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Atomic-scale defect detection is shown in scanning tunneling microscopy images of single crystal WSe2 using an ensemble of U-Net-like convolutional neural networks. Standard deep learning test metrics indicated good detection performance with an average F1 score of 0.66 and demonstrated ensemble generalization to C-AFM images of WSe2 and STM images of MoSe2. Defect coordinates were automatically extracted from defect detections maps showing that STM image analysis enhanced by machine learning can be used to dramatically increase sample characterization throughput., Comment: 9 pages, 4 figures, submitted to MRS Advances as a conference preceding for the 2023 MRS Fall Meeting & Exhibit

The low-temperature phase diagram of a Bosonic system is predicted to contain an exotic quantum phase, called a supersolid, that is defined by broken translational symmetry and off-diagonal long-range order. This unique combination of properties enables a seemingly paradoxical scenario where a bosonic solid exhibits dissipationless mass flow. However, despite decades of extensive efforts, experimental realization of such a supersolid phase remains elusive. In this work we report experimental observation of a superfluid-to-insulating transition in the bosonic system of spatially indirect excitons in double layer graphene. Utilizing a variety of transport methods to characterize the superfluid-insulator phase boundary as a function of both density and temperature suggests the insulator to be a solid phase driven by repulsive dipole-dipole interactions in the dilute limit. The exciton solid exhibits a unique melting transition, with the high-temperature phase recovering a hallmark transport signature of off-diagonal long-range order, perfect Coulomb drag. The reentrant superfluid-like behaviour could indicate the low temperature solid also corresponds to a quantum coherent phase.

Previous gate-dependent conductance measurements of metallic carbon nanotubes have revealed unexplainable conductance suppressions, occurring at two different gate voltages. These were previously attributed to the gate-dependency of contact resistance. Our gate-dependent conductivity measurements on a metallic nanotube with known chirality show that these bimodal conductance suppressions are the manifestations of Wigner cusps, often seen in atomic and nuclear physics experiments., Comment: 6 pages, 3 figures

We visualized negative refraction of phonon polaritons, which occurs at the interface between two natural crystals. The polaritons - hybrids of infrared photons and lattice vibrations - form collimated rays that display negative refraction when passing through a planar interface between the two hyperbolic van der Waals materials: molybdenum oxide ($MoO_3$) and isotopically pure hexagonal boron nitride ($h^{11}BN$). At a special frequency $\omega_0$, these rays can circulate along closed diamond-shaped trajectories. We have shown that polariton eigenmodes display regions of both positive and negative dispersion interrupted by multiple gaps that result from polaritonic level repulsion and strong coupling.

Metals are canonical plasmonic media at infrared and optical wavelengths, allowing one to guide and manipulate light at the nano-scale. A special form of optical waveguiding is afforded by highly anisotropic crystals revealing the opposite signs of the dielectric functions along orthogonal directions. These media are classified as hyperbolic and include crystalline insulators, semiconductors and artificial metamaterials. Layered anisotropic metals are also anticipated to support hyperbolic waveguiding. Yet this behavior remains elusive, primarily because interband losses arrest the propagation of infrared modes. Here, we report on the observation of propagating hyperbolic waves in a prototypical layered nodal-line semimetal ZrSiSe. The observed waveguiding originates from polaritonic hybridization between near-infrared light and nodal-line plasmons. Unique nodal electronic structures simultaneously suppress interband loss and boost the plasmonic response, ultimately enabling the propagation of infrared modes through the bulk of the crystal.

We report the pressure (p_max = 1.5 GPa) evolution of the crystal structure of the Weyl semimetal T_d-MoTe_2 by means of neutron diffraction experiments. We find that the fundamental non-centrosymmetric structure T_d is fully suppressed and transforms into a centrosymmertic 1T' structure at a critical pressure of p_cr = 1.2 GPa. This is strong evidence for a pressure induced quantum phase transition (QPT) between topological to a trivial electronic state. Although the topological QPT has strong effect on magnetoresistance, it is interesting that the superconducting critical temperature T_c, the superfluid density, and the SC gap all change smoothly and continuously across p_cr and no sudden effects are seen concomitantly with the suppression of the T_d structure. This implies that the T_c, and thus the SC pairing strength, is unaffected by the topological QPT. However, the QPT requires the change in the SC gap symmetry from non-trivial s+- to a trivial s++ state, which we discuss in this work. Our systematic characterizations of the structure and superconducting properties associated with the topological QPT provide deep insight into the pressure induced phase diagram in this topological quantum material., Comment: 9 pages, 4 figures

