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We developed an LSDC (Load Shift and Load Distribution Control) technology in order to improve coil quality and productivity by reducing tension fluctuation especially for the tail of the strip in the down coiler in hot strip mills. To adapt the new controller, the torque and speed distribution between the zero pinch roll, pinch roll, and mandrel are needed. The proposed controller is a combination of an LSC to share the tension between the mill stand and the mandrel, and an LDC to shift the torque load from the zero pinch roll to the pinch roll. From the simulation, the proposed controller is verified under the torque disturbance. Using a field test, the torque deviation decreased by nearly 50% through utilization of the LSDC control.

In this paper, we suggest a dimensional controller to produce a different thickness strip without adding production facilities at the same steel. We describe the model for the non-linear thickness and speed setup, and drive a variation of the speed and thickness with Talyor expansion. The control algorithm is composed of 8 steps and the transient condition is added in order to maintain a mass flow between stands. A simulator is developed in order to verify the algorithm, and includes a non-linear rolling model, the tension model, AGC model, the disturbance model, and so on. From the simulation results by disturbances, we show that the thickness, tension and looper angle are converged to the set condition when we change the rolling conditions.

In this paper, we propose an LTBC (Low Tension and Load Balance Control) scheme to improve a coiling shape control by reduction the tension fluctuation by the torque disturbance in the down coiler process of hot strip mills. The proposed controller is a combination of an LTC to control the overload at load-on in the mandrel and an LBC to regulate the load balance of the upper and bottom pinch roll. A tension calculation model is suggested with the concept of the tension deviation. The effectiveness of the proposed control scheme is verified from simulation under a disturbance of the pinch roll torque. Using a field test, we show that the performance of the shape and tension control is improved by the LTBC control.

This paper describes the synthesis of a robust and non-fragile H∞ observer-based filter design for a class of parameter uncertain system with polytopic uncertainties, disturbances, and gain variations. We present the sufficient condition for filter existence and the method for designing a robust and non-fragile H∞ filter by using LMIs (Linear Matrix Inequalities) technique. Because the obtained sufficient condition can be represented as PLMIs (Parameterized Linear Matrix Inequalities), which can generate infinite LMIs, we use the relaxation technique to find finite solutions for a robust and non-fragile H∞ filter. We show that the proposed filter can minimize the estimation error in terms of parameter uncertainties, filter-fragility, and disturbances.

In this paper, a motion control system based on 2-axis gimbal system is designed and implemented to drive a high speed and precision. The proposed system consists of the RS-422 interface, 2-axis gimbal platform, SCU (servo control unit) integrated with a high speed DSP chipset, SAU (servo amplifier unit), potentiometer sensor unit, and resolver sensor unit. The SCU using the DSP firmware is designed to get a fast response without an overshoot with step input and a RMS error of low probability with ramp input. The SAU using a voltage control is designed to resolve the zero-crossing distortion for precise motion. To verify the performance and stability of the implemented system, experiments are performed through a measurement of the time and frequency domain response in a laboratory environment by using a PXI (PCI extentions for instrumentation).

To reduce the personnel and material loss caused by fire, we propose the automatic fire extinguishing system based on the ignition point tracking using the flame detecter. This automatic fire extinguishing system is composed of the flame detecting system and the fire extinguishing system based on the water cannon. We study the method for the ignition point tracking and the automatic fire extinguishing using the water cannon and the flame detecter. The flame detecting system for the early fire detection and the ignition point tracking has to be satisfied the requirement of the detecting range and the flame detection time. So we study the signal process algorithm for an improvement of the flame detecting system.

This paper describes the synthesis of a robust and nonfragileH∞Kalman-type filter design for a class of time-delay systems with polytopic uncertainties, filter-gain variations, and disturbances. We present the sufficient condition for filter existence and the method for designing a robust nonfragileH∞filter by using LMIs (Linear Matrix Inequalities) technique. Because the obtained sufficient condition can be represented as PLMIs (Parameterized Linear Matrix Inequalities), which can generate infinite LMIs, we use a relaxation technique to find finite solutions for a robust nonfragileH∞filter. We show that the proposed filter can minimize estimation error in terms of parameter uncertainties, filter-fragility, and disturbances.

In this paper, we describe the synthesis of robust and non-fragile Kalman filter design for a class of uncertain linear system with polytopic uncertainties and filter gain variations. The sufficient condition of filter existence, the design method of robust non-fragile filter, and the measure of non-fragility in filter are presented via LMIs(Linear Matrix Inequality) technique. And the obtained sufficient condition can be represented as PLMIs(Parameterized Linear Matrix Inequalities) that is, coefficients of LMIs are functions of a parameter confined to a compact set. Since PLMIs generate infinite LMIs, we use relaxation technique, find a finite solution for robust non-fragile filter, and show that the resulting filter guarantees the asymptotic stability with parameter uncertainties and filter fragility. Finally, a numerical example is shown to validate the proposed design method.

