22 results on '"Hsieh, Dong-Ru"'
Search Results
2. Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium–Tin–Zinc–Oxide Channel
3. First Demonstration of Highly Scaled Atomic Layer Deposited Ultrathin InSnZnO Channel Thin Film Transistor Exhibiting Superior Electrical Characteristics
4. Single‐Gate In‐Transistor Readout of Current Superposition and Collapse Utilizing Quantum Tunneling and Ferroelectric Switching
5. Record-High Memory Window and Robust Retention Anti-Fuse OTP Memory: Electrical and Reliability Characteristics
6. Optimization of Ferroelectricity in Al-Doped HfO2 Capacitors: Electrical and Endurance Characteristics
7. Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS = 2V)
8. Stacked Gate-All-Around Nanosheet Channel Ferroelectric HfxZr1-xO2 FETs With NH3 Plasma Treatment Featuring High Footprint Current
9. Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors with Excellent Electrical Characteristics
10. Reliability of Multiple-Layer Stacked Gate-All-Around Poly-Si Nanosheet Channel Ferroelectric Hf$_{\textit{x}}$Zr$_{\text{1}-\textit{x}}$O$_{\text{2}}$ FETs With NH$_{\text{3}}$ Plasma Treatment
11. Role of Nitrogen in Ferroelectricity of Hf x Zr1-x O2-Based Capacitors With Metal-Ferroelectric-Insulator-Metal Structure
12. Investigation of NH3 Plasma Nitridation on Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel FeFETs
13. Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel Ferroelectric HfxZr1-xO2 Negative Capacitance FETs With Internal Metal Gate and NH3 Plasma Nitridation
14. Investigation of Two Bits With Multistate Antifuse on nMOS Poly-Silicon Junctionless GAA OTP
15. Reliability of Multiple-Layer Stacked Gate-All-Around Poly-Si Nanosheet Channel Ferroelectric HfxZr1-xO2FETs With NH3 Plasma Treatment
16. Reliability of p-Type Pi-Gate Poly-Si Nanowire Channel Junctionless Accumulation-Mode FETs
17. Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel Ferroelectric Hf x Zr 1-x O 2 Negative Capacitance FETs With Internal Metal Gate and NH 3 Plasma Nitridation.
18. Investigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTs
19. Investigation of Channel Doping Concentration and Reverse Boron Penetration on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode FETs
20. Comprehensive Analysis on Electrical Characteristics of Pi-Gate Poly-Si Junctionless FETs
21. High-performance sidewall damascened tri-gate poly-si TFTs with the strain proximity free technique and stress memorization technique
22. High-Performance Pi-Gate Poly-Si Junctionless and Inversion Mode FET
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.