Moir\'e superlattices in van der Waals (vdW) heterostructures have given rise to a number of emergent electronic phenomena due to the interplay between atomic structure and electron correlations. A lack of a simple way to characterize moir\'e superlattices has impeded progress in the field. In this work we outline a simple, room-temperature, ambient method to visualize real-space moir\'e superlattices with sub-5 nm spatial resolution in a variety of twisted vdW heterostructures including but not limited to conducting graphene, insulating boron nitride and semiconducting transition metal dichalcogenides. Our method utilizes piezoresponse force microscopy, an atomic force microscope modality which locally measures electromechanical surface deformation. We find that all moir\'e superlattices, regardless of whether the constituent layers have inversion symmetry, exhibit a mechanical response to out-of-plane electric fields. This response is closely tied to flexoelectricity wherein electric polarization and electromechanical response is induced through strain gradients present within moir\'e superlattices. Moir\'e superlattices of 2D materials thus represent an interlinked network of polarized domain walls in a non-polar background matrix., Comment: 21 pages, 4 figures; updated text

Dissipationless charge transport is one of the defining properties of superconductors (SC). The interplay between dimensionality and disorder in determining the onset of dissipation in SCs remains an open theoretical and experimental problem. In this work, we present measurements of the dissipation phase diagrams of SCs in the two dimensional (2D) limit, layer by layer, down to a monolayer in the presence of temperature (T), magnetic field (B), and current (I) in 2H-NbSe2. Our results show that the phase-diagram strongly depends on the SC thickness even in the 2D limit. At four layers we can define a finite region in the I-B phase diagram where dissipationless transport exists at T=0. At even smaller thicknesses, this region shrinks in area. In a monolayer, we find that the region of dissipationless transport shrinks towards a single point, defined by T=B=I=0. In applied field, we show that time-dependent-Ginzburg-Landau (TDGL) simulations that describe dissipation by vortex motion, qualitatively reproduce our experimental I-B phase diagram. Last, we show that by using non-local transport and TDGL calculations that we can engineer charge flow and create phase boundaries between dissipative and dissipationless transport regions in a single sample, demonstrating control over non-equilibrium states of matter., Comment: Manuscript, figures and supplemental information

Pairing interaction between fermionic particles leads to composite Bosons that condense at low temperature. Such condensate gives rise to long range order and phase coherence in superconductivity, superfluidity, and other exotic states of matter in the quantum limit. In graphene double-layers separated by an ultra-thin insulator, strong interlayer Coulomb interaction introduces electron-hole pairing across the two layers, resulting in a unique superfluid phase of interlayer excitons. In this work, we report a series of emergent fractional quantum Hall ground states in a graphene double-layer structure, which is compared to an expanded composite fermion model with two-component correlation. The ground state hierarchy from bulk conductance measurement and Hall resistance plateau from Coulomb drag measurement provide strong experimental evidence for a sequence of effective integer quantum Hall effect states for the novel two-component composite fermions (CFs), where CFs fill integer number of effective LLs (Lambda-level). Most remarkably, a sequence of incompressible states with interlayer correlation are observed at half-filled Lambda-levels, which represents a new type of order involving pairing states of CFs that is unique to graphene double-layer structure and beyond the conventional CF model., Comment: 6 pages, 3 figures. v2 added supplementary material