In this paper, a real-time monitoring system based on WSN is designed and implemented to monitor livestock growth environment information which includes the temperature, humidity and harmful gases such as and so on. The proposed system consists of the wireless sensor nodes, the monitoring management device, the management server and the user interface program based on PC/Smart phone. To verify the performance of the implemented system, gas measurement experiments are performed in laboratory environment by using the designed wireless sensor nodes. And it is able to estimate the concentration of gases. The implemented system is able to monitor the proposed environmental element information through the developed GUI.

In this paper, we describe the synthesis of robust and non-fragile Kalman filter design for a class of uncertain linear system with polytopic uncertainties and filter gain variations. The sufficient condition of filter existence, the design method of robust non-fragile filter, and the measure of non-fragility in filter are presented via LMIs(Linear Matrix Inequality) technique. And the obtained sufficient condition can be represented as PLMIs(parameterized linear matrix inequalities) that is, coefficients of LMIs are functions of a parameter confined to a compact set. Since PLMIs generate infinite LMIs, we use relaxation technique, find the finite solution for robust non-fragile filter, and show that the resulting filter guarantees the asymptotic stability with parameter uncertainties and filter fragility. Finally, a numerical example will be shown.

Harmful gases which are generated from various rout at growth environment of livestock ban have a direct and indirect bad influence to the livestock and farmers, and also step-up breeding density and long-term exposure to the sealed environment of winter can be fatal. In this paper, we propose a gas measurement system for monitoring gases of ammonia, hydrogen sulfide, volatile organic compounds, etc. which arise from the muck. The measurement system consist of both wireless gas sensor node and gas recognition software using a Fuzzy Min-Max neural network. To evaluate the performance of suggested system, gas measurement experiments are performed in laboratory environment by using the designed wireless gas sensor node. And we show the performance through classification test for the target gases by the designed gas recognition software.

Device performance and reliability characteristics of various types of Ru–Al-based metal gates on HfSiO gate dielectrics were investigated for p-type metal-oxide-semiconductor field effect transistor (pMOSFET) applications. Using the high work function of Ru and a dipole formed by Al atoms in a gate dielectric, the threshold voltage of the pMOSFET could be controlled successfully. However, the excessive diffusion of Al atoms generated more interface states and bulk trapping in the high-k dielectric layer and degraded the device performances and reliability characteristics. It was also found that the carefully tailored sequence of deposition and composition of Ru and Al metals can be used to prevent the excessive diffusion of Al atoms.

A review of literature combined with recent experimental results addressing the intrinsic and extrinsic factors controlling the effective work function (EWF) of metal gate electrodes on Hf-based high-K dielectrics is discussed. Through a systematic study including accurate extraction of EWF, our observations suggest, unlike popularly perceived, intrinsic E"f-pinning does not limit the EWF tuning on high-K. Also, a critical issue challenging the maintenance of high EWF metals at low effective oxide thicknesses (EOT), due to a new phenomena described as the ''V"f"b roll-off'', is reported for the first time.

An analog CMOS vision chip for edge detection with power consumption below 20 mW was designed by adopting electronic switches. An electronic switch separates the edge detection circuit into two parts: one is a logarithmic compression photocircuit, and the other is a signal processing circuit for edge detection. The electronic switch controls the connection between the two circuits. When the electronic switch is off, it can intercept the current flow through the signal processing circuit and restrict the magnitude of the current flow below several hundred nA. The estimated power consumption of the chip, with 128 × 128 pixels, was below 20 mW. The vision chip was designed using 0.25 µm 1-poly 5-metal standard full custom CMOS process technology.

HfO2 gate dielectric thin-films were deposited on Si wafers using an atomic-layer deposition (ALD) technique with HfCl4 and either H2O or O3 as the precursor and oxidant, respectively. Although the ALD reactions using either H2O or O3 were successfully confirmed at a deposition temperature of 300 °C, the structural and electrical properties of the HfO2 films grown using the two oxidants were quite different. The stronger oxidation power of the O3 compared to H2O increased the oxygen concentration in the HfO2 film and the rate of interfacial SiO2 formation even at the as-deposited state. Because of the larger oxygen concentration, the decrease in the capacitance density of the film grown with O3 after rapid thermal annealing at 750 °C under N2 atmosphere was slightly larger than that of the HfO2 film grown with H2O. Apart from this weakness, all the other electrical properties, including the fixed charge density, the interface trap density, the leakage current density and the hysteresis in the capacitance–...

