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Your search keyword '"Horiguchi, Seiji"' showing total 40 results
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40 results on '"Horiguchi, Seiji"'

1. Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors

Author

Ono, Yukinori, Morizur, Jean-Francois, Nishiguchi, Katsuhiko, Takashina, Kei, Yamaguchi, Hiroshi, Hiratsuka, Kazuma, Horiguchi, Seiji, Inokawa, Hiroshi, and Takahashi, Yasuo

Subjects
Condensed Matter - Other Condensed Matter
Abstract

We investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor field-effect transistors at temperatures between 10 and 295 K. In a range of doping concentration between around 2.1 and 8.7 x 1017 cm-3, we find that a clear peak emerges in the conductance versus gate-voltage curves at low temperature. In addition, temperature dependence measurements reveal that the conductance obeys a variable-range-hopping law up to an unexpectedly high temperature of over 100 K. The symmetric dual-gate configuration of the silicon-on-insulator we use allows us to fully characterize the vertical-bias dependence of the conductance. Comparison to computer simulation of the phosphorus impurity band depth-profile reveals how the spatial variation of the impurity-band energy determines the hopping conduction in transistor structures. We conclude that the emergence of the conductance peak and the high-temperature variable-range hopping originate from the band bending and its change by the gate bias. Moreover, the peak structure is found to be strongly related to the density of states (DOS) of the phosphorus impurity band, suggesting the possibility of performing a novel spectroscopy for the DOS of phosphorus, the dopant of paramount importance in Si technology, through transport experiments., Comment: 9 figures

Published
2006
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3. Ultimately thin double-gate SOI MOSFETs

Author

Ernst, Thomas, Cristoloveanu, Sorin, Ghibaudo, Gerard, Ouisse, Thierry, Horiguchi, Seiji, Ono, Yukinori, Yasuao, Takahashi, and Murase, Katsumi

Subjects
Silicon-on-isolator -- Research, Thin films -- Research, Dielectric films -- Research, Metal oxide semiconductor field effect transistors -- Research, Business, Electronics, Electronics and electrical industries
Abstract

The feasibility and operation of ultimately thin double-gate SOI MOSFETs is described and discussed.

Published
2003

5. Physical origin and characteristics of gate capacitance in silicon metal-oxide-semiconductor field-effect transistors

Author

Nakajima, Yasuyuki, Horiguchi, Seiji, Shoji, Masanari, and Omura, Yasuhisa

Subjects
Silicon-on-isolator -- Research, Metal oxide semiconductor field effect transistors -- Research, Physics
Abstract

A theoretical model of total gate capacitance C(sub G) that is applicable to both bulk an silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) is presented. The model is compared to the conventional model of C(sub G). Results indicate that a small increase in the subband energy level with increasing electron density results in large gate capacitance and high performance of the SOI MOSFETS at 300 K.

Published
1998

6. Phonon-limited inversion layer electron mobility in extremely thin Si layer of silicon-on-insulator metal-oxide-semiconductor field-effect transistor

Author

Shoji, Masanari and Horiguchi, Seiji

Subjects
Metal oxide semiconductor field effect transistors -- Research, Electron mobility -- Research, Physics
Abstract

The phonon-limited electron mobility in extremely thin Si layers of silicon-on-insulator metal-oxide-semiconductor field-effect transistor increases to a maximum at t(sub Si) of ~3 nm and declines monotonically with the reduction of t(sub Si). The increase in mobility is the result of an increase of the fraction of electrons in the lowest energy subband with a higher mobility than other subbands. The decrease in mobility is traced to the enhancement of phonon scattering rates due to a reduction of the spatial widths of the subbands.

Published
1997

7. Electron tunneling from the edge of thin single-crystal Si layers through SiO2 film

Author

Ono, Yukinori, Takahashi, Yasuo, Horiguchi, Seiji, Murase, Katsumi, and Tabe, Michiharu

Subjects
Tunneling (Physics) -- Research, Silicon-on-isolator -- Research, Semiconductor films -- Research, Silicon -- Electric properties, Physics
Abstract

Silicon/edge-oxide/polysilicon tunnel devices using a very thin silicon-on-insulator film as a cathode were fabricated to study the electron tunneling properties of nanometer-scale silicon. To this end, the tunneling current from the edge of the 5-nm-thick SIMOX-silicon layers was measured in terms of the polysilicon front gate bias. The results indicated that a positive bias at the front induces the current-gate voltages characteristics to exhibit a steplike behavior.

Published
1996

11. Electronic structures and phonon-limited electron mobility of double-gate silicon-on-insulator Si...

Author

Shoji, Masanari and Horiguchi, Seiji

Subjects
*PHONON spectra, *ELECTRON mobility, *SILICON-on-insulator technology, *ELECTRIC properties of silicon
Abstract

Studies the electronic structures and phonon-limited electron mobility of inversion layers of double-gate silicon-on-insulator (SOI) silicon structures. Electronic structures for double-gate SOI inversion layers; Phonon-limited electron mobility for double-gate SOI silicon inversion layers.

Published
1999
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13. Interface-trap generation modeling of Fowler–Nordheim tunnel injection into ultrathin gate oxide.

Author

Horiguchi, Seiji, Kobayashi, Toshio, and Saito, Kazuyuki

Subjects
*OXIDES, *INTERFACES (Physical sciences)
Abstract

Presents a study that investigated the mechanisms for interface-trap generation during Fowler-Nordheim tunnel injection into gate oxide. Methodology; Analysis of the interface-trap generation for positive and negative bias injections; Development of a model for interface-trap generation.

Published
1985
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14. Phonon-limited inversion layer electron mobility in extremely thin Si layer of silicon-on-...

Author

Masanari and Horiguchi, Seiji

Subjects
*PHYSICS experiments
Abstract

Presents information on a study using a relaxation time approximation and a one-dimensional self-consistent calculation to investigate phono-limited inversion layer electron mobility in extremely thin (100) Si layers of silicon-on-insulator field-effect transistors at 300 K. How the one-dimensional calculations of the electronic structures in inversion regions were performed; Further details of the study; Results and conclusions of the study.

Published
1997
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40. Fabrication of SiO2/Si/SiO2Double Barrier Diodes using Two-Dimensional Si Structures

Author

Namatsu, Hideo, Horiguchi, Seiji, Takahashi, Yasuo, Masao Nagase, Masao Nagase, and Kenji Kurihara, Kenji Kurihara

Abstract

In this article, we demonstrate a technique for fabricating SiO2/two-dimensional (2D)-Si/SiO2double barrier diodes and discuss their characteristics. Vertical 2D-Si with {111} side planes is formed by orientation-dependent etching of {110} Si using aqueous alkaline solution. The linewidth of the 2D-Si is reduced to nanometer order with NH4F/H2O2solution. This solution also removes the residue generated on Si planes etched by aqueous alkaline solution. Using a skillful arrangement of dummy patterns and an etchback technique, poly-Si electrodes are successfully formed without any lithographic alignments. A SiO2/2D-Si/SiO2diode fabricated by this process shows resonant characteristics that are in agreement with the calculated values.

Published
1997
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