Spin orbit coupling (SOC) is the key to realizing time-reversal invariant topological phases of matter. Famously, SOC was predicted by Kane and Mele to stabilize a quantum spin Hall insulator; however, the weak intrinsic SOC in monolayer graphene has precluded experimental observation. Here, we exploit a layer-selective proximity effect---achieved via van der Waals contact to a semiconducting transition metal dichalcogenide--to engineer Kane-Mele SOC in ultra-clean \textit{bilayer} graphene. Using high-resolution capacitance measurements to probe the bulk electronic compressibility, we find that SOC leads to the formation of a distinct incompressible, gapped phase at charge neutrality. The experimental data agrees quantitatively with a simple theoretical model in which the new phase results from SOC-driven band inversion. In contrast to Kane-Mele SOC in monolayer graphene, the inverted phase is not expected to be a time reversal invariant topological insulator, despite being separated from conventional band insulators by electric field tuned phase transitions where crystal symmetry mandates that the bulk gap must close. Electrical transport measurements, conspicuously, reveal that the inverted phase has a conductivity $\sim e^2/h$, which is suppressed by exceptionally small in-plane magnetic fields. The high conductivity and anomalous magnetoresistance are consistent with theoretical models that predict helical edge states within the inversted phase, that are protected from backscattering by an emergent spin symmetry that remains robust even for large Rashba SOC. Our results pave the way for proximity engineering of strong topological insulators as well as correlated quantum phases in the strong spin-orbit regime in graphene heterostructures., Comment: 7 pages of main text + 13 pages supplementary material and figures. More information available at http://www.afylab.com/publications/

We report fabrication of graphene devices in a Corbino geometry consisting of concentric circular electrodes with no physical edge connecting the inner and outer electrodes. High device mobility is realized using boron nitride encapsulation together with a dual-graphite gate structure. Bulk conductance measurement in the quantum Hall effect (QHE) regime outperforms previously reported Hall bar measurements, with improved resolution observed for both the integer and fractional QHE states. We identify apparent phase transitions in the fractional sequence in both the lowest and first excited Landau levels (LLs) and observed features consistent with electron solid phases in higher LLs., Comment: 7 pages, 4 figures and 39 references

We developed THz-resonant scanning probe tips, yielding strongly enhanced and nanoscale confined THz near fields at their tip apex. The tips with length in the order of the THz wavelength ({\lambda} = 96.5 {\mu}m) were fabricated by focused ion beam (FIB) machining and attached to standard atomic force microscopy (AFM) cantilevers. Measurements of the near-field intensity at the very tip apex (25 nm radius) as a function of tip length, via graphene-based (thermoelectric) near-field detection, indicate their first and second order geometrical antenna resonances for tip length of 33 and 78 {\mu}m, respectively. On resonance, we find that the near-field intensity is enhanced by one order of magnitude compared to tips of 17 {\mu}m length (standard AFM tip length), which is corroborated by numerical simulations that further predict remarkable intensity enhancements of about 107 relative to the incident field. Because of the strong field enhancement and standard AFM operation of our tips, we envision manifold and straightforward future application in scattering-type THz near-field nanoscopy and THz photocurrent nanoimaging, nanoscale nonlinear THz imaging, or nanoscale control and manipulation of matter employing ultrastrong and ultrashort THz pulses., Comment: This document is the Accepted Manuscript version of a Published Work that appeared in Nano Letters. Copyright American Chemical Society after peer review and technical editing by the publisher. To access the final published work see: https://pubs.acs.org/doi/abs/10.1021/acs.nanolett.7b01924 The authors acknowledge support from the European Commission under theGrapheneCore1, grant no. 696656

Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods - chemical vapor transport and self-flux growth. Using a combination of scanning tunneling microscopy (STM) and scanning transmission electron microscopy (STEM), we show that the two major intrinsic defects in these materials are metal vacancies and chalcogen antisites. We show that by control of the synthetic conditions, we can reduce the defect concentration from above $10^{13} /cm^2$ to below $10^{11} /cm^2$. Because these point defects act as centers for non-radiative recombination of excitons, this improvement in material quality leads to a hundred-fold increase in the radiative recombination efficiency.

