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10. Domination of the thermionic-field emission in the reverse I-V characteristics of n-type GaAs Schottky contacts.

11. The effect of ion beam treatment and subsequent annealing on Au/GaAs contacts.

16. Two-phase structure of plasma-polymerized thiophene-passivated GaAs Schottky-like metal-insulator-semiconductor diodes.

17. Evaluation of the interface state energy distribution from Schottky I-V characteristics.

24. FORMATION OF Ge NANOCRYSTALS BY ELECTRON BEAM EVAPORATION

27. Schottky contacts to InP

50. Thickness dependent formation and properties of GdSi2/Si(100) interfaces.

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