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Abstract ZnO was grown on sapphire substrate by metal–organic chemical vapor deposition using the diethylzinc (DEZn) and oxygen (O2) as source chemicals at 500 °C. Influences of the chamber pressure and O2/DEZn ratio on the ZnO structural properties were discussed. It was found that the chamber pressure has significant effects on the morphology of ZnO and could result in various structures of ZnO including pyramid-like, worm-like, and columnar grain. When the chamber pressure was kept at 10 Torr, the lowest full width at half-maximum of ZnO (002) of 175 arc second can be obtained. On the other hand, by lowering the DEZn flow rate, the crystal quality of ZnO can be improved. Under high DEZn flow rate, the ZnO nanowall-network structures were found to grow vertically on the sapphire substrate without using any metal catalysts. It suggests that higher DEZn flow rate promotes three-dimensional growth mode resulting in increased surface roughness. Therefore, some tip on the ZnO surface could act as nucleation site. In this work, the growth process of our ZnO nanowall networks is said to follow the self-catalyzed growth mechanism under high-DEZn flow rate.

Deep-ultraviolet (DUV) light is essential for applications including fabrication, molecular research, and biomedical imaging. Compact metalenses have the potential to drive further innovation in these fields, provided they utilize a material platform that is cost-effective, durable, and scalable. In this work, we present aluminum nitride (AlN) metalenses as an efficient solution for DUV applications. These metalenses, with a thickness of only 380 nm, deliver DUV focusing and imaging capabilities close to the theoretical diffraction limit. Leveraging their robustness to intense ultrafast laser irradiation, we demonstrate successful DUV ultrafast laser direct writing of microstructures on a polymer film and silicon substrate. These results underscore the significant promise of advancing photonic technologies in this critical wavelength regime.

This study fabricated 10 μm chip size μLEDs of blue-light GaN based epilayers structure with different mesa processes using dry etching and ion implantation technology. Two ion sources, As and Ar, were applied to implant into the LED structure to achieve material isolation and avoid defects on the mesa sidewall caused by the plasma process. Excellent turn-on behavior was obtained in both ion-implanted samples, which also exhibited lower leakage current compared to the sample fabricated by the dry etching process. Additionally, lower dynamic resistance (R d ) and series resistance (R s ) were obtained with Ar implantation, leading to a better wall-plug efficiency of 10.66% in this sample. Consequently, outstanding external quantum efficiency (EQE) values were also present in both implant samples, particularly in the sample implanted with Ar ions. This study proves that reducing defects on the mesa sidewall can further enhance device properties by suppressing non-radiative recombination behavior in small chip size devices. Overall, if implantation is used to replace the traditional dry etching process for mesa fabrication, the ideality factor can decrease from 11.89 to 2.2, and EQE can improve from 8.67 to 11.03%., Competing Interests: Declarations. Competing interests: The authors declare no competing interests., (© 2024. The Author(s).)

This investigation presents a self-powered, solar-blind photodetector utilizing a low-temperature fabricated crystalline NiO/ZnGa 2 O 4 heterojunction with a staggered type-II band alignment. The device leverages the pyrophototronic effect (PPE), combining the photoelectric effect in the p-n junction and the pyroelectric effect in the non-centrosymmetric ZnGa 2 O 4 crystal. This synergistic effect enhances the photodetector's performance parameters, thereby outperforming traditional solar-blind photodetectors. The device demonstrates an extremely low dark current of 5.39 fA, a high responsivity of 88 mA/W, and a very high specific detectivity of 2.03 × 10 14 Jones under 246 nm light irradiation at 0 V bias. Significantly, due to the PPE, the impact demonstrates a much-enhanced transient response when tested under various light intensities, ranging from 18 to 122 μW/cm 2 . The photodetector shows a high responsivity of 338 A/W and an outstanding detectivity of 7.1 × 10 18 Jones with an applied voltage of -13 V, showing its ability to detect weak signals. Single-crystalline ZnGa 2 O 4 fabricated by MOCVD exhibits significant absorption of deep UV light, and the heterojunction's type-II band alignment with NiO is responsible for its exceptional self-powered pyrophotoelectric detecting and rectifying capabilities.

The development of next-generation materials such as hBN and Ga 2 O 3 remains a topic of intense focus owing to their suitability for efficient deep ultraviolet (DUV) emission and power electronic applications. In this study, we combine p-type hBN and n-type Ga 2 O 3 , forming a pseudo-vertical pn hBN/Ga 2 O 3 heterojunction device. Rectification ratios > 10 5 (300 K) and [Formula: see text]400 (475 K) are observed and are amongst the highest values reported to date for ultra-thin hBN-based pn junctions. The measured current under forward bias is ~2 mA, which we attribute to the shallow Mg acceptor level (60 meV), and 0.2 µA at -10 V. Critically, device performance remains stable and highly repeatable after a multitude of temperature ramps to 475 K. Capacitance-voltage measurements indicate widening the depletion region under increasing reverse bias voltage and a built-in voltage of 2.34 V is recorded. The hBN p-type characteristic is confirmed by Hall effect, a hole concentration of [Formula: see text] cm -3 and mobility of 24.8 cm 2 /Vs is achieved. Mg doped hBN resistance reduces by >10 8 compared to intrinsic material. Future work shall focus on the optical emission properties of this material system., (© 2024. The Author(s).)

In this study, arrays of μLEDs in four different sizes (5 × 5 μm 2 , 10 × 10 μm 2 , 25 × 25 μm 2 , 50 × 50 μm 2 ) were fabricated using a flip-chip bonding process. Two passivation processes were investigated with one involving a single layer of SiO 2 deposited using plasma-enhanced chemical vapor deposition (PECVD) and the other incorporating Al 2 O 3 deposited by atomic layer deposition (ALD) beneath the SiO 2 layer. Owing to superior coverage and protection, the double-layers passivation process resulted in a three-order lower leakage current of μLEDs in the 5 μm chip-sized μLED arrays. Furthermore, higher light output power of μLEDs was observed in each chip-sized μLED array with double layers passivation. Particularly, the highest EQE value 21.9% of μLEDs array with 5 μm × 5 μm chip size was achieved with the double-layers passivation. The EQE value of μLEDs array was improved by 4.4 times by introducing the double-layers passivation as compared with that of μLEDs array with single layer passivation. Finally, more uniform light emission patterns were observed in the μLEDs with 5 μm × 5 μm chip size fabricated by double-layer passivation process using ImageJ software., (© 2024. The Author(s).)