All non-interacting two-dimensional electronic systems are expected to exhibit an insulating ground state. This conspicuous absence of the metallic phase has been challenged only in the case of low-disorder, low density, semiconducting systems where strong interactions dominate the electronic state. Unexpectedly, over the last two decades, there have been multiple reports on the observation of a state with metallic characteristics on a variety of thin-film superconductors. To date, no theoretical explanation has been able to fully capture the existence of such a state for the large variety of superconductors exhibiting it. Here we show that for two very different thin-film superconductors, amorphous indium-oxide and a single-crystal of 2H-NbSe2, this metallic state can be eliminated by filtering external radiation. Our results show that these superconducting films are extremely sensitive to external perturbations leading to the suppression of superconductivity and the appearance of temperature independent, metallic like, transport at low temperatures. We relate the extreme sensitivity to the theoretical observation that, in two-dimensions, superconductivity is only marginally stable., Comment: 10 pages, 6 figures

Transition metal dichalcogenides (TMDs) are interesting for understanding fundamental physics of two-dimensional materials (2D) as well as for many emerging technologies, including spin electronics. Here, we report the discovery of long-range magnetic order below TM = 40 K and 100 K in bulk semiconducting TMDs 2H-MoTe2 and 2H-MoSe2, respectively, by means of muon spin-rotation (muSR), scanning tunneling microscopy (STM), as well as density functional theory (DFT) calculations. The muon spin rotation measurements show the presence of a large and homogeneous internal magnetic fields at low temperatures in both compounds indicative of long-range magnetic order. DFT calculations show that this magnetism is promoted by the presence of defects in the crystal. The STM measurements show that the vast majority of defects in these materials are metal vacancies and chalcogen-metal antisites which are randomly distributed in the lattice at the sub-percent level. DFT indicates that the antisite defects are magnetic with a magnetic moment in the range of 0.9-2.8 mu_B. Further, we find that the magnetic order stabilized in 2H-MoTe2 and 2H-MoSe2 is highly sensitive to hydrostatic pressure. These observations establish 2H-MoTe2 and 2H-MoSe2 as a new class of magnetic semiconductors and opens a path to studying the interplay of 2D physics and magnetism in these interesting semiconductors., Comment: 13 pages, 10 Figures

Since the invention of the bolometer, its main design principles relied on efficient light absorption into a low-heat-capacity material and its exceptional thermal isolation from the environment. While the reduced thermal coupling to its surroundings allows for an enhanced thermal response, it in turn strongly reduces the thermal time constant and dramatically lowers the detector's bandwidth. With its unique combination of a record small electronic heat capacity and a weak electron-phonon coupling, graphene has emerged as an extreme bolometric medium that allows for both, high sensitivity and high bandwidths. Here, we introduce a hot-electron bolometer based on a novel Johnson noise readout of the electron gas in graphene, which is critically coupled to incident radiation through a photonic nanocavity. This proof-of-concept operates in the telecom spectrum, achieves an enhanced bolometric response at charge neutrality with a noise equivalent power NEP < 5pW/ Sqrt(Hz), a thermal relaxation time of {\tau} < 34ps, an improved light absorption by a factor ~3, and an operation temperature up to T=300K.

The multi-component nature of bilayer graphene (BLG), together with the ability to controllably tune between the various ground state orders, makes it a rich system in which to explore interaction driven phenomena. In the fractional quantum Hall effect (FQHE) regime, the unique Landau level spectrum of BLG is anticipated to support a non-Abelian even-denominator state that is tunable by both electric and magnetic fields. However, observation of this state, which is anticipated to be stronger than in conventional systems, has been conspicuously difficult. Here we report transport measurements of a robust even denominator FQHE in high-mobility, dual gated BLG devices. We confirm that the stability of the energy gap can be sensitively tuned and map the phase diagram. Our results establish BLG as a dynamic new platform to study topological ground states with possible non-Abelian excitations., Comment: 6 pages, 4 figures. v2, a typo has been corrected

MoTe$_2$ is an exfoliable transition metal dichalcogenide (TMD) which crystallizes in three symmetries, the semiconducting trigonal-prismatic $2H-$phase, the semimetallic $1T^{\prime}$ monoclinic phase, and the semimetallic orthorhombic $T_d$ structure. The $2H-$phase displays a band gap of $\sim 1$ eV making it appealing for flexible and transparent optoelectronics. The $T_d-$phase is predicted to possess unique topological properties which might lead to topologically protected non-dissipative transport channels. Recently, it was argued that it is possible to locally induce phase-transformations in TMDs, through chemical doping, local heating, or electric-field to achieve ohmic contacts or to induce useful functionalities such as electronic phase-change memory elements. The combination of semiconducting and topological elements based upon the same compound, might produce a new generation of high performance, low dissipation optoelectronic elements. Here, we show that it is possible to engineer the phases of MoTe$_2$ through W substitution by unveiling the phase-diagram of the Mo$_{1-x}$W$_x$Te$_2$ solid solution which displays a semiconducting to semimetallic transition as a function of $x$. We find that only $\sim 8$ \% of W stabilizes the $T_d-$phase at room temperature. Photoemission spectroscopy, indicates that this phase possesses a Fermi surface akin to that of WTe$_2$., Comment: 10 paged, 5 pages, supplementary information not included

