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178 results on '"Hopf, T."'

1. Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails

Author

Veloso, A., primary, Jourdain, A., additional, Radisic, D., additional, Chen, R., additional, Arutchelvan, G., additional, O'Sullivan, B., additional, Arimura, H., additional, Stucchi, M., additional, De Keersgieter, A., additional, Hosseini, M., additional, Hopf, T., additional, D'have, K., additional, Wang, S., additional, Dupuy, E., additional, Mannaert, G., additional, Vandersmissen, K., additional, Iacovo, S., additional, Marien, P., additional, Choudhury, S., additional, Schleicher, F., additional, Sebaai, F., additional, Oniki, Y., additional, Zhou, X., additional, Gupta, A., additional, Schram, T., additional, Briggs, B., additional, Lorant, C., additional, Rosseel, E., additional, Hikavyy, A., additional, Loo, R., additional, Geypen, J., additional, Batuk, D., additional, Martinez, G. T., additional, Soulie, J. P., additional, Devriendt, K., additional, Chan, B. T., additional, Demuynck, S., additional, Hiblot, G., additional, Van der Plas, G., additional, Ryckaert, J., additional, Beyer, G., additional, Litta, E. Dentoni, additional, Beyne, E., additional, and Horiguchi, N., additional

Published
2022
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9. Low-noise detection system for the counted implantation of single ions in silicon

Author

Hopf, T., Yang, C., Hearne, S.M., Jamieson, D.N., Gauja, E., Andresen, S.E., and Dzurak, A.S.

Subjects
Heavy ions -- Properties, Ion implantation -- Methods, Radiation warning systems -- Design and construction, Business, Electronics, Electronics and electrical industries
Abstract

A unique detection system has been developed which allows for the counted implantation of individual low-energy heavy ions into silicon. This system can ensure the placement of individual ions at precise locations within a wafer using an EBL-machined resist mask, and utilizes the generation of ionization within the silicon substrate to allow for the reliable detection of [sup.31][P.sup.+] implants down to 14 keV. Due to the necessity for low-noise operation, it is important that both the capacitance of the detectors and their leakage current be reduced as much as possible. To this end, we have now created a detector architecture with a measured capacitance of 0.6 pF and sub-pA leakage current at liquid nitrogen temperature, which has allowed us to achieve a resolution of 410 eV (44.2 electrons RMS) when coupled to low-noise signal-processing electronics and operated at 90 K. Index Terms--Ion beam applications, ion implantation, quantum computation, silicon radiation detectors.

Published
2008

12. First Monolithic Integration of 3D Complementary FET (CFET) on 300mm Wafers

Author

Subramanian, S., primary, Hosseini, M., additional, Chiarella, T., additional, Sarkar, S., additional, Schuddinck, P., additional, Chan, B. T., additional, Radisic, D., additional, Mannaert, G., additional, Hikavyy, A., additional, Rosseel, E., additional, Sebaai, F., additional, Peter, A., additional, Hopf, T., additional, Morin, P., additional, Wang, S., additional, Devriendt, K., additional, Batuk, D., additional, Martinez, G. T., additional, Veloso, A., additional, Litta, E. Dentoni, additional, Baudot, S., additional, Siew, Y. K., additional, Zhou, X., additional, Briggs, B., additional, Capogreco, E., additional, Hung, J., additional, Koret, R., additional, Spessot, A., additional, Ryckaert, J., additional, Demuynck, S., additional, Horiguchi, N., additional, and Boemmels, J., additional

Published
2020
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13. Buried Power Rail Integration with Si FinFETs for CMOS Scaling beyond the 5 nm Node