HfO2/Al2O3 gate dielectric thin film stacks were deposited on Si wafers using the atomic layer deposition technique. A 3.3-nm-thick Al2O3 interlayer was grown at 400 °C using Al(CH3)3 and O3, and 2.5–3.5-nm-thick HfO2 films were grown at either 300 or 400 °C using HfCl4 and H2O. Thermal annealing of the dielectric film stack at temperatures ranging from 400 to 1000 °C under pure N2 atmosphere resulted in variation of the equivalent oxide thicknesses. The equivalent oxide thickness of the dielectric film stack showed a minimum after annealing at 650 °C irrespective of the HfO2 film growth temperature. High temperature (>800 °C) annealing induced the formation of SiO2 and intermixing between the HfO2 and Al2O3 layers, which resulted in an increase in the equivalent oxide thickness of the film stack. The structural changes in the stacked films as a function of the annealing temperature were compared with those of HfO2 and Al2O3 single layers. The film stack showed minimal hysteresis (

HfO2/Al2O3 gate dielectric thin-film stacks were deposited on Si wafers using an atomic-layer-deposition technique. A 2.3-nm-thick Al2O3 interlayer was grown at 450 °C using Al(CH3)3 and O3, and (4–5)-nm-thick HfO2 films were grown at 400 °C using HfCl4 and H2O as precursors. Because the Al2O3 interlayer was not an effective Si-diffusion barrier layer on its own, the Al2O3 interlayer was plasma treated under an NH3 atmosphere at 790 °C for 40 s. The plasma treatment increased the Al2O3 interlayer thickness by approximately 1 nm and decreased the overall capacitance density of the film stack. However, the thermal stability of the capacitance density was greatly improved as a result of the treatment resulting in a similar capacitance density after postannealing at 800 °C in a N2 atmosphere to that observed in nontreated samples after similar annealing conditions. The signs and amount of the fixed charges of the Al2O3/Si and HfO2/Al2O3 interfaces greatly depend on the nitridation of the Al2O3 layer. Furtherm...

This paper presents a method for designing fuzzy controllers of nonlinear systems with time varying delay. Takagi-Sugeno fuzzy model is employed to represent nonlinear systems with time varying delay. Using a single quadratic Lyapunov function, the globally exponential stability and performance problem are discussed. A sufficient condition for the existence of fuzzy controllers is then presented in terms of linear matrix inequalities(LMls). The proposed fuzzy controllers minimizes the upper bound on the linear quadratic performance measure.

In this Paper, we present a method for designing fuzzy controllers of delayed nonlinear systems with saturating input. Takagi-Sugeno fuzzy model is employed to represent delayed nonlinear systems with saturating input. The fuzzy control systems utilize the concept of the so-called parallel distributed compensation(PDC). Using a single quadratic Lyapunov function, the globally exponential stability and performance problem are discussed. And a sufficient condition for the existence of fuzzy controllers is given in terms of linear matrix inequalities(LMIs). The designing fuzzy controllers minimize an upper bound on a linear quadratic performance measure. Finally, a design example of fuzzy controller for uncertain delayed nonlinear systems with saturating input.

This paper presents a method for designing robust fuzzy H∞ controllers which stabilize nonlinear systems and guarantee an induced L2 norm bound constraint on disturbance attenuation for all admissible uncertainties. Takagi and Sugeno fuzzy models with uncertainties are used as the model for the uncertain nonlinear systems. Fuzzy control systems utilize the concept of the so-called parallel distributed compensation (PDC). Using a single quadratic Lyapunov function, the stability with decay rate and disturbance attenuation for Takagi and Sugeno fuzzy model with parameter uncertainties are discussed. A sufficient condition for the presence of the robust fuzzy H∞ controllers is then presented in terms of linear matrix inequalities (LMIs). Finally, design examples of robust fuzzy H∞ controllers for uncertain nonlinear systems are presented.

This paper presents an output feedback robust H/sup /spl infin// control problem for a class of uncertain fuzzy dynamic systems with time-varying delayed state. The Takagi-Sugeno fuzzy model is employed to represent an uncertain nonlinear systems with time-varying delayed state. Using a single quadratic Lyapunov function, the globally exponential stability and disturbance attenuation of the closed-loop fuzzy control system are discussed. Sufficient conditions for the existence of robust H/sup /spl infin// controllers are given in terms of matrix inequalities. Constructive algorithm for design of robust H/sup /spl infin// controller is also developed. The resulting controller is nonlinear and automatically tuned based on fuzzy operation.

