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Scribing wheel (SW) is an important tool for separating glass panels in thin-film transistor liquid crystal display industry. In this study, unlike the traditional SW completely made of polycrystalline diamond (PCD) or cemented tungsten carbide (c-WC), an alternative partially taking advantage of chemical vapor deposition diamond (CVDD) was newly developed. The fabrication of such unique sandwich-like CVDD-SW combined hot filament chemical vapor deposition (HFCVD), welding, and other machining processes. Both hard CVDD scribing edge and tough c-WC supporting layers contributed to SW structure. CVDD was prepared by adjusting the concentration of methane fed into HFCVD chamber. Morphological observation confirmed the reproducibility of microcrystal diamond (MCD), submicrocrystal diamond (SMCD), and nanocrystal diamond (NCD) diamond. Besides grain size, the existence of columnar structure, the nondiamond carbon content, the residual stress, and I(220)/I(111) ratio of CVDD films were characterized by scanning electron microscopy, Raman spectroscopy, and X-ray diffraction. Based on results, SMCD was predicted as the optimized CVDD for making a scribing edge. After three CVDD films were respectively integrated into SW, this prediction was supported by preliminary scribing test. Selecting Corning-1737 as the cutting object, among three CVDD-SWs and one self-made PCD-SW, only the scribing edge of SMCD-SW kept almost undamaged. The outperformance of our design was thus confirmed.

The porous Ti film getters on (100) silicon substrates were prepared using the glancing angle deposition of dc (direct current) magnetron sputtering method. The main deposition parameters that produce the porous Ti films are the low substrate temperature and high glancing angle. The larger the glancing angle is, the higher the porosity of the Ti films is. The porous films, grown at the glancing angle of 70° and room substrate temperature, are composed of nano-columnar crystalline crystals. The size and inter-distance between the columnar crystals are 70 nm and 30 nm, respectively. The porous Ti films have larger capability to absorb the oxygen than that of dense Ti films and Si substrate. The suitable operation condition of porous Ti film getters was also established.