In this study, a 3 × 3 blue micro-LED array with a pixel size of 10 × 10 μm 2 and a pitch of 15 μm was fabricated on an epilayer grown on a sapphire substrate using metalorganic chemical vapor deposition technology. The fabrication process involved photolithography, wet and dry etching, E-beam evaporation, and ion implantation technology. Arsenic multi-energy implantation was utilized to replace the mesa etching for electrical isolation, where the implantation depth increased with the average energy. Different ion depth profiles had varying effects on electrical properties, such as forward current and leakage currents, potentially causing damage to the n-GaN layer and increasing the series resistance of the LEDs. As the implantation depth increased, the light output power and peak external quantum efficiency of the LEDs also increased, improving from 5.33 to 9.82%. However, the efficiency droop also increased from 46.3 to 48.6%., (© 2024. The Author(s).)

The demand for highly sensitive and selective gas sensors has been steadily increasing, driven by applications in various fields such as environmental monitoring, healthcare, and industrial safety. In this context, ternary alloy indium aluminum nitride (InAlN) semiconductors have emerged as a promising material for gas sensing due to their unique properties and tunable material characteristics. This work focuses on the fabrication and characterization of InAlN nanorods grown on sapphire substrates using an ultra-high vacuum magnetron sputter epitaxy with precise control over indium composition and explores their potential for acetone-gas-sensing applications. Various characterization techniques, including XRD, SEM, and TEM, demonstrate the structural and morphological insights of InAlN nanorods, making them suitable for gas-sensing applications. To evaluate the gas-sensing performance of the InAlN nanorods, acetone was chosen as a target analyte due to its relevance in medical diagnostics and industrial processes. The results reveal that the InAlN nanorods exhibit a remarkable sensor response of 2.33% at 600 ppm acetone gas concentration at an operating temperature of 350 °C, with a rapid response time of 18 s. Their high sensor response and rapid response make InAlN a viable candidate for use in medical diagnostics, industrial safety, and environmental monitoring.

Thin film p-side up vertical-cavity surface-emitting lasers (VCSELs) with 940 nm wavelength on a composite metal (Copper/Invar/Copper; CIC) substrate has been demonstrated by twice-bonding transfer and substrate removing techniques. The CIC substrate is a sandwich structure with a 10 µm thick Copper (Cu) layer/30 µm thick Invar layer/10 µm thick Cu layer. The Invar layer was composed of Iron (Fe) and Nickel (Ni) with a proportion of 70:30. The thermal expansion coefficient of the composite CIC metal can match that of the GaAs substrate. It results that the VCSEL layers can be successfully transferred to CIC metal substrate without cracking. At 1 mA current, the top-emitting VCSEL/GaAs and thin-film VCSEL/CIC had a voltage of 1.39 and 1.37 V, respectively. The optical output powers of VCSEL/GaAs and VCSEL/CIC were 21.91 and 24.40 mW, respectively. The 50 µm thick CIC substrate can play a good heat dissipation function, which results in improving the electrical and optical characteristics of thin film VCSELs/CIC. The VCSEL/CIC exhibited a superior thermal management capability as compared with VCSEL/GaAs. The obtained data suggested that VCSELs on a composite metal substrate not only affected significantly the characteristics of thin film VCSEL, but also improved considerably the device thermal performance., (© 2023. The Author(s).)

The current confinement effect on the micro-LED (μLED) with a 10 μm dimension was simulated using SpeCLED software. In this study, three p-contact sizes were considered: 2 μm × 2 μm, 5 μm × 5 μm, and 8 μm × 8 μm dimensions for μLEDs with a 10 μm dimension. According to the simulation data, the highest external quantum efficiency (EQE) of 13.24% was obtained with a 5 μm × 5 μm contact size. The simulation data also showed that the μLEDs with narrow contact sizes experienced higher operating temperatures due to the current crowding effect. The experimental data revealed a red-shift effect in narrow contact sizes, indicating higher heat generation in those devices. As the contact sizes increased from 2 to 8 μm, the turn-on voltage decreased due to lower equivalent resistance. Additionally, the leakage current increased from 44 pA to 1.6 nA at a reverse voltage of -5 V. The study found that the best performance was achieved with a contact ratio of 0.5, which resulted in the highest EQE at 9.95%. This superior performance can be attributed to the better current confinement of the μLED compared to the μLED with a contact ratio of 0.8, resulting in lower leakage current and improved current spreading when compared to the μLED with a contact ratio of 0.2., Competing Interests: The authors declare no competing financial interest., (© 2023 The Authors. Published by American Chemical Society.)

In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm 2 . These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications., (© 2023. The Author(s).)

In this work, we demonstrated Ga 2 O 3 -based power MOSFETs grown on c-plane sapphire substrates using in-situ TEOS doping for the first time. The β-Ga 2 O 3 :Si epitaxial layers were formed by the metalorganic chemical vapor deposition (MOCVD) with a TEOS as a dopant source. The depletion-mode Ga 2 O 3 power MOSFETs are fabricated and characterized, showing the increase of the current, transconductance, and breakdown voltage at 150 °C. In addition, the sample with the TEOS flow rate of 20 sccm exhibited a breakdown voltage of more than 400 V at RT and 150 °C, indicating that the in-situ Si doping by TEOS in MOCVD is a promising method for Ga 2 O 3 power MOSFETs., (© 2023. The Author(s).)

Generally, the inductively coupled plasma-reactive ion etching (ICP-RIE) mesa technology was used to remove p-GaN/MQWs and expose n-GaN for electrical contact in a fabricated micro light-emitting diode (μLED). In this process, the exposed sidewalls were significantly damaged which result in small-sized μLED presenting a strong size-dependent influence. Lower emission intensity was observed in the μLED chip, which can be attributed to the effect of sidewall defect during etch processing. To reduce the non-radiative recombination, the ion implantation using an As + source to substitute the ICP-RIE mesa process was introduced in this study. The ion implantation technology was used to isolate each chip to achieve the mesa process in the μLED fabrication. Finally, the As + implant energy was optimized at 40 keV, which exhibited excellent current-voltage characteristics, including low forward voltage (3.2 V @1 mA) and low leakage current (10 -9 A@- 5 V) of InGaN blue μLEDs. The gradual multi-energy implantation process from 10 to 40 keV can further improve the electrical properties (3.1 V @1 mA) of μLEDs, and the leakage current was also maintained at 10 -9 A@- 5 V., (© 2023. The Author(s).)