Author

Gupta, A., primary, Mertens, H., additional, Tao, Z., additional, Demuynck, S., additional, Bommels, J., additional, Arutchelvan, G., additional, Devriendt, K., additional, Pedreira, O. Varela, additional, Ritzenthaler, R., additional, Wang, S., additional, Radisic, D., additional, Kenis, K., additional, Teugels, L., additional, Sebaai, F., additional, Lorant, C., additional, Jourdan, N., additional, Chan, B. T., additional, Zahedmanesh, H., additional, Subramanian, S., additional, Schleicher, F., additional, Hopf, T., additional, Peter, A., additional, Rassoul, N., additional, Debruyn, H., additional, Demonie, I., additional, Siew, Y., additional, Chiarella, T., additional, Briggs, B., additional, Zhou, D., additional, Rosseel, E., additional, De Keersgieter, A., additional, Capogreco, E., additional, Litta, E. Dentoni, additional, Boccardi, G., additional, Baudot, S., additional, Mannaert, G., additional, Bontemps, N., additional, Sepulveda, A., additional, Mertens, S., additional, Kim, M. S., additional, Dupuy, E., additional, Vandersmissen, K., additional, Paolillo, S., additional, Yakimets, D., additional, Chehab, B., additional, Favia, P., additional, Drijbooms, C., additional, Cousserier, J., additional, Jaysankar, M., additional, Lazzarino, F., additional, Morin, P., additional, Sanchez, E., additional, Mitard, J., additional, Wilson, C., additional, Holsteyns, F., additional, Tokei, Z., additional, and Horiguchi, N., additional

Published
2020
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17. Quantification and discovery of sequence determinants of protein-per-mRNA amount in 29 human tissues

Author

Eraslan, B., Wang, D., Gusic, M., Prokisch, H., Hallström, B.M., Uhlén, M., Asplund, A., Pontén, F., Wieland, T., Hopf, T., Hahne, H., Kuster, B., and Gagneur, J.

Subjects
Proteomics, Proteome, codon usage, Genome, Human, Sequence Analysis, RNA, Biochemistry and Molecular Biology, Proteins, translational control, Articles, Methods & Resources, Codon Usage, Mrna Sequence Motifs, Transcriptomics, Translational Control, RNA Biology, Mass Spectrometry, Article, transcriptomics, proteomics, Gene Expression Regulation, mRNA sequence motifs, Genome-Scale & Integrative Biology, Humans, Tissue Distribution, RNA, Messenger, Transcriptome, Biokemi och molekylärbiologi
Abstract

Despite their importance in determining protein abundance, a comprehensive catalogue of sequence features controlling protein‐to‐mRNA (PTR) ratios and a quantification of their effects are still lacking. Here, we quantified PTR ratios for 11,575 proteins across 29 human tissues using matched transcriptomes and proteomes. We estimated by regression the contribution of known sequence determinants of protein synthesis and degradation in addition to 45 mRNA and 3 protein sequence motifs that we found by association testing. While PTR ratios span more than 2 orders of magnitude, our integrative model predicts PTR ratios at a median precision of 3.2‐fold. A reporter assay provided functional support for two novel UTR motifs, and an immobilized mRNA affinity competition‐binding assay identified motif‐specific bound proteins for one motif. Moreover, our integrative model led to a new metric of codon optimality that captures the effects of codon frequency on protein synthesis and degradation. Altogether, this study shows that a large fraction of PTR ratio variation in human tissues can be predicted from sequence, and it identifies many new candidate post‐transcriptional regulatory elements.