The influence of two-step deposition on the electrical properties of sputtered (Ba,Sr)TiO3 thin films was investigated. BST thin films with thickness 40 nm were deposited by a simple two-step radio frequency-magnetron sputtering technique, where the BST thin film consisted of a seed layer and a main layer. The dielectric constant was strongly dependent on the thickness of seed layer, but there was no dependence on deposition temperature of the seed layer. For a 2 nm seed layer, the dielectric constants were higher by about 29% than those of single-step BST thin films due to higher crystallinity and the leakage current was nearly the same as that of a single-step sample in bias voltage from −2 to 2.5 V. However, an improvement of the dielectric constant was not observed for samples having above 4 nm thick seed layers. A 40 nm thick BST film with 2 nm thick seed layer deposited by a two-step method exhibited a SiO2 equivalent thickness of 0.385 nm and a leakage current density of 2.74 × 10−8A/cm2at+1.5V after post-annealing under an atmosphere of flowing N2 for 30 min at 750°C.

This paper describes the synthesis of a robust and nonfragile H∞ Kalman-type filter design for a class of time-delay systems with polytopic uncertainties, filter-gain variations, and disturbances. We present the sufficient condition for filter existence and the method for designing a robust nonfragile H∞ filter by using LMIs (Linear Matrix Inequalities) technique. Because the obtained sufficient condition can be represented as PLMIs (Parameterized Linear Matrix Inequalities), which can generate infinite LMIs, we use a relaxation technique to find finite solutions for a robust nonfragile H∞ filter. We show that the proposed filter can minimize estimation error in terms of parameter uncertainties, filter-fragility, and disturbances.

The voltage-induced degradation in the threshold voltage of field-effect transistors using atomic layer deposited HfO2-gate dielectrics was studied. Si channel surfaces of some samples were in situ pretreated using O3 flow before HfO2 deposition, which formed a very thin SiO2 interfacial layer. This avoided a shift of the threshold voltage up to a stress time of 1000s under inversion condition at +3V gate voltage. The transistors without O3 pretreatment showed a serious change in the threshold voltage by electron trapping. A leakage current measurement under inversion condition showed that the leakage current was not the major factor that controlled the degradation. Instead, the interfacial traps resulting from the Si suboxide formation for the cases without O3 pretreatment appeared to constitute the major reason for the degradation.

The dielectric properties of HfO2 thin films, which were deposited on Si wafers by an atomic layer deposition (ALD) technique at a wafer temperature of 300 °C using a N-containing, tetrakis dimethylamido hafnium precursor (Hf[N(CH3)2]4), were highly improved by adopting O3 as the oxidant during the ALD instead of H2O. The films contained a much smaller carbon impurity concentration and were of more amorphous nature compared to the films grown using H2O as oxidant. Temperature-dependent leakage current analysis showed that the films grown using O3 as oxidant had a higher interfacial potential barrier for tunneling and the leakage current densities of the as-deposited film were three orders of magnitude smaller than that of the films grown using H2O. The dielectric constant of the HfO2 film was 24.4 and the leakage current density was 1.6×10−7A∕cm2 when the capacitance equivalent thickness was 1.49 nm.

HfO2 thin films were deposited on HF-dipped Si wafers at 300 °C using an atomic-layer-deposition technique with N-containing Hf[N(CH3)2]4 and H2O as the precursor and oxidant, respectively. A thin interfacial SiNx layer was spontaneously formed at the HfO2/Si interface during film growth. This interfacial SiNx layer prevented substrate Si diffusion into the HfO2 film. Therefore, the reduction in the capacitance density as a result of post-annealing at 800 °C was minimized. The leakage current density was also reduced due to the more amorphous-like structure of the film. Furthermore, the interfacial trap density (Dit) of

HfO2 thin films were deposited on SiNx-passivated Si wafers at 300 and 400 °C using an atomic-layer-deposition technique. The SiNx films were deposited by another atomic-layer-deposition process at 595 °C. The SiNx films worked well as barriers to both Si and O diffusion, resulting in a small decrease in the capacitance density even after post-annealing at temperatures up to 1000 °C, compared either to the HfO2 film deposited directly on Si or an Al2O3-barrier-layer/Si substrate. The decrease in the capacitance density after post-annealing, although relatively small, was due to Hf and O diffusion into the interface layer. Interestingly, post-annealing under an atmosphere containing small amount of oxygen (∼1%) decreased the capacitance density to a smaller degree. However, the interface and bulk capturing of the carrier was serious, resulting in a rather large hysteresis (∼100 mV) voltage in the capacitance–voltage measurements even after post-annealing.

HfO2 thin films were deposited on Si wafers using an atomic layer deposition technique at temperatures ranging from 200 to 400 °C with HfCl4 as the precursor and H2O as the oxidant. The time-dependent interfacial-layer growth behavior was dependent on the deposition temperature. The interfacial layer grew with increasing deposition time at 200 °C. However, the film thicknesses decreased with increasing deposition time after reaching a certain maximum value at 300 and 400 °C due to the enhanced dissolution of SiOx into the growing films at these temperatures. Post-annealing at 800 °C under a N2 atmosphere resulted in the precipitation of a Si-rich interfacial layer even for the initially interfacial layer free films. This had the effect of reducing the capacitance density of the films.