In this study, deep-ultraviolet light-emitting diodes (DUV LEDs) with different chip sidewall geometries (CSGs) are investigated. The structure had two types of chip sidewall designs that combined DUV LEDs with the same p-GaN thickness. By comparing the differences of the characteristics such as the external quantum efficiency droops, light output power, light extraction efficiency (LEE), and junction temperature of these DUV LEDs, the self-heated effect and light-tracing simulation results have been clearly demonstrated to explain the inclined sidewalls that provide more possibility pathway for photons escape to increase the LEE of LEDs; thus, the DUV LEDs with the CSG presented improved performance. These results demonstrate the potential of CSG for DUV LED applications.

In this study, the effect of ITO contact ratio for blue light micro-light-emitting diode (µLED) with dimensions 40 μm × 40 μm was assessed. The contact ratio from 0.2 to 0.8 was designed for the ratio of electrode area to light-emitting area. As the contact ratio increased from 0.2 to 0.8, the turn-on voltage of µLED decreased. It could be due to the short lateral diffusion length in multiple quantum wells (MQW) and lower parallel resistance for the µLED with a large contact ratio. The leakage currents of single µLED were below 5.1 × 10 -9 A, no matter the contact ratio. It means that the contact ratio does not affect the leakage current as measured on single chip. Moreover, µLED array with a 0.8 contact ratio presented the highest output power than other samples (5.25 mW as the current density of 1875 A/cm 2 ). It could attribute to the MQWs usage, the metal contact reflective behavior and less current crowding, which generated more carriers and extracted more lighting from the µLED. The simulation data using SpeCLED software agreed well with these experiments, and µLED with a 0.8 contact ratio showed the best optoelectronic properties., (© 2022. The Author(s).)

This study fabricated high-voltage, low-current DUV-LEDs by connecting two devices. Due to better current spreading and the enhanced reflective mirror effect, high-voltage devices present a higher dynamic resistance, emission output power, wall-plug efficiency, external quantum efficiency, and view angle than single traditional devices. The study found that when the injection current was 320 mA, the maximum output power was exhibited at 47.1 mW in the HV sample. The maximum WPE and EQE of high-voltage DUV-LEDs were 2.46% and 5.48%, respectively. Noteworthily, the redshift wavelength shifted from 287.5 to 280.5 nm, less than the traditional device-from 278 to 282 nm. Further, due to the uniform emission patterns in high-voltage devices, the view angle presents 130 degrees at 100 mA input current. In this study, the high-voltage device showed more excellent properties than the traditional device. In particular, it presented a high potential application in high-voltage circuits, which can remove transformers to eliminate extra power consumption.

β-Gallium oxide (Ga 2 O 3 ) has received intensive attention in the scientific community as a significant high-power switching semiconductor material because of its remarkable intrinsic physical characteristics and growth stability. This work reports the heteroepitaxial growth of the β-Ga 2 O 3 ultrathin film on a sapphire substrate via mist chemical vapor deposition (CVD). This study used a simple solution-processed and nonvacuum mist CVD method to grow a heteroepitaxial β-Ga 2 O 3 thin film at 700 °C using a Ga precursor and carrier gases such as argon and oxygen. Various characterization techniques were used to determine the properties of the thin film. Additionally, a computational study was performed to study the temperature distribution and different mist velocity profiles of the finite element mist CVD model. This simulation study is essential for investigating low to high mist velocities over the substrate and applying low velocity to carry out experimental work. XRD and AFM results show that the β-Ga 2 O 3 thin film is grown on a sapphire substrate of polycrystalline nature with a smooth surface. HR-TEM measurement and UV-visible transmission spectrometry demonstrated heteroepitaxial β-Ga 2 O 3 in an ultrathin film with a band gap of 4.8 eV., Competing Interests: The authors declare no competing financial interest., (© 2022 The Authors. Published by American Chemical Society.)

We fabricated a gas sensor with a wide-bandgap ZnGa 2 O 4 (ZGO) epilayer grown on a sapphire substrate by metalorganic chemical vapor deposition. The ZGO presented (111), (222) and (333) phases demonstrated by an X-ray diffraction system. The related material characteristics were also measured by scanning electron microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. This ZGO gas sensor was used to detect nitric oxide (NO) in the parts-per-billion range. In this study, the structure effect on the response of the NO gas sensor was studied by altering the sensor dimensions. Two approaches were adopted to prove the dimension effect on the sensing mechanism. In the first approach, the sensing area of the sensors was kept constant while both channel length (L) and width (W) were varied with designed dimensions (L × W) of 60 × 200, 80 × 150, and 120 ×100 μm 2 . In the second, the dimensions of the sensing area were altered (60, 40, and 20 μm) with W kept constant. The performance of the sensors was studied with varying gas concentrations in the range of 500 ppb~10 ppm. The sensor with dimensions of 20 × 200 μm 2 exhibited a high response of 11.647 in 10 ppm, and 1.05 in 10 ppb for NO gas. The sensor with a longer width and shorter channel length exhibited the best response. The sensing mechanism was provided to explain the above phenomena. Furthermore, the reaction between NO and the sensor surface was simulated by O exposure of the ZGO surface in air and calculated by first principles.

Due to the emergence of electric vehicles, power electronics have become the new focal point of research. Compared to commercialized semiconductors, such as Si, GaN, and SiC, power devices based on β-Ga 2 O 3 are capable of handling high voltages in smaller dimensions and with higher efficiencies, because of the ultrawide bandgap (4.9 eV) and large breakdown electric field (8 MV cm -1 ). Furthermore, the β-Ga 2 O 3 bulk crystals can be synthesized by the relatively low-cost melt growth methods, making the single-crystal substrates and epitaxial layers readily accessible for fabricating high-performance power devices. In this article, we first provide a comprehensive review on the material properties, crystal growth, and deposition methods of β-Ga 2 O 3 , and then focus on the state-of-the-art depletion mode, enhancement mode, and nanomembrane field-effect transistors (FETs) based on β-Ga 2 O 3 for high-power switching and high-frequency amplification applications. In the meantime, device-level approaches to cope with the two main issues of β-Ga 2 O 3 , namely, the lack of p-type doping and the relatively low thermal conductivity, will be discussed and compared., Competing Interests: The authors declare no competing financial interest., (© 2022 The Authors. Published by American Chemical Society.)