Published
2019

23. Forum: Experimentelle Unfallchirurgie I

Author

Gotzen, L., primary, Hansis, M., additional, Marzi, I., additional, Rose, S., additional, Pizanis, A., additional, Mutschler, W., additional, Kossman, T., additional, Hans, V., additional, Stocker, R., additional, Csuka, E., additional, Morganti-Kossmann, M., additional, Trentz, O., additional, Eickhoff, U., additional, Brand, J., additional, Senkal, M., additional, Schäfer, B., additional, Kramer, M., additional, Aufmolk, M., additional, Fischer, R., additional, Kleinschmidt, Ch., additional, Obertacke, U., additional, Schmit-Neuerburg, K. P., additional, Hofer, H. P., additional, Bratschitsch, G., additional, Kukovetz, E., additional, Egger, G., additional, Schweighofer, F., additional, Schaur, R. J., additional, Hebebrand, D., additional, Vogt, P. M., additional, Hussmann, J., additional, Steinau, H. U., additional, Keel, M., additional, Schregenberger, N., additional, Steckholzer, U., additional, Ungethüm, U., additional, Ertel, W., additional, Bauer, C., additional, Welsch, M., additional, Larsen, R., additional, Willy, C., additional, Kaffenberger, W., additional, Voss, S., additional, Minholz, R., additional, Sterk, J., additional, Gerngroß, H., additional, Grotz, M., additional, Regel, G., additional, Tscherne, H., additional, Lewandrowski, K. U., additional, Tomford, W. W., additional, Ekkernkamp, A., additional, Muhr, G., additional, Dresing, K., additional, Stürmer, K. M., additional, Michael, K., additional, Busse, U., additional, Folwaczny, E., additional, Rack, T., additional, Kauer, F., additional, Schüller, M., additional, Ondracek, G., additional, Clasbrummel, B., additional, Goodship, A. E., additional, Czerny, F., additional, Rueger, J. M., additional, Linhart, W. A., additional, Pannike, A., additional, Hohlbein, O., additional, Neidlinger-Wilke, C., additional, Suger, G., additional, Kinzl, L., additional, Claes, L., additional, Voigt, C., additional, Müller-Mai, C., additional, Herbst, H., additional, Rahmanzadeh, R., additional, Gross, U. M., additional, Buchholz, J., additional, Josten, C., additional, Neugebauer, E., additional, Lubnow, M., additional, Stubb, S. I., additional, Gross, U., additional, Schildhauer, T. A., additional, Bostrom, M. P., additional, Lane, J. M., additional, Rosen, V. M., additional, Günther, K. P., additional, Scharf, H.-P., additional, Persch, H.-J., additional, Puhl, W., additional, Erlacher, L., additional, Maier, R., additional, Woloszcuk, W., additional, Graninger, W., additional, Vécsei, V., additional, Scherer, M. A., additional, Metak, G., additional, Stephan, C., additional, Blümel, G., additional, Heitland, A., additional, Michalowski, K. A., additional, Rupp, S., additional, Tempelhof, S., additional, Hopf, T., additional, Milachowski, K. A., additional, Lob, G., additional, Mayer, E., additional, Mittelmeier, T., additional, Masmoudi, M., additional, Petermann, J., additional, Walters, E. M., additional, Müller, Th., additional, Kwasny, O., additional, Schabus, R., additional, Reihsner, R., additional, Plenk, H., additional, Mallinger, R., additional, Nerlich, M., additional, Wenda, K., additional, Kröpf, A., additional, Berger, U., additional, Naglik, H., additional, Primavesi, Ch., additional, Hertz, H., additional, Schlag, G., additional, Lederer, M., additional, Tepic, S., additional, Perren, S. M., additional, Ostermann, P. A. W., additional, Pommer, A., additional, Arens, St., additional, Schlegel, U., additional, Printzen, G., additional, Ziegler, W., additional, Melcher, G., additional, Metzdorf, A., additional, Perren, S., additional, Künneke, M., additional, Feld, C., additional, Goricke, H., additional, Lorenz, W., additional, Schrats, H.-E., additional, Schuppan, O., additional, Kück, K., additional, Decker, B., additional, Bosch, U., additional, Friedel, W., additional, Fitz, C., additional, Augat, P., additional, Margevicius, K., additional, Haas, N., additional, Bühren, V., additional, Winker, H., additional, Olinger, A., additional, Schmitt, E., additional, Hildebrandt, U., additional, Menger, M., additional, Maurer, J. W., additional, Döring, D., additional, Görblich, S., additional, Köhle, N., additional, Kutschker, Ch., additional, Kothe, R., additional, Panjabi, M., additional, Westermann, K., additional, Zink, P. M., additional, Samii, M., additional, Lüdemann, W., additional, Rathjen, C., additional, Windhagen, H., additional, Hipp, J., additional, Raschke, M., additional, Hayes, C., additional, Bastian, L., additional, Blauth, M., additional, Maack, S., additional, Baumgaertel, F., additional, Wilke, M., additional, Russe, O., additional, Josten, Ch., additional, Wiedemann, M., additional, Rüter, A., additional, John, T., additional, Scheller, E., additional, Pfander, D., additional, Shakibaei, M., additional, Paul, D., additional, Bouillon, B., additional, Wippermann, B., additional, Zwipp, H., additional, Hanselmann, R., additional, Seybold, U., additional, Oberringer, M., additional, Vollmar, B., additional, Koschnik, M., additional, Erdmann, D., additional, Kucan, J. O., additional, Russel, R. C., additional, Fermerey, R. W., additional, Lobenhoffer, P., additional, Fu, F. H., additional, Morganti-Kossmann, M. C., additional, Kossmann, T., additional, Jones, J., additional, Barnum, S., additional, Fritz, Th., additional, Klavora, R., additional, Böhm, H. J., additional, Hierholzer, G., additional, Knaepler, H., additional, v. Garrel, T., additional, Gürtler, L., additional, Böllinger, C., additional, Andreas, M., additional, and Neumann, C., additional