Spatially indirect excitons can be created when an electron and a hole, confined to separate layers of a double quantum well system, bind to form a composite Boson. Because there is no recombination pathway such excitons are long lived making them accessible to transport studies. Moreover, the ability to independently tune both the intralayer charge density and interlayer electron-hole separation provides the capability to reach the low-density, strongly interacting regime where a BEC-like phase transition into a superfluid ground state is anticipated. To date, transport signatures of the superfluid condensate phase have been seen only in quantum Hall bilayers composed of double well GaAs heterostructures. Here we report observation of the exciton condensate in the quantum Hall effect regime of double layer structures of bilayer graphene. Correlation between the layers is identified by quantized Hall drag appearing at matched layer densities, and the dissipationless nature of the phase is confirmed in the counterflow geometry. Independent tuning of the layer densities and interlayer bias reveals a selection rule involving both the orbital and valley quantum number between the symmetry-broken states of bilayer graphene and the condensate phase, while tuning the layer imbalance stabilizes the condensate to temperatures in excess of 4K. Our results establish bilayer graphene quantum wells as an ideal system in which to study the rich phase diagram of strongly interacting Bosonic particles in the solid state., Comment: 7 pages, 4 figures. Main text and figures are updated

Two-dimensional transition metal dichalcogenides (TMDC) have shown promise for various applications in optoelectronics and so-called valleytronics. Their operation and performance strongly depend on the stacking of individual layers. Here, optical second-harmonic generation (SHG) in imaging mode is shown to be a versatile tool for systematic time-resolved investigations of TMDC monolayers and heterostructures in consideration of the material's structure. Large sample areas can be probed without the need of any mapping or scanning. By means of polarization dependent measurements, the crystalline orientation of monolayers or the stacking angles of heterostructures can be evaluated for the whole field of view. Pump-probe experiments then allow to correlate observed transient changes of the second-harmonic response with the underlying structure. The corresponding time-resolution is virtually limited by the pulse duration of the used laser. As an example, polarization dependent and time-resolved measurements on mono- and multilayer MoS$_2$ flakes grown on a SiO$_2$/Si(001) substrate are presented.

Strongly interacting two dimensional electron systems (2DESs) host a complex landscape of broken symmetry states. The possible ground states are further expanded by internal degrees of freedom such as spin or valley-isospin. While direct probes of spin in 2DESs were demonstrated two decades ago, the valley quantum number has only been probed indirectly in semiconductor quantum wells, graphene mono- and bilayers, and transition-metal dichalcogenides. Here, we present the first direct experimental measurement of valley polarization in a two dimensional electron system, effected via the direct mapping of the valley quantum number onto the layer polarization in bilayer graphene at high magnetic fields. We find that the layer polarization evolves in discrete steps across 32 electric field-tuned phase transitions between states of different valley, spin, and orbital polarization. Our data can be fit by a model that captures both single particle and interaction induced orbital, valley, and spin anisotropies, providing the most complete model of this complex system to date. Among the newly discovered phases are theoretically unanticipated orbitally polarized states stabilized by skew interlayer hopping. The resulting roadmap to symmetry breaking in bilayer graphene paves the way for deterministic engineering of fractional quantum Hall states, while our layer-resolved technique is readily extendable to other two dimensional materials where layer polarization maps to the valley or spin quantum numbers, providing an essential direct probe that is a prerequisite for manipulating these new quantum degrees of freedom., Comment: This version (v3) updates a large portion of the theoretical treatment in previous versions and consequently has new Figs. 3 and 4 of the main text and a significant overhaul of the Supplementary Material