This study utilized thin p-GaN, indium tin oxide (ITO), and a reflective passivation layer (RPL) to improve the performance of deep ultra-violet light-emitting diodes (DUV-LEDs). RPL reflectors, which comprise HfO 2 /SiO 2 stacks of different thickness to maintain high reflectance, were deposited on the DUV-LEDs with 40 nm-thick p-GaN and 12 nm-thick ITO thin films. Although the thin p-GaN and ITO films affect the operation voltage of DUV-LEDs, the highly reflective RPL structure improved the WPE and light extraction efficiency (LEE) of the DUV-LEDs, yielding the best WPE and LEE of 2.59% and 7.57%, respectively. The junction temperature of DUV-LEDs with thick p-GaN increased linearly with the injection current, while that of DUV-LEDs with thin p-GaN, thin ITO, and RPL was lower than that of the Ref-LED under high injection currents (> 500 mA). This influenced the temperature sensitive coefficients (dV/dT, dLOP/dT, and dWLP/dT). The thermal behavior of DUV-LEDs with p-GaN and ITO layers of different thicknesses with/without the RPL was discussed in detail.

In this research, five sizes (100 × 100, 75 × 75, 50 × 50, 25 × 25, 10 × 10 µm 2 ) of InGaN red micro-light emitting diode (LED) dies are produced using laser-based direct writing and maskless technology. It is observed that with increasing injection current, the smaller the size of the micro-LED, the more obvious the blue shift of the emission wavelength. When the injection current is increased from 0.1 to 1 mA, the emission wavelength of the 10 × 10 μm 2 micro-LED is shifted from 617.15 to 576.87 nm. The obvious blue shift is attributed to the stress release and high current density injection. Moreover, the output power density is very similar for smaller chip micro-LEDs at the same injection current density. This behavior is different from AlGaInP micro-LEDs. The sidewall defect is more easily repaired by passivation, which is similar to the behavior of blue micro-LEDs. The results indicate that the red InGaN epilayer structure provides an opportunity to realize the full color LEDs fabricated by GaN-based LEDs., (© 2022. The Author(s).)

The mechanism of carrier recombination in downsized μ-LED chips from 100 × 100 to 10 × 10 μm 2 on emission performance was systemically investigated. All photolithography processes for defining the μ-LED pattern were achieved by using a laser direct writing technique. This maskless technology achieved the glass-mask-free process, which not only can improve the exposure accuracy but also save the development time. The multi-functional SiO 2 film as a passivation layer successfully reduced the leakage current density of μ-LED chips compared with the μ-LED chips without passivation layer. As decreasing the chip size to 10 × 10 μm 2 , the smallest chip size exhibited the highest ideality factor, which indicated the main carrier recombination at the high-defect-density zone in μ-LED chip leading to the decreased emission performance. The blue-shift phenomenon in the electroluminescence spectrum with decreasing the μ-LED chip size was due to the carrier screening effect and the band filling effect. The 10 × 10 μm 2 μ-LED chip exhibited high EQE values in the high current density region with a less efficiency droop, and the max-EQE value was 18.8%. The luminance of 96 × 48 μ-LED array with the chip size of 20 × 20 μm 2 exhibited a high value of 516 nits at the voltage of 3 V., (© 2021. The Author(s).)

In this study, deep ultraviolet light-emitting diodes (DUV-LEDs) with a reflective passivation layer (RPL) were investigated. The RPL consists of HfO 2 /SiO 2 stacks as distributed Bragg reflectors, which are deposited on two DUV-LEDs with different p-GaN thicknesses. The RPL structure improved the external quantum efficiency droops of the DUV-LEDs with thick and thin p-GaN, thereby increasing their light output power by 18.4% and 39.4% under injection current of 500 mA and by 17.9% and 37.9% under injection current of 1000 mA, respectively. The efficiency droops of the DUV-LEDs with and without the RPL with thick p-GaN were 20.1% and 19.1% and with thin p-GaN were 18.0% and 15.6%, respectively. The DUV-LEDs with the RPL presented improved performance. The above results demonstrate the potential for development of the RPLs for DUV-LED applications.

In this paper, thin film AlGaInP LED chips with a 50 μm thick composite metal substrate (Copper-Invar-Copper; CIC) were obtained by the wet etching process. The pattern of the substrate was done by the backside of the AlGaInP LED/CIC. There was no delamination or cracking phenomenon of the LED epilayer which often occurs by laser or mechanical dicing. The chip area was 1140 μm × 1140 μm and the channel length was 360 μm. The structure of the CIC substrate was a sandwich structure and consisted of Cu as the top and bottom layers, with a thickness of 10 μm, respectively. The middle layer was Invar with a 30% to 70% ratio of Ni and Fe and a total thickness of 30 μm. The chip pattern was successfully obtained by the wet etching process. Concerning the device performance after etching, high-performance LED/CIC chips were obtained. They had a low leakage current, high output power and a low red shift phenomenon as operated at a high injected current. After the development and fabrication of the copper-based composite substrate for N-side up thin-film AlGaInP LED/CIC chips could be diced by wet etching. The superiority of wet etching process for the AlGaInP LED/CIC chips is over that of chips obtained by mechanical or laser dicing.

Growth of InGaN, having high Indium composition without compromising crystal quality has always been a great challenge to obtain efficient optical devices. In this work, we extensively study the impact of non-radiative defects on optical response of the plasma assisted molecular beam epitaxy (PA-MBE) grown InGaN nanowires, emitting in the higher wavelength regime ([Formula: see text] nm). Our analysis focuses into the effect of defect saturation on the optical output, manifested by photoluminescence (PL) spectroscopy. Defect saturation has not so far been thoroughly investigated in InGaN based systems at such a high wavelength, where defects play a key role in restraining efficient optical performance. We argue that with saturation of defect states by photo-generated carriers, the advantages of carrier localization can be employed to enhance the optical output. Carrier localization arises because of Indium phase segregation, which is confirmed from wide PL spectrum and analysis from transmission electron microscopy (TEM). A theoretical model has been proposed and solved using coupled differential rate equations in steady state to undertake different phenomena, occurred during PL measurements. Analysis of the model helps us understand the impact of non-radiative defects on PL response and identifying the origin of enhanced radiative recombination.

Spinel ZnGa 2 O 4 has received significant attention from researchers due to its wide bandgap and high chemical and thermal stability; hence, paving the way for it to have potential in various applications. This review focuses on its physical, optical, mechanical and electrical properties, contributing to the better understanding of this material. The recent trends for growth techniques and processing in the research and development of ZnGa 2 O 4 from bulk crystal growth to thin films are discussed in detail for device performance. This material has excellent properties and is investigated widely in deep-ultraviolet photodetectors, gas sensors and phosphors. In this article, effects of substrate temperature, annealing temperature, oxygen partial pressure and zinc/gallium ratio are discussed for device processing and fabrication. In addition, research progress and future outlooks are also identified.