Published
1996
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24. Scaled, Novel Effective Workfunction Metal Gate Stacks for Advanced Low-VT, Gate-All-Around Vertically Stacked Nanosheet FETs with Reduced Vertical Distance between Sheets

Author

Veloso, A., primary, Simoen, E., additional, Oliveira, A., additional, Chasin, A., additional, Chen, S.-C., additional, Lin, Y., additional, Miyashita, T., additional, Kim, M., additional, Jang, D., additional, Ritzenthaler, R., additional, Zhou, X., additional, Mertens, H., additional, Pena, V., additional, Santoro, G., additional, Kenis, K., additional, Sebaai, F., additional, Mannaert, G., additional, Devriendt, K., additional, Hopf, T., additional, Versluijs, J.J., additional, Richard, O., additional, Machillot, J., additional, Yoshida, N., additional, and Horiguchi, N., additional

Published
2019
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26. Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature.

Author

Hopf, T., Vassilevski, K. V., Escobedo-Cousin, E., King, P. J., Wright, N. G., O'Neill, A. G., Horsfall, A. B., Goss, J. P., Wells, G. H., and Hunt, M. R. C.

Subjects
*FIELD-effect transistors, *GRAPHENE, *SILICON carbide, *RAMAN spectroscopy, *ATOMIC force microscopy
Abstract

Top-gated graphene field-effect transistors (GFETs) have been fabricated using bilayer epitaxial graphene grown on the Si-face of 4H-SiC substrates by thermal decomposition of silicon carbide in high vacuum. Graphene films were characterized by Raman spectroscopy, Atomic Force Microscopy, Scanning Tunnelling Microscopy, and Hall measurements to estimate graphene thickness, morphology, and charge transport properties. A 27 nm thick Al2O3 gate dielectric was grown by atomic layer deposition with an e-beam evaporated Al seed layer. Electrical characterization of the GFETs has been performed at operating temperatures up to 100°C limited by deterioration of the gate dielectric performance at higher temperatures. Devices displayed stable operation with the gate oxide dielectric strength exceeding 4.5 MV/cm at 100°C. Significant shifting of the charge neutrality point and an increase of the peak transconductance were observed in the GFETs as the operating temperature was elevated from room temperature to 100°C. [ABSTRACT FROM AUTHOR]

Published
2014
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30. Spin-on metal oxide materials for N7 and beyond patterning applications

Author

Mannaert, G., additional, Altamirano-Sanchez, E., additional, Hopf, T., additional, Sebaai, F., additional, Lorant, C., additional, Petermann, C., additional, Hong, S.-E., additional, Mullen, S., additional, Wolfer, E., additional, Mckenzie, D., additional, Yao, H., additional, Rahman, D., additional, Cho, J.-Y., additional, Padmanaban, M., additional, and Piumi, D., additional

Published
2017
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31. Improvement of the CMOS characteristics of bulk Si FinFETs by high temperature ion implantation

Author

Kikuchi, Y., primary, Hopf, T., additional, Mannaert, G., additional, Tao, Z., additional, Waite, A., additional, Cournoyer, J., additional, Borniquel, J., additional, Schreutelkamp, R., additional, Ritzenthaler, R., additional, Kim, M. S., additional, Kubicek, S., additional, Chew, S. A., additional, Devriendt, K., additional, Schram, T., additional, Demuynck, S., additional, Variam, N., additional, Horiguchi, N., additional, and Mocuta, D., additional

Published
2016
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32. Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