Coulomb drag between parallel quantum wells provides a uniquely sensitive measurement of electron correlations since the drag response depends on interactions only. Recently it has been demonstrated that a new regime of strong interactions can be accessed for devices consisting of two monlolayer graphene (MLG) crystals, separated by few layer hexagonal boron-nitride. Here we report measurement of Coulomb drag in a double bilayer graphene (BLG) stucture, where the interaction potential is anticipated to be yet further enhanced compared to MLG. At low temperatures and intermediate densities a new drag response with inverse sign is observed, distinct from the momentum and energy drag mechanisms previously reported in double MLG. We demonstrate that by varying the device aspect ratio the negative drag component can be suppressed and a response showing excellent agreement with the density and temperature dependance predicted for momentum drag in double BLG is found. Our results pave the way for pursuit of emergent phases in strongly interacting bilayers, such as the exciton condensate.

We have measured the scattering strength of charged impurities on a semiconducting single-walled carbon nanotube with known chirality. The resistivity of the nanotube is measured as a function of the density of adsorbed potassium atoms, enabling the determination of the resistance added by an individual potassium atom. Holes are scattered 37 times more efficiently than electrons by an adsorbed potassium atom. The determined scattering strength is used to reveal the spatial extent and depth of the scattering potential for potassium, a model Coulomb adsorbate. Our result represents an essential experimental input to understand adsorbate-induced scattering and provides a crucial step for paving the way to rational design of nanotube-based sensors.

Two-dimensional (2D) materials are not expected to be metals at low temperature due to electron localization. Consistent with this, pioneering studies on thin films reported only superconducting and insulating ground states, with a direct transition between the two as a function of disorder or magnetic field. However, more recent works have revealed the presence of an intermediate metallic state occupying a substantial region of the phase diagram whose nature is intensely debated. Here, we observe such a state in the disorder-free limit of a crystalline 2D superconductor, produced by mechanical co-lamination of NbSe$_2$ in inert atmosphere. Under a small perpendicular magnetic field, we induce a transition from superconductor to the intermediate metallic state. We find a new power law scaling with field in this phase, which is consistent with the Bose metal model where metallic behavior arises from strong phase fluctuations caused by the magnetic field., Comment: 9 pages: 6 pages main text, 3 pages supplementary figures

Electrons incident from a normal metal onto a superconductor are reflected back as holes - a process called Andreev reflection. In a normal metal where the Fermi energy is much larger than a typical superconducting gap, the reflected hole retraces the path taken by the incident electron. In graphene with ultra low disorder, however, the Fermi energy can be tuned to be smaller than the superconducting gap. In this unusual limit, the holes are expected to be reflected specularly at the superconductor-graphene interface due to the onset of interband Andreev processes, where the effective mass of the reflected holes change sign. Here we present measurements of gate modulated Andreev reflections across the low disorder van der Waals interface formed between graphene and the superconducting NbSe2. We find that the conductance across the graphene-superconductor interface exhibits a characteristic suppression when the Fermi energy is tuned to values smaller than the superconducting gap, a hallmark for the transition between intraband retro- and interband specular- Andreev reflections.

The layered transition metal dichalcogenides host a rich collection of charge density wave (CDW) phases in which both the conduction electrons and the atomic structure display translational symmetry breaking. Manipulating these complex states by purely electronic methods has been a long-sought scientific and technological goal. Here, we show how this can be achieved in 1T-TaS2 in the two-dimensional (2D) limit. We first demonstrate that the intrinsic properties of atomically-thin flakes are preserved by encapsulation with hexagonal boron nitride in inert atmosphere. We use this facile assembly method together with TEM and transport measurements to probe the nature of the 2D state and show that its conductance is dominated by discommensurations. The discommensuration structure can be precisely tuned in few-layer samples by an in-plane electric current, allowing continuous electrical control over the discommensuration-melting transition in 2D.

We examine the time-resolved resonance energy transfer of excitons from single n-butyl amine-bound, chloride-terminated nanocrystals to two-dimensional graphene through time-correlated single photon counting. The radiative biexponential lifetime kinetics and blinking statistics of the individual surface-modified nanocrystal elucidate the non-radiative decay channels. Blinking modification as well as a 4 times reduction in spontaneous emission were observed with the short chloride and n-butylamine ligands, probing the energy transfer pathways for the development of graphene-nanocrystal nanophotonic devices.