In this paper, semi-polar (20[Formula: see text]1) InGaN blue light-emitting diodes (LEDs) were fabricated and compared the performance with those of LEDs grown on c-plane sapphire substrate. LEDs with different chip sizes of 100 μm × 100 μm, 75 μm × 75 μm, 25 μm × 25 μm, and 10 μm × 10 μm were used to study the influence of chip size on the device performance. It was found that the contact behavior between the n electrode and the n-GaN layer for the semi-polar (20[Formula: see text]1) LEDs was different from that for the LEDs grown on the c-plane device. Concerning the device performance, the smaller LEDs provided a larger current density under the same voltage and presented a smaller forward voltage. However, the sidewall's larger surface to volume ratio could affect the IQE. Therefore, the output power density reached the maximum with the 25 μm × 25 μm chip case. In addition, the low blue-shift phenomenon of semi-polar (20[Formula: see text]1) LEDs was obtained. The larger devices exhibited the maximum IQE at a lower current density than the smaller devices, and the IQE had a larger droop as the current density increased for the LEDs grown on c-plane sapphire substrate.

In this work, we demonstrate a novel high-power vertical-cavity surface-emitting laser (VCSEL) array with highly single-mode (SM) and single-polarized output performance without significantly increasing the intra-cavity loss and threshold current ( I th). By combining a low-loss zinc-diffusion aperture with an electroplated copper substrate, we can obtain a highly SM output (side mode suppression ratio >50 d B ) with a very narrow divergence angle (1/ e 2 :∼10 ∘ ) under high output power (3.1 W; 1% duty cycle) and sustain a single polarization state, with a polarization suppression ratio of around 9 dB, under the full range of bias currents. Compared to the reference device without the copper substrate, the demonstrated array can not only switch the output optical spectra from quasi-SM to highly SM but also maintain a close threshold current value ( I th: 0.8 versus 0.7 mA per unit device) and slope efficiency. The enhancement in fundamental mode selectivity of our VCSEL structure can be attributed to the single-polarized lasing mode induced by tensile strain, which is caused by the electroplated copper substrate, as verified by the double-crystal x-ray measurement results.

Self-heating effect is a major limitation in achieving the full performance potential of high power GaN power devices. In this work, we reported a micro-trench structure fabricated on the silicon substrate of an AlGaN/GaN high electron mobility transistor (HEMT) via deep reactive ion etching, which was subsequently filled with high thermal conductive material, copper using the electroplating process. From the current-voltage characteristics, the saturation drain current was improved by approximately 17% with the copper filled micro-trench structure due to efficient heat dissipation. The I DS difference between the pulse and DC bias measurement was about 21% at high bias V DS due to the self-heating effect. In contrast, the difference was reduced to approximately 8% for the devices with the implementation of the proposed structure. Using Micro-Raman thermometry, we showed that temperature near the drain edge of the channel can be lowered by approximately ~22 °C in a HEMT operating at ~10.6 Wmm -1 after the implementation of the trench structure. An effective method for the improvement of thermal management to enhance the performance of GaN-on-Silicon HEMTs was demonstrated.

Despite III-V semiconductors demonstrating extraordinary solar-to-hydrogen (STH) conversion efficiencies, high cost and poor stability greatly impede their practical implementation in photoelectrochemical (PEC) water splitting applications. Here, we present a simple and efficient strategy for III-V-based photoelectrodes that functionally and spatially decouples the light harvesting component of the device from the electrolysis part that eliminates parasitic light absorption, reduces the cost, and enhances the stability without any compromise in efficiency. The monolithically integrated PEC cell was fabricated by an epitaxial lift-off and transfer of inversely grown InGaP/GaAs to a robust Ni-substrate and the resultant photoanode exhibits an STH efficiency of ~9% with stability ~150 h. Moreover, with the ability to access both sides of the device, we constructed a fully-integrated, unassisted-wireless "artificial leaf" system with an STH efficiency of ~6%. The excellent efficiency and stability achieved herein are attributed to the light harvesting/catalysis decoupling scheme, which concurrently improves the optical, electrical, and electrocatalytic characteristics.

A gas sensor based on a ZnGa 2 O 4 (ZGO) thin film grown by metalorganic chemical vapor deposition operated under the different temperature from 25 °C to 300 °C is investigated in this study. This sensor shows great sensing properties at 300 °C. The sensitivity of this sensor is 22.21 as exposed to 6.25 ppm of NO and its response time is 57 s. Besides that, the sensitivities are 1.18, 1.27, 1.06, and 1.00 when exposed to NO 2 (500 ppb), SO 2 (125 ppm), CO (125 ppm), and CO 2 (1500 ppm), respectively. These results imply that the ZGO gas sensor not only has high sensitivity, but also has great selectivity for NO gas. Moreover, the obtained results suggest that ZGO sensors are suitable for the internet of things(IOT) applications.

The fabrication and feasibility assessment of n-side up, thin-epilayer, AlGaInP-based vertical light-emitting-diodes (LEDs; emitting area: 1 mm × 1 mm) with a copper-invar-copper-composite metal (CIC) substrate was obtained by wafer bonding and epilayer transferring technologies. The structure of CIC substrate is a top Cu layer of 20 μm, a middle Invar layer of 64 μm, and a bottom Cu layer of 20 μm. The invar layer consists of Fe and Ni at a ratio of 70% to 30%. The coefficient of thermal expansion for CIC is about 6.1 × 10 -6 /K, which is similar to that of the GaAs substrate (5.7 × 10 -6 /K) and AlGaInP epilayers. Due to the high thermal conductivity (160 W/m-K) of 104-μm-thick CIC, the high performances of the packaged LEDs are obtained. They present a low red shift phenomenon (from 623 to 642 nm for 100 mA to 1 A) and a high output power 212 mW at 800 mA. The CIC substrate can be extended to fabricate high-efficiency thin film LEDs with conventional vertical electrodes.

The integration of III-V and Si multi-junction solar cells as photovoltaic devices has been studied in order to achieve high photovoltaic conversion efficiency. However, large differences in the coefficients of thermal expansion and the lattice parameters of GaAs, Si, and InGaAs have made it difficult to obtain high-efficiency solar cells grown as epilayers on Si and InP substrates. In this paper, two types of devices, including GaInP/GaAs stacked on Si (GaInP/GaAs//Si) and GaInP/GaAs stacked on InGaAs (GaInP/GaAs//InGaAs), are fabricated via mechanical stacking and wire bonding technologies. Mechanically stacked GaInP/GaAs//Si and GaInP/GaAs//InGaAs triple-junction solar cells are prepared via glue bonding. Current-voltage measurements of the two samples are made at room temperature. The short-circuit current densities of the GaInP/GaAs//Si and GaInP/GaAs//InGaAs solar cells are 13.37 and 13.66 mA/cm 2 , while the open-circuit voltages of these two samples are measured to be 2.71 and 2.52 V, respectively. After bonding the GaInP/GaAs dual-junction with the Si and InGaAs solar cells, the conversion efficiency is relatively improved by 32.6% and 30.9%, respectively, compared to the efficiency of the GaInP/GaAs dual-junction solar cell alone. This study demonstrates the high potential of combining mechanical stacked with wire bonding and ITO films to achieve high conversion efficiency in solar cells with three or more junctions.

