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The unique 1D crystal structure of Antimony Triselenide (Sb2Se3) offers notable potential for use in flexible, lightweight devices due to its excellent bending characteristics. However, fabricating high‐efficiency flexible Sb2Se3 solar cells is challenging, primarily due to the suboptimal contact interface between the embedded Sb2Se3 layer and the molybdenum back‐contact, compounded by complex intrinsic defects. This study introduces a novel Molybdenum Trioxide (MoO3) interlayer to address the back contact interface issues in flexible Sb2Se3 devices. Further investigations indicate that incorporating a MoO3 interlayer not only enhances the crystalline quality but also promotes a favorable [hk1] growth orientation in the Sb2Se3 absorber layer. It also reduces the barrier height at the back contact interface and effectively passivates harmful defects. As a result, the flexible Sb2Se3 solar cell, featuring a Mo‐foil/Mo/MoO3/Sb2Se3/CdS/ITO/Ag substrate structure, demonstrates exceptional flexibility and durability, enduring large bending radii and multiple bending cycles while achieving an impressive efficiency of 8.23%. This research offers a straightforward approach to enhancing the performance of flexible Sb2Se3 devices, thereby expanding their application scope in the field of photovoltaics. [ABSTRACT FROM AUTHOR]

The gas-liquid flow and oxygen content in a pressurized leaching stirred tank significantly influence the chemical reaction rates, while the specific dynamics of gas-liquid flow in the sulfuric acid system remain largely unexplored. In this study, a mathematical model of gas-liquid flow within a stirred tank is developed using the Euler-Euler approach, with the turbulence and drag force models being validated against experimental data. Utilizing this validated and reliable model, this study investigates the impacts of the sulfuric acid concentration, baffles, air inlet velocity, and bubble diameter on the flow field and gas holdup in a two-phase system consisting of a sulfuric acid solution and oxygen. The findings indicate that introducing a specific concentration of sulfuric acid decreases the solution velocity and increases the gas holdup within the tank. However, once the sulfuric acid concentration reaches a certain threshold, further increases have a diminished effect on the gas-liquid phases. The installation of baffles enhances the turbulent kinetic energy and increases the gas holdup while only resulting in a minimal 1.2% increase in power consumption. Additionally, the inlet velocity and bubble diameter have a relatively minor impact on the tank's flow field. However, increasing the inlet velocity significantly boosts the gas holdup, whereas an increase in the bubble diameter marginally reduces it. Furthermore, introducing a sulfuric acid solution into the tank can enhance the gas holdup when the gas inlet velocity is low. Conversely, when the gas inlet velocity is high, the addition of sulfuric acid results in a decrease in the gas holdup. The conclusions from this study contribute to enhancing the mixing effectiveness and oxygen content within the tank, providing a substantial theoretical basis for optimizing the design and operating conditions of pressurized leaching stirred tanks. [ABSTRACT FROM AUTHOR]

The process of graphene growth by CVD involves a series of complex gas-phase surface chemical reactions, which generally go through three processes, including gas phase decomposition, surface chemical reaction, and gas phase diffusion. The complexity of the CVD process for growing graphene is that it involves not only chemical reactions but also mass, momentum, and energy transfer. To solve these problems, the method of numerical simulation combined with the reactor structure optimization model provides a good tool for industrial production and theoretical research to explore the influencing factors of the CVD growth of graphene. The objective of this study was to establish a simplified reaction model for the growth of graphene by chemical vapor deposition(CVD) in a vertical rotating disk reactor (VRD). From a macroscopic modeling perspective, computational fluid dynamics (CFD) was used to investigate the conditions for the growth of graphene by chemical vapor deposition in a high-speed rotating vertical disk reactor on a copper substrate surface at atmospheric pressure (101,325 Pa). The effects of gas temperature, air inlet velocity, base rotation speed, and material ratio on the surface deposition rate of graphene in a VRD reactor were studied, and the technological conditions for the preparation of graphene via the CVD method in a VRD reactor based on a special structure were explored. Compared with existing models, the numerical results showed the following: the ideal growth conditions of graphene prepared using a CVD method in a VRD reactor involve a growth temperature of 1310 K, an intake speed of 470 mL/min, a base speed of 300 rpm, and an H2 flow rate of 75 sccm; thus, more uniform graphene with a better surface density and higher quality can be obtained. The effect of the carbon surface deposition rate on the growth behavior of graphene was studied using molecular dynamics (MD) from a microscopic perspective. The simulation showed that the graphene surface deposition rate could control the nucleation density of graphene. The combination of macro- and microsimulation methods was used to provide a theoretical reference for the production of graphene. [ABSTRACT FROM AUTHOR]