1. Magnetic Tunnel Junctions: Laser Annealing Versus Oven Annealing
- Author
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Maria A. Hoffmann, Apoorva Sharma, Mathias Müller, Horst Exner, Nicole Kohler, Dietrich R. T. Zahn, Sandra Busse, Georgeta Salvan, Stefan E. Schulz, and Patrick Matthes
- Subjects
010302 applied physics ,Fabrication ,Materials science ,Magnetoresistance ,Annealing (metallurgy) ,business.industry ,Laser ,Magnetic hysteresis ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,law.invention ,Condensed Matter::Materials Science ,Magnetization ,Exchange bias ,law ,Condensed Matter::Superconductivity ,0103 physical sciences ,Optoelectronics ,Wafer ,Electrical and Electronic Engineering ,business - Abstract
The performance of CoFeB/MgO tunnel junctions is strongly dependent on an annealing step at the end of the fabrication process to first, set a reference magnetization through the exchange bias effect and second, to crystallize the MgO/CoFe layers while boron diffuses out, in order to maximize the magnetoresistance ratio. In this regard, a laser-induced annealing process presents several advantages against traditional oven annealing techniques, providing a scalable approach with no limitations regarding the defined reference magnetization that can be aligned in different directions on a wafer. This paper concentrates on the mechanisms and dependences of laser annealing on the magnetic properties in comparison to the standard vacuum oven annealing, providing a first insight for the applicability of laser annealing for CoFeB-/MgO-based magnetic tunnel junctions with all concomitant needs.
- Published
- 2019