Nerve injury-induced neuropathic pain is difficult to treat. In this study, we used exosomes derived from human umbilical cord mesenchymal stem cell (UCMSC) as a cell-free therapy for nerve injury-induced pain in rats. Isolated UCMSC exosomes range in size from 30 to 160 nm and contain CD63, HSP60, and CD81 exosome markers. After L5/6 spinal nerve ligation surgery, single intrathecal injection of exosomes reversed nerve ligation-induced mechanical and thermal hypersensitivities of right hindpaw of rats at initial and well-developed pain stages. Moreover, continuous intrathecal infusion of exosomes achieved excellent preventive and reversal effects for nerve ligation-induced pain. In immunofluorescent study, lots of Exo-green-labelled exosomes could be found majorly in the ipsilateral L5 spinal dorsal horn, dorsal root ganglion, and peripheral axons, suggesting the homing ability of UCMSC exosomes. They also appeared in the central terminals or cell bodies of IB4, CGRP, and NF200 sensory neurons. In addition, exosome treatment suppressed nerve ligation-induced upregulation of c-Fos, CNPase, GFAP, and Iba1. All these data suggest that the analgesic effects of exosomes may involve their actions on neuron and glial cells. Exosomes also inhibited the level of TNF-α and IL-1β, while enhanced the level of IL-10, brain-derived neurotrophic factor, and glial cell line-derived neurotrophic factor in the ipsilateral L5/6 dorsal root ganglion of nerve-ligated rats, indicating anti-inflammatory and proneurotrophic abilities. Protein analysis revealed the content of vascular endothelial growth factor C, angiopoietin-2, and fibroblast growth factor-2 in the exosomes. In summary, intrathecal infusion of exosomes from UCMSCs may be considered as a novel therapeutic approach for nerve injury-induced pain.

A single-crystalline ZnGa 2 O 4 epilayer was successfully grown on c-plane (0001) sapphire substrate by metal-organic chemical vapor deposition. This epilayer was used as a ternary oxide semiconductor for application in high-performance metal-semiconductor-metal photoconductive deep-ultraviolet (DUV) photodetectors (PDs). At a bias of 5 V, the annealed ZnGa 2 O 4 PDs showed better performance with a considerably low dark current of 1 pA, a responsivity of 86.3 A/W, cut-off wavelength of 280 nm, and a high DUV-to-visible discrimination ratio of approximately 10 7 upon exposure to 230 nm DUV illumination than that of as-grown ZnGa 2 O 4 PDs. The as-grown PDs presented a dark current of 0.5 mA, a responsivity of 2782 A/W at 230 nm, and a photo-to-dark current contrast ratio of approximately one order. The rise time of annealed PDs was 0.5 s, and the relatively quick decay time was 0.7 s. The present results demonstrate that annealing process can reduce the oxygen vacancy defects and be potentially applied in ZnGa 2 O 4 film-based DUV PD devices, which have been rarely reported in previous studies.

In this paper, we report the epitaxial growth and material characteristics of AlGaN (Al mole fraction of 10%) on an AlN/nanopatterned sapphire substrate (NPSS) template by hydride vapor phase epitaxy (HVPE). The crystalline quality, surface morphology, microstructure, and stress state of the AlGaN/AlN/NPSS epilayers were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and transmission electron microscopy (TEM). The results indicate that the crystal quality of the AlGaN film could be improved when grown on the AlN/NPSS template. The screw threading dislocation (TD) density was reduced to 1.4 × 10⁸ cm -2 for the AlGaN epilayer grown on the AlN/NPSS template, which was lower than that of the sample grown on a flat c-plane sapphire substrate (6.3 × 10⁸ cm -2 ). As examined by XRD measurements, the biaxial tensile stress of the AlGaN film was significantly reduced from 1,187 MPa (on AlN/NPSS) to 38.41 MPa (on flat c-plane sapphire). In particular, an increase of the Al content in the overgrown AlGaN layer was confirmed by the TEM observation. This could be due to the relaxation of the in-plane stress through the AlGaN and AlN/NPSS template interface.

To acquire device-quality TiO x films usually needs high-temperature growth or additional post-thermal treatment. However, both processes make it very difficult to form the p-type TiO x even under oxygen-poor growth condition. With the aid of high energy generated by high power impulse magnetron sputtering (HIPIMS), a highly stable p-type TiO x film with good quality can be achieved. In this research, by varying the oxygen flow rate, p-type γ-TiO and n-type TiO 2 films were both prepared by HIPIMS. Furthermore, p- and n-type thin film transistors employing γ-TiO and TiO 2 as channel layers possess the field-effect carrier mobilities of 0.2 and 0.7 cm 2 /Vs, while their on/off current ratios are 1.7 × 10 4 and 2.5 × 10 5 , respectively. The first presented p-type γ-TiO TFT is a major breakthrough for fabricating the TiO x -based p-n combinational devices. Additionally, our work also confirms HIPIMS offers the possibility of growing both p- and n-type conductive oxides, significantly expanding the practical usage of this technique.

A hollow hemispherical polystyrene (HHPS) was fabricated to reduce total internal reflection in AlGaInP-based LEDs. At an injection current of 350 mA, the external quantum efficiencies of LED-I, LED-II, LED-III, and LED-IV are 20.92%, 24.65%, 27.28%, and 33.77% and the wall-plug efficiencies are 17.11%, 20%, 22.5%, and 27.33%, respectively. The enhanced performance is attributed to the light output power enhancement through the surface roughness, microlens-liked PS hemisphere, and scatter-liked HHPS array. In this paper, the rigorous coupled wave analysis (RCWA) numerical method was also conducted to demonstrate the HHPS array effectively enlarge the effective light cone.

