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1,158 results on '"Hou, Yanbing"'

29. Enhancing ion doping and charge transport in polymer electrochemical transistors through poly(3-hexylthiophene) nanowire integration.

Author

Deng, Yadan, Jiang, Jingzan, Chen, Xinmu, Sun, Jun, Lou, Zhidong, Hou, Yanbing, Teng, Feng, and Hu, Yufeng

Abstract

The balance between ion implantation and carrier transport is a critical factor in achieving high-performance polymer electrochemical transistors (PECTs). While the crystallinity of polymer films typically enhances the charge transport capacity of these devices, the orderly packed chains impede the injection of ions. In this study, poly(3-hexylthiophene) (P3HT) nanowires were incorporated into PECTs to address this issue. The μCv value (μ: charge mobility, Cv: volumetric capacitance; the product μCv has been proposed as a figure of merit for OECT materials) of the films with embedded nanowires (WN) is approximately three times that of the films without nanowires (W/O N), and the subthreshold swing of the WN devices is also lower than that of the W/O N devices. These findings indicate the superior ion doping property of the WN devices. The time evolution of the absorption difference spectra for the films demonstrates that the ions preferentially dope the J-aggregate regions in the WN films, which correspond to the nanowires. The results suggest that the nanowires enhance ion doping in the WN films, likely due to their large specific surface area. This work demonstrates a feasible strategy to effectively improving ion implantation while maintaining charge mobility by introducing polymer crystallization into PECT devices. [ABSTRACT FROM AUTHOR]

Published
2025
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40. Enhanced light-emitting transistors utilizing multi-dimensional CsPbBr3 perovskite films and PVP-modified ZTO semiconductor layers.

Author

Zhang, Xingyu, Guo, Min, Li, Jia, Song, Bo, Meng, Fanwen, Wang, Zitong, Lou, Zhidong, Hou, Yanbing, Hu, Yufeng, and Teng, Feng

Abstract

Light-emitting transistors (LETs) uniquely combine the electroluminescent features of LEDs with the switching capabilities of field-effect transistors, offering promising applications in advanced display technology, lighting, electrically pumped lasers, and optical communication systems. This study reports on the fabrication and performance of perovskite light-emitting transistors (PeLETs) using solution-processed CsPbBr3 thin films, enhanced with phenethylammonium bromide (PEABr) and polyethylene oxide (PEO) to create a multi-dimensional mixed phase with a quantum well structure, characterized by a reduced presence of low-dimensional phases and an increased proportion of high-dimensional phases, thereby enhancing exciton recombination efficiency. The incorporation of high-mobility zinc tin oxide (ZTO) films as channel and electron transport layers is investigated. Direct contact between the perovskite and ZTO layers initially leads to an increased off-state current and degraded electrical characteristics of ZTO field-effect transistors (FETs). However, introducing polyvinylpyrrolidone (PVP) as a modification layer significantly improves these characteristics, resulting in a more uniform electric field distribution and consistent surface emission under coplanar electrodes. The optimized PeLET demonstrates mobility of 0.73 cm2 V−1 s−1 and an on–off ratio exceeding 105. High-purity green light emission at 514 nm with a narrow full-width at half-maximum (FWHM) of 19.97 nm is achieved, showcasing the potential of PeLETs in various optoelectronic applications. [ABSTRACT FROM AUTHOR]

Published
2024
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