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528 results on '"Huang, M. L."'

20. Formation mechanism and reliability of preferred growth full Cu6Sn5 intermetallic compound interconnect on (011) Cu single-crystal substrate.

Author

Huang, M. L., Zou, L., and Wu, Y.

Subjects
INTERMETALLIC compounds, COPPER-tin alloys, SEMICONDUCTOR devices, SEMICONDUCTOR technology, CRYSTAL grain boundaries, ELECTRODIFFUSION
Abstract

The preferred growth full intermetallic compound (IMC) interconnect was fabricated using the current driven bonding (CDB) method. The morphology, orientation and growth mechanism of preferred growth η-Cu6Sn5 grains on (011) Cu single-crystal substrate under current stressing were investigated. Four growth directions of slantwise η-Cu6Sn5 grains that have an angle of 60° with the current stressing direction were identified. The orientation relationships between the preferred growth η-Cu6Sn5 grains and (011) Cu single-crystal substrate were 11 2 ¯ 0 η 111 Cu and 0001 η 011 Cu . The η-Cu6Sn5 grains in the same growth direction merged and continued coarsening undergoing the current stressing, while the η-Cu6Sn5 grains in different growth directions could not merge due to the smaller contacting grain boundary area. Furthermore, the current stressing induced the < 0001 > η growing directions of slantwise η-Cu6Sn5 grains to a smaller angle with the current stressing direction. The preferred growth full IMC interconnect had a superior electromigration resistance. No voids or cracks were observed in the preferred growth full IMC interconnects even after current stressing at 150 °C for 500 h. The present work is expected to provide guidance for the application in high temperature packaging technology of the third-generation semiconductor devices. [ABSTRACT FROM AUTHOR]

Published
2022
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