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Your search keyword '"Holloway, P.H."' showing total 154 results
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154 results on '"Holloway, P.H."'

3. Rhenium ohmic contacts on 6H-SiC

Author

McDaniel, G.Y., Fenstermarker, S.T., Lampert, W.V., and Holloway, P.H.

Subjects
Hydrogen -- Electric properties, Rhenium -- Electric properties, Silicon carbide -- Electric properties, Physics
Abstract

The formation of ohmic contacts by Re on 6H-SiC moderately doped with nitrogen (1.28 X 10(super 18) cm(super -3)) are demonstrated on silicon-rich and stoichiometric substrate surfaces after annealing to 1000 degree Celsius for 120 min in vacuum. The Re oxidation rate is accelerated with increased film roughness and is shown to be faster on samples with greater initial carbon concentrations.

Published
2004

5. Improved electroluminescence of ZnS:Mn thin films by codoping with potassium chloride

Author

Waldrip, K.E., Lewis, J.S., Zhai, Q., Puga-Lambers, M., Davidson, M.R., Holloway, P.H., and Sun, S.-S.

Subjects
Electroluminescent display systems -- Research, Thin films -- Research, Physics
Abstract

The fabrication of alternating current thin film electroluminescent devices using sputter-deposited ZnSn:Mn is described.

Published
2001

7. Solid phase epitaxial growth of n-GaAs with Ti-Ge-Ni metallization for ohmic contacts

Author

Kim, T.-J., Krishnamoothy, V., Puga-Lambers, M., and Holloway, P.H.

Subjects
Gallium arsenide -- Research, Epitaxy -- Research, Titanium -- Research, Germanium -- Research, Nickel -- Research, Thin films -- Research, Physics
Abstract

A study was conducted to examine the association between solid-phase interfacial reactions and the development of ohmic contacts by evaporating thin films of nickel, germanium and titanium onto n-gallium arsenide. 30 nm of germanium and 25 nm of titanium films were deposited and vacuum annealed at 500 degrees C. Experimental results indicated that the regrowth of doped gallium arsenide supported the formation of the ohmic contact.

Published
1999

8. The influence of residual gas pressures on the degradation of ZnS powder phosphors

Author

Swart, H.C., Trottier, T.A., Sebastian, J.S., Jones, S.L., and Holloway, P.H.

Subjects
Phosphors -- Research, Ion bombardment -- Research, Cathodoluminescence -- Research, Electron beams -- Usage, Physics
Abstract

Research was conducted to show that the residual gases in a field-emission display (FED) device are essential to the performance and lifetime of ZnS phosphor screens. Auger electron spectroscopy combined with cathodoluminescence (CL) were used to monitor the surface reactions and degraded luminescence intensity caused by electron bombardment at different residual gas pressures and gas compositions. Results indicate that electron-stimulated surface chemical reactions on ZnS cause the degradation of the FED phosphor and subsequent loss of CL intensity.

Published
1998

9. Microstructure and atomic effects on the electroluminescent efficiency of SrS:Ce thin film devices

Author

Warren, W.L., Seager, C.H., Sun, S.-S., Naman, A., Holloway, P.H., Jones, K.S., and Soininen, E.

Subjects
Microstructure -- Research, Electroluminescence -- Research, Thin films -- Electric properties, Crystals -- Structure, Physics
Abstract

X-ray diffraction and transmission electron microscopy studies reveal that grain size may be improved and crystalline defects minimized through the rapid thermal anneals of SrS:Ce thin films. Results were verified through comparison with electron paramagnetic resonance studies indicating that anneals reduce crystal field environment variance. Results also suggest that association with of Vsr shift with Ce3+ sites will enhance electroluminescence wavelengths as activator site symmetry is reduced.

Published
1997

20. Improved brightness and efficiency in Ce codoped ZnS:TbOF electroluminescent thin films

Author

Kim, J.P., Davidson, M.R., and Holloway, P.H.

Subjects
Dielectric films -- Research, Dielectric films -- Electric properties, Dielectric films -- Optical properties, Thin films -- Research, Thin films -- Electric properties, Thin films -- Optical properties, Zinc sulfate -- Research, Zinc sulfate -- Optical properties, Zinc sulfate -- Electric properties, Cerium -- Research, Cerium -- Optical properties, Cerium -- Electric properties, Physics
Abstract

The optical and electrical properties of Ce codoped ZnS:TbOF thin films are studied to evaluate the mechanism for the brightness increase. The brightness improvement by Ce codoping is attributed to both increased radiative efficiency and improved excitation efficiency.

Published
2003

21. Reduction of intensity from coatings on cathodoluminescent phosphors: MgO or Al2O3 on Y2O3: Eu or Y2SiO5: Tb

Author

Thomes, W.J., Seager, C.H., and Holloway, P.H.

Subjects
Electron beams -- Research, Phosphors -- Properties, Phosphors -- Research, Cathodoluminescence -- Research, Physics
Abstract

A study was conducted to examine the cathodoluminescence (CL) intensity and spectral distribution effects when coatings of Al2O3 or MgO were deposited on Y2O3:Eu and Y2SiO3:Tb phosphors. The result shows that thicker coatings attenuated the CL intensity, from the phosphors under electron beam bombardment, are stronger than thinner coatings.

Published
2002

25. High-Power GaN Electronic Devices

Author

Zhang, A.P., primary, Ren, F., additional, Anderson, T.J., additional, Abernathy, C.R., additional, Singh, R.K., additional, Holloway, P.H., additional, Pearton, S.J., additional, Palmer, D., additional, and McGuire, G.E., additional

Published
2002
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