We have fabricated and tested mechanical resonators consisting of a single-atomic-layer of graphene deposited on suspended silicon nitride membranes. With the addition of the graphene layer we retain the desirable mechanical properties of silicon nitride but utilize the electrical and optical properties of graphene to transduce resonant motion by both optical and electrical means. By positioning the graphene-on-silicon-nitride drums in a tunable optical cavity we observe position dependent damping and resonant frequency control of the devices due to optical absorption by graphene.

Electrons moving through a spatially periodic lattice potential develop a quantized energy spectrum consisting of discrete Bloch bands. In two dimensions, electrons moving through a magnetic field also develop a quantized energy spectrum, consisting of highly degenerate Landau energy levels. In 1976 Douglas Hofstadter theoretically considered the intersection of these two problems and discovered that 2D electrons subjected to both a magnetic field and a periodic electrostatic potential exhibit a self-similar recursive energy spectrum. Known as Hofstadter's butterfly, this complex spectrum results from a delicate interplay between the characteristic lengths associated with the two quantizing fields, and represents one of the first quantum fractals discovered in physics. In the decades since, experimental attempts to study this effect have been limited by difficulties in reconciling the two length scales. Typical crystalline systems (<1 nm periodicity) require impossibly large magnetic fields to reach the commensurability condition, while in artificially engineered structures (>100 nm), the corresponding fields are too small to completely overcome disorder. Here we demonstrate that moire superlattices arising in bilayer graphene coupled to hexagonal boron nitride provide a nearly ideal-sized periodic modulation, enabling unprecedented experimental access to the fractal spectrum. We confirm that quantum Hall effect features associated with the fractal gaps are described by two integer topological quantum numbers, and report evidence of their recursive structure. Observation of Hofstadter's spectrum in graphene provides the further opportunity to investigate emergent behaviour within a fractal energy landscape in a system with tunable internal degrees of freedom., Comment: 10 pages, includes supplementary information

High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax values as high as 34 GHz at 600-nm channel length. Bias dependence of fT and fmax and the effect of the ambipolar channel on transconductance and output resistance are also examined., Comment: IEDM 2011

Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current saturation down to 500 nm channel lengths with intrinsic transconductance values above 400 mS/mm. The work demonstrates the favorable properties of using h-BN as a gate dielectric for graphene FETs., Comment: 4 pages, 8 figures

We report observation of the fractional quantum Hall effect (FQHE) in high mobility multi-terminal graphene devices, fabricated on a single crystal boron nitride substrate. We observe an unexpected hierarchy in the emergent FQHE states that may be explained by strongly interacting composite Fermions with full SU(4) symmetric underlying degrees of freedom. The FQHE gaps are measured from temperature dependent transport to be up 10 times larger than in any other semiconductor system. The remarkable strength and unusual hierarcy of the FQHE described here provides a unique opportunity to probe correlated behavior in the presence of expanded quantum degrees of freedom., Comment: 5 pages, 3 figures

Graphene devices on standard SiO2 substrates are highly disordered, exhibiting characteristics far inferior to the expected intrinsic properties of graphene[1-12]. While suspending graphene above the substrate yields substantial improvement in device quality[13,14], this geometry imposes severe limitations on device architecture and functionality. Realization of suspended-like sample quality in a substrate supported geometry is essential to the future progress of graphene technology. In this Letter, we report the fabrication and characterization of high quality exfoliated mono- and bilayer graphene (MLG and BLG) devices on single crystal hexagonal boron nitride (h-BN) substrates, by a mechanical transfer process. Variable-temperature magnetotransport measurements demonstrate that graphene devices on h-BN exhibit enhanced mobility, reduced carrier inhomogeneity, and reduced intrinsic doping in comparison with SiO2-supported devices. The ability to assemble crystalline layered materials in a controlled way sets the stage for new advancements in graphene electronics and enables realization of more complex graphene heterostructres., Comment: 20 pages (includes supplementary info), 7 figures