Author

Mertens, H., primary, Ritzenthaler, R., additional, Chasin, A., additional, Schram, T., additional, Kunnen, E., additional, Hikavyy, A., additional, Ragnarsson, L.-A., additional, Dekkers, H., additional, Hopf, T., additional, Wostyn, K., additional, Devriendt, K., additional, Chew, S. A., additional, Kim, M. S., additional, Kikuchi, Y., additional, Rosseel, E., additional, Mannaert, G., additional, Kubicek, S., additional, Demuynck, S., additional, Dangol, A., additional, Bosman, N., additional, Geypen, J., additional, Carolan, P., additional, Bender, H., additional, Barla, K., additional, Horiguchi, N., additional, and Mocuta, D., additional

Published
2016
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34. Formation of nanoclusters with varying Pb/Se concentration and distribution after sequential Pb+ and Se+ ion implantation into SiO2

Author

Markwitz, A., Carder, D. A., Hopf, T., Kennedy, J., Kuei, C. T., Mücklich, A., and Osipowicz, T.

Abstract

First results obtained from electron beam annealed sequentially implanted Pb+ (29 keV) and Se + (25 keV) ions into a SiO2 matrix are presented. Key results from Rutherford backscattering spectrometry and transmission electron microscopy investigations are: (1) Pb and Se atoms are found to bond in the SiO2 matrix during implantation, forming into nanoclusters even prior to the annealing step, (2) Pb and Se atoms are both present in the sample after annealing at high temperature (T = 760 °C, t = 45 min) and form into PbSe nanoclusters of varying sizes within the implanted region, and (3) the broader concentration profile of implanted Se creates a number of secondary features throughout the SiO2 film, including voids and hollow shell Se nanoclusters. A sequential ion implantation approach has several advantages: selected areas of nanocrystals can be formed for integrated circuits, the technique is compatible with present silicon processing technology, and the nanocrystals are embedded in an inert matrix - making them highly durable. In addition, a higher concentration of nanocrystals is possible than with conventional glass melt techniques.

Published
2012

35. Das Blaue Band : Naturschutz als Chance für die Wasserstraßenreform

Author

Mehl, D., Eberts, J., Scholz, Mathias ; orcid:0000-0002-8463-9500, Kasperidus, Hans Dieter, Hopf, T., Ossenkop, M., Pieper, B., Mehl, D., Eberts, J., Scholz, Mathias ; orcid:0000-0002-8463-9500, Kasperidus, Hans Dieter, Hopf, T., Ossenkop, M., and Pieper, B.

Published
2014

36. An update on MoonLITE

Author

Gowen, R., Smith, A., Winter, B., Theobald, C., Rees, K., Ball, A. J., Hagermann, A., Sheridan, S., Brown, P., Oddy, T., Dougherty, M., Church, P., Gao, Y., Jones, A., Katherine Joy, Crawford, I., Pike, T., Kumar, S., Hopf, T., Wells, N., Green, K., and Ryden, K.

Abstract

MoonLITE is a proposed, UK led lunar science mission involving 4 scientific penetrators that will make in situ measurements at widely separated locations on the Moon. MoonLITE will create the first global lunar network with nodes near and far-side, and in permanently shaded crater(s). With such a network MoonLITE will be able to determine much about the interior of the Moon, including characterisation of its core. Penetrator(s) at the poles will seek and characterise frozen volatiles, possibly of cometary origin and of great importance both to human exploration and to astrobiology. MoonLITE penetrators will reach the Moon at ~300 m/s and so must be able to stand the forces associated with this impact. As part of a programme aimed to establish reliable penetrator technologies the first full-scale impact trials have been conducted and are described here.

Published
2008

40. Controlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ions

Author

Jamieson, DN, Yang, C, Hopf, T, Hearne, SM, Pakes, CI, Prawer, S, Mitic, M, Gauja, E, Andresen, SE, Hudson, FE, Dzurak, AS, Clark, RG, Jamieson, DN, Yang, C, Hopf, T, Hearne, SM, Pakes, CI, Prawer, S, Mitic, M, Gauja, E, Andresen, SE, Hudson, FE, Dzurak, AS, and Clark, RG

Abstract

We demonstrate a method for the controlled implantation of single ions into a silicon substrate with energy of sub-20-keV. The method is based on the collection of electron-hole pairs generated in the substrate by the impact of a single ion. We have used the method to implant single 14-keV P31 ions through nanoscale masks into silicon as a route to the fabrication of devices based on single donors in silicon.

Published
2005

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