Background and Objectives: Cannabinoid receptors (CB1R/CB2R) are known to play important roles in pain transmission. In this study, we investigated the effects of continuous intrathecal infusion of CB1/2R agonists in the L5/6 spinal nerve ligation pain model., Methods: Under isoflurane anesthesia, rats received nerve ligation and intrathecal catheter connected to an infusion pump. After surgery, saline (1 μL/h), CB1/2R agonist WIN55,212-2, CB1R agonist ACEA, or CB2R agonist AM1241 (1 μmol/h) was given intrathecally for 7 days. The mechanical and thermal sensitivities of rat hindpaw were determined by von Frey hair and radiant heat tests. The expression of CB1/2R and protein levels of CB1/2R, Iba1, glial fibrillary acidic protein, and tumor necrosis factor α were examined by immunofluorescence study and Western blotting., Results: On postligation day 7, rats that received WIN55,212-2, ACEA or AM1241 had significantly higher mean withdrawal thresholds (6.8, 8.4, and 10.2 g) and latencies (6.3, 7.3, and 9.1 seconds) than did saline-treated rats (1.7 g, 2.2 seconds). Cannabinoid receptors were expressed not only in IB4 (isolectin B4) and CGRP (calcitonin gene-related peptide) dorsal root ganglion neurons, their central terminals, and peripheral axons, but also in neurons, microglia, and astrocytes in spinal cord. Cannabinoid receptor agonists enhanced nerve ligation-induced up-regulation of cannabinoid receptor in spinal cord and dorsal root ganglion. Treatment with WIN55,212-2 or AM1241, but not ACEA, markedly reduced nerve ligation-induced up-regulation of Iba1, glial fibrillary acidic protein, and tumor necrosis factor α in spinal cord., Conclusions: Continuous intrathecal infusion of CB1/2R agonists elicits antinociception in the pain model. The mechanisms might involve their actions on neurons and glial cells. CB2R, but not CB1R, seems to play an important role in the regulation of nerve injury-induced neuroinflammation.

In this study, a 3-μm-thick AlGaN film with an Al mole fraction of 10% was grown on a nanoscale-patterned sapphire substrate (NPSS) using hydride vapor phase epitaxy (HVPE). The growth mechanism, crystallization, and surface morphology of the epilayers were examined using X-ray diffraction, transmission electron microscopy (TEM), and scanning electron microscopy at various times in the growth process. The screw threading dislocation (TD) density of AlGaN-on-NPSS can improve to 1-2 × 10⁸ cm -2 , which is significantly lower than that of the sample grown on a conventional planar sapphire substrate (7 × 10⁸ cm -2 ). TEM analysis indicated that these TDs do not subsequently propagate to the surface of the overgrown AlGaN layer, but bend or change directions in the region above the voids within the side faces of the patterned substrates, possibly because of the internal stress-relaxed morphologies of the AlGaN film. Hence, the laterally overgrown AlGaN films were obtained by HVPE, which can serve as a template for the growth of ultraviolet III-nitride optoelectronic devices., Competing Interests: The authors declare no conflict of interest.

The K + channel pore-forming subunit Kv4.3 is expressed in a subset of nonpeptidergic nociceptors within the dorsal root ganglion (DRG), and knockdown of Kv4.3 selectively induces mechanical hypersensitivity, a major symptom of neuropathic pain. K + channel modulatory subunits KChIP1, KChIP2, and DPP10 are coexpressed in Kv4.3 + DRG neurons, but whether they participate in Kv4.3-mediated pain control is unknown. Here, we show the existence of a Kv4.3/KChIP1/KChIP2/DPP10 complex (abbreviated as the Kv4 complex) in the endoplasmic reticulum and cell surface of DRG neurons. After intrathecal injection of a gene-specific antisense oligodeoxynucleotide to knock down the expression of each component in the Kv4 complex, mechanical hypersensitivity develops in the hindlimbs of rats in parallel with a reduction in all components in the lumbar DRGs. Electrophysiological data further indicate that the excitability of nonpeptidergic nociceptors is enhanced. The expression of all Kv4 complex components in DRG neurons is downregulated following spinal nerve ligation (SNL). To rescue Kv4 complex downregulation, cDNA constructs encoding Kv4.3, KChIP1, and DPP10 were transfected into the injured DRGs (defined as DRGs with injured spinal nerves) of living SNL rats. SNL-evoked mechanical hypersensitivity was attenuated, accompanied by a partial recovery of Kv4.3, KChIP1, and DPP10 surface levels in the injured DRGs. By showing an interdependent regulation among components in the Kv4 complex, this study demonstrates that K + channel modulatory subunits KChIP1, KChIP2, and DPP10 participate in Kv4.3-mediated mechanical pain control. Thus, these modulatory subunits could be potential drug targets for neuropathic pain. SIGNIFICANCE STATEMENT Neuropathic pain, a type of moderate to severe chronic pain resulting from nerve injury or disorder, affects 6.9%-10% of the global population. However, less than half of patients report satisfactory pain relief from current treatments. K + channels, which act to reduce nociceptor activity, have been suggested to be novel drug targets for neuropathic pain. This study is the first to show that K + channel modulatory subunits KChIP1, KChIP2, and DPP10 are potential drug targets for neuropathic pain because they form a channel complex with the K + channel pore-forming subunit Kv4.3 in a subset of nociceptors to selectively inhibit mechanical hypersensitivity, a major symptom of neuropathic pain., (Copyright © 2017 the authors 0270-6474/17/374391-14$15.00/0.)

The NF-κB (nuclear factor κ-light-chain-enhancer of activated B cells) transcription factor family is a pleiotropic regulator of many cellular signaling pathways, providing a mechanism for the cells in response to a wide variety of stimuli linking to inflammation. The stimulated cells will be regulated by not only the canonical but also non-canonical NF-κB pathways. To initiate both of these pathways, IκB-degradation triggers NF-κB release and the nuclear translocated-heterodimer (or homodimer) can associate with the κB sites of promoter to regulate the gene transcriptions. NF-κB ubiquitously expresses in neurons and the constitutive NF-κB activation is associated with processing of neuronal information. NF-κB can regulate the transcription of genes such as chemokines, cytokines, proinflammatory enzymes, adhesion molecules, proinflammatory transcription factors, and other factors to modulate the neuronal survival. In neuronal insult, NF-κB constitutively active in neuron cell bodies can protect neurons against different injuries and regulate the neuronal inflammatory reactions. Besides neurons, NF-κB transcription factors are abundant in glial cells and cerebral blood vessels and the diverse functions of NF-κB also regulate the inflammatory reaction around the neuronal environment. NF-κB transcription factors are abundant in the brain and exhibit diverse functions. Several central nerve system (CNS) diseases are linked to NF-κB activated by inflammatory mediators. The RelA and c-Rel expression produce opposite effects on neuronal survival. Importantly, c-Rel expression in CNS plays a critical role in anti-apoptosis and reduces the age-related behaviors. Moreover, the different subunits of NF-κB dimer formation can modulate the neuroninflammation, neuronal protection, or neurotoxicity. The diverse functions of NF-κB depend on the subunits of the NF-κB dimer-formation which enable us to develop a therapeutic approach to neuroinflammation based on a new concept of inflammation as a strategic tool in neuronal cells. However, the detail role of NF-κB in neuroinflammation, remains to be clarified. In the present article, we provide an updated review of the current state of our knowledge about relationship between NF-κB and neuroinflammation.