We report on a capacitance study of dual gated bilayer graphene. The measured capacitance allows us to probe the electronic compressibility as a function of carrier density, temperature, and applied perpendicular electrical displacement D. As a band gap is induced with increasing D, the compressibility minimum at charge neutrality becomes deeper but remains finite, suggesting the presence of localized states within the energy gap. Temperature dependent capacitance measurements show that compressibility is sensitive to the intrinsic band gap. For large displacements, an additional peak appears in the compressibility as a function of density, corresponding to the presence of a 1-dimensional van Hove singularity (vHs) at the band edge arising from the quartic bilayer graphene band structure. For D > 0, the additional peak is observed only for electrons, while D < 0 the peak appears only for holes. This asymmetry that can be understood in terms of the finite interlayer separation and may be useful as a direct probe of the layer polarization.

The resistivity of ultra-clean suspended graphene is strongly temperature dependent for 5K0.5*10^11 cm^-2, the resistivity increases with increasing T and is linear above 50K, suggesting carrier scattering from acoustic phonons. At T=240K the mobility is ~120,000 cm^2/Vs, higher than in any known semiconductor. At the charge neutral point we observe a non-universal conductivity that decreases with decreasing T, consistent with a density inhomogeneity <10^8 cm^-2.

We have achieved mobilities in excess of 200,000 cm^2/Vs at electron densities of ~2*10^11 cm^-2 by suspending single layer graphene. Suspension ~150 nm above a Si/SiO_2 gate electrode and electrical contacts to the graphene was achieved by a combination of electron beam lithography and etching. The specimens were cleaned in situ by employing current-induced heating, directly resulting in a significant improvement of electrical transport. Concomitant with large mobility enhancement, the widths of the characteristic Dirac peaks are reduced by a factor of 10 compared to traditional, non-suspended devices. This advance should allow for accessing the intrinsic transport properties of graphene., Comment: 4 pages, 3 figures, references updated

We report the existence of broad and weakly asymmetric features in the high-energy (G) Raman modes of freely suspended metallic carbon nanotubes of defined chiral index. A significant variation in peak width (from 12 cm-1 to 110 cm-1) is observed as a function of the nanotube's chiral structure. When the nanotubes are electrostatically gated, the peak widths decrease. The broadness of the Raman features is understood as the consequence of coupling of the phonon to electron-hole pairs, the strength of which varies with the nanotube chiral index and the position of the Fermi energy., Comment: 13 pages; submitted to Phys. Rev. Lett

We describe a technique for fabricating nanometer-scale gaps in Pt wires on insulating substrates, using individual single-walled carbon nanotubes as shadow masks during metal deposition. More than 80% of the devices display current-voltage dependencies characteristic of direct electron tunneling. Fits to the current-voltage data yield gap widths in the 0.8-2.3 nm range for these devices, dimensions that are well suited for single-molecule transport measurements.

The thermal conductivity, k(T), of bulk single-wall carbon nanotubes (SWNT's) displays a linear temperature dependence at low T that has been attributed to 1D quantization of phonons. To explore this issue further, we have measured the k(T) of samples with varying average tube diameters. We observe linear k(T) up to higher temperatures in samples with smaller diameters, in agreement with a quantization picture. In addition, we have examined the effect of annealing on k(T). We observe an enhancement in k(T) for annealed samples which we attribute to healing of defects and removal of impurities. These measurements demonstrate how the thermal properties of an SWNT material can be controlled by manipulating its intrinsic nanoscale properties., Comment: Proc. of the XV. Int. Winterschool on Electronic Properties of Novel Materials, Kirchberg/Tirol, Austria, 2001

The electronic spectra of carbon nanotubes and other nanoscale systems are quantized because of their small radii. Similar quantization in the phonon spectra has been difficult to observe because of the far smaller energy scale. We probed this regime by measuring the temperature-dependent specific heat of purified single-wall nanotubes. Thee data show direct evidence of one-dimensional quanitized phonon subbands. Above 4 K, they are in excellent agreement with model calculations of individual nanotubes and differ markedly from the specific heat of two-dimensional graphene or three-dimensional graphite. Detailed modeling yields an energy of 4.3 meV for the lowest quantized phonon subband and a tube-tube (or "lattice") Debye energy of 1.1 meV, implying a small intertube coupling in bundles., Comment: 12 pages, pdf file