown to yield results that agree with the experiment., Comment: As published

Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a gate-controlled quantum Hall ferromagnetic transition between two real spin states in a conventional two-dimensional system without any in-plane magnetic field. We show that the ratio of the Zeeman splitting to the cyclotron gap in a Ge two-dimensional hole system increases with decreasing density owing to inter-carrier interactions. Below a critical density of $\sim2.4\times 10^{10}$ cm$^{-2}$, this ratio grows greater than $1$, resulting in a ferromagnetic ground state at filling factor $\nu=2$. At the critical density, a resistance peak due to the formation of microscopic domains of opposite spin orientations is observed. Such gate-controlled spin-polarizations in the quantum Hall regime opens the door to realizing Majorana modes using two-dimensional systems in conventional, low-spin-orbit-coupling semiconductors.

We present first evidence for the process $e^+e^-\to \gamma\eta_c(1S)$ at six center-of-mass energies between 4.01 and 4.60~GeV using data collected by the BESIII experiment operating at BEPCII. These data sets correspond to a total integrated luminosity of 4.6~fb$^{-1}$. We measure the Born cross section at each energy using a combination of twelve $\eta_c(1S)$ decay channels. Because the significance of the signal is marginal at each energy ($\le3.0\sigma$), we also combine all six energies under various assumptions for the energy-dependence of the cross section. If the process is assumed to proceed via the $Y(4260)$, we measure a peak Born cross section $\sigma_{\mathrm{ peak}}(e^+e^-\to\gamma\eta_c(1S)) = 2.11 \pm 0.49 (\mathrm{stat.}) \pm 0.36 (\mathrm{syst.})$~pb with a statistical significance of 4.2$\sigma$., Comment: 8 pages, 2 figures

Using ultra-high quality SiGe/Si/SiGe quantum wells at millikelvin temperatures, we experimentally compare the energy-averaged effective mass, $m$, with that at the Fermi level, $m_F$, and verify that the behaviours of these measured values are qualitatively different. With decreasing electron density (or increasing interaction strength), the mass at the Fermi level monotonically increases in the entire range of electron densities, while the energy-averaged mass saturates at low densities. The qualitatively different behaviour reveals a precursor to the interaction-induced single-particle spectrum flattening at the Fermi level in this electron system.

We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m^2/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al_2O_3, as an insulator, we obtain strongly reduced threshold voltages close to zero. In addition to the predominantly small-angle scattering well known in the high-mobility heterostructures, the observed linear temperature dependence of the conductivity reveals the presence of a short-range random potential., Comment: as published. arXiv admin note: substantial text overlap with arXiv:1409.2712

We have investigated the magnetic properties of Mn and Cu substituted SrZnO2 single crystals (SrZn0.99Mn0.01O2 and SrZn0.99Cu0.01O2). We observed signatures of weak ferromagnetism as a sharp increase of magnetic susceptibility below 5 K even in the low percentage (x= 0.01) of Mn substituted single crystals. Magnetic susceptibility data measured parallel or perpendicular to the ab plane yield anisotropic behavior with Curie Weiss temperature of about -320 K and -410 K, respectively, suggesting the presence of strong antiferromagnetic couplings among Mn atoms at high temperatures, similar to the Mn doped ZnO and Fe doped BaTiO3 samples. In contrast, the SrZn0.99Cu0.01O2 crystal shows paramagnetic behavior down to 2 K., Comment: 5 pages, 6 figures, Journal of Applied Physics 114, 123903 (2013)

The effective mass, m*, of the electrons confined in high-mobility SiGe/Si/SiGe quantum wells has been measured by the analysis of the temperature dependence of the Shubnikov-de Haas oscillations. In the accessible range of electron densities, n_s, the effective mass has been found to grow with decreasing n_s, obeying the relation m*/m_b=n_s/(n_s-n_c), where m_b is the electron band mass and n_c~0.54*10^11 cm^-2. In samples with maximum mobilities ranging between 90 and 220 m^2/Vs, the dependence of the effective mass on the electron density has been found to be identical suggesting that the effective mass is disorder-independent, at least in the most perfect samples.

Sodium ion ordering on in situ cleaved NaxCoO2 (x=0.84) surface has been studied by ultra high vacuum scanning tunneling microscopy (UHV-STM) at room temperature. Three main phases, with p(3x3), (root 7 x root 7), and (2 root 3 x 2 root 3) hexagonal unit cells and surface Na concentration of 1/3, 3/7, 1/2, respectively, were identified. One surprising finding is that Na trimers act as the basic building blocks that order in long range. The stability of Na trimers is attributed to the increased Na coordination with oxygen as indicated by ab initio calculations, and possibly at finite temperature by configuration entropy.