Flexible InGaN-based green light emitting diodes (LEDs) were fabricated by transferring epilayer to a flexible polyimide substrate with laser lift-off (LLO) and double-transfer technologies. We present a method of increasing light output power in flexible LEDs without modifying their epitaxial layers. These improvements are achieved by reducing the quantum-confined Stark effect by reducing piezoelectric polarization that results from compressive stress in the GaN epilayer. The compressive stress is relaxed due to the external stress induced by increasing bending displacement of flexible substrate. The light output power of the flexible LED at an injection current of 150 mA is increased by approximately 42.2%, as the external bending went to the case of effective length of 15 mm. The experimental results demonstrated that applying external tensile stress effectively compensates for the compressive strain and changes the piezoelectric field in the InGaN/GaN MQWs region, thereby increases the probability of radiative recombination.

Elevated nerve growth factor (NGF) in the contralateral dorsal root ganglion (DRG) mediates mirror-image pain after peripheral nerve injury, but the underlying mechanism remains unclear. Using intrathecal injection of NGF antibodies, we found that NGF is required for the development of intra-DRG synapse-like structures made by neurite sprouts of calcitonin gene-related peptide (CGRP(+)) nociceptors and sympathetic axons onto neurite sprouts of Kv4.3(+) nociceptors. These synapse-like structures are formed near NGF-releasing satellite glia surrounding large DRG neurons. Downregulation of the postsynaptic protein PSD95 with a specific shRNA largely eliminates these synapse-like structures, suppresses activities of Kv4.3(+) but not CGRP(+) nociceptors, and attenuates mirror-image pain. Furthermore, neutralizing the neurotransmitter norepinephrine or CGRP in the synapse-like structures by antibodies has similar analgesic effect. Thus, elevated NGF after peripheral nerve injury induces neurite sprouting and the formation of synapse-like structures within the contralateral DRG, leading to the development of chronic mirror-image pain.

This study demonstrates the flexible white LED structure with high lumen efficiency and uniform optical performance for neutral white and warm white CCT. Flip-chip LEDs were attached on a polyimide substrate with copper strips as electrical and thermal conduction paths. Yellow phosphors are mixed with polydimenthysiloxane (PDMS) to provide mechanical support and flexibility. The light efficiency of this device can reach 120 lm/W and 85% of light output uniformity of the emission area can be achieved. Moreover, the optical simulation is employed to evaluate various designs of this flexible film in order to obtain uniform output. Both the pitch between the individual devices and the thickness of the phosphor film are calculated for optimization purpose. This flexible white LED with high lumen efficiency and good reliability is suitable for the large area fixture in the general lighting applications.

In this study, the thin-film vertical-type AlGaInP LEDs on Cu substrates were fabricated. By performing the epitaxial lift-off (ELO) process, the LED device can be transferred from GaAs to Cu substrate. Then the GaAs substrate was separated and the ELO-LED was completed. To overcome the drawback of crack formation in the epilayer during the ELO process, various patterned Cu substrates were designed. Moreover, the finite element method was used to simulate the stress distribution in the LED sample during the ELO process. From the simulation results, an optimum structure of patterned Cu substrate was obtained since its maximum stress can be confined to the chip edges and the stress was decreased significantly during the ELO process, resulting in an apparent reduction of crack generation after separating the GaAs substrate. This optimum patterned Cu substrate was employed for the fabrication of ELO-LED. In addition, the chemical etching process was also used to etch the GaAs substrate, and this device transferred to Cu substrate was denoted as CE-LED. Based on the measurements of device performances, the forward voltages (@350 mA) of the CE-LED and ELO-LED were measured to be 2.20 and 2.29 V, while the output powers (@350 mA) of these two devices were 49.9 and 48.2 mW, respectively. Furthermore, the surface temperatures (@350 mA) of these two samples were 46.9-48.3 and 45.2-47.0 °C, respectively. Obviously, the device characteristics of the ELO-LED are very similar to those of the CE-LED. It confirms that the design of patterned Cu substrate is very helpful to obtain the thin-film vertical-type AlGaInP LEDs. Additionally, via the ELO process, the separated GaAs substrate can be reused for production cost down.

A composite AlSi alloy substrate was fabricated to eliminate thermal expansion coefficient mismatch in high-power vertical light-emitting diodes (VLEDs). At 2000-mA injection current, the light output power performance of LED/sapphire, VLED/Si, and VLED/AlSi are 1458, 2465, and 2499 mW and the wall-plug efficiencies are 13.66%, 26.39%, and 28.02%, respectively. The enhanced performance is attributable to the lower tensile stress and series resistance in VLED/AlSi than in LED/sapphire. The surface temperature of LED/AlSi is almost identical to and lower than that of LED/Si and LED/sapphire, respectively. Raman spectroscopy confirms that the residual strain in GaN film bonding on the composite AlSi is lower than that on bulk sapphire.

In this study, a spin coating process in which the grating structure comprises an Ag nanoparticle layer coated on a p-GaN top layer of InGaN/GaN light-emitting diode (LED) was developed. Various sizes of plasmonic nanoparticles embedded in a transparent conductive layer were clearly observed after the deposition of indium tin oxide (ITO). The plasmonic nanostructure enhanced the light extraction efficiency of blue LED. Output power was 1.8 times the magnitude of that of conventional LEDs operating at 350 mA, but retained nearly the same current-voltage characteristic. Unlike in previous research on surface-plasmon-enhanced LEDs, the metallic nanoparticles were consistently deposited over the surface area. However, according to microstructural observation, ITO layer mixed with Ag-based nanoparticles was distributed at a distance of approximately 150 nm from the interface of ITO/p-GaN. Device performance can be improved substantially by using the three-dimensional distribution of Ag-based nanoparticles in the transparent conductive layer, which scatters the propagating light randomly and is coupled between the localized surface plasmon and incident light internally trapped in the LED structure through total internal reflection.